JP2003158196A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JP2003158196A JP2003158196A JP2001356354A JP2001356354A JP2003158196A JP 2003158196 A JP2003158196 A JP 2003158196A JP 2001356354 A JP2001356354 A JP 2001356354A JP 2001356354 A JP2001356354 A JP 2001356354A JP 2003158196 A JP2003158196 A JP 2003158196A
- Authority
- JP
- Japan
- Prior art keywords
- resistance element
- oxide film
- film
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 239000010410 layer Substances 0.000 claims abstract description 28
- 239000011229 interlayer Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 33
- 150000004767 nitrides Chemical class 0.000 claims description 32
- 238000002955 isolation Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000003870 refractory metal Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 155
- 239000012535 impurity Substances 0.000 description 30
- 238000005530 etching Methods 0.000 description 21
- 238000007796 conventional method Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 11
- 238000010306 acid treatment Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001356354A JP2003158196A (ja) | 2001-11-21 | 2001-11-21 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001356354A JP2003158196A (ja) | 2001-11-21 | 2001-11-21 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003158196A true JP2003158196A (ja) | 2003-05-30 |
| JP2003158196A5 JP2003158196A5 (enrdf_load_stackoverflow) | 2005-07-14 |
Family
ID=19167890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001356354A Pending JP2003158196A (ja) | 2001-11-21 | 2001-11-21 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003158196A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004363234A (ja) * | 2003-06-03 | 2004-12-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2004363284A (ja) * | 2003-06-04 | 2004-12-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2005079290A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2010098110A (ja) * | 2008-10-16 | 2010-04-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2013041956A (ja) * | 2011-08-15 | 2013-02-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP2019021659A (ja) * | 2017-07-11 | 2019-02-07 | キヤノン株式会社 | 半導体装置および機器 |
-
2001
- 2001-11-21 JP JP2001356354A patent/JP2003158196A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004363234A (ja) * | 2003-06-03 | 2004-12-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2004363284A (ja) * | 2003-06-04 | 2004-12-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2005079290A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2010098110A (ja) * | 2008-10-16 | 2010-04-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2013041956A (ja) * | 2011-08-15 | 2013-02-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP2019021659A (ja) * | 2017-07-11 | 2019-02-07 | キヤノン株式会社 | 半導体装置および機器 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041119 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041119 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050609 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050614 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20051018 |