JP2003069027A5 - - Google Patents

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Publication number
JP2003069027A5
JP2003069027A5 JP2001254685A JP2001254685A JP2003069027A5 JP 2003069027 A5 JP2003069027 A5 JP 2003069027A5 JP 2001254685 A JP2001254685 A JP 2001254685A JP 2001254685 A JP2001254685 A JP 2001254685A JP 2003069027 A5 JP2003069027 A5 JP 2003069027A5
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JP
Japan
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Application number
JP2001254685A
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JP2003069027A (ja
JP4618948B2 (ja
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Priority to JP2001254685A priority Critical patent/JP4618948B2/ja
Priority claimed from JP2001254685A external-priority patent/JP4618948B2/ja
Priority to US10/218,035 priority patent/US6887724B2/en
Publication of JP2003069027A publication Critical patent/JP2003069027A/ja
Priority to US10/921,143 priority patent/US7525118B2/en
Publication of JP2003069027A5 publication Critical patent/JP2003069027A5/ja
Application granted granted Critical
Publication of JP4618948B2 publication Critical patent/JP4618948B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001254685A 2001-08-24 2001-08-24 半導体装置の評価方法 Expired - Fee Related JP4618948B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001254685A JP4618948B2 (ja) 2001-08-24 2001-08-24 半導体装置の評価方法
US10/218,035 US6887724B2 (en) 2001-08-24 2002-08-14 Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device
US10/921,143 US7525118B2 (en) 2001-08-24 2004-08-19 Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001254685A JP4618948B2 (ja) 2001-08-24 2001-08-24 半導体装置の評価方法

Publications (3)

Publication Number Publication Date
JP2003069027A JP2003069027A (ja) 2003-03-07
JP2003069027A5 true JP2003069027A5 (ja) 2006-11-30
JP4618948B2 JP4618948B2 (ja) 2011-01-26

Family

ID=19082811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001254685A Expired - Fee Related JP4618948B2 (ja) 2001-08-24 2001-08-24 半導体装置の評価方法

Country Status (2)

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US (2) US6887724B2 (ja)
JP (1) JP4618948B2 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472239B2 (en) * 2001-04-02 2002-10-29 Micron Technology, Inc. Method for fabricating semiconductor components
JP4531323B2 (ja) * 2002-09-13 2010-08-25 株式会社半導体エネルギー研究所 レーザ装置、レーザ照射方法、および半導体装置の作製方法
US7256079B2 (en) * 2002-12-16 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Evaluation method using a TEG, a method of manufacturing a semiconductor device having a TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recoding the program
JP4464078B2 (ja) 2003-06-20 2010-05-19 株式会社 日立ディスプレイズ 画像表示装置
CN1842065A (zh) * 2005-03-29 2006-10-04 上海贝尔阿尔卡特股份有限公司 在移动网络中分别通过电路交换和分组交换进行语音和数据组呼业务的方法和装置
US7550382B2 (en) * 2005-05-31 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device
US7365611B2 (en) * 2005-06-01 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Element substrate, test method for element substrate, and manufacturing method for semiconductor device
US7479655B2 (en) * 2006-01-31 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8008912B1 (en) 2008-12-16 2011-08-30 Western Digital (Fremont), Llc Method and system for testing P2 stiffness of a magnetoresistance transducer at the wafer level
JP2013053981A (ja) * 2011-09-06 2013-03-21 Sharp Corp Ｔｆｔ基板の欠陥検査装置及び方法
US9293073B2 (en) * 2011-12-14 2016-03-22 Shenzhen China Star Optoelectronics Technology Co., Ltd. Testing system
CN103308772B (zh) * 2012-03-16 2015-11-25 中芯国际集成电路制造(上海)有限公司 半导体检测电路及检测方法
CN105609023B (zh) * 2015-12-31 2018-08-07 京东方科技集团股份有限公司 一种测试元件组、阵列基板、检测设备及检测方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092653A (ja) * 1983-10-26 1985-05-24 Toshiba Corp 半導体集積回路装置
JPS61220454A (ja) * 1985-03-27 1986-09-30 Toshiba Corp 半導体集積回路装置の製造方法
JPH02300676A (ja) * 1989-05-15 1990-12-12 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタのモデルパラメータ値の測定抽出法
JP2502787B2 (ja) * 1990-04-27 1996-05-29 シャープ株式会社 Ｍｏｓ型薄膜トランジスタの製造方法
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (ja) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN100405530C (zh) * 1996-05-15 2008-07-23 精工爱普生株式会社 薄膜器件的制造方法
JP3645377B2 (ja) 1996-10-24 2005-05-11 株式会社半導体エネルギー研究所 集積回路の作製方法
JP3597331B2 (ja) 1996-10-24 2004-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP4388648B2 (ja) * 1999-10-29 2009-12-24 シャープ株式会社 薄膜トランジスタ、液晶表示装置、およびその製造方法
JP4149168B2 (ja) * 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
JP2003197767A (ja) * 2001-12-21 2003-07-11 Toshiba Corp 半導体装置及びその製造方法

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