JP2002503871A - 面積の大きい無音放電励起ラジエータ - Google Patents
面積の大きい無音放電励起ラジエータInfo
- Publication number
- JP2002503871A JP2002503871A JP2000531860A JP2000531860A JP2002503871A JP 2002503871 A JP2002503871 A JP 2002503871A JP 2000531860 A JP2000531860 A JP 2000531860A JP 2000531860 A JP2000531860 A JP 2000531860A JP 2002503871 A JP2002503871 A JP 2002503871A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- electrode
- radiator
- electrodes
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005284 excitation Effects 0.000 title description 2
- 230000005855 radiation Effects 0.000 claims abstract description 81
- 238000001816 cooling Methods 0.000 claims abstract description 44
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 239000003989 dielectric material Substances 0.000 claims description 41
- 238000012546 transfer Methods 0.000 claims description 25
- 239000002826 coolant Substances 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 239000012809 cooling fluid Substances 0.000 claims description 10
- 238000011109 contamination Methods 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 6
- 229920004449 Halon® Polymers 0.000 claims description 6
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 12
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 6
- 239000000470 constituent Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 39
- 238000000151 deposition Methods 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 238000000427 thin-film deposition Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 81
- 239000000463 material Substances 0.000 description 52
- 239000010408 film Substances 0.000 description 31
- 239000003507 refrigerant Substances 0.000 description 19
- 239000000356 contaminant Substances 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000010453 quartz Substances 0.000 description 14
- 238000013461 design Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 12
- 210000003632 microfilament Anatomy 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 230000005670 electromagnetic radiation Effects 0.000 description 10
- 238000007373 indentation Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 102000002151 Microfilament Proteins Human genes 0.000 description 9
- 108010040897 Microfilament Proteins Proteins 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 150000002334 glycols Chemical class 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000012048 reactive intermediate Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 241000183290 Scleropages leichardti Species 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 235000003205 Smilax rotundifolia Nutrition 0.000 description 1
- 240000009022 Smilax rotundifolia Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical group [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
- H01J61/06—Main electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
- H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
- H01J61/06—Main electrodes
- H01J61/067—Main electrodes for low-pressure discharge lamps
- H01J61/0672—Main electrodes for low-pressure discharge lamps characterised by the construction of the electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/24—Means for obtaining or maintaining the desired pressure within the vessel
- H01J61/26—Means for absorbing or adsorbing gas, e.g. by gettering; Means for preventing blackening of the envelope
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/30—Vessels; Containers
- H01J61/305—Flat vessels or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/52—Cooling arrangements; Heating arrangements; Means for circulating gas or vapour within the discharge space
- H01J61/523—Heating or cooling particular parts of the lamp
- H01J61/526—Heating or cooling particular parts of the lamp heating or cooling of electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2437—Multilayer systems
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/022,507 | 1998-02-12 | ||
| US09/022,507 US6049086A (en) | 1998-02-12 | 1998-02-12 | Large area silent discharge excitation radiator |
| PCT/US1999/002948 WO1999041767A1 (en) | 1998-02-12 | 1999-02-10 | Large area silent discharge excitation radiator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002503871A true JP2002503871A (ja) | 2002-02-05 |
| JP2002503871A5 JP2002503871A5 (enExample) | 2006-03-30 |
Family
ID=21809943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000531860A Pending JP2002503871A (ja) | 1998-02-12 | 1999-02-10 | 面積の大きい無音放電励起ラジエータ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6049086A (enExample) |
| EP (1) | EP1055251A4 (enExample) |
| JP (1) | JP2002503871A (enExample) |
| KR (1) | KR100647883B1 (enExample) |
| AU (1) | AU2762799A (enExample) |
| WO (1) | WO1999041767A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006134705A (ja) * | 2004-11-05 | 2006-05-25 | Harison Toshiba Lighting Corp | 誘電体バリア放電ランプを用いた光照射装置 |
| JP2017004930A (ja) * | 2015-06-05 | 2017-01-05 | パナソニックＩｐマネジメント株式会社 | プラズマ生成装置 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787787B1 (en) * | 1998-01-23 | 2004-09-07 | Ushiodenki Kabushiki Kaisha | Ultraviolet radiation producing apparatus |
| DE19919363A1 (de) * | 1999-04-28 | 2000-11-09 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Entladungslampe mit Abstandshalter |
| DE19955108A1 (de) * | 1999-11-16 | 2001-05-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Entladungslampe mit verbesserter Temperaturhomogenität |
| DE10005156A1 (de) * | 2000-02-07 | 2001-08-09 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Flache Gasentladungslampe mit Abstandselementen |
| JP4095758B2 (ja) * | 2000-06-29 | 2008-06-04 | 株式会社荏原製作所 | オゾン発生装置 |
| US20020067130A1 (en) * | 2000-12-05 | 2002-06-06 | Zoran Falkenstein | Flat-panel, large-area, dielectric barrier discharge-driven V(UV) light source |
| US6597003B2 (en) * | 2001-07-12 | 2003-07-22 | Axcelis Technologies, Inc. | Tunable radiation source providing a VUV wavelength planar illumination pattern for processing semiconductor wafers |
| US6646256B2 (en) * | 2001-12-18 | 2003-11-11 | Agilent Technologies, Inc. | Atmospheric pressure photoionization source in mass spectrometry |
| US20030157000A1 (en) * | 2002-02-15 | 2003-08-21 | Kimberly-Clark Worldwide, Inc. | Fluidized bed activated by excimer plasma and materials produced therefrom |
| KR20030075472A (ko) * | 2002-03-19 | 2003-09-26 | 현대자동차주식회사 | 플라즈마 반응기 및 그 제조방법과 플라즈마 반응기가채용된 차량의 배기가스 저감장치 |
| US7380756B1 (en) | 2003-11-17 | 2008-06-03 | The United States Of America As Represented By The Secretary Of The Air Force | Single dielectric barrier aerodynamic plasma actuation |
| US20070119828A1 (en) * | 2003-12-08 | 2007-05-31 | Ngk Insulators , Ltd. | Plasma generating electrode, its manufacturing method, and plasma reactor |
| FR2864746B1 (fr) * | 2003-12-29 | 2006-05-19 | Brandt Ind | Electrode pour la generation de plasma de decharge a barriere dielectrique |
| KR100595052B1 (ko) | 2004-04-22 | 2006-06-30 | 옥도영 | 액정디스플레이의 백라이트 |
| US20060006804A1 (en) * | 2004-07-06 | 2006-01-12 | Lajos Reich | Dielectric barrier discharge lamp |
| KR100605261B1 (ko) * | 2004-08-10 | 2006-07-28 | 삼성전자주식회사 | 면광원유닛 및 이를 가지는 액정표시장치 |
| KR100639876B1 (ko) * | 2004-09-21 | 2006-10-30 | 미래산업 주식회사 | 평판형 형광램프의 가스 주입구 구조 및 평판형형광램프의 가스 주입구 성형 방법 |
| US20090039757A1 (en) * | 2005-04-22 | 2009-02-12 | Hiroyoshi Ohshima | Excimer Lamp |
| FR2889886A1 (fr) * | 2005-08-19 | 2007-02-23 | Saint Gobain | Lampe uv plane a decharge coplanaire et utilisations |
| US7495396B2 (en) | 2005-12-14 | 2009-02-24 | General Electric Company | Dielectric barrier discharge lamp |
| JP2007234437A (ja) * | 2006-03-02 | 2007-09-13 | Trinc:Kk | プラズマ放電式除電器 |
| KR100820370B1 (ko) * | 2007-05-02 | 2008-04-08 | (주)엠아이에프피디 | 대향 전극 구조를 갖는 면광원 장치 및 그 제조 방법 |
| WO2009076535A1 (en) * | 2007-12-13 | 2009-06-18 | Academia Sinica | System and method for performing charge-monitoring mass spectrometry |
| CN103250470A (zh) * | 2010-12-09 | 2013-08-14 | 韩国科学技术院 | 等离子体发生器 |
| DE102011000261A1 (de) * | 2011-01-21 | 2012-07-26 | Hochschule für angewandte Wissenschaft und Kunst Fachhochschule Hildesheim/Holzminden/Göttingen | Dielektrische Koplanarentladungsquelle für eine Oberflächenbehandlung unter Atmosphärendruck |
| US9220162B2 (en) * | 2011-03-09 | 2015-12-22 | Samsung Electronics Co., Ltd. | Plasma generating apparatus and plasma generating method |
| KR101241049B1 (ko) | 2011-08-01 | 2013-03-15 | 주식회사 플라즈마트 | 플라즈마 발생 장치 및 플라즈마 발생 방법 |
| KR101246191B1 (ko) | 2011-10-13 | 2013-03-21 | 주식회사 윈텔 | 플라즈마 장치 및 기판 처리 장치 |
| DE102013103670A1 (de) * | 2013-04-11 | 2014-10-30 | Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg | HF-Lampe mit dielektrischem Wellenleiter |
| EP3648145B1 (en) * | 2018-11-05 | 2022-01-05 | Xylem Europe GmbH | Vacuum ultraviolet excimer lamp with an inner axially symmetric wire electrode |
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- 1999-02-10 WO PCT/US1999/002948 patent/WO1999041767A1/en not_active Ceased
- 1999-02-10 JP JP2000531860A patent/JP2002503871A/ja active Pending
- 1999-02-10 AU AU27627/99A patent/AU2762799A/en not_active Abandoned
- 1999-02-10 KR KR1020007008882A patent/KR100647883B1/ko not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006134705A (ja) * | 2004-11-05 | 2006-05-25 | Harison Toshiba Lighting Corp | 誘電体バリア放電ランプを用いた光照射装置 |
| JP2017004930A (ja) * | 2015-06-05 | 2017-01-05 | パナソニックＩｐマネジメント株式会社 | プラズマ生成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010040954A (ko) | 2001-05-15 |
| WO1999041767A1 (en) | 1999-08-19 |
| KR100647883B1 (ko) | 2006-12-13 |
| EP1055251A1 (en) | 2000-11-29 |
| US6049086A (en) | 2000-04-11 |
| AU2762799A (en) | 1999-08-30 |
| EP1055251A4 (en) | 2005-02-16 |
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