JP2002523908A - 半導体基板にエピタキシャル層を形成する低温プロセス - Google Patents

半導体基板にエピタキシャル層を形成する低温プロセス

Info

Publication number
JP2002523908A
JP2002523908A JP2000567765A JP2000567765A JP2002523908A JP 2002523908 A JP2002523908 A JP 2002523908A JP 2000567765 A JP2000567765 A JP 2000567765A JP 2000567765 A JP2000567765 A JP 2000567765A JP 2002523908 A JP2002523908 A JP 2002523908A
Authority
JP
Japan
Prior art keywords
temperature
value
processing chamber
output
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000567765A
Other languages
English (en)
Japanese (ja)
Inventor
ゲオルク・エム・リッター
ベルント・ティラック
トーマス・モルゲンスターン
ディルク・ヴォランスキー
ポール・アール・マクヒュー
ケビン・ストダード
コンスタンティノス・ツァカリス
Original Assignee
セミトゥール・インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セミトゥール・インコーポレイテッド filed Critical セミトゥール・インコーポレイテッド
Publication of JP2002523908A publication Critical patent/JP2002523908A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000567765A 1998-08-26 1999-08-26 半導体基板にエピタキシャル層を形成する低温プロセス Pending JP2002523908A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9805798P 1998-08-26 1998-08-26
US60/098,057 1998-08-26
PCT/US1999/019684 WO2000012785A1 (fr) 1998-08-26 1999-08-26 Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur

Publications (1)

Publication Number Publication Date
JP2002523908A true JP2002523908A (ja) 2002-07-30

Family

ID=22266670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000567765A Pending JP2002523908A (ja) 1998-08-26 1999-08-26 半導体基板にエピタキシャル層を形成する低温プロセス

Country Status (3)

Country Link
EP (1) EP1114210A4 (fr)
JP (1) JP2002523908A (fr)
WO (1) WO2000012785A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537855A (ja) 2001-07-27 2004-12-16 イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス／インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク 薄いエピタキシャル半導体層の製造方法および装置
DE10335460B4 (de) * 2003-08-02 2008-02-28 Infineon Technologies Ag Verfahren zum Betreiben einer CVD-Anlage
CN100418247C (zh) * 2003-11-07 2008-09-10 崇越科技股份有限公司 多腔体分离外延层有机金属化学气相外延装置及方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738618A (en) * 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
US5168089A (en) * 1989-11-27 1992-12-01 At&T Bell Laboratories Substantially facet-free selective epitaxial growth process
US5273621A (en) * 1989-11-27 1993-12-28 At&T Bell Laboratories Substantially facet-free selective epitaxial growth process
US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
US5498578A (en) * 1994-05-02 1996-03-12 Motorola, Inc. Method for selectively forming semiconductor regions
WO1996015550A1 (fr) * 1994-11-10 1996-05-23 Lawrence Semiconductor Research Laboratory, Inc. Compositions silicium-germanium-carbone et processus associes
JP2950272B2 (ja) * 1997-01-24 1999-09-20 日本電気株式会社 半導体薄膜の製造方法
US5895596A (en) * 1997-01-27 1999-04-20 Semitool Thermal Model based temperature controller for semiconductor thermal processors

Also Published As

Publication number Publication date
EP1114210A4 (fr) 2003-04-16
WO2000012785A1 (fr) 2000-03-09
EP1114210A1 (fr) 2001-07-11

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