JP2003049280A - 無電解めっき液及び半導体装置 - Google Patents

無電解めっき液及び半導体装置

Info

Publication number
JP2003049280A
JP2003049280A JP2001179341A JP2001179341A JP2003049280A JP 2003049280 A JP2003049280 A JP 2003049280A JP 2001179341 A JP2001179341 A JP 2001179341A JP 2001179341 A JP2001179341 A JP 2001179341A JP 2003049280 A JP2003049280 A JP 2003049280A
Authority
JP
Japan
Prior art keywords
semiconductor device
electroless plating
wiring
semiconductor substrate
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001179341A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003049280A5 (enrdf_load_stackoverflow
Inventor
Hiroaki Inoue
裕章 井上
Kenji Nakamura
憲二 中村
Moriharu Matsumoto
守治 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
JCU Corp
Original Assignee
Ebara Corp
Ebara Udylite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Ebara Udylite Co Ltd filed Critical Ebara Corp
Priority to JP2001179341A priority Critical patent/JP2003049280A/ja
Priority to PCT/JP2002/005250 priority patent/WO2002099164A2/en
Priority to CNB028111192A priority patent/CN1285764C/zh
Priority to KR1020037015760A priority patent/KR100891344B1/ko
Priority to TW091111514A priority patent/TW543091B/zh
Publication of JP2003049280A publication Critical patent/JP2003049280A/ja
Publication of JP2003049280A5 publication Critical patent/JP2003049280A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001179341A 2001-06-01 2001-06-13 無電解めっき液及び半導体装置 Pending JP2003049280A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001179341A JP2003049280A (ja) 2001-06-01 2001-06-13 無電解めっき液及び半導体装置
PCT/JP2002/005250 WO2002099164A2 (en) 2001-06-01 2002-05-30 Electroless-plating solution and semiconductor device
CNB028111192A CN1285764C (zh) 2001-06-01 2002-05-30 无电电镀溶液
KR1020037015760A KR100891344B1 (ko) 2001-06-01 2002-05-30 무전해 도금액 및 반도체 디바이스
TW091111514A TW543091B (en) 2001-06-01 2002-05-30 Electroless-plating solution and semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-167355 2001-06-01
JP2001167355 2001-06-01
JP2001179341A JP2003049280A (ja) 2001-06-01 2001-06-13 無電解めっき液及び半導体装置

Publications (2)

Publication Number Publication Date
JP2003049280A true JP2003049280A (ja) 2003-02-21
JP2003049280A5 JP2003049280A5 (enrdf_load_stackoverflow) 2005-02-17

Family

ID=26616238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001179341A Pending JP2003049280A (ja) 2001-06-01 2001-06-13 無電解めっき液及び半導体装置

Country Status (5)

Country Link
JP (1) JP2003049280A (enrdf_load_stackoverflow)
KR (1) KR100891344B1 (enrdf_load_stackoverflow)
CN (1) CN1285764C (enrdf_load_stackoverflow)
TW (1) TW543091B (enrdf_load_stackoverflow)
WO (1) WO2002099164A2 (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260106A (ja) * 2003-02-27 2004-09-16 Ebara Corp 基板処理方法及び基板処理装置
JP2004304021A (ja) * 2003-03-31 2004-10-28 Ebara Corp 半導体装置の製造方法及び製造装置
JP2007246980A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246978A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246981A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246979A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
KR100774651B1 (ko) 2006-07-21 2007-11-08 동부일렉트로닉스 주식회사 반도체 소자의 구리배선 형성방법 및 구조
WO2008047578A1 (fr) * 2006-09-29 2008-04-24 Wako Pure Chemical Industries, Ltd. composition pour dépôt autocatalytique et procédé de formation d'un film de protection métallique à l'aide de la composition
JP2010513720A (ja) * 2006-12-22 2010-04-30 ラム リサーチ コーポレーション コバルト合金の無電解堆積

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005015885A (ja) * 2003-06-27 2005-01-20 Ebara Corp 基板処理方法及び装置
KR100859259B1 (ko) 2005-12-29 2008-09-18 주식회사 엘지화학 캡층 형성을 위한 코발트 계열 합금 무전해 도금 용액 및이를 이용하는 무전해 도금 방법
US9496145B2 (en) 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102297A (en) * 1979-01-22 1980-08-05 Richardson Chemical Co Method of controlling to electrolessly plate surface of support and product fabricated thereby
JPH04503378A (ja) * 1989-02-17 1992-06-18 ポリメタルズ　テクノロジィ　リミテッド メッキ組成物およびメッキ方法
JPH051384A (ja) * 1991-06-21 1993-01-08 Nec Corp 無電解めつき浴
JPH07220921A (ja) * 1994-01-27 1995-08-18 Tetsuya Aisaka 軟磁性薄膜およびその製造方法ならびに無電解めっき浴
WO2001008213A1 (en) * 1999-07-27 2001-02-01 International Business Machines Corporation REDUCED ELECTROMIGRATION AND STRESS INDUCED MIGRATION OF Cu WIRES BY SURFACE COATING

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3917464A (en) * 1973-07-20 1975-11-04 Us Army Electroless deposition of cobalt boron
US5203911A (en) * 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US5240497A (en) * 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
KR19990015599A (ko) * 1997-08-07 1999-03-05 윤종용 무전해 도금을 이용한 반도체장치의 듀얼 다마슨금속 배선층 형성방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102297A (en) * 1979-01-22 1980-08-05 Richardson Chemical Co Method of controlling to electrolessly plate surface of support and product fabricated thereby
JPH04503378A (ja) * 1989-02-17 1992-06-18 ポリメタルズ　テクノロジィ　リミテッド メッキ組成物およびメッキ方法
JPH051384A (ja) * 1991-06-21 1993-01-08 Nec Corp 無電解めつき浴
JPH07220921A (ja) * 1994-01-27 1995-08-18 Tetsuya Aisaka 軟磁性薄膜およびその製造方法ならびに無電解めっき浴
WO2001008213A1 (en) * 1999-07-27 2001-02-01 International Business Machines Corporation REDUCED ELECTROMIGRATION AND STRESS INDUCED MIGRATION OF Cu WIRES BY SURFACE COATING

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260106A (ja) * 2003-02-27 2004-09-16 Ebara Corp 基板処理方法及び基板処理装置
JP2004304021A (ja) * 2003-03-31 2004-10-28 Ebara Corp 半導体装置の製造方法及び製造装置
JP2007246980A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246978A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246981A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246979A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
KR100774651B1 (ko) 2006-07-21 2007-11-08 동부일렉트로닉스 주식회사 반도체 소자의 구리배선 형성방법 및 구조
WO2008047578A1 (fr) * 2006-09-29 2008-04-24 Wako Pure Chemical Industries, Ltd. composition pour dépôt autocatalytique et procédé de formation d'un film de protection métallique à l'aide de la composition
JP2010513720A (ja) * 2006-12-22 2010-04-30 ラム リサーチ コーポレーション コバルト合金の無電解堆積
KR101518519B1 (ko) 2006-12-22 2015-05-07 램 리써치 코포레이션 코발트 합금의 무전해 증착

Also Published As

Publication number Publication date
TW543091B (en) 2003-07-21
CN1285764C (zh) 2006-11-22
WO2002099164A2 (en) 2002-12-12
CN1527888A (zh) 2004-09-08
WO2002099164A3 (en) 2004-05-21
KR20040008205A (ko) 2004-01-28
KR100891344B1 (ko) 2009-03-31

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