JP2002373858A5 - - Google Patents

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Publication number
JP2002373858A5
JP2002373858A5 JP2002104391A JP2002104391A JP2002373858A5 JP 2002373858 A5 JP2002373858 A5 JP 2002373858A5 JP 2002104391 A JP2002104391 A JP 2002104391A JP 2002104391 A JP2002104391 A JP 2002104391A JP 2002373858 A5 JP2002373858 A5 JP 2002373858A5
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JP
Japan
Prior art keywords
temperature
insulating film
film
forming
manufacturing
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Application number
JP2002104391A
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English (en)
Japanese (ja)
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JP2002373858A (ja
JP4302357B2 (ja
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Priority to JP2002104391A priority Critical patent/JP4302357B2/ja
Priority claimed from JP2002104391A external-priority patent/JP4302357B2/ja
Publication of JP2002373858A publication Critical patent/JP2002373858A/ja
Publication of JP2002373858A5 publication Critical patent/JP2002373858A5/ja
Application granted granted Critical
Publication of JP4302357B2 publication Critical patent/JP4302357B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002104391A 2001-04-06 2002-04-05 半導体装置の作製方法 Expired - Fee Related JP4302357B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002104391A JP4302357B2 (ja) 2001-04-06 2002-04-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001109295 2001-04-06
JP2001-109295 2001-04-06
JP2002104391A JP4302357B2 (ja) 2001-04-06 2002-04-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002373858A JP2002373858A (ja) 2002-12-26
JP2002373858A5 true JP2002373858A5 (enExample) 2005-09-15
JP4302357B2 JP4302357B2 (ja) 2009-07-22

Family

ID=26613254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002104391A Expired - Fee Related JP4302357B2 (ja) 2001-04-06 2002-04-05 半導体装置の作製方法

Country Status (1)

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JP (1) JP4302357B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6312134B2 (ja) * 2014-07-15 2018-04-18 独立行政法人国立高等専門学校機構 ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板

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