JP2003152160A5 - - Google Patents

Download PDF

Info

Publication number
JP2003152160A5
JP2003152160A5 JP2002316673A JP2002316673A JP2003152160A5 JP 2003152160 A5 JP2003152160 A5 JP 2003152160A5 JP 2002316673 A JP2002316673 A JP 2002316673A JP 2002316673 A JP2002316673 A JP 2002316673A JP 2003152160 A5 JP2003152160 A5 JP 2003152160A5
Authority
JP
Japan
Prior art keywords
layer
metal layer
gate
region
power device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002316673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003152160A (ja
Filing date
Publication date
Priority claimed from IT2001MI002284A external-priority patent/ITMI20012284A1/it
Application filed filed Critical
Publication of JP2003152160A publication Critical patent/JP2003152160A/ja
Publication of JP2003152160A5 publication Critical patent/JP2003152160A5/ja
Pending legal-status Critical Current

Links

JP2002316673A 2001-10-30 2002-10-30 電子パワーデバイス及びその製作方法 Pending JP2003152160A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT2001A002284 2001-10-30
IT2001MI002284A ITMI20012284A1 (it) 2001-10-30 2001-10-30 Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package

Publications (2)

Publication Number Publication Date
JP2003152160A JP2003152160A (ja) 2003-05-23
JP2003152160A5 true JP2003152160A5 (enExample) 2005-11-04

Family

ID=11448561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002316673A Pending JP2003152160A (ja) 2001-10-30 2002-10-30 電子パワーデバイス及びその製作方法

Country Status (4)

Country Link
US (1) US7126173B2 (enExample)
EP (1) EP1310993A3 (enExample)
JP (1) JP2003152160A (enExample)
IT (1) ITMI20012284A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025959B4 (de) * 2006-06-02 2010-03-04 Infineon Technologies Ag Leistungshalbleiteranordnung mit vorderseitig aufgelötetem Clip und Verfahren zur Herstellung einer solchen
US9589937B2 (en) * 2014-08-08 2017-03-07 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd Semiconductor cooling method and method of heat dissipation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4067041A (en) * 1975-09-29 1978-01-03 Hutson Jearld L Semiconductor device package and method of making same
US4561468A (en) * 1982-04-19 1985-12-31 Valcor Engineering Corporation Valve for use in jet engine systems and the like
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
US4561168A (en) * 1982-11-22 1985-12-31 Siliconix Incorporated Method of making shadow isolated metal DMOS FET device
EP0255970B1 (en) * 1986-08-08 1993-12-15 Philips Electronics Uk Limited A method of manufacturing an insulated gate field effect transistor
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
US5767546A (en) 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5681761A (en) * 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO1999004433A2 (en) * 1997-07-19 1999-01-28 Koninklijke Philips Electronics N.V. Mcm semiconductor device assemblies and circuits
US6040626A (en) * 1998-09-25 2000-03-21 International Rectifier Corp. Semiconductor package
US6940142B2 (en) * 2001-07-02 2005-09-06 Xerox Corporation Low data line capacitance image sensor array using air-gap metal crossover
JP2004055812A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
US7274092B2 (en) * 2005-09-13 2007-09-25 Infineon Technologies, Ag Semiconductor component and method of assembling the same

Similar Documents

Publication Publication Date Title
CN101202266B (zh) 芯片级封装及其制造方法和大功率集成电路器件
JP4308671B2 (ja) ワイヤボンドパッドを有する半導体装置とその製作方法
TWI395277B (zh) 晶圓水準的晶片級封裝
US9659854B2 (en) Embedded packaging for devices and systems comprising lateral GaN power transistors
US8329508B2 (en) Semiconductor die packages using thin dies and metal substrates
JP2002164437A (ja) ボンディングおよび電流配分を分散したパワー集積回路および方法
JPH07183302A (ja) 金属層の形成及びボンディング方法
JP7167639B2 (ja) 半導体装置および半導体装置の製造方法
US20210257274A1 (en) Semiconductor element and semiconductor device
CN110246823A (zh) 包含结合垫和结合导线或夹子的半导体器件
US7045831B2 (en) Semiconductor device
US5592026A (en) Integrated structure pad assembly for lead bonding
TWI405300B (zh) 半導體裝置及其製造方法
JP2003152160A5 (enExample)
JP2001044414A (ja) 半導体装置
JP7685925B2 (ja) 半導体装置およびその製造方法
US20190259874A1 (en) Wafer based beol process for chip embedding
US7126173B2 (en) Method for enhancing the electric connection between a power electronic device and its package
US8809695B2 (en) Contact structure for an electronic circuit substrate and electronic circuit comprising said contact structure
GB2535484B (en) Wafer metallization of high power semiconductor devices
CN111584422A (zh) 半导体装置及其制造方法
CN213401191U (zh) 封装结构
JP7694167B2 (ja) 半導体装置
JPH02114657A (ja) 半導体装置の多層配線構造
CN119314963A (zh) 封装结构及其制造方法