JP2002367904A5 - - Google Patents

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Publication number
JP2002367904A5
JP2002367904A5 JP2001175984A JP2001175984A JP2002367904A5 JP 2002367904 A5 JP2002367904 A5 JP 2002367904A5 JP 2001175984 A JP2001175984 A JP 2001175984A JP 2001175984 A JP2001175984 A JP 2001175984A JP 2002367904 A5 JP2002367904 A5 JP 2002367904A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001175984A
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Japanese (ja)
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JP2002367904A (ja
JP4290349B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2001175984A priority Critical patent/JP4290349B2/ja
Priority claimed from JP2001175984A external-priority patent/JP4290349B2/ja
Priority to CN011410027A priority patent/CN1218367C/zh
Priority to TW90114192A priority patent/TW521434B/zh
Publication of JP2002367904A publication Critical patent/JP2002367904A/ja
Publication of JP2002367904A5 publication Critical patent/JP2002367904A5/ja
Application granted granted Critical
Publication of JP4290349B2 publication Critical patent/JP4290349B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001175984A 2000-06-12 2001-06-11 半導体装置の製造方法 Expired - Fee Related JP4290349B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001175984A JP4290349B2 (ja) 2000-06-12 2001-06-11 半導体装置の製造方法
CN011410027A CN1218367C (zh) 2000-06-12 2001-06-12 薄膜半导体器件的制造方法
TW90114192A TW521434B (en) 2000-06-12 2001-06-12 Thin-film semiconductor device fabrication method

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-175788 2000-06-12
JP2000175788 2000-06-12
JP2001-108055 2001-04-06
JP2001108055 2001-04-06
JP2001175984A JP4290349B2 (ja) 2000-06-12 2001-06-11 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002367904A JP2002367904A (ja) 2002-12-20
JP2002367904A5 true JP2002367904A5 (enrdf_load_stackoverflow) 2006-10-26
JP4290349B2 JP4290349B2 (ja) 2009-07-01

Family

ID=27343702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001175984A Expired - Fee Related JP4290349B2 (ja) 2000-06-12 2001-06-11 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP4290349B2 (enrdf_load_stackoverflow)
CN (1) CN1218367C (enrdf_load_stackoverflow)
TW (1) TW521434B (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4717385B2 (ja) 2003-08-27 2011-07-06 三菱電機株式会社 半導体装置
JP2005236130A (ja) * 2004-02-20 2005-09-02 Hitachi Cable Ltd 半導体装置の製造方法
JP4660103B2 (ja) * 2004-03-09 2011-03-30 三菱電機株式会社 レーザ熱処理方法
JP2006049696A (ja) 2004-08-06 2006-02-16 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
CN100433242C (zh) * 2004-10-10 2008-11-12 友达光电股份有限公司 制作低温多晶硅薄膜的方法
JP4935059B2 (ja) * 2005-02-17 2012-05-23 三菱電機株式会社 半導体装置の製造方法
JP2007035812A (ja) * 2005-07-26 2007-02-08 Mitsubishi Electric Corp 多結晶シリコン膜の製造方法および薄膜トランジスタ
JP5133548B2 (ja) * 2006-09-29 2013-01-30 富士フイルム株式会社 レーザアニール方法およびそれを用いたレーザアニール装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5574312B2 (ja) * 2008-03-25 2014-08-20 国立大学法人山口大学 多結晶シリコン結晶粒界改質方法及び装置
CN102681288B (zh) * 2012-05-23 2015-03-25 上海交通大学 一种硅基光学限幅器
CN113754288B (zh) * 2021-09-08 2023-01-03 深圳爱尔创口腔技术有限公司 通过离子交换增强的荧光硅酸锂玻璃陶瓷及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPH0688979A (ja) * 1992-09-08 1994-03-29 Sumitomo Cement Co Ltd Ｑスイッチ・第２高調波発生複合素子
JPH0864526A (ja) * 1994-08-24 1996-03-08 Sony Corp 光照射による材料の改質方法および半導体装置の製造方法
JPH1084155A (ja) * 1996-09-06 1998-03-31 Ricoh Co Ltd 固体レーザ装置
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3707287B2 (ja) * 1998-09-03 2005-10-19 セイコーエプソン株式会社 半導体装置の製造方法
JP4841740B2 (ja) * 2000-04-26 2011-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

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