JP2003017827A - Mounting structure of high-frequency circuit component mounting board - Google Patents

Mounting structure of high-frequency circuit component mounting board

Info

Publication number
JP2003017827A
JP2003017827A JP2001197242A JP2001197242A JP2003017827A JP 2003017827 A JP2003017827 A JP 2003017827A JP 2001197242 A JP2001197242 A JP 2001197242A JP 2001197242 A JP2001197242 A JP 2001197242A JP 2003017827 A JP2003017827 A JP 2003017827A
Authority
JP
Japan
Prior art keywords
conductor
line conductor
frequency
line
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001197242A
Other languages
Japanese (ja)
Inventor
Shigeo Morioka
滋生 森岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001197242A priority Critical patent/JP2003017827A/en
Publication of JP2003017827A publication Critical patent/JP2003017827A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Abstract

PROBLEM TO BE SOLVED: To prevent high-frequency signals from leaking out partially and a parasitic capacitance from occurring in a high-frequency board and deteriorating its transmission characteristics, when the high-frequency signals are propagated from an external circuit board to the high-frequency board. SOLUTION: A high-frequency board is equipped with a first line conductor 2, a first grounding conductor 3 formed on the top surface of a dielectric board 1, a second line conductor 4, a second grounding conductor 5 formed on the under surface of the dielectric board 1, and a through-conductor 6 and a grounding through conductor 7 formed inside the dielectric board 1. A circuit board 11 is equipped with a connection line conductor 10, which is formed on its top surface to transmit high frequency signals. The above high-frequency board is arranged on the circuit board 11 so as to make the second line conductor 4 confront the connection line conductor 10, while being kept in parallel with it; a metal terminal 12 which is arranged on the peripheral part of the dielectric board 1 and positions its one end 0.2 to 5.0 mm apart from the through-conductor 6 is interposed between the second line conductor 4 and the connection conductor 10; the connection line conductor 10 is positioned outside of the halfway point of the metal terminal 12 and electrically connected to it.

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、高周波回路部品搭
載用基板の実装構造に関するものであり、例えばマイク
ロ波帯域からミリ波帯域の高周波用の半導体素子を搭載
する高周波回路部品搭載用基板を外部装置に実装する場
合に好適な実装構造に関する。 【0002】 【従来の技術】従来、MHz帯やGHz帯の高周波信号
を用いる無線通信機器等の高周波回路あるいは高周波用
の半導体素子等の高周波回路部品を搭載する高周波回路
部品搭載用基板(以下、高周波基板という)において
は、高周波基板に搭載される半導体素子等の高周波回路
部品と、その高周波基板が実装される回路基板の高周波
回路とを電気的に接続して、高周波信号の良好な伝送特
性を得るために、高周波信号を伝送する線路導体を上下
面にそれぞれ形成してそれらを貫通導体で電気的に接続
している。 【0003】また、高周波基板の下面の線路導体には金
属端子が取着されて高周波信号の入出力部が形成され
る。そして、高周波信号の入出力部となる金属端子が取
着された高周波基板を回路基板に搭載するとともに、高
周波基板の下面に取着された金属端子を回路基板の接続
用線路導体に電気的に接続することにより、高周波基板
が回路基板に実装されて使用されることになる。 【0004】このような高周波基板の実装構造の一例と
して、例えば図6に要部拡大断面図で示すような実装構
造がある。同図は、高周波基板が高周波用の半導体素子
収納用パッケージ(以下、半導体パッケージという)を
構成する場合を示している。 【0005】図6の半導体パッケージにおいて、誘電体
基板21の上面に高周波用の半導体素子Sを搭載する搭
載部21aが形成されるとともに搭載部21a近傍から
外周方向に第1の線路導体22が形成され、また、第1
の線路導体22の両側には第1の同一面接地導体23が
形成されている。さらに、誘電体基板21の下面には、
第1の線路導体22の外周側の一端と対向する部位から
外周端に向けて第1の線路導体22と平行に第2の線路
導体24が形成される。第2の線路導体24の両側に第
2の同一面接地導体25が形成される。また、誘電体基
板21の内部には、第1の線路導体22および第2の線
路導体24の対向する端部同士を電気的に接続する貫通
導体26ならびに第1の同一面接地導体23および第2
の同一面接地導体25を電気的に接続する接地貫通導体
(図示せず)とが形成される。 【0006】そして、搭載部21aに搭載した半導体素
子Sをボンディングワイヤ等の導電性接続部材28によ
り第1の線路導体22と電気的に接続し、搭載部21a
の上面に蓋体(図示せず)を取着して半導体素子Sを気
密に封止した後、この半導体パッケージをアルミナセラ
ミックス等の誘電体材料から成る誘電体基板29の上面
に接続用線路導体30が形成された回路基板31に、第
2の線路導体24および接続用線路導体30を平行に対
向させて、間に金属端子32を挟んで電気的に接続して
いる。なお、この例では、誘電体基板29の下面に下面
側接地導体33と、上面に上面側接地導体34とを形成
し、上面側接地導体34と第2の同一面接地導体25と
を電気的に接続している。 【0007】このような半導体パッケージによれば、第
1および第2の同一面接地導体23,25を設けたこと
により、第1の線路導体22とボンディングワイヤ等の
導電性接続部材28との不連続性を補償したり、第1,
第2の線路導体22,24のアイソレーションを向上さ
せることができる。また、接地貫通導体は、高インピー
ダンスの貫通導体26に対して容量成分を補うことがで
き、貫通導体26におけるインピーダンスの不整合を防
ぐことが可能である。これらの結果、半導体素子Sと外
部電気回路との間の電気的接続におけるインピーダンス
の不整合を効果的に抑えて、高周波信号の伝送特性の劣
化を抑えることができ、低反射損失の半導体パッケージ
とすることができる。 【0008】なお、上記従来の高周波基板の実装構造で
は、高周波信号の伝送線路を最短としてそのインピーダ
ンスを低減するために、高周波信号の入出力部となる金
属端子32の一端を貫通導体26下端に重ねて接続して
いる。また、金属端子32を接続するための接続用線路
導体30を、金属端子32の貫通導体26直下の位置か
ら誘電体基板の外周側にかけて形成している。 【0009】 【発明が解決しようとする課題】しかしながら、上記の
ような高周波信号の入出力部となる金属端子32の一端
を貫通導体26に重ねて接続している高周波基板の実装
構造においては、図6に示す高周波信号Cが、回路基板
29の接続用線路導体30から金属端子32を介して高
周波基板の第2の線路導体24へ伝搬する際に、金属端
子32の貫通導体26と重なった先端部でその進行方向
を90°上側に変更されて貫通導体26に伝搬される。
ところが、高周波信号Cがその進行方向を90°変更さ
れて伝播される際に、高周波信号Cの一部が図6の矢印
Dで示すように、進行方向を90°変更されずに直進し
て接続用線路導体30から漏れ出す成分が生じる。特
に、高周波信号は比誘電率の低い物質よりも比誘電率の
高い物質を伝搬し易いために、回路基板31と高周波基
板との間に存在する比誘電率が1の空気層よりも、比誘
電率9〜10程度と高いアルミナセラミックス等の誘電
体からなる回路基板31の誘電体基板29中に漏れ出し
てしまう。その結果、高周波信号の伝送特性が劣化する
という問題点を有していた。 【0010】また、上記の高周波基板の実装構造におい
ては、電気的に連絡されている第2の線路導体24と金
属端子32と接続用線路導体30とから構成される導電
体の集合体と、第1,第2の同一面接地導体23,25
との間の実効誘電率が大きく、そのため、寄生容量がこ
の導電体の集合体と第1,第2の同一面接地導体23,
25との間に発生し易かった。この寄生容量を小さくし
ないと電気回路の共振点が下がってしまい、高周波信号
の伝送特性が損なわれることがあった。 【0011】従って、本発明は上記従来の問題点に鑑み
完成されたものであり、その目的は、高周波信号が回路
基板から高周波基板へ伝搬される際に、高周波信号の漏
れが少なく、また伝送特性の劣化の少ない高周波基板の
実装構造を提供することにある。 【0012】 【課題を解決するための手段】本発明の高周波回路部品
搭載用基板の実装構造は、上面に高周波回路部品を搭載
する搭載部が形成された誘電体基板と、該誘電体基板の
上面に前記搭載部近傍から外周方向に形成された高周波
信号を伝送する第1の線路導体および該第1の線路導体
の両側に形成された第1の同一面接地導体と、前記誘電
体基板の下面に前記第1の線路導体の外周側の一端と対
向する部位から外周端部に向けて前記第1の線路導体と
平行に形成された前記高周波信号を伝送する第2の線路
導体および該第2の線路導体の両側に形成された第2の
同一面接地導体と、前記誘電体基板の内部に形成され、
前記第1および第2の線路導体の対向する端部同士を電
気的に接続する貫通導体ならびに前記第1および第2の
同一面接地導体を電気的に接続する接地貫通導体とを具
備する高周波回路部品搭載用基板を、上面に前記高周波
信号を伝送する接続用線路導体が形成された回路基板
に、前記第2の線路導体と前記接続用線路導体とを平行
に対向させて、間に一端を前記貫通導体から0.2〜
5.0mmの距離に位置させて前記誘電体基板の外周側
に配置した金属端子を挟むとともに前記接続用線路導体
を前記金属端子の途中から外周側に位置させて電気的に
接続したことを特徴とする。 【0013】本発明は、上記構成の高周波基板を、上面
に高周波信号を伝送する接続用線路導体が形成された回
路基板に、第2の線路導体と接続用線路導体とを平行に
対向させて、間に一端を貫通導体から0.2〜5.0m
mの距離に位置させて誘電体基板の外周側に配置した金
属端子を挟むとともに接続用線路導体を金属端子の途中
から外周側に位置させて電気的に接続したことから、高
周波信号が回路基板の接続用線路導体から金属端子を介
して高周波基板の第2の線路導体へ伝搬される際に、高
周波信号は、まず金属端子を介して第2の線路導体に伝
播され、その後第2の線路導体と貫通導体との接続部で
その進行方向を90°上側に変更されて貫通導体に伝播
されることとなる。 【0014】その結果、1〜40GHz程度の高周波帯
域において、高周波信号の一部が接続用線路導体から回
路基板の誘電体基体中に漏れ出すのを抑制でき、インピ
ーダンスのミスマッチングを最小限にすることが可能と
なる。また、高周波信号の一部が第2の線路導体を直進
して漏れ出そうとしても、高周波信号は回路基板と高周
波基板との間に存在する空気層よりも比誘電率が高い誘
電体からなり貫通導体の形成されている高周波基板側に
流れ込む。その結果、高周波信号が回路基板の誘電体基
板等へ大きく漏れ出すことはなく、高周波信号の伝送特
性が良好なものとなる。 【0015】また、接続用線路導体は回路基板の上面に
金属端子の途中から外周側にかけて位置するように形成
されていることから、電気的に連絡されている第2の線
路導体と金属端子と接続用線路導体とから構成される導
電体の集合体と、第1の同一面接地導体および第2の同
一面接地導体との間の実効誘電率を小さくすることがで
きる。よって、上記導電体の集合体と第1の同一面接地
導体および第2の同一面接地導体との間で発生する寄生
容量を小さくすることができる。この実効誘電率は、金
属端子の一端と貫通導体下端との間に比誘電率が1に近
い空気が存在していることによって小さくなっている。
その結果、共振周波数の低下を抑えることができ高周波
伝送特性の向上が実現できる。さらに、インピーダンス
のミスマッチングを小さくすることができ、極めて伝送
特性の劣化が小さい高周波基板の実装構造とすることが
できる。 【0016】 【発明の実施の形態】本発明の高周波基板の実装構造を
以下に詳細に説明する。図1,図2は、それぞれ本発明
の高周波基板の実装構造について実施の形態の一例を示
した要部断面図と、要部拡大断面図であり、図3,図4
はそれぞれ図1に示す高周波基板の上面図と下面図であ
る。また図5は、図1に示す実装構造の接続部の断面図
である。なお、図1および図5の例では、半導体パッケ
ージとしての高周波基板をマザーボード等の回路基板に
実装した場合の構造を示している。 【0017】これらの図において、1は誘電体基板、1
aはIC,LSI等の半導体素子Sが搭載される搭載
部、2は第1の線路導体、3は第1の同一面接地導体、4
は第2の線路導体、5は第2の同一面接地導体、6は貫
通導体、7は接地貫通導体であり、これらで半導体パッ
ケージが構成される。また、8は半導体素子Sと第1の
線路導体2とを接続するボンディングワイヤ等の導電性
接続部材である。9は誘電体基板、10は接続用線路導
体、10aは金属端子12の一端側の下面と誘電体基板
9との間の空隙部であり、これらで回路基板11が構成
されており、半導体パッケージの第2の線路導体4と回
路基板11の接続用線路導体10とを、間に金属端子1
2を挟んで接続することにより、半導体パッケージが回
路基板11に実装される。 【0018】本発明において、空隙部10aの高さは
0.01〜0.1mmが良い。0.01mm未満の場
合、寄生容量の発生を小さくすることができず、上記の
ような共振周波数の低下による不具合が発生し易くな
る。また、0.1mmを超えると、回路基板11上に接
続用線路導体10を形成するのが困難となる。より好ま
しくは0.01〜0.06mmがよい。 【0019】金属端子12の厚さは0.05〜0.8m
mが良く、0.05mm未満では、誘電体基板1と回路
基板11との隙間が小さくなり、高周波信号が漏れる可
能性がある。また0.8mmを超えると、金属端子12
の側面と、誘電体基板1の配線導体や回路基板11上の
配線導体との間で発生する寄生容量が大きくなってしま
い、共振周波数の低下による不具合が発生し易くなる。
なお、回路基板11の誘電体基板9の下面には下面側接
地導体13、上面には上面側接地導体17が形成され、
上面側接地導体17と第2の同一面接地導体5とを電気
的に接続している。 【0020】また、誘電体基板1の上面中央部に凹部A
を形成してその凹部Aの底面に搭載部1aを設けている
が、誘電体基板1を平板状としてその上面に搭載部1a
を形成しても良い。 【0021】本発明の誘電体基板1は、半導体素子Sを
支持するための支持体であり、酸化アルミニウム(Al
23)質焼結体,窒化アルミニウム(AlN)質焼結
体,ムライト(3Al23・2SiO2)質焼結体,炭
化珪素(SiC)質焼結体,窒化珪素(Si34)質焼
結体,ガラスセラミックス等の誘電体材料から成り、上
面中央部に半導体素子Sを収容するための凹部Aを有す
る略四角状等の平面視形状である。そして、凹部Aの底
面は半導体素子Sがロウ材,樹脂,ガラス等の接着剤を
介して収容固定される。 【0022】この誘電体基板1は、例えば酸化アルミニ
ウム質焼結体から成る場合、酸化アルミニウム,酸化珪
素,酸化カルシウム等の原料粉末に適当な有機バイン
ダ,溶剤,可塑剤,分散剤などを添加混合してスラリー
となし、これを従来周知のドクターブレード法等のシー
ト成形法でセラミックグリーンシートとなし、しかる
後、このセラミックグリーンシートに適当な打抜き加工
を施すとともに所定の順序で複数枚積層し、還元雰囲気
中約1600℃の温度で焼成することによって製作され
る。 【0023】誘電体基板1には、その上面に搭載部1a
近傍から外周方向にその途中まで幅が0.1〜1mm程
度の第1の線路導体2と、下面に第1の線路導体2の外
周側一端と対向する部位から外周端に向けて第1の線路
導体2と平行に幅が0.1〜1mm程度の第2の線路導
体4とが形成されている。また、誘電体基板1の内部に
は、第1の線路導体2と第2の線路導体4とを電気的に
接続する貫通導体6が形成されている。これらの第1,
第2の線路導体2,4および貫通導体6は、半導体素子
Sの各電極を外部電気回路に電気的に接続するための導
電路として機能する。なお、第1,第2の線路導体2,
4の幅は、伝播される高周波信号の周波数や半導体パッ
ケージの大きさにより設定される。 【0024】また、誘電体基板1には、上面に第1の線
路導体2の両側に第1の同一面接地導体3と、下面に第
2の線路導体4の両側に第2の同一面接地導体5とが形
成されている。誘電体基板1の内部には、図3に示すよ
うに第1の同一面接地導体3と第2の同一面接地導体5
とを電気的に接続する接地貫通導体7が形成されてい
る。第1の同一面接地導体3,第2の同一面接地導体5
は、第1の線路導体2とボンディングワイヤ等の導電性
接続部材8との不連続性を補償したり、第1の線路導体
2と第2の線路導体4との間のアイソレーションを向上
させる機能を有する。さらに、接地貫通導体7は、高イ
ンピーダンスの貫通導体6に対して容量成分を補うこと
ができ、貫通導体6におけるインピーダンスの不整合を
防ぐことが可能である。これらの結果、半導体素子Sと
回路基板11との間の電気的接続におけるインピーダン
スの不整合を効果的に抑えて、高周波信号の伝送特性の
劣化を抑えることができ、低反射損失の半導体パッケー
ジとすることができる。 【0025】なお、本実施の形態においては、第1の同
一面接地導体3および第2の同一面接地導体5は、第1
の線路導体2および第2の線路導体4をそれぞれ取り囲
むように連続して一体的に形成されており、より良好な
接地状態を得ることができるものとなっている。 【0026】本発明の第1,第2の線路導体2,4、貫
通導体6、第1,第2の同一面接地導体3,5および接
地貫通導体7は、タングステン(W),モリブデン(M
o),銅(Cu),銀(Ag)等のメタライズ導体等の
導電性材料から形成されている。例えばWメタライズか
ら成る場合、W粉末に適当な有機バインダ,溶剤を添加
混合して得たWペーストを、貫通導体6,接地貫通導体
7となる貫通孔をあらかじめ穿設した誘電体基板1とな
るセラミックグリーンシートに、従来周知のスクリーン
印刷法により所定のパターンに印刷塗布または充填し、
これをセラミックグリーンシートとともに焼成すること
によって、誘電体基板1の上面から下面にかけて所定の
パターンに被着形成される。 【0027】これらの第1,第2の線路導体2,4およ
び第1,第2の同一面接地導体3,5は、その露出する
表面にニッケル,金等の耐食性に優れかつロウ材やボン
ディングワイヤ等の接続部材との接合性に優れる金属を
メッキ法により1〜20μmの厚さに設けておくのがよ
い。その場合、第1,第2の線路導体2,4および第
1,第2の同一面接地導体3,5が酸化腐食するのを有
効に防止することができるとともに、第1,第2の線路
導体2,4および第1,第2の同一面接地導体3,5と
ボンディングワイヤや半田等との接続を強固かつ容易な
ものとなすことができる。 【0028】そして、搭載部1aに搭載した半導体素子
Sをボンディングワイヤ等の導電性接続部材8により第
1の線路導体2と電気的に接続し、搭載部1aの上方を
覆うように誘電体基板1上面の凹部Aの周囲に蓋体(図
示せず)を取着して半導体素子Sを気密に封止した後、
この半導体パッケージを、上面に高周波信号を伝送する
接続用線路導体10が形成された回路基板11上に、第
2の線路導体4と接続用線路導体10とを平行に対向さ
せて、間に一端を貫通導体6から0.2〜5.0mmの
距離に位置させて誘電体基板1の外周側に配置した金属
端子12を挟むとともに接続用線路導体10を金属端子
12の途中から外周側に位置させて電気的に接続するこ
とにより、半導体パッケージ内部の半導体素子Sと回路
基板11の外部電気回路とが電気的に接続される。 【0029】回路基板11は誘電体基板1と同様に例え
ば酸化アルミニウム質焼結体から成る場合、酸化アルミ
ニウム,酸化珪素,酸化カルシウム等の原料粉末に適当
な有機バインダ,溶剤,可塑剤,分散剤などを添加混合
してスラリーとなすとともに、これを従来周知のドクタ
ーブレード法等のシート成形法によってセラミックグリ
ーンシートとなし、しかる後、このセラミックグリーン
シートに適当な打抜き加工を施すとともにタングステン
などの高融点金属粉末からなる導体ペーストを印刷塗
布、充填し、所定の順序で複数枚積層し、還元雰囲気中
約1600℃の温度で焼成することによって製作され
る。 【0030】回路基板11には、その上面に接合される
誘電体基板1の外周部直下から回路基板11の外周端部
にかけて接続用線路導体10、および上面側接地導体1
7および下面側接地導体13が形成されている。接続用
線路導体10の幅は0.1〜1mm程度である。 【0031】また、金属端子12の一端側下面にある空
隙部10aの長さは、金属端子12が誘電体基板1の外
周端から突出している(露出している)長さの1/3程
度以上が好適である。1/3未満の場合、空隙部10a
を設けることによる高周波信号の伝送特性の向上効果等
が発現しにくくなる。さらには、空隙部10aの長さ
は、金属端子12が誘電体基板1の外周端から突出して
いる長さの1/2程度以上がより好ましい。さらに、空
隙部10aの長さは、金属端子12の一端から誘電体基
板1の外周端に至る長さ以下にすることが好ましい。そ
の長さを超えると、寄生容量の低減に効果がなくなり、
また誘電体基板1の接合の安定性が損なわれることとな
る。 【0032】この空隙部10aは、上記のようにして焼
成して形成された接続用線路導体10の一部を、従来周
知のサンドブラスト法でアルミナの粉末等を高速で吹き
付けて除去することによっても形成することができ、ま
た従来周知のエッチング法を用いることによっても形成
することができる。これらの方法によると空隙部10a
の長さを任意に調整することができ、たとえば他の要因
によってその長さを変更しなければならない場合にも最
適な長さで空隙部10aを設けることができる。 【0033】また、本発明においては、金属端子12を
一端が貫通導体6から0.2〜5mm離れた外周側に位
置し他端が接続用線路導体10上に接続されるように設
置する。金属端子12の一端と貫通導体6との距離が
0.2mm未満では、貫通導体6と金属端子12との距
離が短いため、金属端子12から第2の線路導体4への
高周波信号B(図1)の伝搬が不完全なものとなり易
く、高周波信号Bの一部が第2の線路導体4へ伝搬され
ずに直進して回路基板11の誘電体基体9へ漏れ出し易
くなる。また、金属端子12の一端と貫通導体6との距
離が5mmを超えると、金属端子12の一端と貫通導体
6との間の第2の線路導体4の距離が長くなりそのイン
ピーダンスが大きくなる。その結果、高周波信号Bの伝
送損失が増大し易くなる。 【0034】さらに、金属端子12の厚さは0.05〜
0.8mmであることが好ましい。0.05mm未満で
あると、誘電体基板1と回路基板11の隙間が極端に狭
いものとなり、高周波信号Bが第2の線路導体4から貫
通導体6へその進行方向を90°変更して伝搬される際
に誘電体基板1へ漏れ出した高周波信号が、誘電体基板
1と回路基板11の間の空気層を介して回路基板11へ
漏れ出し易くなる。0.8mmを超えると、図5に示す
ように、金属端子12の側面と誘電体基板1との間の容
量成分および金属端子12の側面と回路基板11の誘電
体基板9との間の容量成分が大きくなり、インピーダン
スのミスマッチングが発生し易くなる。 【0035】また金属端子12の幅は0.1〜1mm程
度であり、金属端子12と第2の線路導体4,接続用線
路導体10との接続性の観点から、第2の線路導体4,
接続用線路導体10の幅よりも狭いことが好ましい。 【0036】このような金属端子12は、鉄(Fe)−
ニッケル(Ni)−コバルト(Co)合金やFe−Ni
合金等の板材に打抜き加工やエッチング加工を施すこと
によって所定の形状に形成される。また、金属端子12
と第2の線路導体4および接続用線路導体10との接合
は以下のようにして行なわれる。まず、例えば金属端子
12を第2の線路導体4に間に銀(Ag)−銅(Cu)
ろう等の第1のロウ材を挟んで当接させるとともに、こ
れらを第1のロウ材の融点以上の温度に加熱することに
より金属端子12と第2の線路導体4とをロウ付けす
る。その後、第2の線路導体4に接合された金属端子1
2を、回路基板11の上面の接続用線路導体10に間に
第1のロウ材よりも融点の低いAg−Cuロウ等のロウ
材を挟んで当接し、これらを第2のロウ材の融点以上か
つ第1のロウ材の融点以下の温度に加熱することによ
り、金属端子12と第2の線路導体4および接続用線路
導体10とをロウ付けする。 【0037】また、金属端子12は、その表面にNi,
Au等の良導電性でかつ耐食性に優れた金属をメッキ法
により1〜20μmの厚さに被着させておくのがよく、
金属端子12の酸化腐食を有効に防止することができる
とともに、金属端子12と第2の線路導体4や接続用線
路導体10との電気的接続を良好となすことができる。 【0038】接続用線路導体10は、0.1〜1mm程
度の幅であり、W,Mo,Cu,Ag等のメタライズ導
体からなる導電性材料から形成されている。例えばWメ
タライズからなる場合、W粉末に適当な有機バインダ,
溶剤を添加混合して得たWペーストを、回路基板11の
誘電体基体9となるセラミックグリーンシートに従来周
知のスクリーン印刷法により所定のパターンに印刷塗布
し、これを誘電体基体9となるセラミックグリーンシー
トとともに焼成することによって、誘電体基体9の上面
から下面にかけて所定のパターンに被着形成される。 【0039】なお、本実施の形態では、図4に示すよう
に誘電体基板1下面の第2の接地導体層5として、接地
用端子14を一体的に形成した導電性基板15をロウ材
等の接着剤を介して接合することもできる。この導電性
基板15は、Fe−Ni−Co合金やFe−Ni合金等
の金属からなり、例えばFe−Ni−Co合金からなる
場合、このインゴット(塊)に圧延加工法や打抜き加工
法等の従来周知の金属加工法を施すことによって所定の
形状に形成される。さらに、同図のように誘電体基板1
下面に電源用接続端子16を取り付けることもできる。 【0040】かくして、本発明は、上下面にそれぞれ線
路導体が形成され、両線路導体間を接続する貫通導体を
有する半導体パッケージ等の高周波基板を、上面に接続
用線路導体が形成された回路基板に実装する際、高周波
信号のインピーダンスのミスマッチングや伝送特性が良
好な実装構造が可能となる。 【0041】なお、本発明は上述の実施の形態に限定さ
れるものではなく、本発明の要旨を逸脱しない範囲で種
々の変更が可能である。上述の実施の形態では、本発明
の高周波基板を半導体素子を収容する半導体パッケージ
に適用した場合について説明したが、これを混成集積回
路等に用いられる高周波基板にも適用できることは言う
までもない。また、上述の実施の形態では、金属端子1
2をFe−Ni−Co合金やFe−Ni合金等の金属固
体としているが、金属端子12が半田,ロウ材等から成
る場合にも本発明は適用可能である。 【0042】 【発明の効果】本発明は、上面に高周波回路部品を搭載
する搭載部が形成された誘電体基板と、誘電体基板の上
面に搭載部近傍から外周方向に形成された高周波信号を
伝送する第1の線路導体および第1の線路導体の両側に
形成された第1の同一面接地導体と、誘電体基板の下面
に第1の線路導体の外周側の一端と対向する部位から外
周端部に向けて第1の線路導体と平行に形成された高周
波信号を伝送する第2の線路導体および第2の線路導体
の両側に形成された第2の同一面接地導体と、誘電体基
板の内部に形成され、第1および第2の線路導体の対向
する端部同士を電気的に接続する貫通導体ならびに第1
および第2の同一面接地導体を電気的に接続する接地貫
通導体とを具備する高周波基板を、上面に高周波信号を
伝送する接続用線路導体が形成された回路基板に、第2
の線路導体と接続用線路導体とを平行に対向させて、間
に一端を貫通導体から0.2〜5.0mmの距離に位置
させて誘電体基板の外周側に配置した金属端子を挟むと
ともに接続用線路導体を金属端子の途中から外周側に位
置させて電気的に接続したことにより、高周波信号が回
路基板の接続用線路導体から金属端子を介して高周波基
板の第2の線路導体へ伝搬される際に、高周波信号は、
まず金属端子を介して第2の線路導体に伝播され、その
後第2の線路導体と貫通導体との接続部でその進行方向
を90°上側に変更されて貫通導体に伝播されることと
なる。その結果、1〜40GHz程度の高周波帯域にお
いて、高周波信号の一部が接続用線路導体から回路基板
の誘電体基体中に漏れ出すのを抑制でき、インピーダン
スのミスマッチングを最小限にし得る。また、高周波信
号の一部が第2の線路導体を直進して漏れ出そうとして
も、高周波信号は回路基板と高周波基板との間に存在す
る空気層よりも比誘電率が高い誘電体からなり貫通導体
の形成されている高周波基板側に流れ込む。その結果、
高周波信号が回路基板の誘電体基板等へ大きく漏れ出す
ことはなく、高周波信号の伝送特性が良好なものとな
る。 【0043】また、接続用線路導体は回路基板の上面に
金属端子の途中から外周側にかけて形成されていること
から、電気的に連絡されている第2の線路導体と金属端
子と接続用線路導体とから構成される導電体の集合体
と、第1の同一面接地導体および第2の同一面接地導体
との間の実効誘電率を小さくできる。よって、上記導電
体の集合体と第1の同一面接地導体および第2の同一面
接地導体との間で発生する寄生容量を小さくすることが
できる。この実効誘電率は、金属端子の一端と貫通導体
下端との間に比誘電率が1に近い空気が存在しているこ
とにより小さくなっている。その結果、共振周波数の低
下を抑えることができ高周波伝送特性が向上する。さら
に、インピーダンスのミスマッチングを小さくすること
ができ、極めて伝送特性の劣化が小さい高周波基板の実
装構造とすることができる。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention
It relates to the mounting structure of the mounting board, such as a microphone
Equipped with semiconductor element for high frequency from b-wave band to millimeter-wave band
For mounting high-frequency circuit component mounting boards to external devices
The present invention relates to a mounting structure suitable for the case. [0002] Conventionally, high frequency signals in the MHz band and the GHz band have been used.
For high frequency circuits or high frequencies such as wireless communication equipment using
-Frequency circuit with high-frequency circuit components such as semiconductor elements
For component mounting boards (hereinafter referred to as high-frequency boards)
Is a high-frequency circuit such as a semiconductor device mounted on a high-frequency substrate
The high frequency of the component and the circuit board on which the high frequency board is mounted
Circuit for electrical transmission of high-frequency signals.
Line conductor for transmitting high-frequency signals
Formed on each side and electrically connected to each other with through conductors
are doing. In addition, gold is used for the line conductor on the lower surface of the high-frequency substrate.
Metal terminals are attached to form an input / output section for high-frequency signals.
You. The metal terminals that serve as input / output sections for high-frequency signals are
The mounted high-frequency board is mounted on the circuit board and
Connect metal terminals attached to the lower surface of the circuit board to the circuit board
Electrical connection to the line conductor for
Will be used after being mounted on a circuit board. An example of such a high-frequency board mounting structure is
Then, for example, a mounting structure as shown in an enlarged sectional view of a main part in FIG.
There is structure. The figure shows a high-frequency substrate with a high-frequency semiconductor element.
A storage package (hereinafter referred to as a semiconductor package)
The case where it comprises is shown. In the semiconductor package shown in FIG.
A high-frequency semiconductor element S is mounted on the upper surface of the substrate 21.
The mounting portion 21a is formed and from the vicinity of the mounting portion 21a.
A first line conductor 22 is formed in the outer peripheral direction, and
A first same-plane ground conductor 23 is provided on both sides of the line conductor 22 of FIG.
Is formed. Further, on the lower surface of the dielectric substrate 21,
From a portion facing one end on the outer peripheral side of the first line conductor 22
A second line parallel to the first line conductor 22 toward the outer peripheral end
A conductor 24 is formed. On both sides of the second line conductor 24,
Two coplanar ground conductors 25 are formed. Also, the dielectric base
Inside the plate 21, a first line conductor 22 and a second line
Penetration for electrically connecting opposing ends of the road conductor 24
Conductor 26 and first coplanar ground conductor 23 and second
Ground through conductor electrically connecting the same plane ground conductor 25
(Not shown) are formed. The semiconductor element mounted on the mounting portion 21a
The child S is connected by a conductive connecting member 28 such as a bonding wire.
Electrically connected to the first line conductor 22, and the mounting portion 21a
A lid (not shown) is attached to the upper surface of the
After tightly sealing, this semiconductor package is
Upper surface of dielectric substrate 29 made of a dielectric material such as a mix
The circuit board 31 on which the connecting line conductor 30 is formed
2 line conductors 24 and connection line conductors 30 in parallel.
And electrically connect the metal terminals 32 between them.
I have. In this example, the lower surface of the dielectric substrate 29 is
Side ground conductor 33 and upper surface side ground conductor 34 formed on the upper surface
And the upper surface side ground conductor 34 and the second same surface ground conductor 25
Are electrically connected. According to such a semiconductor package,
Providing first and second coplanar ground conductors 23, 25
As a result, the first line conductor 22 and the bonding wire
To compensate for discontinuity with the conductive connecting member 28,
Improved isolation of the second line conductors 22 and 24
Can be made. In addition, the ground through conductor has high impedance.
It is possible to supplement the capacitance component to the through conductor 26 of the dance.
To prevent impedance mismatch in the through conductor 26.
Is possible. As a result, the semiconductor element S and the outside
Impedance in the electrical connection to the electrical circuit
Of the high-frequency signal transmission characteristics.
Semiconductor package with low reflection loss
It can be. In the above conventional high-frequency board mounting structure,
Is the shortest transmission line for high-frequency signals
In order to reduce the
One end of the metal terminal 32 overlaps the lower end of the through conductor 26 and is connected.
I have. A connection line for connecting the metal terminal 32
Is the conductor 30 positioned just below the through conductor 26 of the metal terminal 32?
From the outer peripheral side of the dielectric substrate. [0009] However, the above-mentioned problem is not solved.
End of a metal terminal 32 serving as an input / output unit for such a high-frequency signal
Of a high-frequency board that is connected to a through conductor 26
In the structure, the high-frequency signal C shown in FIG.
29 from the connecting line conductor 30 via the metal terminal 32.
When propagating to the second line conductor 24 of the frequency substrate,
The direction of travel of the tip of the child 32 overlapping the through conductor 26
Is changed upward by 90 ° and propagated to the through conductor 26.
However, the traveling direction of the high-frequency signal C is changed by 90 °.
When the signal is propagated, the part of the high-frequency signal C
As shown by D, go straight without changing the direction of travel by 90 °
As a result, components leaking from the connection line conductor 30 occur. Special
In addition, the high-frequency signal has a higher relative dielectric constant than a substance with a lower relative dielectric constant.
The circuit board 31 and the high-frequency
Than the air layer with a relative dielectric constant of 1 between
Dielectric such as alumina ceramics with high electric conductivity of about 9-10
Leaked into the dielectric substrate 29 of the circuit board 31 made of a body
Would. As a result, the transmission characteristics of the high-frequency signal deteriorate.
There was a problem that. Also, in the above-described mounting structure of the high-frequency substrate,
The second line conductor 24 and the gold
Conductive composed of the metal terminal 32 and the connection line conductor 30
And a first and second coplanar ground conductors 23, 25
Effective dielectric constant between the
And the first and second coplanar ground conductors 23,
And 25 easily. Reduce this parasitic capacitance
Otherwise, the resonance point of the electric circuit will drop,
Transmission characteristics were sometimes impaired. Accordingly, the present invention has been made in view of the above-mentioned conventional problems.
It is completed, and its purpose is to
Leakage of high-frequency signals when propagating from the substrate to the high-frequency substrate
Of high-frequency substrates with little deterioration of transmission characteristics
It is to provide a mounting structure. A high-frequency circuit component according to the present invention.
The mounting structure of the mounting board has high-frequency circuit components mounted on the top surface
A dielectric substrate on which a mounting portion to be formed is formed;
High-frequency waves formed on the upper surface from the vicinity of the mounting part toward the outer periphery
A first line conductor for transmitting a signal and the first line conductor
A first coplanar ground conductor formed on both sides of the
A pair of one end on the outer peripheral side of the first line conductor on the lower surface of the body substrate
The first line conductor from the part facing
A second line for transmitting the high-frequency signal formed in parallel
Conductor and second line conductors formed on both sides of the second line conductor.
A coplanar ground conductor, formed inside the dielectric substrate,
The opposite ends of the first and second line conductors are electrically connected to each other.
A through conductor for pneumatic connection and the first and second
And a ground through conductor for electrically connecting the same plane ground conductor.
The high frequency circuit component mounting board
Circuit board on which connection line conductors for transmitting signals are formed
The second line conductor and the connection line conductor are parallel to each other.
, One end between which is 0.2 to
The outer peripheral side of the dielectric substrate is located at a distance of 5.0 mm.
And the connecting line conductor sandwiching the metal terminal
Is positioned on the outer peripheral side from the middle of the metal terminal to electrically connect
Connected. According to the present invention, the high-frequency substrate having the above-described structure is mounted on an upper surface.
On which a connecting line conductor for transmitting high-frequency signals is formed
The second line conductor and the connecting line conductor are placed in parallel on the circuit board.
Opposite, one end between the conductor and 0.2-5.0m from the through conductor
m placed on the outer peripheral side of the dielectric substrate at a distance of m
And the connecting line conductor in the middle of the metal terminal.
From the outside and electrically connected,
Frequency signal from the line conductor for connection on the circuit board via the metal terminal
And propagated to the second line conductor of the high-frequency substrate,
The frequency signal is first transmitted to the second line conductor via the metal terminal.
And then at the connection between the second line conductor and the through conductor
The direction of travel is changed upward by 90 ° and propagates through conductors
Will be done. As a result, a high frequency band of about 1 to 40 GHz
Part of the high-frequency signal is
Can be suppressed from leaking into the dielectric substrate of the circuit board,
-It is possible to minimize dance mismatch
Become. Also, part of the high-frequency signal goes straight through the second line conductor.
High-frequency signal is not
With a higher dielectric constant than the air layer existing between
On the high-frequency substrate side, which is made of an electric conductor and has a through conductor
Flow in. As a result, the high-frequency signal is
It does not leak out to the board etc.
The properties are good. The connection line conductor is provided on the upper surface of the circuit board.
Formed so that it is located from the middle of the metal terminal to the outer periphery
The second line that is electrically connected
Conductor consisting of a track conductor, a metal terminal, and a connection line conductor.
An assembly of electrical conductors, a first co-planar ground conductor and a second
It is possible to reduce the effective dielectric constant between
Wear. Therefore, the above-mentioned conductor assembly and the first same-plane ground
Parasitic between the conductor and the second coplanar ground conductor
The capacity can be reduced. This effective permittivity is
The relative dielectric constant between one end of the metal terminal and the lower end of the through conductor is close to 1.
Small due to the presence of cool air.
As a result, lowering of the resonance frequency can be suppressed,
Transmission characteristics can be improved. Furthermore, impedance
Mismatch can be reduced and extremely transmission
A high-frequency board mounting structure with little deterioration in characteristics
it can. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The mounting structure of the high-frequency substrate of the present invention will be described.
This will be described in detail below. 1 and 2 show the present invention, respectively.
1 shows an example of an embodiment of a mounting structure of a high-frequency substrate.
FIGS. 3 and 4 are a main part sectional view and a main part enlarged sectional view, respectively.
Are top and bottom views of the high-frequency board shown in FIG. 1, respectively.
You. FIG. 5 is a sectional view of a connection portion of the mounting structure shown in FIG.
It is. In the examples of FIGS. 1 and 5, the semiconductor package is used.
High-frequency boards as circuit boards to circuit boards such as motherboards
This shows the structure when implemented. In these figures, reference numeral 1 denotes a dielectric substrate, 1
a is a mounting on which a semiconductor element S such as an IC or an LSI is mounted.
Part, 2 is a first line conductor, 3 is a first coplanar ground conductor, 4
Is a second line conductor, 5 is a second ground conductor, and 6 is a through conductor.
The conductor 7 is a ground through conductor, and these are semiconductor conductors.
A cage is configured. Reference numeral 8 denotes the semiconductor element S and the first
Conductivity of a bonding wire or the like connecting the line conductor 2
It is a connection member. 9 is a dielectric substrate, 10 is a connection line conductor.
And 10a are a lower surface of one end of the metal terminal 12 and a dielectric substrate.
9 and the circuit board 11 is composed of these.
And the second line conductor 4 of the semiconductor package.
The connection line conductor 10 of the circuit board 11 and the metal terminal 1
2 to connect the semiconductor package.
It is mounted on the road board 11. In the present invention, the height of the gap 10a is
0.01 to 0.1 mm is good. If less than 0.01mm
In this case, the occurrence of parasitic capacitance cannot be reduced,
Such a failure due to a decrease in the resonance frequency is likely to occur.
You. Also, if it exceeds 0.1 mm, the contact
It becomes difficult to form the connection line conductor 10. More preferred
Preferably, it is 0.01 to 0.06 mm. The thickness of the metal terminal 12 is 0.05 to 0.8 m
m is less than 0.05 mm, the dielectric substrate 1 and the circuit
The gap with the substrate 11 becomes smaller, and high frequency signals may leak.
There is a potential. Also, when the thickness exceeds 0.8 mm, the metal terminal 12
Side and the wiring conductors of the dielectric substrate 1 and the circuit board 11
The parasitic capacitance generated between the wiring conductors will increase.
In addition, problems due to a decrease in the resonance frequency are likely to occur.
The lower surface of the dielectric substrate 9 of the circuit board 11 is in contact with the lower surface.
A ground conductor 13 and an upper surface side ground conductor 17 are formed on the upper surface,
The upper ground conductor 17 and the second ground conductor 5 are electrically connected to each other.
Connected. A concave portion A is formed at the center of the upper surface of the dielectric substrate 1.
And the mounting portion 1a is provided on the bottom surface of the concave portion A.
Has a dielectric substrate 1 as a flat plate, and a mounting portion 1a
May be formed. The dielectric substrate 1 of the present invention includes a semiconductor element S
A support for supporting aluminum oxide (Al
Two O Three ) Sintered body, aluminum nitride (AlN) sintered body
Body, mullite (3Al Two O Three ・ 2SiO Two ) Quality sintered body, charcoal
Silicon nitride (SiC) sintered body, silicon nitride (Si Three N Four ) Quality grill
Made of dielectric material such as cement, glass ceramics, etc.
A concave portion A for accommodating the semiconductor element S is provided at the center of the surface.
In a plan view such as a substantially square shape. And the bottom of the recess A
On the surface, the semiconductor element S is made of an adhesive such as brazing material, resin, glass, etc.
It is housed and fixed through. The dielectric substrate 1 is made of, for example, aluminum oxide.
Aluminum oxide, silicon oxide
Organic binder suitable for raw material powders such as silicon oxide and calcium oxide
, Slurry by adding and mixing solvent, plasticizer, dispersant, etc.
This is replaced with a well-known method such as the doctor blade method.
With ceramic green sheet by molding method
After that, this ceramic green sheet is properly punched
And a plurality of sheets are laminated in a predetermined order, and a reducing atmosphere
Manufactured by firing at a temperature of about 1600 ° C
You. The mounting portion 1a is provided on the upper surface of the dielectric substrate 1.
Approximately 0.1 to 1 mm in width from the vicinity to the outer periphery
The first line conductor 2 and the lower surface of the first line conductor 2
A first line extending from a portion facing one end on the peripheral side to an outer peripheral end;
A second line conductor having a width of about 0.1 to 1 mm in parallel with the conductor 2
The body 4 is formed. Also, the inside of the dielectric substrate 1
Electrically connects the first line conductor 2 and the second line conductor 4 to each other.
A through conductor 6 to be connected is formed. These first,
The second line conductors 2 and 4 and the through conductor 6 are semiconductor elements.
For electrically connecting each electrode of S to an external electric circuit.
Functions as an electrical circuit. Note that the first and second line conductors 2
The width of 4 indicates the frequency of the high-frequency signal to be propagated or the semiconductor package.
Set by the size of the cage. The dielectric substrate 1 has a first line on its upper surface.
A first ground conductor 3 on the same plane on both sides of the
The second ground conductor 5 is formed on both sides of the second line conductor 4.
Has been established. The inside of the dielectric substrate 1 is as shown in FIG.
Thus, the first coplanar ground conductor 3 and the second coplanar ground conductor 5
And a ground through conductor 7 for electrically connecting
You. First coplanar ground conductor 3, second coplanar ground conductor 5
Is the conductive property of the first line conductor 2 and the bonding wire etc.
Compensation for discontinuity with the connecting member 8 or the first line conductor
Improved isolation between 2 and 2nd line conductor 4
It has a function to make Further, the ground through conductor 7 has a high
Compensating the capacitance component for the impedance through conductor 6
And the impedance mismatch in the through conductor 6 can be reduced.
It is possible to prevent. As a result, the semiconductor element S and
Impedance in electrical connection with circuit board 11
Of the transmission characteristics of high-frequency signals
Semiconductor package with low reflection loss that can suppress deterioration
Di. In the present embodiment, the first
The one-plane ground conductor 3 and the second same-plane ground conductor 5
Surrounding the second line conductor 4 and the second line conductor 4, respectively.
Is formed continuously and integrally so that
The grounding state can be obtained. The first and second line conductors 2 and 4 of the present invention
Conductor 6, first and second same-plane ground conductors 3, 5 and contact
The ground through conductor 7 is made of tungsten (W), molybdenum (M
o), copper (Cu), silver (Ag), etc.
It is formed from a conductive material. For example, W metallization
If appropriate, add appropriate organic binder and solvent to W powder
The W paste obtained by mixing is used as a through conductor 6, a ground through conductor.
7 is a dielectric substrate 1 in which a through hole is previously formed.
Ceramic green sheet with a well-known screen
Print coating or filling in a predetermined pattern by printing method,
Firing this together with the ceramic green sheet
From the upper surface to the lower surface of the dielectric substrate 1
It is formed on the pattern. These first and second line conductors 2, 4 and
And the first and second coplanar ground conductors 3, 5 are exposed.
Excellent corrosion resistance of nickel, gold, etc.
Metal that has excellent bonding with connecting members such as
It is better to have a thickness of 1-20 μm by plating method
No. In that case, the first and second line conductors 2 and 4 and the
The first ground conductors 3 and 5 are oxidized and corroded.
And the first and second lines
Conductors 2 and 4 and first and second same-plane ground conductors 3 and 5
Strong and easy connection with bonding wires and solder
Can be done. The semiconductor element mounted on the mounting portion 1a
S is connected to a conductive connection member 8 such as a bonding wire.
1 is electrically connected to the line conductor 2 and the upper part of the mounting portion 1a is
A cover body (see FIG.
(Not shown) to hermetically seal the semiconductor element S,
This semiconductor package transmits high frequency signals to the top surface
On the circuit board 11 on which the connection line conductor 10 is formed,
The two line conductors 4 and the connection line conductor 10 are opposed in parallel.
One end between the through conductor 6 and 0.2 to 5.0 mm
Metal disposed on the outer peripheral side of the dielectric substrate 1 at a distance
The terminal line 12 is sandwiched and the connection line conductor 10 is connected to a metal terminal.
12 and located on the outer circumference side for electrical connection.
And the semiconductor element S inside the semiconductor package and the circuit
An external electric circuit of the substrate 11 is electrically connected. The circuit board 11 is likened to the dielectric board 1
If it is made of aluminum oxide sintered body, aluminum oxide
Suitable for raw material powders such as, silicon oxide and calcium oxide
Organic binder, solvent, plasticizer, dispersant, etc.
To form a slurry,
-Ceramic grits by sheet forming method such as blade method.
And green sheet, and then this ceramic green
The sheet is properly punched and tungsten
Conductive paste made of high melting point metal powder such as
Cloth, filling, stacking multiple sheets in a predetermined order, in a reducing atmosphere
Manufactured by firing at a temperature of about 1600 ° C
You. The circuit board 11 is joined to the upper surface thereof
From just under the outer peripheral portion of the dielectric substrate 1 to the outer peripheral end portion of the circuit board 11
, The connecting line conductor 10 and the top-side ground conductor 1
7 and the lower surface side ground conductor 13 are formed. For connection
The width of the line conductor 10 is about 0.1 to 1 mm. The empty space on the lower surface on one end side of the metal terminal 12
The length of the gap 10 a is such that the metal terminal 12 is outside the dielectric substrate 1.
About 1/3 of the length protruding (exposed) from the peripheral end
A degree or higher is preferred. If less than 1/3, the gap 10a
To improve the transmission characteristics of high-frequency signals by providing
Is difficult to develop. Furthermore, the length of the gap 10a
Means that the metal terminals 12 project from the outer peripheral end of the dielectric substrate 1
It is more preferable that the length is about 1/2 or more of the existing length. Furthermore, the sky
The length of the gap 10a is determined from one end of the metal terminal 12 to the dielectric base.
It is preferable that the length be equal to or less than the length reaching the outer peripheral end of the plate 1. So
Exceeding the length will have no effect on reducing parasitic capacitance,
In addition, the stability of bonding of the dielectric substrate 1 is impaired.
You. The gap 10a is fired as described above.
A part of the connecting line conductor 10 thus formed is
Alumina powder etc. is blown at high speed by the well-known sandblasting method.
Can also be formed by attaching and removing
Also formed by using a conventionally known etching method
can do. According to these methods, the gap 10a
Length can be adjusted arbitrarily, including other factors
Also if the length must be changed
The gap 10a can be provided with an appropriate length. In the present invention, the metal terminal 12 is
One end is located on the outer peripheral side at a distance of 0.2 to 5 mm from the through conductor 6.
So that the other end is connected to the connecting line conductor 10.
Place. The distance between one end of the metal terminal 12 and the through conductor 6 is
If it is less than 0.2 mm, the distance between the through conductor 6 and the metal terminal 12 will be small.
Since the separation is short, the distance from the metal terminal 12 to the second line conductor 4 is small.
The propagation of the high-frequency signal B (FIG. 1) is likely to be incomplete.
A part of the high-frequency signal B is propagated to the second line conductor 4.
Leaks straight into the dielectric substrate 9 of the circuit board 11
It becomes. Further, the distance between one end of the metal terminal 12 and the through conductor 6 is set.
If the separation exceeds 5 mm, one end of the metal terminal 12 and the through conductor
6, the distance of the second line conductor 4 becomes longer,
Peedance increases. As a result, the transmission of the high-frequency signal B
Transmission loss tends to increase. Further, the thickness of the metal terminal 12 is 0.05 to
It is preferably 0.8 mm. Less than 0.05mm
If there is, the gap between the dielectric substrate 1 and the circuit board 11 is extremely narrow.
High frequency signal B passes through the second line conductor 4
When propagating to the conductor 6 with its traveling direction changed by 90 °
The high-frequency signal leaked to the dielectric substrate 1
1 to the circuit board 11 via the air layer between the circuit board 11
It is easy to leak. When it exceeds 0.8 mm, it is shown in FIG.
Thus, the capacitance between the side surface of the metal terminal 12 and the dielectric substrate 1
Quantitative component and dielectric of side surface of metal terminal 12 and circuit board 11
The capacitance component between itself and the body substrate 9 increases,
Mismatch easily occurs. The width of the metal terminal 12 is about 0.1 to 1 mm.
Degree, the metal terminal 12 and the second line conductor 4, the connection line
From the viewpoint of connectivity with the road conductor 10, the second line conductor 4,
It is preferable that the width is smaller than the width of the connection line conductor 10. The metal terminal 12 is made of iron (Fe)-
Nickel (Ni) -cobalt (Co) alloy or Fe-Ni
Punching and etching of plate materials such as alloys
Is formed into a predetermined shape. In addition, the metal terminal 12
Between the second line conductor 4 and the connection line conductor 10
Is performed as follows. First, for example, metal terminals
12 between the second line conductor 4 and silver (Ag) -copper (Cu)
The first brazing material, such as wax, is sandwiched and abutted.
Heating them to a temperature above the melting point of the first brazing material.
The metal terminal 12 and the second line conductor 4 are brazed.
You. Thereafter, the metal terminal 1 bonded to the second line conductor 4
2 between the connecting line conductor 10 on the upper surface of the circuit board 11.
A brazing material such as Ag-Cu brazing material having a lower melting point than the first brazing material.
Abutting the brazing material, and make sure that these
By heating to a temperature below the melting point of the first brazing material.
The metal terminal 12, the second line conductor 4, and the connection line
The conductor 10 is brazed. The metal terminal 12 has Ni,
Plating method for metal such as Au which has good conductivity and excellent corrosion resistance
Should be applied to a thickness of 1 to 20 μm,
Oxidative corrosion of the metal terminal 12 can be effectively prevented.
In addition, the metal terminal 12 and the second line conductor 4 or the connecting wire
Good electrical connection with the road conductor 10 can be achieved. The connecting line conductor 10 is about 0.1 to 1 mm.
It is a range of degrees, and metallization of W, Mo, Cu, Ag etc.
It is formed from a conductive material made of a body. For example, W
If it is made of tarized, suitable organic binder for W powder,
The W paste obtained by adding and mixing the solvent is
Conventionally, a ceramic green sheet serving as a dielectric substrate 9 is
Print and apply in a predetermined pattern by a well-known screen printing method
Then, a ceramic green sheet serving as a dielectric substrate 9 is formed.
By firing together with the upper surface of the dielectric substrate 9,
From the lower surface to the lower surface. In this embodiment, as shown in FIG.
The second ground conductor layer 5 on the lower surface of the dielectric substrate 1
The conductive substrate 15 on which the terminals 14 are integrally formed is made of a brazing material.
Can also be joined via an adhesive such as This conductivity
The substrate 15 is made of an Fe—Ni—Co alloy, an Fe—Ni alloy, or the like.
Of, for example, an Fe-Ni-Co alloy
If this ingot (mass) is rolled or stamped
Method by applying a well-known metalworking method such as
It is formed into a shape. Further, as shown in FIG.
The power supply connection terminal 16 can be attached to the lower surface. Thus, according to the present invention, the upper and lower surfaces
Path conductor is formed, and a through conductor connecting between the two line conductors is formed.
High frequency substrate such as semiconductor package that has
When mounting on a circuit board with line conductors for
Good signal impedance mismatch and good transmission characteristics
A favorable mounting structure is possible. The present invention is limited to the above-described embodiment.
It is not intended to depart from the spirit and scope of the present invention.
Various changes are possible. In the above embodiment, the present invention
Semiconductor package containing semiconductor element with high frequency substrate
Was explained in the case of application to
It can be applied to high frequency substrates used for roads etc.
Not even. In the above-described embodiment, the metal terminal 1
2 is a metal solid such as an Fe-Ni-Co alloy or an Fe-Ni alloy.
The metal terminals 12 are made of solder, brazing material, etc.
The present invention can be applied to such cases. According to the present invention, a high frequency circuit component is mounted on the upper surface.
Substrate on which the mounting part to be formed is formed, and on the dielectric substrate
A high-frequency signal formed on the surface from the vicinity of the
A first line conductor for transmission and on both sides of the first line conductor
The formed first coplanar ground conductor and the lower surface of the dielectric substrate
From the portion facing the outer circumferential end of the first line conductor.
High circumference formed parallel to the first line conductor toward the peripheral end
Second line conductor for transmitting a wave signal and second line conductor
A second ground conductor formed on both sides of the
Opposing the first and second line conductors formed inside the plate
Through conductor for electrically connecting the ends of
And a ground conductor for electrically connecting the second coplanar ground conductor.
A high-frequency substrate with a conductor and a high-frequency signal
The circuit board on which the connecting line conductor for transmission is formed is provided with a second
Line conductor and connection line conductor
One end at a distance of 0.2 to 5.0 mm from the through conductor
And sandwich the metal terminals arranged on the outer peripheral side of the dielectric substrate
In both cases, place the line conductor for connection from the middle of the metal terminal to the outer peripheral side.
High frequency signal
From the line conductor for connection on the circuit board via the metal terminal
When propagated to the second line conductor of the plate, the high frequency signal
First, it is propagated to the second line conductor via the metal terminal,
The direction of travel at the connection between the second line conductor and the through conductor
Is changed upward by 90 ° and propagated to the through conductor.
Become. As a result, in the high frequency band of about 1 to 40 GHz
Part of the high-frequency signal from the connection line conductor to the circuit board
Can be suppressed from leaking into the dielectric substrate of
Mismatching can be minimized. In addition, high-frequency signals
A part of the signal goes straight through the second line conductor and tries to leak
High-frequency signals exist between the circuit board and the high-frequency board.
Through conductor made of a dielectric material with a higher dielectric constant than the air layer
Flows into the high-frequency substrate side where is formed. as a result,
High frequency signal leaks out to dielectric board of circuit board etc.
And the transmission characteristics of high-frequency signals are good.
You. The connection line conductor is provided on the upper surface of the circuit board.
Being formed from the middle of the metal terminal to the outer periphery
From the second line conductor and the metal end which are electrically connected
Of conductors composed of conductors and connecting line conductors
And a first coplanar ground conductor and a second coplanar ground conductor
And the effective dielectric constant between them can be reduced. Therefore, the conductive
A body assembly, a first coplanar ground conductor and a second coplanar surface
It is possible to reduce the parasitic capacitance generated with the ground conductor.
it can. This effective permittivity is determined by the
Make sure that air with a relative dielectric constant close to 1 exists between
And smaller. As a result, low resonance frequency
Lowering can be suppressed, and high-frequency transmission characteristics are improved. Further
To reduce the impedance mismatch
Of high-frequency substrates with extremely small degradation of transmission characteristics
Mounting structure.

【図面の簡単な説明】 【図1】本発明の高周波基板の実装構造について実施の
形態の例を示し、半導体パッケージとしての高周波基板
を外部の回路基板に実装した実装構造を示す要部断面図
である。 【図2】図1の要部拡大断面図である。 【図3】図1の高周波基板の上面図である。 【図4】図1の高周波基板の下面図である。 【図5】図1の実装構造における金属端子の接続部の断
面図である。 【図6】従来の高周波基板の外部の回路基板への実装構
造を示す要部断面図である。 【符号の説明】 1:誘電体基板 1a:搭載部 2:第1の線路導体 3:第1の同一面接地導体 4:第2の線路導体 5:第2の同一面接地導体 6:貫通導体 7:接地貫通導体 9:誘電体基体 10:接続用線路導体 10a:空隙部 11:回路基板 12:金属端子 S:半導体素子
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an example of an embodiment of a mounting structure of a high-frequency board according to the present invention, and is a cross-sectional view of a main part showing a mounting structure in which a high-frequency board as a semiconductor package is mounted on an external circuit board. It is. FIG. 2 is an enlarged sectional view of a main part of FIG. FIG. 3 is a top view of the high-frequency substrate of FIG. 1; FIG. 4 is a bottom view of the high-frequency substrate of FIG. 1; FIG. 5 is a sectional view of a connection portion of a metal terminal in the mounting structure of FIG. 1; FIG. 6 is a cross-sectional view of a main part showing a structure for mounting a conventional high-frequency board on an external circuit board. [Description of Signs] 1: Dielectric substrate 1a: Mounting section 2: First line conductor 3: First same plane ground conductor 4: Second line conductor 5: Second same plane ground conductor 6: Through conductor 7: ground through conductor 9: dielectric substrate 10: connection line conductor 10a: gap 11: circuit board 12: metal terminal S: semiconductor element

Claims (1)

【特許請求の範囲】 【請求項1】 上面に高周波回路部品を搭載する搭載部
が形成された誘電体基板と、該誘電体基板の上面に前記
搭載部近傍から外周方向に形成された高周波信号を伝送
する第1の線路導体および該第1の線路導体の両側に形
成された第1の同一面接地導体と、前記誘電体基板の下
面に前記第1の線路導体の外周側の一端と対向する部位
から外周端部に向けて前記第1の線路導体と平行に形成
された前記高周波信号を伝送する第2の線路導体および
該第2の線路導体の両側に形成された第2の同一面接地
導体と、前記誘電体基板の内部に形成され、前記第1お
よび第2の線路導体の対向する端部同士を電気的に接続
する貫通導体ならびに前記第1および第2の同一面接地
導体を電気的に接続する接地貫通導体とを具備する高周
波回路部品搭載用基板を、上面に前記高周波信号を伝送
する接続用線路導体が形成された回路基板に、前記第2
の線路導体と前記接続用線路導体とを平行に対向させ
て、間に一端を前記貫通導体から0.2〜5.0mmの
距離に位置させて前記誘電体基板の外周側に配置した金
属端子を挟むとともに前記接続用線路導体を前記金属端
子の途中から外周側に位置させて電気的に接続したこと
を特徴とする高周波回路部品搭載用基板の実装構造。
Claims: 1. A dielectric substrate having an upper surface on which a mounting portion for mounting a high-frequency circuit component is formed, and a high-frequency signal formed on the upper surface of the dielectric substrate from the vicinity of the mounting portion to an outer peripheral direction. And a first ground conductor formed on both sides of the first line conductor transmitting the first line conductor, and a lower end of the dielectric substrate opposed to one end on the outer peripheral side of the first line conductor. A second line conductor for transmitting the high-frequency signal formed in parallel with the first line conductor from a portion to be formed toward an outer peripheral end portion, and second same face contact formed on both sides of the second line conductor A ground conductor, a through conductor formed inside the dielectric substrate and electrically connecting opposing ends of the first and second line conductors, and the first and second same-plane ground conductors. Having a ground through conductor for electrical connection The filter circuit component mounting board, the circuit board connecting line conductor is formed to transmit a high-frequency signal to the upper surface, the second
Metal terminal arranged on the outer peripheral side of the dielectric substrate with the line conductor of the above and the connection line conductor facing each other in parallel, with one end located at a distance of 0.2 to 5.0 mm from the through conductor. And mounting the high-frequency circuit component mounting substrate, wherein the connection line conductor is positioned on the outer periphery side of the metal terminal and electrically connected.
JP2001197242A 2001-06-28 2001-06-28 Mounting structure of high-frequency circuit component mounting board Pending JP2003017827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001197242A JP2003017827A (en) 2001-06-28 2001-06-28 Mounting structure of high-frequency circuit component mounting board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001197242A JP2003017827A (en) 2001-06-28 2001-06-28 Mounting structure of high-frequency circuit component mounting board

Publications (1)

Publication Number Publication Date
JP2003017827A true JP2003017827A (en) 2003-01-17

Family

ID=19034878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001197242A Pending JP2003017827A (en) 2001-06-28 2001-06-28 Mounting structure of high-frequency circuit component mounting board

Country Status (1)

Country Link
JP (1) JP2003017827A (en)

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