JP2001110896A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP2001110896A JP2001110896A JP28844599A JP28844599A JP2001110896A JP 2001110896 A JP2001110896 A JP 2001110896A JP 28844599 A JP28844599 A JP 28844599A JP 28844599 A JP28844599 A JP 28844599A JP 2001110896 A JP2001110896 A JP 2001110896A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- film
- insulating film
- metal layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 29
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 abstract description 33
- 239000010410 layer Substances 0.000 description 72
- 238000005498 polishing Methods 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910018182 Al—Cu Inorganic materials 0.000 description 7
- 239000004744 fabric Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28844599A JP2001110896A (ja) | 1999-10-08 | 1999-10-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28844599A JP2001110896A (ja) | 1999-10-08 | 1999-10-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001110896A true JP2001110896A (ja) | 2001-04-20 |
| JP2001110896A5 JP2001110896A5 (enExample) | 2004-10-28 |
Family
ID=17730312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28844599A Withdrawn JP2001110896A (ja) | 1999-10-08 | 1999-10-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001110896A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002208633A (ja) * | 2001-01-10 | 2002-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6780760B2 (en) | 2001-06-21 | 2004-08-24 | Seiko Epson Corporation | Methods for manufacturing semiconductor devices |
| US7807567B2 (en) | 2003-05-30 | 2010-10-05 | Nec Electronics Corporation | Semiconductor device with interconnection structure for reducing stress migration |
-
1999
- 1999-10-08 JP JP28844599A patent/JP2001110896A/ja not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002208633A (ja) * | 2001-01-10 | 2002-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6780760B2 (en) | 2001-06-21 | 2004-08-24 | Seiko Epson Corporation | Methods for manufacturing semiconductor devices |
| US7807567B2 (en) | 2003-05-30 | 2010-10-05 | Nec Electronics Corporation | Semiconductor device with interconnection structure for reducing stress migration |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050120 |
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| A131 | Notification of reasons for refusal |
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| A521 | Written amendment |
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| A02 | Decision of refusal |
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| A521 | Written amendment |
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|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20071010 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20071109 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20100205 |