JP2002359443A - Connection structure of high-frequency package and wiring board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the connecting structure of a high frequency package and a wiring board, whose high-frequency transmission characteristics are superior without causing deteriorating of the transmission characteristics, even with high-frequency signal having a wide band, ranging from 20 GHz to 80 GHz at connection of the high-frequency packet to the wiring board. SOLUTION: An interval between conductive vias 24a and 24b for connecting ground layers 22 and 23 formed on both main faces 11a and 11b of a high-frequency transmission line substrate 20 constituting the high-frequency package 10, and an interval between conductive vias 36a and 36b for connecting ground layers 34 and 35 formed on both main faces 31a and 31b of a wiring board 30, on which the high-frequency package 10, is mounted, are set under the consideration of the relative dielectric constant of the high-frequency transmission line substrate 20 and the relative dielectric constant of the wiring board 30, so that the high-frequency transmission characteristics between the high-frequency transmission line substrate 20 and the wiring board 30 are enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection structure between a high-frequency package and a wiring board, and more particularly to a connection structure of 20 GHz.
The present invention relates to a connection structure between a high-frequency package and a wiring board that can electrically connect the high-frequency package and the wiring board without deteriorating the transmission characteristics of the high-frequency signal.

[0002]

2. Description of the Related Art In a conventional high-frequency package, a semiconductor element mounting region formed on a dielectric substrate and a high-frequency circuit in a peripheral portion thereof are sealed with an annular frame and a lid provided thereon. It consists of. The semiconductor element mounted in the semiconductor element mounting area is connected to a signal line layer formed through the side wall of the frame, and the signal line layer of the high-frequency package on which the semiconductor element is mounted is connected to a wiring. By being connected to the signal line layer of the substrate, it is possible to input and output high-frequency signals to and from the outside of the package. Such a high-frequency package
In the connection between the package and the wiring board, it is required to form a package structure and a signal line capable of inputting and outputting a high-frequency signal without deteriorating high-frequency signal characteristics.

FIG. 18 shows a conventional high-frequency package of this type.
FIG. 2 is a schematic view showing a connection structure between a semiconductor device and a wiring board,
(A) is a side cross-sectional view, and (b) is a BB cross-sectional perspective view in (a).

The dielectric substrate 41 is formed in a substantially rectangular parallelepiped plate shape having a thickness T. A ground layer 42 is formed on a lower surface 41b of the dielectric substrate 41, while a predetermined portion of an upper surface 41a of the dielectric substrate 41 is provided. Is formed with an annular dielectric frame 44. The predetermined portion of the dielectric substrate top surface 41a in the frame body-side region 44d, while the width of a thin-film circuit portion 43a of w ₁ is formed in plural, the outer region facing the circuit portion 43a across the frame 44 A lead portion 43b having the same width (w ₁ ) is formed at 44e. One end portion of the circuit portion 43a and the Li - the end of the de-portion 43b is connected width via a conductor portion 43c of w _2, the conductor portion 43c is embedded in the wall portion 44a of the frame 44 I have. These circuit section 43a, lead section 43b, conductor section 4
The signal line layer 43 includes 3c.

A conductor 43c and a wall 44a near the conductor 43c
In order to make the characteristic impedance of the circuit configured by including the same as that of the circuit portion 43a and the lead portion 43b,
Width w ₂ of the conductive portion 43c circuit portion 43a and a lead portion 43
b is set to a value smaller than the width w ₁ of. In order to reduce the transmission loss by suppressing the reflection loss in the signal line layer 43, the circuit portion 43a, the lead portion 43b, the conductor portion 4
3c, the characteristic impedances are matched.

A semiconductor element 45 is mounted on a substantially central portion of the dielectric substrate upper surface 41a in the frame inner region 44d, and a pad 45a of the semiconductor element 45 is bonded to the other end of the circuit section 43a. The connection is made via a wire 45b. A lid 46 is joined (hermetic seal) to the upper surface of the frame body 44, and the frame body inner region 44d on the dielectric substrate 41 is sealed by the lid body 46. . These dielectric substrate 41, ground layer 42, signal line layer 43, frame 4
4. The microstrip line type high-frequency package 40 includes the lid 46 and the like.

The signal line layer 4 of the high-frequency package 40
The third lead portion 43b is electrically connected to one end of a signal line layer 52 formed on the wiring board 50 via an external lead terminal 53.

With such a connection structure, a high-frequency signal (not shown) is supplied from the signal line layer 52 of the wiring board 50 to the lead portion of the signal line layer 43 of the high-frequency package 40 via the external lead terminal 53. 43b, the conductor portion 43c and the circuit portion 43
a, the high-frequency signal output from the semiconductor element 45 of the high-frequency package 40 is transmitted from the circuit section 43a of the signal line layer 43 to the conductor section 43a.
The signal is output to the signal line layer 52 of the wiring board 50 via the lead c, the lead portion 43b, and the external lead terminal 53.

However, in the connection structure between the high-frequency package 40 and the wiring board 50 thus configured, the characteristic impedance at the external lead terminal 53 is reduced by the signal line layer 4.
It is very difficult to make them equal to 3 and 52. Therefore, the external lead terminals 53 and the signal line layer 52 on the wiring board 50, and the external lead terminals 53 and the signal line layer 43 of the high-frequency package 40. The mismatch of the characteristic impedance between the lead portion 43b and the external lead terminal 53 and the signal line layer 52 on the wiring board 50, and the external lead terminal 53 There is a problem that the signal reflection caused by the mismatch of the characteristic impedance at the junction between the signal line layer 43 of the high-frequency package 40 and the signal line 43 increases.

In order to cope with such a problem, the wiring structure of the signal line layer of the high-frequency package is improved without using an external lead terminal for connecting the high-frequency package to the wiring board. There has been proposed a device in which a signal line layer of a high-frequency package is directly connected to a signal line layer of a wiring board.

Japanese Patent Application Laid-Open No. 2000-164768 discloses that
Connection pads are formed on both sides of the connection portion between the signal line layers of the high-frequency package having the transmission line of the microstrip transmission mode and the wiring board, and the connection pads are formed inside the high-frequency package via the connection pads. By providing a connection conductor path (through-hole conductor) for connecting the formed ground layer and the ground layer formed inside the wiring board,
It is disclosed that a high-frequency package can be connected to a wiring board without deteriorating transmission characteristics of a high-frequency signal.

FIG. 19 is a side sectional view showing a connection structure between a high-frequency package and a wiring board described in Japanese Patent Application Laid-Open No. 2000-164768. FIG. 20 is a diagram showing a main part of a connection structure between the high-frequency package and the wiring board shown in FIG. 19, (a) is a top view of the high-frequency package,
(B) is a bottom view of the high-frequency package, and (c) is a top view of the wiring board.

In the figure, reference numeral 61 denotes a dielectric substrate made of ceramic or the like. A cap-shaped lid 62 is joined to a predetermined portion of the upper surface of the dielectric substrate 61 via a seal portion 63. I have. A plurality of signal line layers 64 are formed at predetermined positions on the upper surface of the dielectric substrate 61 in the inner region 62 a of the cover 62, and one end of the signal line layer 64 is connected to the semiconductor element 65.

A ground layer 66 is provided inside the dielectric substrate 61.
Are formed over the entire surface of the dielectric substrate 61 except for the slit hole 66a, and the ground layer 66 and the signal line layer 64 are formed.
Thus, a microstrip line as the third high-frequency transmission line C is formed.

Further, a signal line layer 67 is formed at a predetermined position on the lower surface of the dielectric substrate 61, and a microstrip line as the first high-frequency transmission line A is formed from the signal line layer 67 and the ground layer 66. Is formed. Further, connection pads 68 are formed on both sides of one end 67a of the signal line layer 67, and one end 67a of the signal line layer 67 is formed.
And the connection pad 68 form a connection portion 69. The connection pad 68 and the ground layer 66 are connected by a through-hole conductor 70. Further, the first signal transmission line A and the third signal transmission line C are
The signal is electromagnetically coupled via a, and a signal is transmitted between the two lines A and C. These dielectric substrate 61, signal line layer 6
4. The high-frequency package 60 includes the ground layer 66, the signal line layer 67, the lid 62, and the like.

Reference numeral 80 in the figure denotes a wiring board on which the high-frequency package 60 is mounted. The signal as the second high-frequency transmission line B is provided on the upper surface of the dielectric substrate 81 constituting the wiring substrate 80 at a position matching the connection portion 69 formed on the back surface of the dielectric substrate 61 of the high-frequency package 60. A line layer 82 and connection pads 83 are formed on both sides thereof, a ground layer 84 is formed inside the dielectric substrate 81, and the connection pads 83 and the ground layer 84 are connected to the through-hole conductors 8.
5 are connected. In addition, a concave portion 81a is formed on the surface of the wiring board 80.

Then, the first high-frequency transmission line A on the lower surface of the high-frequency package 60 and the second high-frequency transmission line B on the upper surface of the wiring board are opposed to each other. The high-frequency package 60 and the wiring board 80 are connected by joining the one end 82a of the signal line layer 82 with the joining material 71 such as solder and joining the connection pads 68 and 83 together. Have been done.

The connection pad 68 and the through-hole
The connection structure between the high-frequency package 60 provided with the micro-strip conductor 70 and the wiring board 80 provided with the connection pad 83 and the through-hole conductor 85 has a transmission line of a microstrip transmission mode, The connectivity between the high-frequency package 60 for transmitting a signal by coupling and the wiring board 80 having a transmission line of a microstrip transmission mode can be enhanced, and the through-hole conductor 85 can be provided. 30 GH in comparison with the case where it is connected to a wiring board on which no
It is the degradation of the insertion loss S ₂₁ can be suppressed in the frequency band of Z～40GHz.

[0019]

In the connection structure between the high-frequency package 40 and the wiring board 50 shown in FIG. 18, the signal transmission at the connection portion via the external lead terminal 53 is performed as described above. There has been a problem that the reflection loss is increased, the signal cannot be transmitted efficiently, and especially in the quasi-millimeter wave band exceeding 20 GHz, the transmission characteristics cannot be maintained well.

In the connection structure between the high-frequency package 60 and the wiring board 80 shown in FIGS.
Insertion loss S in the frequency band of 0 GHz to 40 GHz
_Although the transmission characteristics (insertion loss S ₂₁ ) are improved by reducing ₂₁ , the transmission characteristics tend to be significantly degraded above 40 GHz, and the transmission characteristics are improved in the higher frequency band above 40 GHz. There was a problem that it was not possible.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and when a high-frequency package is connected to a wiring board, transmission characteristics are not deteriorated even with a high-frequency signal in a wide band of 20 GHz to 80 GHz. It is an object of the present invention to provide a connection structure between a high-frequency package having excellent high-frequency transmission characteristics and a wiring board.

[0022]

As described above, in a conventional connection structure between a high-frequency package and a wiring board, a transmission characteristic of a wide-band high-frequency signal up to a high-frequency band of about 80 GHz is obtained. It could not be transmitted without degradation.

Therefore, the present inventor pays attention to the interval between the conductor vias formed on the high-frequency transmission line substrate and the wiring substrate constituting the high-frequency package, and considers the interval between the conductor vias formed on the high-frequency package and the wiring. By setting the distance between the conductor vias formed on the substrate and the relative permittivity of the dielectric substrate constituting each substrate, it is possible to transmit the signal without deteriorating the transmission characteristics of the high frequency signal on the high frequency side. They have found that they can do this and have completed the present invention.

In order to achieve the above object, a connection structure (1) for connecting a high-frequency package to a wiring board according to the present invention comprises a ground formed on both main surfaces of a high-frequency transmission line substrate constituting the high-frequency package. The spacing between the first conductor via rows connecting the layers and the spacing between the second conductor via rows connecting the ground layers formed on both main surfaces of the wiring board on which the high-frequency package is mounted are determined by the following. In order to enhance high-frequency transmission characteristics between the high-frequency transmission line substrate and the wiring substrate, the high-frequency transmission line substrate is set in consideration of the relative dielectric constant of the high-frequency transmission line substrate and the relative dielectric constant of the wiring substrate. .

According to the connection structure (1) between the high-frequency package and the wiring board, it is possible to suppress an increase in reflection loss at a connection portion between the high-frequency package and the wiring board and to reduce a transmission loss. Therefore, a connection structure between the high-frequency package and the wiring board having excellent transmission characteristics over a high-frequency region having a shorter wavelength can be obtained.

The connection structure (2) between the high-frequency package and the wiring board according to the present invention is the same as the connection structure (1) between the high-frequency package and the wiring board according to the present invention. Ε _r1 , the relative permittivity of the wiring board is ε _r2 , the wavelength in a high-frequency vacuum propagating through the signal line is λ ₀ , the interval between the first conductor via rows is W _p , and the second conductor If the interval of the vias column was a _{W b, W p <λ 0} /
(2 × ε _r1 ^1/2 ) and W _b <λ ₀ / (2 × ε _r2 ^1/2 )
_Wp and _Wb are set in the range of.

According to the connection structure (2) between the high-frequency package and the wiring board, the first conductive via in the high-frequency signal radiated in a direction substantially perpendicular to the signal line formed on the high-frequency transmission line board is provided. thereby preventing the occurrence of resonance due to the distance W _p of columns, it is possible to prevent the occurrence of ripples, and the high-frequency signal radiated in a substantially perpendicular direction of the signal lines formed on the wiring board, the second thereby preventing the occurrence of resonance due to the distance W _b conductive via columns,
The occurrence of ripple can be prevented.

Therefore, it is possible to suppress an increase in reflection loss at a connection point between the high-frequency package and the wiring board and to reduce a transmission loss, and to transmit a high-frequency signal over a high-frequency region having a shorter wavelength. A connection structure between the high-frequency package and the wiring board having excellent characteristics can be obtained.

Further, the present inventors configure each substrate with the interval between the first conductor via rows formed on the high-frequency package and the interval between the second conductor via rows formed on the wiring board. By setting in consideration of the relative permittivity of the dielectric substrate, and by adjusting the gap and the width of the signal line at the junction between the high-frequency package and the wiring substrate, the mountability is improved and the transmission characteristics are improved. Was found to be even better.

That is, the connection structure (3) between the high-frequency package and the wiring board according to the present invention comprises the above-described high-frequency package.
In the connection structure (2) between the high-frequency transmission line substrate and the first signal line, the first signal line, the first signal line, and the first ground are connected to one main surface of the high-frequency transmission line substrate. A first gap provided between the first substrate and the other main surface of the high-frequency transmission line substrate, one end of which is connected to the wiring substrate, and the other end of which is connected to the first conductive via via a third conductive via. A second signal line connected to the second signal line, and a second gap provided between the second signal line and the first ground layer. A third signal line on the side of the joint surface with the first die, and a third gap provided between the third signal line and the second ground layer;
The width of the second gap at the junction between the high-frequency package and the wiring board is set to be larger than the width of the second gap other than the junction.
Or, the width of the third gap at the junction is:
The width of the third gap other than the joint is set to be larger than the width of the third gap.

According to the connection structure (3) between the high-frequency package and the wiring board, the width of the second gap at the joint is larger than the width of the second gap other than the joint. Since the width of the third gap is set and / or the width of the third gap at the joint is set to be larger than the width of the third gap other than the joint, the second gap at the joint is formed. Of the third signal line and / or the third signal line can be suppressed, and the matching of the impedance at the junction can be improved. In particular, the intermediate frequency band (10
(GHz to 40 GHz), it is possible to further suppress an increase in reflection loss, and it is possible to further improve transmission characteristics.

[0032] The width of the second gap at the junction is such that the impedance of the second signal line at the junction is close to the impedance of the second signal line other than the junction (usually 50Ω). It is preferable to widen as much as possible, but the upper limit is self-limited by the interval between the first conductor via rows.

Similarly, the width of the third gap at the junction is determined by changing the impedance of the third signal line at the junction to the impedance of the third signal line other than the junction (usually 50Ω). It is preferable to widen as much as possible so that it can be approached, but the upper limit is limited by the interval between the second conductor via rows.

The widening of the gap width makes it easy to connect the high-frequency package to the wiring board, and more reliably prevents connection failure such as short circuit. Performance can be improved.

Further, the connection structure (4) for connecting the high-frequency package and the wiring board according to the present invention is the same as the connection structure (3) for connecting the high-frequency package and the wiring board, in the connection structure for the high-frequency transmission line board. The length of the second gap portion, whose width is set to be larger in the length direction of the signal line from the portion, is D _p , and the width of the wiring board in the length direction of the third signal line is further from the junction. If the D _b the length of the third gap part is set larger, 0 <D _p ≦
_{λ 0/4 (ε r1 /} 2 + 1/2) 1/2, and / or 0 <D
_{b ≦ λ 0/4 (ε} r2 / 2 + 1/2) 1/2 relationship is characterized by the establishment.

According to the connection structure (4) between the high-frequency package and the wiring board, the lengths D _p and D _b are:
Since the above relationship is established, the length D
_p, wherein the length D _b min only, Inpi of the second signal line and / or the third signal lines in the set gap portion width increases - it is possible to suppress a decrease of the dance. Therefore, it is possible to further improve the impedance matching at the junction between the second signal line and the third signal line.

Further, the length D _p in the bonding portion, it is possible to provide a margin to the width of the joint as the length D _b, the high-frequency package - performed more easily the connection work between di and the wiring substrate In addition to this, the occurrence of connection failure such as a short circuit can be further reduced, and the mountability can be further improved.

The connection structure (5) between the high-frequency package and the wiring board according to the present invention is the same as the connection structure (3) or (4) between the high-frequency package and the wiring board. The first ground layer is not formed in a predetermined area portion of the substrate from the third conductor via connection end of the first signal line to one side surface of the wiring board connection side. Features.

According to the connection structure (5) between the high-frequency package and the wiring board, the first region is provided in the predetermined region.
The ground layer is not formed,
Between the first signal line and the first ground layer and the third signal line.
The capacitance component between the signal line of the first and the first ground layer can be reduced, in particular, the deterioration of the transmission characteristics in the high frequency region is prevented, and the impedance is matched over a higher frequency region. A connection structure between the high-frequency package and the wiring board having more excellent transmission characteristics can be obtained.

In the connection structure (6) for connecting a high-frequency package and a wiring board according to the present invention, in the connection structure (5) for connecting the high-frequency package and the wiring board, at least the predetermined region portion may be at least one of It is characterized in that it includes a portion facing the second signal line between the end of the first signal line on the third conductor via side and one side surface of the wiring board connection side.

According to the connection structure (6) between the high-frequency package and the wiring board, the connection between the second signal line and the first ground layer and the connection between the third signal line and the first signal line. The capacitance component between the second signal line and the ground layer can be further reduced, and the impedance matching at the junction can be improved by suppressing the lowering of the impedance related to the second signal line on the higher frequency side. .

The connection structure (7) for connecting the high-frequency package and the wiring board according to the present invention is the same as the connection structure (5) or (6) for connecting the high-frequency package and the wiring board, wherein Is applied to the sealing portion of the high-frequency package, a lid for sealing the high-frequency package, or a frame formed in the sealing portion is formed using an insulating material. It is characterized by having.

According to the connection structure (7) between the high-frequency package and the wiring board, the transmission characteristic in the high-frequency region can be obtained by not forming the first ground layer in the predetermined region. The effect of preventing inferiority can be reliably obtained.

[0044]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a connection structure between a high-frequency package and a wiring board according to the present invention will be described below with reference to the drawings. FIG. 1 is a partial cross-sectional perspective view schematically showing a connection structure between a high-frequency package and a wiring board according to Embodiment (1). 2 (a) to 2 (c) are enlarged schematic views showing a main part of a connection structure between a high-frequency package and a wiring board according to the embodiment (1), and FIG. 1 is a cross-sectional view taken along line AA, (b) is a plan view, and (c).
Is a bottom view.

In the drawing, reference numeral 20 denotes a high-frequency transmission line substrate constituted by using the dielectric substrate 11. Dielectric substrate 11
Thickness with alumina ceramics or the like is formed in a rectangular parallelepiped plate shape of T _1, the lid 12 has a cap shape in the predetermined portion of the dielectric substrate upper surface 11a is joined. Lid 1
Reference numeral 2 denotes a cover having an expansion coefficient substantially similar to that of the dielectric substrate 11.
Or an invar alloy.

A space 11c for mounting a semiconductor element (not shown) is formed substantially at the center of the lid inner region 12b, and the upper surface 1 of the dielectric substrate 1 facing the space 11c is sandwiched therebetween.
1a, the signal line layer 14 in the form of a thin film having a width w ₁
Are formed. A gap g is formed around the signal line layer 14.
_A ground layer 22 is formed through the _first through-hole 1, and these constitute a coplanar wave guide. On the other hand, the predetermined portion of the dielectric substrate bottom surface 11b, width film-like signal line 15 of w ₂ is formed. Signal line layer 15
Around the has a ground layer 23 is formed via a gap g _2, these by coplanar-web - Bugaido is formed.

The conductor via 1 is provided at the end 14 a of the signal line layer 14.
6 is connected, and the lower end of the conductor via 16 is connected to the end 15 a of the signal line layer 15. The signal line electrode 13 includes the signal line layer 14, the conductor via 16, and the signal line layer 15.

On both sides of the signal line layers 14 and 15,
Conductive vias 24a and 24b connecting the ground layer 22 and the ground layer 23 are formed respectively. The distance between the conductor vias 24a and between the conductor vias 24b is D ₁
Is set to When the relative permittivity of the dielectric substrate 11 is ε _r1 and the wavelength of a high-frequency wave propagating through the signal line electrode 13 in vacuum is λ ₀ , the interval D ₁ is D ₁ <λ ₀ / (2
× ε _r1 ^1/2 ). Therefore, the high-frequency signal radiated from the signal line electrode 13 in the vertical direction of the signal line layers 14 and 15 is applied to the gap D ₁ between the conductor vias 24a and 24b.
It is possible to prevent the ripple caused by de - through prevents the leaking to the dielectric substrate 11 side, unnecessary mode due to the gaps D _1. Although reasonable lower limit of the interval D ₁ is small, and if the conductor vias 24a on the dielectric substrate 11, is limited itself by technique of forming close was what conductor via 24b.

[0049] The distance between the inner inner conductor via 24b of conductor vias 24a formed across the signal line layer 14, 15 is set to W _{p. Assuming} that the relative permittivity of the dielectric substrate 11 is ε _r1 and the wavelength of the high-frequency wave propagating through the signal line electrode 13 in vacuum is λ ₀ , the interval W _p is W _p <λ.
It is set in the range of ₀ / (2 × ε _r1 ^1/2 ). Therefore, in the high-frequency signal substantially vertically radiating with respect to the signal line layer 14, 15 from the signal line electrode 13, thereby preventing the occurrence of resonance due to the distance W _p of the conductor via 24a and the conductor vias 24b, ripple Generation can be prevented. In addition, although the small reasonable lower limit of the interval W _p,
Actually, it is limited by the widths w ₁ and w ₂ of the signal line layers 14 and 15 and the gaps g ₁ and g ₂ . The ground electrode 21 includes the ground layer 22, the conductor vias 24a and 24b, and the ground layer 23. In addition, these ground electrodes 21 and signal line electrodes 13 include
A wave guide is formed, and a semiconductor element (not shown) is connected to the coplanar wave guide near the space 11c by wire bonding or the like.

In the drawing, reference numeral 30 denotes a wiring board on which the high-frequency package 10 is mounted. A dielectric substrate 31 constituting the wiring board 30 is formed of alumina ceramic or the like. width is thin-film of the signal line layer 32 w ₃ is formed in a predetermined portion of the upper surface 31a. Ground layer 3 around the signal line 32 via a gap g ₃
4 are formed, and these constitute a coplanar wave guide. On the other hand, the lower surface 31b of the dielectric substrate
, A ground layer 35 is formed.

On both sides of the signal line layer 32, conductive vias 36 connecting the ground layers 34 and 35 are provided.
a and 36b are respectively formed. And how these conductive via 36a, the interval between the conductor via 36b is set to D _2. When the relative permittivity of the dielectric substrate 31 is ε _r2 and the wavelength of the high frequency wave propagating through the signal line layer 32 in vacuum is λ ₀ , the distance D ₂ is D ₂ <λ ₀ / (2 × ε _r2
^1/2 ) range. Therefore, the high-frequency signal radiated in the vertical direction of the signal line layer 32 is
a, 36b through the gap D ₂ of the prevent leaking to the dielectric substrate 31 side, unnecessary due to the gap D ₂ mode - it is possible to prevent the ripple caused by de. Although small reasonable lower limit of the interval D _2, and if the conductor vias 36a on the dielectric substrate 31, is limited itself by technique of forming close was what conductor via 36b.

[0052] The distance between the inner inner conductor via 36b of conductor vias 36a formed across the signal line layer 32 is set to W _b. This interval W _b is set to the dielectric substrate 3
_Assuming that the relative permittivity of 1 is ε _r2 , and the wavelength of the high frequency wave propagating through the signal line layer 32 in vacuum is λ ₀ , W _b <λ ₀ / (2
× ε _r2 ^1/2 ). Therefore, it is possible in the high-frequency signal radiated in a substantially vertical direction of the signal line layer 32, thereby preventing the occurrence of resonance due to the spacing W _b of the conductive via 36a and the conductor vias 36b, to prevent the occurrence of ripples . Although reasonable lower limit smaller spacing W _b, in practice, the width w ₃ of the signal line layer 32 is limited itself by the gap g _3, and the like. These ground layers 3
4. The ground electrode 33 includes the conductor vias 36a and 36b and the ground layer 35.

When mounting the high-frequency package 10 on the wiring board 30, the high-frequency package 1
0, the signal line layer 15 on the lower surface and the signal line layer 32 on the upper surface of the wiring board 30 face each other, and the end 15b of the signal line layer 15 and the end 32a of the signal line layer 32 are joined by soldering or the like. It is joined by the material 37. Note that the width D ₃ of the overlapped junction between the signal line layer 15 and the signal line layer 32 is preferably as small as possible in order to minimize reflection loss at the connection portion and further improve transmission characteristics. Therefore, the high-frequency package 10
And in consideration of the connection strength between the wiring board 30, it is sufficient to set the appropriate connection width D _3.

The high-frequency package 1 constructed as described above
In the connection structure between the wiring board 30 and the wiring board 30, a high-frequency signal (not shown) is transmitted from the signal line layer end 32a of the wiring board 30 via the bonding material 37 to the signal line layer end 1 of the high-frequency package 10.
5b, the signal line electrode 13, and the signal line layer end 14b are input to a semiconductor element (not shown), while the signal is input from the semiconductor element to the signal line layer end 14b, the signal line electrode 13, and the signal line layer end 15b. Then, it is output to the signal line layer 32 of the wiring board 30 via the bonding material 37.

According to the connection structure between the high-frequency package 10 and the wiring board 30 according to the embodiment (1), the relative permittivity of the high-frequency transmission line substrate 20 which affects the signal transmission characteristics in the high-frequency region is reduced. Considering the relative permittivity of the wiring board 30, the distance between the conductor vias 24a and 24b connecting the ground layers 22 and 23 formed on both main surfaces of the high-frequency transmission line board 20, Conductor via 36a connecting ground layers 34 and 35 formed on both main surfaces
And the distance between the conductor via 36b. Accordingly, it is possible to suppress an increase in reflection loss at a connection portion between the high-frequency package 10 and the wiring board 30, to reduce a transmission loss, and to obtain a high-frequency signal having excellent transmission characteristics over a high-frequency region with a shorter wavelength. A connection structure between the package and the wiring board can be provided.

The conductor via 2 of the high-frequency package 10
The distance between the conductive vias 4a and the conductive vias 24b is W _p ,
If the distance between the conductive via 36a and the conductor vias 36b of 0 was _{W b, W p <λ 0} / (2 × ε r1 1/2), and W _b <
Since W _p and W _b are set within the range of λ ₀ / (2 × ε _r2 ^1/2 ), the signal line layers 14 and 15 are transmitted from the signal line electrode 13.
In a high frequency signal radiated in a substantially vertical direction with respect to
Thereby preventing the occurrence of resonance due to the distance W _p of the conductor via 24a and the conductor vias 24b, it is possible to prevent the occurrence of ripples, and the high-frequency signal radiated in a substantially vertical direction of the signal line layer 32, thereby preventing the occurrence of resonance due to the spacing W _b of the conductive via 36a and the conductor vias 36b, it is possible to prevent the occurrence of ripples.

Therefore, it is possible to suppress an increase in reflection loss at the connection point between the high-frequency package 10 and the wiring board 30 and to reduce a transmission loss, and to achieve a high-frequency characteristic over a high-frequency region with a shorter wavelength. And a connection structure between the high-frequency package and the wiring board which is excellent in quality.

In the connection structure between the high-frequency package 10 and the wiring board 30 according to the first embodiment,
Although the connection structure in which the lower portion of the high-frequency package 10 is opened below the dielectric substrate 11 has been described, in another embodiment, the wiring substrate 30 is located below the dielectric substrate 11.
May be arranged. In this case, the width w _{2 of the} signal line layer 15 and the gap g ₂ between the signal line layer 15 and the ground layer 23 are set.
It is desirable to redesign the wiring board 30 in consideration of the value of the dielectric constant of the dielectric substrate 31 of the wiring board 30.

In the connection structure between the high-frequency package 10 and the wiring board 30 according to the above-described embodiment (1),
Although the signal line layer 15 and the signal line layer 32 are connected by soldering, in another embodiment, one end 15a of the signal line layer 15 of the high-frequency package 10 or one end of the signal line layer 32 of the wiring board 30 is used. By forming a bump on the portion 32a and connecting the high-frequency package 10 and the wiring board 30 with the bump, transmission loss can be further suppressed.

FIGS. 3A to 3C show an embodiment (2).
FIG. 2 is an enlarged schematic view showing a main part of a connection structure between a high-frequency package and a wiring board according to the first embodiment.
(B) is a plan view, and (c) is a bottom view. Note that components having the same functions as those of the embodiment (1) are denoted by the same reference numerals.

The connection structure between the high-frequency package and the wiring board according to the embodiment (2) is different from the connection structure between the high-frequency package and the wiring board according to the embodiment (1). In the structure of the di.

On the lower surface of the dielectric substrate 11 of the high-frequency transmission line substrate 20A constituting the high-frequency package 10A, a concave portion 11d for mounting the semiconductor element 19 is formed. Is joined to a lid 12 having a cap shape. Lid inner region 12
The predetermined portion between the concave portion 11d and the wall portion 12a of b, the width is formed film-like signal line 14 of w _1. The end portion 14b of the signal line layer 14 is
a through a wire 19b. A thin-film-like signal line layer 17 having a width of w ₄ is formed in a portion of the lid 12 opposite to the signal line layer 14 with the side wall portion 12a interposed therebetween in the outer region 12c of the side wall portion.

A gap g is formed around the signal line layers 14 and 17.
_1, g ₄ through the ground layer 22, 26 are formed integrally, they by coplanar-web - Bugaido is formed. On the other hand, the predetermined portion of the dielectric substrate top surface 11a, a width of a thin film-like signal line 15 of w ₂ is formed. Around the signal line 15, and ground layer 23 is formed via a gap g _2, these by coplanar-web - Bugaido is formed.

Ends 14a, 17a of signal line layers 14, 17
Are connected to the lower ends of the conductor vias 16, respectively, and the upper ends of the conductor vias 16 are both ends 15a, 15b of the signal line layer 15.
It is connected to the. These signal line layer 14 and conductor via 1
The signal line electrode 13 includes the signal line layer 15, the conductor via 16, and the signal line layer 17.

Conductor vias 24a and 24b for connecting the ground layers 22 and 26 and the ground layer 23 are formed on both sides of the signal line layers 14, 15 and 17, respectively. The distance D ₁ between the conductor vias 24 a and between the conductor vias 24 b is set to D ₁ <λ ₀ as in the first embodiment.
/ (2 × ε _r1 ^1/2 ) is set. Further, the distance W _p between the inside of the conductor via 24a and the inside of the conductor via 24b is W _p <λ ₀ /, as in the first embodiment.
(2 × ε _r1 ^1/2 ) is set. The ground electrode 21 includes the ground layer 22, the conductor vias 24a and 24b, the ground layer 23, the conductor vias 24a and 24b, and the ground layer 26. In addition, these ground electrodes 21 and signal line electrodes 13 are
A wave guide is configured. In the drawing, reference numeral 30 denotes a wiring board on which the high-frequency package 10A is mounted, which has substantially the same configuration as the wiring board 30 in the embodiment (1).

In mounting the high-frequency package 10A on the wiring board 30, the signal line layer 17 on the lower surface of the high-frequency package 10A and the signal line layer 32 on the upper surface of the wiring board 30 are opposed to each other. End 17 of signal line layer 17
b and the end 32a of the signal line layer 32 are connected to a bonding material 3 such as solder.
7 are joined. The signal line layer 17 and the signal line layer 32
The width D ₃ of the joined portion overlapping with the above is preferably as small as possible in order to minimize reflection loss at the connection portion and further improve transmission characteristics. Therefore, Embodiment (1)
Similarly to the high-frequency package - in consideration of the connection strength between di 10A and the wiring board 30, it is sufficient to set the appropriate connection width D _3.

The high-frequency package 1 constructed as described above
In the connection structure between the circuit board 0A and the wiring board 30, a high-frequency signal (not shown) is transmitted from the signal line layer end 32a of the wiring board 30 via the bonding material 37 to the signal line layer end 17b of the high-frequency package 10A. While being input to the semiconductor element 19 through the signal line electrode 13 and the signal line layer end 14b, the semiconductor element 19 causes the signal line layer end 14b, the signal line electrode 13, the signal line layer end 17b, and the bonding material 37 to be input. In the connection structure between the high-frequency package and the wiring board in the above-described embodiment (2), which is output to the signal line layer 32 of the wiring board 30 through
It is possible to obtain substantially the same effects as in the embodiment (1).
Further, by providing the semiconductor element mounting area 11d in the high-frequency package 10A on the connection surface side with the wiring board 30, the overall thickness can be reduced, and the space for the mounting portion can be reduced. it can.

Next, the connection structure between the high-frequency package and the wiring board according to the embodiment (3) will be described. FIG.
FIG. 5 is an exploded schematic view showing an enlarged main part of the high-frequency package and the wiring board for describing a connection structure between the high-frequency package and the wiring board according to the embodiment (3);
(A) is a plan view, (b) is a bottom view. Note that components having the same functions as those of the embodiment (1) are denoted by the same reference numerals.

The connection structure between the high frequency package and the wiring board according to the embodiment (3) is different from the connection structure between the high frequency package and the wiring board according to the embodiment (1).
It is in the structure of a joint E where the high-frequency package 10B and the wiring board 30A are joined.

In the embodiment (1), the relative permittivity and the thickness of the dielectric substrates 11 and 31 of the high-frequency package 10 and the wiring substrate 30 are the same, and the width w of the signal line layer 15 is
₂ and the width w ₃ of the signal line layer 32 and the case where the width of the gap g _{2 and} the width of the gap g ₃ are set to values close to each other, the relative dielectric constant of the dielectric substrates 11 and 31 is assumed. The thicknesses T ₁ and T ₂ , or the widths of the signal line layers 15 and 32 formed on the dielectric substrates 11 and 31, respectively, may actually differ greatly.

In such a case, in order to match the impedance at the junction E between the signal line layer 15 of the high-frequency package 10 and the signal line layer 32 of the wiring board 30, the widths of the signal line layers 15, 32 are adjusted. the width of the gap g _2, g ₃ between the signal line 15 and 32 and the ground layer 23, 34, depending on the specific dielectric constant and thickness T _1, T ₂ of the dielectric substrate 11 and 31, Must be set to an appropriate value.

However, when the width of the signal line layer 15 of the high-frequency package 10, the width of the signal line layer 32 of the wiring board 30, and the widths of the gaps g ₂ and g ₃ are set to different values, for example, The widths of the signal line layers 15 and 32 of the substrate are the same (w ₂ = w ₃ ), and the gap g of the high-frequency package 10 is
If _2/5 is smaller than the gap g ₃ of the wiring board _{30 (g 3> g 2)} , is performed as it is connected, the displacement at the time of connection, the signal line layer 32 of the wiring board 30 and the high-frequency package -
There is a high possibility that the ground layer 23 of the die 10 comes into contact and short-circuits occur, or a solder bridge is generated at the time of joining using solder or the like and short-circuits occur, resulting in poor connection.

The width w of the signal line layer 32 of the wiring board 30
_3, the high-frequency package - width including the signal line layer 15 di 10 and the gap g ₂ provided on both sides thereof (w ₂ + ₂ × g
₂ ) If it is larger than that, it is impossible to connect the ground layer 23 of the high-frequency package 10 and the signal line layer 32 of the wiring board 30 without short-circuiting.

The connection structure between the high-frequency package and the wiring board according to the embodiment (3) is based on the relative permittivity of the dielectric substrates 11 and 31, the thicknesses T ₁ and T ₂ , and on the dielectric substrates 11 and 31. width of the signal line layer 15,32A formed in the w _2, w _3, even when the width w _g2, w _g3 of the gap g _2, g ₃ is set to different values, Inpi at the junction E - dancing It has improved matching, has excellent transmission characteristics, and can further improve mountability.

At a predetermined portion of the lower surface 11b of the dielectric substrate of the high-frequency transmission line substrate 20B constituting the high-frequency package 10B, a thin-film signal line layer 15 having a width of w ₂ is formed. The gap g ₂ and the gap around the signal line layer 15
_A ground layer 23 is formed through the junction ₂₁ and the junction E
The width w _g21 of the gap g ₂₁ formed at the connection portion E
The width is set to be larger than the width w _g2 of the gap g ₂ other than.

The width at the joint E is w at a predetermined position on the upper surface 31a of the dielectric substrate constituting the wiring substrate 30A.
₃₁ , a thin-film signal line layer 32A having a width w ₃ other than the junction E
Are formed. Around the signal line 32A, the gap g _3, and a ground layer 34 is formed via a gap g _31, these by coplanar-web - Bugaido is formed. On the other hand, a ground layer 35 is formed on the lower surface 31b of the dielectric substrate.

The width w _g21 of the gap g ₂₁ is equal to the width of the wiring board 30.
Taking into account the width w _g31 etc. A signal line width w ₃₁ and gap g ₃₁ of 32A at the junction E of, and is set appropriately.

The width w _g31 of the gap g ₃₁ formed at the junction E is such that the width w ₃₁ of the signal line layer 32A at the junction E is smaller than the width w ₃ of the signal line layer 32A other than the connection E. The gap g ₃ other than the joint E by the set amount
_Is set to be larger than the width w _g3 . This gap g
₃₁ the width w of the _g31 high-frequency package - the width w of the width w ₂ and the gap g ₂₁ of the signal line 15 at the junction E of di 10B
It is set in consideration of _{g21 and the} like.

That is, the width w ₂ of the signal line layer 15 at the junction E between the high-frequency package 10B and the wiring board 30A.
And a width w ₃₁ of the signal line 32A are matched, further match the width w _g31 width w _g21 and the gap g ₃₁ of the gap g _21.

The other structures are substantially the same as those shown in FIGS. 1 and 2, and a detailed description of the structure is omitted here. In the connection structure between the high-frequency package 10B and the wiring board 30A thus configured, a high-frequency signal (not shown) is used to connect the high-frequency package 10 and the wiring board 30 according to the first embodiment. Input and output as well as the structure.

According to the connection structure between the high-frequency package 10B and the wiring board 30A according to the above-described embodiment (3), substantially the same effects as those of the above-described embodiment (1) can be obtained. frequency package at the junction E - width w _g21 di 10B of the gap g ₂₁ is greater than the width w _g2 of the gap g ₂ except joint E is set, also the width w _g31 of the gap g ₃₁ of the wiring substrate 30A, Since the width w _g3 of the gap g ₃ other than the joint E is set to be larger,
A decrease in the impedance of the signal line layers 15 and 32A at the junction E can be suppressed, and the impedance matching at the junction E can be improved. In particular, it is possible to further suppress an increase in reflection loss in the intermediate frequency band (10 GHz to 40 GHz), and to further improve transmission characteristics. The width w _g21 of the gap g _21, and the high-frequency package by broadening w _g31 of the gap g ₃₁ - a it becomes possible to easily perform connecting work between the di 10B and the wiring substrate 30A, such as a short circuit connection failure Generation can be more reliably prevented, and the mountability can be improved.

In the above embodiment (3), the width w ₂ of the signal line layer 15 and the width w ₃₁ of the signal line layer 32A at the junction E between the high-frequency package 10B and the wiring board 30A are matched. , further width w _g21 and the gap g of the gap g _21
When the width w _{g31 of 31} is matched (w ₂ = w ₃₁ , w _g21
= W _g31 ), but the high-frequency package 10
Signal line layer 15 at the junction E between B and the wiring board 30A
Width w ₂ and the width w ₃₁ of the signal line 32A or gap g _21,
Rather the need to match the width w _g31 width w _g21 and the gap g ₃₁ necessarily, as a decrease in the impedance at the junction E can be sufficiently suppressed, the width w _g21 of the gap g ₂₁ at the junction E are joined Gap other than part E
Greater than the _second width w _g2, and the width w _g31 of the gap g ₃₁ at the junction E is, may be set larger than the width w _g3 of the gap g ₃ except joint E.

In still another embodiment, the width w ₂ of the signal line layer 15 and the width w ₃₁ of the signal line layer 32A at the joint E between the high-frequency package 10B and the wiring board 30A are further reduced. , it can also be a correspondingly only so as to increase the width w _g31 width w _g21 and the gap g ₃₁ of the gap g ₂₁ construction, with such a configuration, the junction E
Can be further suppressed, and the matching of the impedance at the joint E can be further enhanced.

Next, the connection structure between the high-frequency package and the wiring board according to the embodiment (4) will be described. FIG.
FIG. 7 is an exploded schematic view showing an enlarged main part of the high-frequency package and the wiring board for describing a connection structure between the high-frequency package and the wiring board according to the embodiment (4);
(A) is a plan view, (b) is a bottom view. Note that components having the same functions as those of the embodiment (1) are denoted by the same reference numerals, and description thereof will be omitted.

The connection structure between the high-frequency package and the wiring board according to the embodiment (4) is different from the connection structure between the high-frequency package and the wiring board according to the embodiment (1).
This is in the structure of the wiring board 30B.

At a predetermined position on the upper surface 31a of the dielectric substrate constituting the wiring board 30B, a joint E and a region extending from the joint E by a length D ₄ in the length direction of the signal line layer 32B are further provided. The width at F is w ₃₁ , and the width of the other parts is w
_{The third} thin film signal line layer 32B is formed. Around the signal line 32B, and the ground layer 34 is formed via a gap g _31, g _3, coplanar, these
A wave guide is configured. On the other hand, a ground layer 35 is formed on the lower surface 31b of the dielectric substrate.

[0087] the width w _g31 of the gap g ₃₁ that are formed at the junctions E and region F, the width w ₃₁ of the signal line 32B of the junction E are, junction E and region F other than the signal line 32B Width w
Only _three are from narrow set minute, the width w of the gap g ₃
It is set larger than _g3 . Width w of the gap g _31
g31 is a high-frequency package - in consideration of such width w _g2 width w ₂ and the gap g ₂ of the signal line 15 at the junction E of the di-10, is adapted to be set.

The length D ₄ in the area F is 0 <D
It is set in the range of _{4 ≦ λ 0/4 (ε} r2 / 2 + 1/2) 1/2. Therefore, the length D ₄ minutes, it is possible to suppress a decrease in the impedance of the signal line layer 32B in the set gap g ₃₁ partial width is large, the signal line 1
5 and the signal line layer 32B at the junction E can be improved in impedance matching. Incidentally, the length D ₄ is greater than _{λ 0/4 (ε r2 /} 2 + 1/2) 1/2, and the effect of suppressing the decrease in impedance is reduced, suppressing the decrease in the impedance of the outside bonding portion E This is not preferable because the influence of the reflection loss increases and the transmission characteristics deteriorate.

The high-frequency package 1 constructed as described above
In the connection structure between the circuit board 0 and the wiring board 30B, a high-frequency signal (not shown) is input and output similarly to the connection structure between the high-frequency package 10 and the wiring board 30 according to the first embodiment.

According to the connection structure between the high-frequency package 10 and the wiring board 30B according to the above embodiment (4), the width from the joint E to the length of the signal line layer 32B by the length D _{4 is further} increased. by extending the wide area of the gap g _31, Inpi the signal line 32B - it is possible to suppress a decrease of the dance. Therefore, for example, even when the width w _g31 of the gap g _{31 at} the joint E cannot be made large enough to sufficiently suppress the decrease in the impedance, the decrease in the impedance of the signal line layer 32B can be suppressed, and the signal line layer 32B can be suppressed. It is possible to further enhance the impedance matching at the junction E between the signal line 15 and the signal line layer 32B. Further, by extending the length D ₄ minutes a wide gap g _31, the high-frequency package at the time of joining - even di 10 is slightly shifted in the longitudinal direction of the signal line 32B of the wiring substrate 30B, the length it can be securely connected without causing connection failure as long as it is within the range of D _4. Therefore, the connection work between the high-frequency package 10 and the wiring board 30B can be performed more easily, and the occurrence of connection failure such as a short circuit can be further reduced, and the mountability can be further improved. .

[0091] Note that in the embodiment (4), only with respect to the wiring substrate 30B side, wider gap g ₃₁ is the junction E
In yet has been described is extended by the length D ₄ in the longitudinal direction of the signal line 32B, another embodiment from
Similarly, on the high-frequency package 10 side, a gap g ₂₁ (see FIG. 4B) having a large width may be extended from the joint E in the length direction of the signal line layer 15. Alternatively, gaps g ₃₁ and g ₂₁ whose widths are set to be large in both the wiring board 30B and the high-frequency package 10 may extend from the junction E in the length direction of the signal line layers 32B and 15. . In this case, the length D ₄ which extends in the wiring substrate 30B side, the high-frequency package - the sum of the length D ₄ which extends in the di 10 side, the signal line 32B, 15
Is preferably set to 以下 or less of the wavelength of the high-frequency signal propagating through.

Next, the connection structure between the high-frequency package and the wiring board according to the embodiment (5) will be described. FIG.
FIG. 9 is an exploded schematic view showing an enlarged main part of the high-frequency package and the wiring board for describing a connection structure between the high-frequency package and the wiring board according to the embodiment (5);
(A) is a plan view, (b) is a bottom view. Note that components having the same functions as those of the embodiment (1) are denoted by the same reference numerals, and description thereof will be omitted.

[0093] RF package - the predetermined portion of the dielectric substrate top surface 11a of the high-frequency transmission line substrate 20C constituting the di 10C, width film-like signal line 14 of w ₁ is formed. Around the signal line 14 and ground layer 22 is formed via a gap g _1, these by coplanar-web - Bugaido is formed.

Further, the conductor via-side end 14 of the signal line layer 14
a to the wiring board connection side one side surface 20c
a has a configuration in which the ground layer 22 is not formed. The region 22a includes at least a portion opposing the signal line layer 15, and extends from the conductor via side end 14a of the signal line layer 14 having a width set to (w ₁ + 2 × w _g1 ) to the wiring board connection side. and a portion between the up front D ₃ sides 20c, the width _{(w 3 + 2 × w g3} ) line from the front D ₃ of which is set to a wiring board connection side one side 20c board connection side one side 2
0c.

In the high-frequency package 10C, the region 22a
In order to reliably obtain the effect of not forming the ground layer 22, the lid 12A is made of an insulating material, for example, alumina, plastic, or the like, and an adhesive such as glass or resin is used for sealing. Can be

Alternatively, instead of using the lid 12A made of an insulating material, the high-frequency transmission line substrate 20C
A frame-shaped wall of the same material as the dielectric substrate 11 may be formed on the outer peripheral portion by simultaneous firing, and the wall may be sealed with a metal lid or frame. In this case, in order to reliably obtain the effect of not forming the ground layer 22 in the region 22a of the high-frequency package 10C, the height of the frame-shaped wall should be 0.1 mm or more, more preferably 0.2 mm or more. It is preferable to set If the height of the frame-shaped wall is lower than 0.1 mm, the effect of not forming the ground layer 22 in the region 22a cannot be sufficiently exerted due to the influence of the metal lid or the frame, and the impedance of the impedance cannot be reduced. Poor alignment.

The wiring structure of the lower surface 11b of the dielectric substrate of the high-frequency transmission line substrate 20C constituting the high-frequency package 10C is substantially the same as that shown in FIG. 4B. The structure is also the same as that shown in FIG. 4, and a detailed description thereof will be omitted here.

The high-frequency package 1 constructed as described above
In the connection structure between the OC and the wiring board 30A, a high-frequency signal (not shown) is input and output similarly to the connection structure between the high-frequency package 10 and the wiring board 30 according to the first embodiment.

According to the connection structure between the high-frequency package 10C and the wiring board 30A according to the embodiment (5), from the conductor via connection side end 14a of the signal line layer 14 to the wiring board connection side one side face 20c. The ground layer 22 is not formed in the region 22a between the signal line layer 15 and the ground layer 22, and between the signal line layer 32A and the ground layer 2A.
2 can prevent the deterioration of the transmission characteristics particularly in the high-frequency region, achieve impedance matching over the higher-frequency region, and provide a connection structure with more excellent transmission characteristics. can do.

When the lid 12A is made of an insulating material, the deterioration of the transmission characteristics in the high frequency region, which can be obtained by not forming the ground layer 22 in the region 22a, is reduced. The effect of prevention can be reliably obtained.

[0101]

EXAMPLES AND COMPARATIVE EXAMPLES Hereinafter, the transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) were investigated using the high-frequency package and the wiring board according to the examples under the following conditions. Will be described.

In Examples 1 and 2, the transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) in the connection structure between the high-frequency package 10 and the wiring board 30 according to Embodiment (1). )investigated.

In Comparative Example 1, the conductor via 3 of the wiring board was used.
6a and 36b were not formed at all, Comparative Example 2 was formed without conductor vias 24a and 24b of the high-frequency package, and Comparative Example 3 was formed with conductor vias 24a and 24b of the high-frequency package. , And the conductor via 3 of the wiring board
6a and 36b are not formed, and are selected.
The transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of the connection structure between the high-frequency package and the wiring board were investigated.

The transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of each connection structure are TLM (Tran).
The analysis was performed by three-dimensional electromagnetic field simulation using the smission line modeling method.

The thickness T ₁ , the relative permittivity ε _r1 of the dielectric substrate 11 and the width w ₁ , w of the signal line layers 14 and 15 of the high-frequency package 10 according to the first and second embodiments and the first to third comparative examples. ₂ , the gap g between the signal line layers 14 and 15 and the ground layers 22 and 23
₁ , g ₂ , the thickness T ₂ of the dielectric substrate 31 of the wiring substrate 30,
The relative permittivity ε _r2 , the width w _{3 of} the signal line layer 32, and the gap g ₃ between the signal line layer 32 and the ground layer 34 are shown in Table 1 below.
It was shown to.

[0106]

[Table 1]

Further, the distance W _p between the conductor vias 24a and 24b of the high-frequency package 10 according to the first and second embodiments and the comparative examples 1, 2 and 3, and the conductor vias 35a and 35b of the wiring board 10
It is shown in Table 2 below and the interval W _b, respectively. The width D ₃ of the junction, Example 1, Comparative Example 1 to 3, 0.3 m
m, and in Example 2, it was set to 0.2 mm.

[0108]

[Table 2]

A simulation was performed under the conditions in the first embodiment, and as a result of analysis, the transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) shown in FIG. 7 were obtained. As is clear from FIG. 7, in the connection structure between the high-frequency package and the wiring board according to the first embodiment, S ₂₁ > −1.0d until the vicinity of more than 40 GHz affected by the via row interval.
B, had excellent transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of S ₁₁ <−18 dB.

FIG. 8 shows a transmission characteristic (insertion loss S ₂₁ ) of a connection structure between a high-frequency package and a wiring board using a network analyzer by preparing a sample satisfying the conditions in the first embodiment. And reflection characteristics (reflection loss S
₁₁ ) shows the measurement results. As is clear from FIG. 8, there is no ripple up to about 48 GHz,
Up to the vicinity of Hz, it had excellent transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of S ₂₁ > −1.5 dB and S ₁₁ <−18 dB.

FIG. 9 shows a transmission characteristic (insertion loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions of Comparative Example 1 and analyzing the result.
Frequency package - Comparative Example 1 has a conductive via columns only di, from a low frequency band, it has been gradually tendency that the insertion loss S ₂₁ is increased in the vicinity 40 GHz, S ₂₁ is -
It has reached 3.0 dB, and the transmission characteristics have started to deteriorate.

FIG. 10 shows a transmission characteristic (insertion loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions of Comparative Example 2 and analyzing the result. In Comparative Example 2 having a conductive via columns only in the wiring substrate, from a low frequency band in the same manner as in Comparative Example 1, and gradually insertion loss S ₂₁ is increased in the vicinity 40 GHz, S ₂₁
Has reached -2.5 dB, and the transmission characteristics have started to deteriorate.

FIG. 11 shows a transmission characteristic (insertion loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions of Comparative Example 3 and analyzing the result. Frequency package - Comparative Example 3 having no conductive via columns in either di- and wiring board, shows further from significantly lower frequency band than the Comparative Examples 1 and 2, the tendency of the insertion loss S ₂₁ is greater The transmission characteristics deteriorated remarkably.

FIG. 12 shows a transmission characteristic (insertion loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions of the second embodiment and analyzing the result. In Example 2, in which further made to correspond to the high frequency as W _p = W _b = 0.61mm. As is clear from FIG. 12, in the connection structure between the high-frequency package and the wiring board according to the second embodiment, at a frequency of about 70 GHz or less, S ₂₁ > −.
It had excellent transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of 2.0 dB and S ₁₁ <−14 dB.

FIG. 13 shows a transmission characteristic (insertion loss S ₂₁ ) in a connection structure between a high-frequency package and a wiring board using a network analyzer by preparing a sample satisfying the conditions in the second embodiment. And the results of measuring reflection characteristics (reflection loss S ₁₁ ). Reflection loss S ₁₁ is,
Simulator shown in FIG. 12 - although the tendency is seen that slightly degraded from Deployment result, the insertion loss S ₂₁ is 0-8
In the entire frequency band up to around 2 GHz, no noticeable ripple was generated, the transmission loss was reduced, and the transmission characteristics were excellent.

Next, the high-frequency packages according to Examples 3 to 6
The connection structure between the device and the wiring board will be described. Example 1
In, the width D ₃ of the junction E has been described when it is set to 0.3 mm, in Example 3-5, the width D ₃ in yet junction E also examine effects on the reflection and transmission characteristics Therefore, the width D ₃ of the joint E is set to 0.2, 0.3,
Investigations were also made on the transmission characteristics when changing to 0.4 and 0.5 mm.

In the third embodiment, the connection structure between the high-frequency package 10 and the wiring board 30 according to the embodiment (1) is described. In the fourth embodiment, the connection structure between the high-frequency package 10B and the high-frequency package 10B according to the third embodiment is used. In Example 5, the connection structure between the high-frequency package 10 and the wiring substrate 30B according to Embodiment (4) was used as the connection structure with the wiring substrate 30A.

[0118] In Example 6, the high-frequency package according to the embodiment (5) - with a connection structure between di 10C and the wiring substrate 30A, the width D ₃ of the junction E and 0.3 mm,
Comparison with Example 4 was performed.

The transmission characteristics (insertion loss S ₂₁ ) and the reflection characteristics (reflection loss S ₁₁ ) of each connection structure of Examples 3 to 6 were analyzed by three-dimensional electromagnetic field simulation using the TLM method. .

High-frequency Package 1 According to Embodiments 3 to 6
0, 10B, and 10C, the thickness T ₁ of the dielectric substrate 11, the relative permittivity ε _r1 , the widths w ₁ and w _{2 of} the signal line layers 14 and 15, and the relationship between the signal line layers 14 and 15 and the ground layers 22 and 23. The widths w _g1 and w _g2 of the gaps g ₁ and g _{2 therebetween} , the width w _g21 of the gap g _{21 at} the junction, the thickness T ₂ of the dielectric substrate 31 of the wiring boards 30, 30A and 30B, and the relative permittivity ε _r2 , signal line layers 32, 32
A, 32B width w ₃ , signal line layers 32, 32 at junction E
Table 3 below shows the width w ₃₁ of A, 32B, the width w _g3 of the gap g ₃ between the signal line layers 32, 32A, 32B and the ground layer 34, and the width w _g31 of the gap g _{31 at} the junction E. .

[0121]

[Table 3]

The high-frequency packages according to Examples 3 to 6
Di 10 and 10B, shown conductive vias 24a of 10C, distance W _p of 24b, and the wiring board 30, 30A, conductive via 35a of 30B, an interval W _b and 35b, respectively Table 4 below. In Examples 3-6, and if the conductor vias 24a, spacing D ₁ of the and if the conductor vias 24b are 0.35 mm,
Spacing D between conductive vias 36a and conductive vias 36b
₂ was set to 0.70 mm.

[0123]

[Table 4]

Simulation was performed under the conditions in the third embodiment, and as a result of analysis, transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) shown in FIG. 14 were obtained. As apparent from FIG. 14, the high-frequency package according to the third embodiment - In the connection structure between di and the wiring substrate, 0.2 mm width D ₃
As increased to 0.5mm from the reflection loss S ₁₁ of the following intermediate frequency band 50GHz tended to increase. This is because as the width D ₃ of the joint E increases,
Presumably because the reflection loss S ₁₁ at the junction E are less likely it is consistent of increases and impedance. However, in the frequency band of 40 GHz or less, any of S ₂₁
Good transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of> −1.0 dB and S ₁₁ <−10 dB were obtained.

FIG. 15 shows a transmission characteristic (insertion loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions in the fourth embodiment and analyzing the result. The width w _g21 of the gap g _{21 at} the junction E, g ₃₁ ,
In the _{fourth embodiment in} which w _g31 is set to be larger than the widths w _g2 and w _g3 of the gaps g ₂ and g ₃ , the width D ₃ of the joint E is set to 0.2.
be increased to 0.5mm from mm, the following intermediate frequency band 40 GHz, not observed increase in return loss S ₁₁ as in Example 3, both S _21> -0.5 dB, S
_It had extremely excellent transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of ₁₁ <−20 dB.

In the fourth embodiment, the high-frequency package 1
0B, the width w _g21 of the gap g ₂₁ of the joint E is _set to 0.
By setting it to 395 mm, a portion where the conductor vias 24a and 24b in the joint portion E is not covered by the ground layer 23 is generated. However, the space W _p between the conductor vias 24a and 24b in this portion is covered so as to be covered by the ground layer 23. Is not preferable because the maximum signal frequency that can be transmitted decreases.

FIG. 16 shows a transmission characteristic (charge loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions in the fifth embodiment and analyzing the result. The junction E of the wiring board 30B and the region F (D ₄ = 0.2
In Example 5 the gap g ₃₁ of width w _g31 in the set mm) is formed, even if the width D ₃ of the junction E is increased from 0.2mm to 0.5 mm, the following intermediate frequency band 40GHz Then, the change is small in both transmission characteristics and reflection characteristics,
In each case, excellent transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) of S ₂₁ > −0.5 dB and S ₁₁ <−16 dB were obtained.

[0128] In comparison to Example 4, towards the Example 5, the reflection loss S ₁₁ is increased before and after 3DB～5dB, the reflection characteristic is deteriorated slightly, as this factor, the following It is possible. In Example 5, the high-frequency package - than the width w _g31 of the gap g ₃₁ of width w _g2 of the gap g ₂ of the junction E wiring board 30B di 10 0.185
Since the distance is smaller by 1 mm, the impedance at the joint E is lower than that in the fourth embodiment. On the other hand, Example 5
Since the width w _g31 of the gap g ₃₁ in the region F of the wiring board 30B is set as large as 0.395 mm, a decrease in the impedance of the signal line layer 32B in this region F can be suppressed. However, in the fifth embodiment, it is considered that the reflection characteristics slightly deteriorated due to the influence of the increased discontinuity of the impedance of the signal line layer 32B as compared with the fourth embodiment.

FIG. 17 shows a transmission characteristic (insertion loss S ₂₁ ) and a reflection characteristic (reflection loss S ₁₁ ) obtained by performing a simulation under the conditions in the sixth embodiment and analyzing the result. In the sixth embodiment using the high-frequency package 10C in which the ground layer 22 is not formed in the region 22a, 48 GHz is used.
Although the reflection loss S _{11 at} z or less is larger than that of the fourth embodiment, the insertion loss S ₂₁ is S ₂₁ > −1.0 d in both cases.
B. On the other hand, further comprising a high frequency band than 48 GHz, towards the Example 6, the smaller the reflection loss S ₁₁ than in Example 4, also, the insertion loss S ₂₁ is, 60GH
Up to z, S ₂₁ > −1.5 dB, and on the higher frequency side, excellent transmission characteristics (insertion loss S ₂₁ ) and reflection characteristics (reflection loss S ₁₁ ) were obtained.

As is clear from the above results, Examples 1 to
In the connection structure between the high-frequency package and the wiring board according to No. 6, the spacing between the conductor via rows of the high-frequency package and the spacing between the conductor via rows of the wiring board are determined by the relative permittivity of the dielectric substrate and the relative permittivity of the wiring board. Rate, the transmission characteristics (insertion loss S ₂₁ ) at the connection point are suppressed from deteriorating.
Excellent high-frequency transmission characteristics were obtained.

In the fourth embodiment, the gap g ₂₁ of the high-frequency package 10B at the junction E and the wiring board 3
By _setting the width w _g31 of the gap g ₃₁ of 0 A to be larger than the widths w _g2 and w _g3 of the gaps g ₂ and g ₃ other than the junction E, the signal line layer 15 at the junction E is
It was possible to suppress a decrease in impedance of No. 32, and to further improve the consistency of the impedance at the joint E. In particular, it is possible to further suppress the increase in return loss S ₁₁ in the intermediate frequency band, it was possible to further improve the transmission characteristics.

[0132] Also in the fifth embodiment, by the extended area of the gap g ₃₁ of length D ₄ by the width further the length of the signal line 32B of the junction E of the wiring board 30B is set larger, A decrease in the impedance of the signal line layer 32B can be suppressed, and the impedance matching at the junction E between the signal line layer 15 and the signal line layer 32B can be improved.

In the sixth embodiment, by using the high-frequency package 10C in which the ground layer 22 is not formed in the region 22a, the signal line layer 15 on the higher frequency side is used.
Thus, the impedance matching at the joint E can be improved, and the deterioration of the transmission characteristics particularly in a high frequency region can be prevented.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional perspective view schematically showing a connection structure between a high-frequency package and a wiring board according to Embodiment (1) of the present invention.

FIGS. 2A and 2B are enlarged schematic views showing a main part of a connection structure between a high-frequency package and a wiring board according to the embodiment (1), wherein FIG. ) Is a plan view, (c)
Is a bottom view.

FIGS. 3A and 3B are enlarged schematic views showing a main part of a connection structure between a high-frequency package and a wiring board according to the embodiment (2), wherein FIG. , (C) is a bottom view.

FIG. 4 is an exploded schematic view showing an enlarged main part of the high-frequency package and the wiring board for describing a connection structure between the high-frequency package and the wiring board according to the embodiment (3); (A) is a plan view, (b) is a bottom view.

FIG. 5 is an exploded schematic view showing an enlarged main part of the high-frequency package and the wiring board for describing a connection structure between the high-frequency package and the wiring board according to the embodiment (4); (A) is a plan view, (b) is a bottom view.

FIG. 6 is an exploded schematic view showing an enlarged main part of the high-frequency package and the wiring board for describing a connection structure between the high-frequency package and the wiring board according to the embodiment (5); (A) is a plan view, (b) is a bottom view.

FIG. 7 is a graph showing a simulation result of a connection structure between the high-frequency package and the wiring board according to the first embodiment.

FIG. 8 is a graph showing a network analyzer measurement result of the connection structure between the high-frequency package and the wiring board according to the first embodiment.

FIG. 9 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to Comparative Example 1.

FIG. 10 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to Comparative Example 2.

FIG. 11 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to Comparative Example 3.

FIG. 12 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to the second embodiment.

FIG. 13 is a graph showing the results of a network analyzer measurement of the connection structure between the high-frequency package and the wiring board according to the second embodiment.

FIG. 14 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to a third embodiment.

FIG. 15 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to a fourth embodiment.

FIG. 16 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to a fifth embodiment.

FIG. 17 is a graph showing a simulation result of a connection structure between a high-frequency package and a wiring board according to a sixth embodiment.

18A and 18B are schematic views showing a conventional connection structure between a high-frequency package and a wiring board, wherein FIG.
(B) is a perspective view taken along the line BB in (a).

FIG. 19 is a side sectional view schematically showing a connection structure between another conventional high-frequency package and a wiring board.

20A and 20B are diagrams schematically showing a connection structure between the high-frequency package of FIG. 19 and a wiring board, wherein FIG. 20A is a top view of the high-frequency package and FIG. Figure,
(C) is a top view of the wiring board.

[Explanation of symbols]

 10, 10A, 10B, 10C High-frequency package 20, 20A, 20B, 20C High-frequency transmission line board 24a, 24b, 36a, 36b Conductive via 22, 22, 34, 35 Ground layer 30, 30A, 30B Wiring board

Claims (7)

[Claims] 1. An interval between first conductor via rows connecting first ground layers formed on both main surfaces of a high-frequency transmission line substrate constituting a high-frequency package, and the high-frequency package is mounted. In order to enhance the high-frequency transmission characteristics between the high-frequency transmission line substrate and the wiring substrate, the distance between the second conductor via rows connecting the second ground layers formed on both main surfaces of the wiring substrate A connection structure between a high-frequency package and a wiring board, wherein the connection structure is set in consideration of a relative permittivity of the high-frequency transmission line board and a relative permittivity of the wiring board. 2. The high-frequency transmission line substrate has a relative dielectric constant of ε.
_r1 , the relative permittivity of the wiring board is ε _r2 , the wavelength in a high-frequency vacuum propagating through the signal line is λ ₀ , the interval between the first conductor via rows is W _p , and the second conductor via row is If the distance was _{W b, W p <λ 0} / (2 × ε r1 1/2), and W _b <λ ₀ / W _p and W _b is set within the range of (2 × ε _r2 ^1/2) 2. The connection structure between a high-frequency package and a wiring board according to claim 1, wherein: 3. The high-frequency package is provided on one main surface side of the high-frequency transmission line board, between a first signal line and the first signal line and the first ground layer. A first gap having a second end connected to the wiring substrate on the other main surface side of the high-frequency transmission line substrate, and a second end connected to the first signal line via a third conductive via; 2 signal lines, and a second gap provided between the second signal lines and the first ground layer, wherein the wiring board is provided on a bonding surface side with the high-frequency package. A third signal line; and a third gap provided between the third signal line and the second ground layer, wherein a third gap is provided at a junction between the high-frequency package and the wiring board. The width of the second gap is set to be larger than the width of the second gap other than the joint. The high-frequency package according to claim 2, wherein the width of the third gap at the joint is set to be larger than the width of the third gap other than the joint. -Connection structure between the die and the wiring board. 4. In the high-frequency transmission line substrate, the length of the second gap portion, whose width is set to be larger in the length direction of the second signal line from the junction, is D _p , If the length of the third gap part width in the length direction of the further the third signal line from the junction is set larger and the _{D b, 0 <D p ≦} λ 0/4 (ε r1 / 2 + 1/2) ^1/2, and / or _{0 <D b ≦ λ 0/} 4 (ε r2 / 2 + 1/2)
4. The connection structure between a high-frequency package and a wiring board according to claim 3, wherein a relationship of ^1/2 is satisfied. 5. The first high-frequency transmission line substrate includes a first region in a predetermined area between an end of the first signal line on the third conductor via connection side and one side surface of the high frequency transmission line substrate on the wiring substrate connection side. 5. The connection structure between a high-frequency package and a wiring board according to claim 3, wherein a ground layer is not formed. 6. The predetermined region portion is opposed to the second signal line at least from an end of the first signal line on the third conductor via connection side to one side surface of the wiring board connection side. 6. The connection structure between a high-frequency package and a wiring board according to claim 5, including a portion. 7. The high-frequency package according to claim 1, wherein the predetermined area portion is the high-frequency package
In the case of the sealing portion, the lid for sealing the high-frequency package or the frame formed in the sealing portion is formed using an insulating material. A connection structure between a high-frequency package and a wiring board according to claim 5 or 6.