JP2003142575A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003142575A5 JP2003142575A5 JP2001341904A JP2001341904A JP2003142575A5 JP 2003142575 A5 JP2003142575 A5 JP 2003142575A5 JP 2001341904 A JP2001341904 A JP 2001341904A JP 2001341904 A JP2001341904 A JP 2001341904A JP 2003142575 A5 JP2003142575 A5 JP 2003142575A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- semiconductor device
- generated
- surge
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001341904A JP4275880B2 (ja) | 2001-11-07 | 2001-11-07 | 半導体装置及びそれを用いた電子装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001341904A JP4275880B2 (ja) | 2001-11-07 | 2001-11-07 | 半導体装置及びそれを用いた電子装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003142575A JP2003142575A (ja) | 2003-05-16 |
JP2003142575A5 true JP2003142575A5 (zh) | 2005-01-27 |
JP4275880B2 JP4275880B2 (ja) | 2009-06-10 |
Family
ID=19155852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001341904A Expired - Fee Related JP4275880B2 (ja) | 2001-11-07 | 2001-11-07 | 半導体装置及びそれを用いた電子装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4275880B2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005027369A1 (de) * | 2005-06-14 | 2006-12-28 | Atmel Germany Gmbh | Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises |
JP5040135B2 (ja) * | 2006-03-24 | 2012-10-03 | 株式会社日立製作所 | 誘電体分離型半導体装置及びその製造方法 |
JP5261929B2 (ja) * | 2006-12-15 | 2013-08-14 | 株式会社デンソー | 半導体装置 |
JP5256750B2 (ja) * | 2008-01-25 | 2013-08-07 | 株式会社デンソー | 半導体装置 |
JP5565309B2 (ja) * | 2010-12-29 | 2014-08-06 | 三菱電機株式会社 | 半導体装置 |
CN102361031B (zh) * | 2011-10-19 | 2013-07-17 | 电子科技大学 | 一种用于soi高压集成电路的半导体器件 |
CN103489865B (zh) * | 2013-09-16 | 2015-10-21 | 电子科技大学 | 一种横向集成soi半导体功率器件 |
-
2001
- 2001-11-07 JP JP2001341904A patent/JP4275880B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9966871B2 (en) | Rectification device, alternator, and power conversion device | |
JP4643996B2 (ja) | チャージポンプ回路及びその昇圧方法 | |
JP2006261427A (ja) | 半導体集積回路装置 | |
WO2005065138A3 (en) | High efficiency, low cost, charge pump circuit | |
US8750539B2 (en) | Charge pump circuits | |
JP2008017596A (ja) | 半導体集積回路 | |
JP2003197792A (ja) | 半導体装置 | |
JP2006302971A (ja) | 電源クランプ回路及び半導体装置 | |
JP2003197791A (ja) | 半導体装置及びその製造方法 | |
US20140110772A1 (en) | Integrated circuit decoupling capacitor arrangement | |
JPH11127590A (ja) | 集積化hブリッジ回路及びその製造方法 | |
JP2003197790A (ja) | 半導体装置及びその製造方法 | |
JP2006121448A (ja) | 電流源回路 | |
JP2003142575A5 (zh) | ||
JPH09114534A (ja) | 基準電圧発生回路 | |
TWI360297B (en) | I/o circuit | |
TWI311006B (zh) | ||
US6542346B1 (en) | High-voltage tolerance input buffer and ESD protection circuit | |
JP2000286687A (ja) | レベルシフト回路及びインバータ装置 | |
JP4275880B2 (ja) | 半導体装置及びそれを用いた電子装置 | |
JP2006086477A (ja) | 半導体装置 | |
US7087968B1 (en) | Electrostatic discharge protection circuit and semiconductor circuit therewith | |
TW200941068A (en) | A latch-up protection circuit for LCD driver | |
US20050280084A1 (en) | Semiconductor device | |
JP2008029085A (ja) | スイッチング素子の駆動装置およびスイッチング定電圧電源装置 |