JP2002313811A5 - - Google Patents
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- Publication number
- JP2002313811A5 JP2002313811A5 JP2002020801A JP2002020801A JP2002313811A5 JP 2002313811 A5 JP2002313811 A5 JP 2002313811A5 JP 2002020801 A JP2002020801 A JP 2002020801A JP 2002020801 A JP2002020801 A JP 2002020801A JP 2002313811 A5 JP2002313811 A5 JP 2002313811A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- semiconductor
- semiconductor device
- manufacturing
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 81
- 238000000034 method Methods 0.000 claims 22
- 230000004888 barrier function Effects 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 17
- 238000010438 heat treatment Methods 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 12
- 239000013078 crystal Substances 0.000 claims 10
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 239000003054 catalyst Substances 0.000 claims 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 238000002425 crystallisation Methods 0.000 claims 5
- 230000008025 crystallization Effects 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000001737 promoting effect Effects 0.000 claims 4
- 229910052724 xenon Inorganic materials 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 230000003197 catalytic effect Effects 0.000 claims 3
- 238000005247 gettering Methods 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 3
- 229910052753 mercury Inorganic materials 0.000 claims 3
- 229910001507 metal halide Inorganic materials 0.000 claims 3
- 150000005309 metal halides Chemical class 0.000 claims 3
- 230000005855 radiation Effects 0.000 claims 3
- 229910052708 sodium Inorganic materials 0.000 claims 3
- 239000011734 sodium Substances 0.000 claims 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000005485 electric heating Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002020801A JP4071005B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-19367 | 2001-01-29 | ||
| JP2001019367 | 2001-01-29 | ||
| JP2002020801A JP4071005B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002313811A JP2002313811A (ja) | 2002-10-25 |
| JP2002313811A5 true JP2002313811A5 (https=) | 2005-08-11 |
| JP4071005B2 JP4071005B2 (ja) | 2008-04-02 |
Family
ID=26608397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002020801A Expired - Fee Related JP4071005B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4071005B2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7374976B2 (en) | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
| US7538350B2 (en) | 2001-12-28 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film device |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003204067A (ja) | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| EP1326273B1 (en) | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4011344B2 (ja) | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
| US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TW200302511A (en) | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| KR100979926B1 (ko) | 2002-03-05 | 2010-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체소자 및 그것을 사용한 반도체장치 |
| US6847050B2 (en) | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
| US6930326B2 (en) | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
| JP4115252B2 (ja) * | 2002-11-08 | 2008-07-09 | シャープ株式会社 | 半導体膜およびその製造方法ならびに半導体装置およびその製造方法 |
| JP5046464B2 (ja) * | 2002-12-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体記憶素子の作製方法 |
| US7015496B2 (en) * | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
| US20060202269A1 (en) | 2005-03-08 | 2006-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic appliance having the same |
| KR101221131B1 (ko) * | 2006-11-30 | 2013-01-18 | 엘지디스플레이 주식회사 | 폴리실리콘 반도체 소자의 제조 방법 |
| US7791172B2 (en) * | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| CN101593686B (zh) * | 2008-05-30 | 2011-10-05 | 中芯国际集成电路制造(北京)有限公司 | 金属栅极形成方法 |
| KR102729031B1 (ko) * | 2020-04-09 | 2024-11-14 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
-
2002
- 2002-01-29 JP JP2002020801A patent/JP4071005B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7538350B2 (en) | 2001-12-28 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film device |
| US7374976B2 (en) | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
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