JP2004004227A5 - - Google Patents

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Publication number
JP2004004227A5
JP2004004227A5 JP2002158822A JP2002158822A JP2004004227A5 JP 2004004227 A5 JP2004004227 A5 JP 2004004227A5 JP 2002158822 A JP2002158822 A JP 2002158822A JP 2002158822 A JP2002158822 A JP 2002158822A JP 2004004227 A5 JP2004004227 A5 JP 2004004227A5
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JP
Japan
Prior art keywords
group
hydrogen atom
general formula
atom
acid
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JP2002158822A
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Japanese (ja)
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JP2004004227A (en
JP4018454B2 (en
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Publication date
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Priority claimed from JP2002158822A external-priority patent/JP4018454B2/en
Priority to JP2002158822A priority Critical patent/JP4018454B2/en
Priority to KR1020030034881A priority patent/KR100955454B1/en
Priority to US10/448,041 priority patent/US6939662B2/en
Priority to EP10188668A priority patent/EP2278400A3/en
Priority to EP10188665A priority patent/EP2278397A3/en
Priority to EP10188667.9A priority patent/EP2278399B1/en
Priority to AT03012142T priority patent/ATE525676T1/en
Priority to EP03012142A priority patent/EP1367440B1/en
Priority to EP10188666A priority patent/EP2278398A3/en
Publication of JP2004004227A publication Critical patent/JP2004004227A/en
Publication of JP2004004227A5 publication Critical patent/JP2004004227A5/ja
Publication of JP4018454B2 publication Critical patent/JP4018454B2/en
Application granted granted Critical
Priority to KR1020090108795A priority patent/KR100947853B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (4)

（Ａ）下記一般式（Ｉ）で表される繰り返し単位と、下記一般式（ＩＩ）〜（ＩＶ）で表される繰り返し単位の群から選ばれる繰り返し単位の少なくとも１種とを有する、酸の作用によりアルカリ現像液への溶解性が増大する樹脂及び
（Ｂ）活性光線又は放射線の照射により、酸を発生する化合物
を含有することを特徴とするポジ型レジスト組成物。
Figure 2004004227
 一般式（Ｉ）中、
Ｒａ、Ｒｂ及びＲｃは、各々独立に、水素原子、フッ素原子又はフルオロアルキル基を表す。
Ｌ1は、単結合又は２価の連結基を表す。
Ｒ1〜Ｒ6は、各々独立に、水素原子、フッ素原子又はフルオロアルキル基を表す。但し、Ｒ1〜Ｒ6は、少なくとも１つは水素原子ではない。
Ｘは、水素原子又は酸の作用により分解する基を表す。
ｎは、０又は１を表す。
Ｑは、水素原子又は水酸基を表す。
Figure 2004004227
 一般式（ＩＩ）中、
Ｒ11〜Ｒ16は、各々独立に、水素原子、フッ素原子又はフルオロアルキル基を表す。但し、Ｒ11〜Ｒ16は、少なくとも１つは水素原子ではない。
Ｘ1は、水素原子又は酸の作用により分解する基を表す。
ｍは、０又は１を表す。
Figure 2004004227
 一般式（ＩＩＩ）中、
Ｒ3aは、水素原子又は酸の作用により分解する基を表す。
ｍは、０又は１を表す。
Figure 2004004227
 一般式（ＩＶ）中、
Ｒ1aは、水素原子、フッ素原子、塩素原子、臭素原子、シアノ基又はトリフルオロメチル基を表す。
Ｒ41〜Ｒ46は、各々独立に、水素原子、フッ素原子又はフルオロアルキル基を表す。但し、Ｒ41〜Ｒ46は、少なくとも１つは水素原子ではない。
Ｘ2は、水素原子又は酸の作用により分解する基を表す。
ｎは、１〜５の整数を示す。ｎが２以上である場合に、２つ以上あるＲ41〜Ｒ46及びＸ2は、同じでも異なっていてもよい。(A) an acid having a repeating unit represented by the following general formula (I) and at least one repeating unit selected from the group of repeating units represented by the following general formulas (II) to (IV): A positive resist composition comprising: a resin whose solubility in an alkaline developer is increased by an action; and (B) a compound that generates an acid upon irradiation with actinic rays or radiation.
Figure 2004004227
 In general formula (I),
Ra, Rb and Rc each independently represents a hydrogen atom, a fluorine atom or a fluoroalkyl group.
L 1 represents a single bond or a divalent linking group.
R 1 to R 6 each independently represents a hydrogen atom, a fluorine atom or a fluoroalkyl group. However, at least one of R 1 to R 6 is not a hydrogen atom.
X represents a hydrogen atom or a group capable of decomposing by the action of an acid.
n represents 0 or 1.
Q represents a hydrogen atom or a hydroxyl group.
Figure 2004004227
 In general formula (II),
R 11 to R 16 each independently represents a hydrogen atom, a fluorine atom or a fluoroalkyl group. However, at least one of R 11 to R 16 is not a hydrogen atom.
X 1 represents a hydrogen atom or a group that decomposes by the action of an acid.
m represents 0 or 1.
Figure 2004004227
 In general formula (III),
R 3a represents a hydrogen atom or a group that decomposes by the action of an acid.
m represents 0 or 1.
Figure 2004004227
 In general formula (IV),
R 1a represents a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, a cyano group or a trifluoromethyl group.
R 41 to R 46 each independently represents a hydrogen atom, a fluorine atom or a fluoroalkyl group. However, at least one of R 41 to R 46 is not a hydrogen atom.
X 2 represents a hydrogen atom or a group that decomposes by the action of an acid.
n shows the integer of 1-5. When n is 2 or more, two or more R 41 to R 46 and X 2 may be the same or different. 一般式（Ｉ）中のＲｃが、フッ素原子又はトリフルオロメチル基であることを特徴とする請求項１に記載のポジ型レジスト組成物。  2. The positive resist composition according to claim 1, wherein Rc in the general formula (I) is a fluorine atom or a trifluoromethyl group. 一般式（Ｉ）中のＬ1が、カルボニル基、エチレン基又は単結合であることを特徴とする請求項１又は２に記載のポジ型レジスト組成物。The positive resist composition according to claim 1 or 2, wherein L 1 in the general formula (I) is a carbonyl group, an ethylene group or a single bond. 請求項１〜３のいずれかに記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。  A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.
JP2002158822A 2002-05-31 2002-05-31 Positive resist composition Expired - Fee Related JP4018454B2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002158822A JP4018454B2 (en) 2002-05-31 2002-05-31 Positive resist composition
KR1020030034881A KR100955454B1 (en) 2002-05-31 2003-05-30 Positive-working resist composition
US10/448,041 US6939662B2 (en) 2002-05-31 2003-05-30 Positive-working resist composition
AT03012142T ATE525676T1 (en) 2002-05-31 2003-06-02 POSITIVE WORKING RESISTANT COMPOSITION
EP10188665A EP2278397A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188667.9A EP2278399B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188668A EP2278400A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP03012142A EP1367440B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188666A EP2278398A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
KR1020090108795A KR100947853B1 (en) 2002-05-31 2009-11-11 Positive-working resist composition and pattern forming method using thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002158822A JP4018454B2 (en) 2002-05-31 2002-05-31 Positive resist composition

Publications (3)

Publication Number Publication Date
JP2004004227A JP2004004227A (en) 2004-01-08
JP2004004227A5 true JP2004004227A5 (en) 2005-09-22
JP4018454B2 JP4018454B2 (en) 2007-12-05

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Family Applications (1)

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JP2002158822A Expired - Fee Related JP4018454B2 (en) 2002-05-31 2002-05-31 Positive resist composition

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JP (1) JP4018454B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005275283A (en) 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd Positive resist composition for electron beam, euv ray or x ray, and pattern forming method using same
JP4738803B2 (en) * 2004-12-14 2011-08-03 東京応化工業株式会社 Polymer compound, positive resist composition, and resist pattern forming method
JP4924424B2 (en) * 2005-06-03 2012-04-25 ダイキン工業株式会社 Electromagnetic curing composition for photolithography
JP2008268920A (en) * 2007-03-28 2008-11-06 Fujifilm Corp Positive resist composition and pattern forming method
TWI485517B (en) 2007-04-18 2015-05-21 Daikin Ind Ltd Repellent resist composition
WO2010095746A1 (en) * 2009-02-23 2010-08-26 Jsr株式会社 Compounds, fluorine-containing polymers, and radiation -sensitive resin compositions
JP5825248B2 (en) * 2012-12-12 2015-12-02 信越化学工業株式会社 Positive resist material and pattern forming method using the same
JP6065942B2 (en) * 2015-06-12 2017-01-25 信越化学工業株式会社 High molecular compound
CN108885397B (en) * 2016-03-30 2022-03-01 东京应化工业株式会社 Surface treatment method and surface treatment liquid

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