JP2003115488A5 - - Google Patents
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- Publication number
- JP2003115488A5 JP2003115488A5 JP2001307318A JP2001307318A JP2003115488A5 JP 2003115488 A5 JP2003115488 A5 JP 2003115488A5 JP 2001307318 A JP2001307318 A JP 2001307318A JP 2001307318 A JP2001307318 A JP 2001307318A JP 2003115488 A5 JP2003115488 A5 JP 2003115488A5
- Authority
- JP
- Japan
- Prior art keywords
- copper film
- metal layer
- barrier metal
- polishing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 15
- 229910052802 copper Inorganic materials 0.000 claims 15
- 239000010949 copper Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 12
- 230000004888 barrier function Effects 0.000 claims 9
- 229910052751 metal Inorganic materials 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 9
- 238000005498 polishing Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000002002 slurry Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 3
- 230000009977 dual effect Effects 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001307318A JP2003115488A (ja) | 2001-10-03 | 2001-10-03 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001307318A JP2003115488A (ja) | 2001-10-03 | 2001-10-03 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003115488A JP2003115488A (ja) | 2003-04-18 |
| JP2003115488A5 true JP2003115488A5 (enExample) | 2005-06-23 |
Family
ID=19126796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001307318A Pending JP2003115488A (ja) | 2001-10-03 | 2001-10-03 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003115488A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7232362B2 (en) * | 2004-10-12 | 2007-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing process for manufacturing semiconductor devices |
| KR100635875B1 (ko) * | 2004-12-30 | 2006-10-18 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
| US8728934B2 (en) | 2011-06-24 | 2014-05-20 | Tessera, Inc. | Systems and methods for producing flat surfaces in interconnect structures |
| KR102591632B1 (ko) | 2016-12-09 | 2023-10-20 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| CN114227527A (zh) * | 2020-09-09 | 2022-03-25 | 中国科学院微电子研究所 | 研磨试剂及其制备方法、化学机械研磨方法及其装置 |
| CN113370001A (zh) * | 2021-05-25 | 2021-09-10 | 上海工程技术大学 | 一种硅衬底化学机械抛光方法 |
| JP2025146233A (ja) | 2024-03-22 | 2025-10-03 | 株式会社東京精密 | Ｃｍｐ装置およびその研磨温度制御方法 |
-
2001
- 2001-10-03 JP JP2001307318A patent/JP2003115488A/ja active Pending
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