JP2001110896A5 - - Google Patents

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Publication number
JP2001110896A5
JP2001110896A5 JP1999288445A JP28844599A JP2001110896A5 JP 2001110896 A5 JP2001110896 A5 JP 2001110896A5 JP 1999288445 A JP1999288445 A JP 1999288445A JP 28844599 A JP28844599 A JP 28844599A JP 2001110896 A5 JP2001110896 A5 JP 2001110896A5
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JP
Japan
Prior art keywords
hole
insulating film
connection hole
metal layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1999288445A
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English (en)
Japanese (ja)
Other versions
JP2001110896A (ja
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Publication date
Application filed filed Critical
Priority to JP28844599A priority Critical patent/JP2001110896A/ja
Priority claimed from JP28844599A external-priority patent/JP2001110896A/ja
Publication of JP2001110896A publication Critical patent/JP2001110896A/ja
Publication of JP2001110896A5 publication Critical patent/JP2001110896A5/ja
Withdrawn legal-status Critical Current

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JP28844599A 1999-10-08 1999-10-08 半導体装置の製造方法 Withdrawn JP2001110896A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28844599A JP2001110896A (ja) 1999-10-08 1999-10-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28844599A JP2001110896A (ja) 1999-10-08 1999-10-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001110896A JP2001110896A (ja) 2001-04-20
JP2001110896A5 true JP2001110896A5 (enExample) 2004-10-28

Family

ID=17730312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28844599A Withdrawn JP2001110896A (ja) 1999-10-08 1999-10-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2001110896A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208633A (ja) * 2001-01-10 2002-07-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP3718458B2 (ja) 2001-06-21 2005-11-24 セイコーエプソン株式会社 半導体装置の製造方法
JP4571785B2 (ja) 2003-05-30 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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