JP2010244062A5 - - Google Patents

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Publication number
JP2010244062A5
JP2010244062A5 JP2010123583A JP2010123583A JP2010244062A5 JP 2010244062 A5 JP2010244062 A5 JP 2010244062A5 JP 2010123583 A JP2010123583 A JP 2010123583A JP 2010123583 A JP2010123583 A JP 2010123583A JP 2010244062 A5 JP2010244062 A5 JP 2010244062A5
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Prior art keywords
repeating unit
acid
decomposable group
resin
decomposable
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JP2010123583A
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Japanese (ja)
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JP5277203B2 (en
JP2010244062A (en
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Priority claimed from JP2010123583A external-priority patent/JP5277203B2/en
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Publication of JP2010244062A5 publication Critical patent/JP2010244062A5/ja
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Claims (7)

酸の作用によりアルカリ現像液であるポジ型現像液に対する溶解度が増大し、有機溶剤を含有するネガ型現像液に対する溶解度が減少する樹脂を含有し、活性光線又は放射線の照射により、前記ポジ型現像液に対する溶解度が増大し、前記ネガ型現像液に対する溶解度が減少するレジスト膜を形成する樹脂組成物を、基板上に塗布することで、レジスト膜を形成し、
前記レジスト膜をＥＵＶ光により露光し、
露光後のレジスト膜を、前記有機溶剤を含有するネガ型現像液を用いて現像することを含むパターン形成方法。 It contains a resin whose solubility in a positive developer, which is an alkaline developer, increases due to the action of an acid , and which decreases in solubility in a negative developer containing an organic solvent. By applying a resin composition that forms a resist film that increases the solubility in the liquid and decreases the solubility in the negative developer to form a resist film,
Exposing the resist film with EUV light ;
The pattern formation method including developing the resist film after exposure using the negative developing solution containing the said organic solvent. 前記樹脂が、ヒドロキシスチレン系繰り返し単位及び酸分解基を有する繰り返し単位を有する樹脂である、請求項１に記載のパターン形成方法。The pattern formation method according to claim 1, wherein the resin is a resin having a hydroxystyrene-based repeating unit and a repeating unit having an acid-decomposable group. 前記樹脂における酸分解基を有する繰り返し単位が、酸脱離性基で保護されたヒドロキシスチレン系繰り返し単位、又は酸分解性（メタ）アクリル酸３級アルキルエステル系繰り返し単位である、請求項２に記載のパターン形成方法。The repeating unit having an acid-decomposable group in the resin is a hydroxystyrene-based repeating unit protected with an acid-eliminable group or an acid-decomposable (meth) acrylic acid tertiary alkyl ester-based repeating unit. The pattern formation method as described. 前記酸分解基を有する繰り返し単位が、酸脱離性基で保護されたヒドロキシスチレン系繰り返し単位である、請求項３に記載のパターン形成方法。The pattern formation method according to claim 3, wherein the repeating unit having an acid-decomposable group is a hydroxystyrene-based repeating unit protected with an acid-eliminable group. 前記酸分解基を有する繰り返し単位が、１−アルコキシエトキシスチレン由来の繰り返し単位である、請求項４に記載のパターン形成方法。The pattern forming method according to claim 4, wherein the repeating unit having an acid-decomposable group is a repeating unit derived from 1-alkoxyethoxystyrene. 前記酸分解基を有する繰り返し単位が、酸分解性（メタ）アクリル酸３級アルキルエステル系繰り返し単位である、請求項３に記載のパターン形成方法。The pattern forming method according to claim 3, wherein the repeating unit having an acid-decomposable group is an acid-decomposable (meth) acrylic acid tertiary alkyl ester-based repeating unit. 前記酸分解基を有する繰り返し単位が、２−アルキル−２−アダマンチル（メタ）アクリレート由来の繰り返し単位である、請求項６に記載のパターン形成方法。The pattern forming method according to claim 6, wherein the repeating unit having an acid-decomposable group is a repeating unit derived from 2-alkyl-2-adamantyl (meth) acrylate.
JP2010123583A 2006-12-25 2010-05-28 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS Active JP5277203B2 (en)

Priority Applications (1)

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JP2010123583A JP5277203B2 (en) 2006-12-25 2010-05-28 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2006347560 2006-12-25
JP2006347560 2006-12-25
JP2007103901 2007-04-11
JP2007103901 2007-04-11
JP2007117158 2007-04-26
JP2007117158 2007-04-26
JP2010123583A JP5277203B2 (en) 2006-12-25 2010-05-28 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS

Related Parent Applications (1)

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JP2007325915A Division JP4554665B2 (en) 2006-12-25 2007-12-18 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD

Related Child Applications (2)

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JP2012243033A Division JP5531078B2 (en) 2006-12-25 2012-11-02 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS
JP2013032157A Division JP2013117739A (en) 2006-12-25 2013-02-21 Pattern forming method, positive resist composition for multiple development used in the pattern forming method, developing solution for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method

Publications (3)

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JP2010244062A JP2010244062A (en) 2010-10-28
JP2010244062A5 true JP2010244062A5 (en) 2011-11-17
JP5277203B2 JP5277203B2 (en) 2013-08-28

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JP2010123583A Active JP5277203B2 (en) 2006-12-25 2010-05-28 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS
JP2010123584A Active JP5186532B2 (en) 2006-12-25 2010-05-28 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS
JP2012243033A Active JP5531078B2 (en) 2006-12-25 2012-11-02 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS
JP2013032157A Pending JP2013117739A (en) 2006-12-25 2013-02-21 Pattern forming method, positive resist composition for multiple development used in the pattern forming method, developing solution for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP2014240467A Active JP5965971B2 (en) 2006-12-25 2014-11-27 Pattern formation method
JP2016120588A Active JP6322668B2 (en) 2006-12-25 2016-06-17 Pattern forming method and electronic device manufacturing method

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JP2010123584A Active JP5186532B2 (en) 2006-12-25 2010-05-28 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS
JP2012243033A Active JP5531078B2 (en) 2006-12-25 2012-11-02 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINS
JP2013032157A Pending JP2013117739A (en) 2006-12-25 2013-02-21 Pattern forming method, positive resist composition for multiple development used in the pattern forming method, developing solution for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP2014240467A Active JP5965971B2 (en) 2006-12-25 2014-11-27 Pattern formation method
JP2016120588A Active JP6322668B2 (en) 2006-12-25 2016-06-17 Pattern forming method and electronic device manufacturing method

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JP5719788B2 (en) * 2012-02-24 2015-05-20 富士フイルム株式会社 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for producing electronic device using them, and electronic device
JP6007155B2 (en) * 2013-07-30 2016-10-12 東京エレクトロン株式会社 Development processing method, program, computer storage medium, and development processing apparatus
JP2015045836A (en) * 2013-08-02 2015-03-12 富士フイルム株式会社 Pattern forming method and surface treatment agent used for the same, method for manufacturing electronic device, and electronic device
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