JP2003043362A - 反射屈折縮小レンズ - Google Patents

反射屈折縮小レンズ

Info

Publication number
JP2003043362A
JP2003043362A JP2002140881A JP2002140881A JP2003043362A JP 2003043362 A JP2003043362 A JP 2003043362A JP 2002140881 A JP2002140881 A JP 2002140881A JP 2002140881 A JP2002140881 A JP 2002140881A JP 2003043362 A JP2003043362 A JP 2003043362A
Authority
JP
Japan
Prior art keywords
lens
image
intermediate image
catadioptric
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002140881A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003043362A5 (enExample
Inventor
Alexander Epple
エプル アレキサンダー
Helmut Beierl
バイエール ヘルムート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of JP2003043362A publication Critical patent/JP2003043362A/ja
Publication of JP2003043362A5 publication Critical patent/JP2003043362A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/14Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/22Telecentric objectives or lens systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2002140881A 2001-05-22 2002-05-16 反射屈折縮小レンズ Pending JP2003043362A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10127227.8 2001-05-22
DE10127227A DE10127227A1 (de) 2001-05-22 2001-05-22 Katadioptrisches Reduktionsobjektiv

Publications (2)

Publication Number Publication Date
JP2003043362A true JP2003043362A (ja) 2003-02-13
JP2003043362A5 JP2003043362A5 (enExample) 2005-09-29

Family

ID=7687230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002140881A Pending JP2003043362A (ja) 2001-05-22 2002-05-16 反射屈折縮小レンズ

Country Status (5)

Country Link
US (2) US6717746B2 (enExample)
EP (1) EP1260845A3 (enExample)
JP (1) JP2003043362A (enExample)
KR (1) KR20020089204A (enExample)
DE (1) DE10127227A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7283294B2 (en) 2004-10-25 2007-10-16 Canon Kabushiki Kaisha Catadioptric projection optical system, exposure apparatus having the same, device fabrication method
JP2008542829A (ja) * 2005-06-02 2008-11-27 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ投影対物レンズ

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
TW538256B (en) * 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US7301605B2 (en) * 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
DE10127227A1 (de) * 2001-05-22 2002-12-05 Zeiss Carl Katadioptrisches Reduktionsobjektiv
US7136220B2 (en) * 2001-08-21 2006-11-14 Carl Zeiss Smt Ag Catadioptric reduction lens
US20040075894A1 (en) * 2001-12-10 2004-04-22 Shafer David R. Catadioptric reduction objective
US20050190446A1 (en) * 2002-06-25 2005-09-01 Carl Zeiss Amt Ag Catadioptric reduction objective
TWI249082B (en) * 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US6731374B1 (en) * 2002-12-02 2004-05-04 Asml Holding N.V. Beam-splitter optics design that maintains an unflipped (unmirrored) image for a catadioptric lithographic system
DE10316428A1 (de) * 2003-04-08 2004-10-21 Carl Zeiss Smt Ag Katadioptrisches Reduktionsobjektiv
JP3728301B2 (ja) * 2003-05-30 2005-12-21 株式会社オーク製作所 投影光学系
DE10338983A1 (de) 2003-08-20 2005-03-17 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithografie
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) * 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
US20080151364A1 (en) * 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
US7463422B2 (en) * 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
EP1564594A1 (de) * 2004-02-17 2005-08-17 Carl Zeiss SMT AG Projektionsobjektiv für die Mikrolithographie
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
JP2006138940A (ja) * 2004-11-10 2006-06-01 Canon Inc 反射屈折型投影光学系及び投影反射屈折型投影光学系を有する露光装置、デバイス製造方法
US20060158615A1 (en) * 2005-01-18 2006-07-20 Williamson David M Catadioptric 1x projection system and method
US20070091452A1 (en) * 2005-10-25 2007-04-26 Scott Lerner Projection system and method
US7920338B2 (en) * 2006-03-28 2011-04-05 Carl Zeiss Smt Gmbh Reduction projection objective and projection exposure apparatus including the same
US7738188B2 (en) * 2006-03-28 2010-06-15 Carl Zeiss Smt Ag Projection objective and projection exposure apparatus including the same
US20070247729A1 (en) * 2006-04-25 2007-10-25 Rudolph Technologies, Inc. Reflective objective
DE102006022958A1 (de) 2006-05-11 2007-11-22 Carl Zeiss Smt Ag Projektionsbelichtungsanlage, Projektionsbelichtungsverfahren und Verwendung eines Projektionsobjektivs
DE102006045075A1 (de) * 2006-09-21 2008-04-03 Carl Zeiss Smt Ag Steuerbares optisches Element
EP2181357A1 (en) * 2007-08-24 2010-05-05 Carl Zeiss SMT AG Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
US7760425B2 (en) * 2007-09-05 2010-07-20 Carl Zeiss Smt Ag Chromatically corrected catadioptric objective and projection exposure apparatus including the same
KR101510493B1 (ko) * 2007-10-02 2015-04-08 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투사 대물렌즈
US8345350B2 (en) 2008-06-20 2013-01-01 Carl Zeiss Smt Gmbh Chromatically corrected objective with specifically structured and arranged dioptric optical elements and projection exposure apparatus including the same
KR101626737B1 (ko) 2009-05-16 2016-06-01 칼 짜이스 에스엠테 게엠베하 광학 교정 배열체를 포함하는 반도체 리소그래피를 위한 투사 노광 장치
DE102010021539B4 (de) 2010-05-19 2014-10-09 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Blenden
US8830590B2 (en) * 2012-05-30 2014-09-09 Ultratech, Inc. Unit magnification large-format catadioptric lens for microlithography
DE102015207154A1 (de) 2014-05-09 2015-11-12 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator
DE102017204619A1 (de) 2016-04-05 2017-10-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren, Projektionsobjektiv und Projektionsbelichtungsanlage für die Mikrolithographie
JP7183608B2 (ja) * 2018-07-27 2022-12-06 セイコーエプソン株式会社 レンズおよび投写型画像表示装置
CN117031695B (zh) * 2023-08-21 2024-02-09 东莞锐视光电科技有限公司 光刻镜头装置

Citations (3)

* Cited by examiner, † Cited by third party
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JPH08203812A (ja) * 1995-01-30 1996-08-09 Nikon Corp 反射屈折縮小投影光学系及び露光装置
JPH11295605A (ja) * 1998-04-07 1999-10-29 Nikon Corp 直筒型反射屈折光学系
JP2001027727A (ja) * 1999-07-13 2001-01-30 Nikon Corp 反射屈折光学系及び該光学系を備える投影露光装置

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US5140459A (en) * 1989-08-29 1992-08-18 Texas Instruments Apparatus and method for optical relay and reimaging
US5052763A (en) 1990-08-28 1991-10-01 International Business Machines Corporation Optical system with two subsystems separately correcting odd aberrations and together correcting even aberrations
US5592329A (en) * 1993-02-03 1997-01-07 Nikon Corporation Catadioptric optical system
US5636066A (en) * 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3395801B2 (ja) 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
JPH1010429A (ja) 1996-06-19 1998-01-16 Nikon Corp 2回結像光学系
US6157498A (en) 1996-06-19 2000-12-05 Nikon Corporation Dual-imaging optical system
JPH1010431A (ja) 1996-06-20 1998-01-16 Nikon Corp 反射屈折光学系
JPH1020195A (ja) * 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
US6169627B1 (en) * 1996-09-26 2001-01-02 Carl-Zeiss-Stiftung Catadioptric microlithographic reduction objective
DE19639586A1 (de) * 1996-09-26 1998-04-02 Zeiss Carl Fa Katadioptrisches Mikrolithographie-Reduktionsobjektiv
US5969882A (en) 1997-04-01 1999-10-19 Nikon Corporation Catadioptric optical system
KR100245414B1 (ko) * 1997-06-26 2000-03-02 윤종용 노광 시스템과 노광 시스템의 노광 방법
EP0989434B1 (en) * 1998-07-29 2006-11-15 Carl Zeiss SMT AG Catadioptric optical system and exposure apparatus having the same
EP1102100A3 (de) * 1999-11-12 2003-12-10 Carl Zeiss Katadioptrisches Objektiv mit physikalischem Strahlteiler
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US6844915B2 (en) * 2001-08-01 2005-01-18 Nikon Corporation Optical system and exposure apparatus provided with the optical system
TW575904B (en) * 2001-08-21 2004-02-11 Asml Us Inc Optical projection for microlithography
EP1430346A1 (en) * 2001-09-20 2004-06-23 Carl Zeiss SMT AG Catadioptric reduction lens
TW559885B (en) 2001-10-19 2003-11-01 Nikon Corp Projection optical system and exposure device having the projection optical system
US20040075894A1 (en) * 2001-12-10 2004-04-22 Shafer David R. Catadioptric reduction objective
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JPH08203812A (ja) * 1995-01-30 1996-08-09 Nikon Corp 反射屈折縮小投影光学系及び露光装置
JPH11295605A (ja) * 1998-04-07 1999-10-29 Nikon Corp 直筒型反射屈折光学系
JP2001027727A (ja) * 1999-07-13 2001-01-30 Nikon Corp 反射屈折光学系及び該光学系を備える投影露光装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7283294B2 (en) 2004-10-25 2007-10-16 Canon Kabushiki Kaisha Catadioptric projection optical system, exposure apparatus having the same, device fabrication method
JP2008542829A (ja) * 2005-06-02 2008-11-27 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ投影対物レンズ
JP2012186508A (ja) * 2005-06-02 2012-09-27 Carl Zeiss Smt Gmbh マイクロリソグラフィ投影対物レンズ
JP2014143445A (ja) * 2005-06-02 2014-08-07 Carl Zeiss Smt Gmbh マイクロリソグラフィ投影対物レンズ
KR20140130454A (ko) * 2005-06-02 2014-11-10 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR101483791B1 (ko) * 2005-06-02 2015-01-16 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
US9097984B2 (en) 2005-06-02 2015-08-04 Carl Zeiss Smt Gmbh Microlithography projection objective
KR20160010647A (ko) * 2005-06-02 2016-01-27 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR101590743B1 (ko) * 2005-06-02 2016-02-01 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR101629160B1 (ko) 2005-06-02 2016-06-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR101763092B1 (ko) 2005-06-02 2017-07-28 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR20170088445A (ko) * 2005-06-02 2017-08-01 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR101890082B1 (ko) 2005-06-02 2018-08-20 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR20180094133A (ko) * 2005-06-02 2018-08-22 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
KR101954588B1 (ko) 2005-06-02 2019-03-05 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈
US10281824B2 (en) 2005-06-02 2019-05-07 Carl Zeiss Smt Gmbh Microlithography projection objective

Also Published As

Publication number Publication date
KR20020089204A (ko) 2002-11-29
DE10127227A1 (de) 2002-12-05
US6717746B2 (en) 2004-04-06
US20030021040A1 (en) 2003-01-30
US7006304B2 (en) 2006-02-28
US20040160677A1 (en) 2004-08-19
EP1260845A2 (de) 2002-11-27
EP1260845A3 (de) 2004-01-02

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