JP2002299371A - Manufacturing method of electronic device and the electronic device - Google Patents

Manufacturing method of electronic device and the electronic device

Info

Publication number
JP2002299371A
JP2002299371A JP2001095639A JP2001095639A JP2002299371A JP 2002299371 A JP2002299371 A JP 2002299371A JP 2001095639 A JP2001095639 A JP 2001095639A JP 2001095639 A JP2001095639 A JP 2001095639A JP 2002299371 A JP2002299371 A JP 2002299371A
Authority
JP
Japan
Prior art keywords
electronic component
electrode
gold
protruding
protruding electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001095639A
Other languages
Japanese (ja)
Inventor
Mitsunori Ishizaki
光範 石崎
Tsuneo Hamaguchi
恒夫 濱口
Yoichi Kitamura
洋一 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001095639A priority Critical patent/JP2002299371A/en
Publication of JP2002299371A publication Critical patent/JP2002299371A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
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    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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    • H01L2224/1184—Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
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Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device which can stably manufacture an electronic device, having stably high junction strength, and to provide an electronic device. SOLUTION: The manufacturing method of an electronic device comprises a process for forming a projection electrode 4a, by thermally compressing a metal ball 3a consisting of gold or gold alloy on an electrode 1a of a first electronic component 1, while applying ultrasonic wave 6; a process for forming a projection electrode 4b by thermally compressing the metal ball 3a consisting of gold or gold alloy on an electrode 2a of a second electronic component 2, while applying ultrasonic wave 6; and a process for positioning the first electronic component 1 and the second electronic component 2, so that a projection electrode 4a on the first electronic component 1 and the projection electrode 4b on the second electronic component 2 correspond each other and jointing the first electronic component 1 and the second electronic component 2 by heating and pressing the projection electrode 4a of the first electronic component 1 and the projection electrode 4b of the second electronic component 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、複数の電子部品を
突起電極を介して接続する電子装置の製造方法及び電子
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic device for connecting a plurality of electronic components via bump electrodes, and an electronic device.

【０００２】[0002]

【従来の技術】多端子で狭ピッチの電極を有する電子部
品を実装する手法として、フリップチップ方式と呼ばれ
る方式がよく用いられている。このフリップチップ方式
は、金属ワイヤの先端に形成した金属ボールを超音波を
印加しながら熱圧着し、その後、金属ワイヤを切断して
突起電極を形成し、この突起電極と金属電極とを熱圧着
するものである。このフリップチップ方式には主に２つ
の方法がある。2. Description of the Related Art A method called a flip chip method is often used as a method for mounting an electronic component having a multi-terminal, narrow-pitch electrode. In this flip chip method, a metal ball formed at the tip of a metal wire is thermocompressed while applying ultrasonic waves, and then the metal wire is cut to form a protruding electrode, and the protruding electrode and the metal electrode are thermocompressed. Is what you do. There are mainly two methods for the flip chip method.

【０００３】まず、第１のフリップチップ方式を説明す
る。図９は第１のフリップチップ方式による電子装置の
製造方法を示す図で、例えば“超高周波帯モジュールの
例（２）−ミリ波通信用モジュールとフリップチップボ
ンディング技術―”（大畑恵一、１９９９年電子情報通
信学会総合大会、ｐｐ４８８−４８９、１９９９）に開
示されている電子装置の製造方法を示す図である。First, the first flip chip method will be described. FIG. 9 is a diagram illustrating a method of manufacturing an electronic device according to the first flip-chip method. For example, “Example of ultra-high frequency band module (2) —Millimeter wave communication module and flip-chip bonding technology—” (Keichi Ohata, 1999) FIG. 3 is a diagram illustrating a method of manufacturing an electronic device disclosed in the IEICE General Conference, pp. 488-489, 1999).

【０００４】図９（ａ）に示すように、キャピラリツー
ル１０１を用いて、金ワイヤ１０２の先端に形成した金
ボール１０３を超音波振動１０４を印加しながら第１の
電子部品１０５の金属電極１０５ａ上に熱圧着した後、
図９（ｂ）に示すように、金ボール１０３から金ワイヤ
１０２を切り離して金の突起電極１０６を形成し、図９
（ｃ）に示すように、突起電極１０６と第２の電子部品
１０７の金属電極１０７ａとを位置合わせする。なお、
第２の電子部品１０７の金属電極１０７ａは表面に金が
形成された金属電極である。そして、図９（ｄ）に示す
ように、加熱した状態で金属電極１０７ａを突起電極１
０６に押し付けて固相接合して電子装置を製造する。[0004] As shown in FIG. 9 (a), a gold ball 103 formed at the tip of a gold wire 102 is applied to a metal electrode 105 a of a first electronic component 105 using a capillary tool 101 while applying ultrasonic vibration 104. After thermocompression on top,
As shown in FIG. 9B, the gold wire 102 is cut off from the gold ball 103 to form a gold projecting electrode 106.
As shown in (c), the bump electrode 106 and the metal electrode 107a of the second electronic component 107 are aligned. In addition,
The metal electrode 107a of the second electronic component 107 is a metal electrode having gold formed on the surface. Then, as shown in FIG. 9 (d), the metal electrode 107a is
06 and solid-state bonding is performed to manufacture an electronic device.

【０００５】固相接合は、加圧時の接合金属同士の変形
によって接触界面の汚染層が除去できた箇所に接合が生
じるため、金属電極表面の汚染が少ない方が容易に高い
接合強度が得られる。すなわち、金属電極表面の汚染状
態によって接合強度が変化する。よって、上記電子装置
でも金属電極表面の汚染が少ない箇所で接合がなされる
ことになる。[0005] In the solid phase bonding, since the contaminant layer at the contact interface can be removed at a portion where the contaminated layer has been removed due to the deformation of the bonding metals under pressure, the lower the contamination on the metal electrode surface, the higher the bonding strength can be easily obtained. Can be That is, the bonding strength changes depending on the contamination state of the metal electrode surface. Therefore, even in the electronic device described above, bonding is performed at a location where contamination of the metal electrode surface is small.

【０００６】次に、第２のフリップチップ方式を説明す
る。図１０は第２のフリップチップ方式による電子装置
の製造方法を示す図で、例えば“超音波併用熱圧着によ
るフリップチップボンディング”（富岡他、３ｒｄ Ｓ
ｙｍｐｏｓｉｕｍ ｏｎ Ｍｉｃｒｏｊｏｉｎｉｎｇ
ａｎｄ Ａｓｓｅｍｂｌｙ ＴｅｃｈｎｏｌｏｇｙＥｌ
ｅｃｔｒｏｎｉｃｓ、Ｆｅｂｒｕａｒｙ ６−７、１９
９７、Ｙｏｋｏｈａｍａ）に開示されている電子装置の
製造方法を示す図である。Next, the second flip chip method will be described. FIG. 10 is a diagram showing a method of manufacturing an electronic device according to the second flip-chip method. For example, “flip-chip bonding by thermocompression combined with ultrasonic waves” (Tomioka et al., 3rd S.
ymposium on Microjoining
and Assembly TechnologyEl
electronics, February 6-7, 19
97, a method of manufacturing an electronic device disclosed in Yokohama).

【０００７】図１０（ａ）に示すように、第１の電子部
品１１１の電極１１１ａと第２の電子部品１１２の電極
１１２ａ上に形成した金の突起電極１１３とを位置合わ
せし、その後、図１０（ｂ）に示すように、加熱した状
態で金の突起電極１１３を金属電極１１１ａに押し付け
るとともに、超音波振動１１４を印加して金の突起電極
１１３と金属電極１１１ａとを固相接合して電子装置を
製造する。As shown in FIG. 10A, the electrode 111a of the first electronic component 111 and the gold projecting electrode 113 formed on the electrode 112a of the second electronic component 112 are aligned with each other. As shown in FIG. 10B, the gold projection electrode 113 is pressed against the metal electrode 111a in a heated state, and the ultrasonic projection 114 is applied to solid-state join the gold projection electrode 113 and the metal electrode 111a. Manufacture electronic devices.

【０００８】[0008]

【発明が解決しようとする課題】第１のフリップチップ
方式では、固相接合により電極が接続されており、固相
接合が金属電極表面の汚染状態によって接合強度が変化
するので、金と金との組み合わせ以外の金属同士を接合
する場合、主に接合界面の金属酸化物が接合の妨げとな
って高い接合強度が得られない問題があった。In the first flip-chip method, electrodes are connected by solid-phase bonding, and the solid-state bonding changes the bonding strength depending on the contamination state of the metal electrode surface. When metals other than the combination described above are joined together, there has been a problem that a metal oxide at a joining interface mainly hinders joining and high joining strength cannot be obtained.

【０００９】また、金と金とを接合する場合でも、金は
形成状況やその後の搬送状況および保管状況によって表
面の有機物汚染の状態に差が生じ、接合強度が大きくば
らつく問題があった。[0009] Further, even when gold is bonded to gold, there is a problem in that the state of organic matter contamination on the surface varies depending on the formation state, the subsequent transportation state and the storage state, and the bonding strength varies greatly.

【００１０】一方、第２のフリップチップ方式では、超
音波振動で接合界面の汚染を除去しながら固相接合を行
うことで、前述の課題は改善しているが、この方式では
全ての電極を一括接合するために大きな超音波振動を印
加しなければならず、化合物半導体素子のように脆弱な
電子部品では、実装時に破損する問題があった。On the other hand, in the second flip-chip method, the above-mentioned problem is solved by performing solid-phase bonding while removing contamination at the bonding interface by ultrasonic vibration. However, in this method, all electrodes are used. Large ultrasonic vibrations must be applied for batch joining, and there is a problem that a fragile electronic component such as a compound semiconductor element is damaged during mounting.

【００１１】さらに、電極の数が多くなると全ての電極
に均一に超音波振動を伝達できず、電極間で接合強度が
ばらつく問題があった。Further, when the number of electrodes is increased, ultrasonic vibration cannot be transmitted uniformly to all the electrodes, and there is a problem that the bonding strength varies between the electrodes.

【００１２】本発明は上記のような課題を解決するため
になされたもので、安定して高い接合強度を有する電子
装置を安定して製造することができる電子装置の製造方
法及び電子装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and provides a method of manufacturing an electronic device and an electronic device capable of stably manufacturing an electronic device having a high bonding strength. The purpose is to do.

【００１３】[0013]

【課題を解決するための手段】本発明にかかる電子装置
の製造方法は、第１の電子部品の電極上に金または金合
金からなる金属ボールを超音波を印加しながら熱圧着し
突起電極を形成する工程と、第２の電子部品の電極上に
金または金合金からなる金属ボールを超音波を印加しな
がら熱圧着し突起電極を形成する工程と、上記第１の電
子部品上の突起電極と上記第２の電子部品上の突起電極
とが対応するように上記第１の電子部品と上記第２の電
子部品とを位置合わせし、上記第１の電子部品の突起電
極と上記第２の電子部品の突起電極とを加熱しながら押
し付けて上記第１の電子部品と上記第２の電子部品とを
接合する工程とを含んでいる。According to a method of manufacturing an electronic device according to the present invention, a metal ball made of gold or a gold alloy is thermocompression-bonded to an electrode of a first electronic component while applying ultrasonic waves to form a projecting electrode. Forming, forming a protruding electrode by thermocompression bonding a metal ball made of gold or a gold alloy on the electrode of the second electronic component while applying ultrasonic waves, and forming a protruding electrode on the first electronic component. The first electronic component and the second electronic component are aligned so that the projection electrode on the second electronic component corresponds to the projection electrode on the second electronic component, and the projection electrode of the first electronic component and the second electronic component are aligned. And pressing the projecting electrode of the electronic component while heating to join the first electronic component and the second electronic component.

【００１４】また、第１の電子部品上に形成される突起
電極の径と、第２の電子部品上に形成される突起電極の
径とが異なるようにしてもよい。Further, the diameter of the protruding electrode formed on the first electronic component may be different from the diameter of the protruding electrode formed on the second electronic component.

【００１５】また、位置合わせの前に、第１又は第２の
電子部品上に形成された突起電極の先端に平坦部を形成
するようにしてもよい。Before the positioning, a flat portion may be formed at the tip of the protruding electrode formed on the first or second electronic component.

【００１６】また、突起電極の先端を加熱しながら平坦
部を形成してもよい。Further, a flat portion may be formed while heating the tip of the protruding electrode.

【００１７】また、第１及び第２の電子部品がそれぞれ
複数の電極を有するようにし、各電極毎に金または金合
金からなる金属ボールを超音波を印加しながら熱圧着し
上記複数の電極上に複数の突起電極を形成するようにし
てもよい。Further, the first and second electronic parts each have a plurality of electrodes, and a metal ball made of gold or a gold alloy is thermocompression-bonded to each of the electrodes while applying ultrasonic waves to each of the plurality of electrodes. A plurality of protruding electrodes may be formed at the same time.

【００１８】さらに、突起電極を形成する工程が、第１
又は第２の電子部品の電極上に金または金合金からなる
第１の突起電極を形成する工程と、この第１の突起電極
上に金または金合金からなる金属ボールを超音波を印加
しながら熱圧着し第２の突起電極を形成する工程とを含
むようにしてもよい。Further, the step of forming the protruding electrode includes the first step.
Alternatively, a step of forming a first protruding electrode made of gold or a gold alloy on the electrode of the second electronic component, and forming a metal ball made of gold or a gold alloy on the first protruding electrode while applying ultrasonic waves. Thermocompression bonding to form a second projecting electrode.

【００１９】また、本発明にかかる電子装置は、電極を
有する第１の電子部品と、上記第１の電子部品に対向し
て配置され上記第１の電子部品の電極に対応する位置に
電極を有する第２の電子部品と、上記第１の電子部品の
電極上に形成されその形状が球を押しつぶしたような形
状をしている第１の導電体と、上記第１の導電体と電気
的に接続されるように上記第２の電子部品の電極上に形
成されその形状が球を押しつぶしたような形状をしてお
りその径が上記第１の導電体の径と異なる第２の導電体
とを備えている。Further, the electronic device according to the present invention includes a first electronic component having an electrode, and an electrode disposed at a position corresponding to the electrode of the first electronic component which is disposed to face the first electronic component. A second electronic component, a first conductor formed on an electrode of the first electronic component, the first conductor having a shape like a crushed sphere, and an electrical connection between the first conductor and the first conductor. A second conductor formed on the electrode of the second electronic component so as to be connected to the second conductor and having a shape like a crushed sphere and having a diameter different from that of the first conductor And

【００２０】[0020]

【発明の実施の形態】以下、本発明の実施の一形態を説
明する。 実施の形態１．図１、図２はこの実施の形態１による電
子装置の製造方法を示す図である。図において、１は第
１の電子部品、１ａは第１の電子部品１の金属電極、２
は第２の電子部品、２ａは第２の電子部品２の金属電
極、３は金ワイヤ、３ａは金ボール、４ａは電極１ａ上
に形成された金の突起電極、４ｂは電極２ａ上に形成さ
れた金の突起電極、５はキャピラリツール、６は超音波
振動である。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below. Embodiment 1 FIG. 1 and 2 are views showing a method for manufacturing an electronic device according to the first embodiment. In the figure, 1 is a first electronic component, 1a is a metal electrode of the first electronic component 1, 2
Is a second electronic component, 2a is a metal electrode of the second electronic component 2, 3 is a gold wire, 3a is a gold ball, 4a is a gold protruding electrode formed on the electrode 1a, and 4b is formed on the electrode 2a. The gold projecting electrode 5 is a capillary tool, and 6 is an ultrasonic vibration.

【００２１】電子装置を製造するには、まず、図１
（ａ）に示すように、金ワイヤ３の先端に形成した金ボ
ール３ａを超音波振動６を印加しながら第１の電子部品
１の金属電極１ａに熱圧着し、金ワイヤを切断すること
で、図１（ｂ）に示すように第１の電子部品１の金属電
極１ａ上に金の突起電極４ａを形成する。To manufacture an electronic device, first, FIG.
As shown in (a), the gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 1a of the first electronic component 1 while applying the ultrasonic vibration 6, and the gold wire is cut. As shown in FIG. 1B, a gold protruding electrode 4a is formed on the metal electrode 1a of the first electronic component 1.

【００２２】この突起電極４ａの形成は、直径２５μｍ
の金ワイヤ３の先端を放電によって溶融・凝固させて７
５μｍの金ボール３ａを形成し、その後、表面に厚さ３
μｍの金が形成されている幅１００μｍの金属電極１ａ
を有したアルミナ配線基板１を２００℃に加熱した状態
で、金属ボール３ａを０．２ｗの超音波振動６を印加し
ながら３５ｇの荷重で２５ｍｓ間、金属電極１ａに押し
付けて接合し、金ワイヤを切断することで、最大部の径
が８０μｍの金の突起電極４ａを形成すようにすればよ
い。なお、ここでは突起電極を８個形成することにし
た。The projection electrode 4a is formed with a diameter of 25 μm.
The tip of the gold wire 3 is melted and solidified by electric discharge to obtain 7
A gold ball 3a having a thickness of 5 μm is formed.
100 μm wide metal electrode 1 a on which μm gold is formed
In a state where the alumina wiring substrate 1 having the above is heated to 200 ° C., the metal ball 3a is pressed against the metal electrode 1a with a load of 35 g for 25 ms while applying an ultrasonic vibration 6 of 0.2 w to bond the metal ball 3a to the gold wire. May be cut to form a gold protruding electrode 4a having a maximum diameter of 80 μm. Here, eight projecting electrodes are formed.

【００２３】一方、図１（ｃ）に示すように、金ワイヤ
３の先端に形成した金ボール３ａを超音波振動６を印加
しながら第２の電子部品２の金属電極２ａに熱圧着し、
金ワイヤを切断することで、図１（ｄ）に示すように第
２の電子部品２の金属電極２ａ上に金の突起電極４ｂを
形成する。On the other hand, as shown in FIG. 1C, a gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 2a of the second electronic component 2 while applying ultrasonic vibration 6.
By cutting the gold wire, a gold protruding electrode 4b is formed on the metal electrode 2a of the second electronic component 2 as shown in FIG.

【００２４】この突起電極４ｂの形成は、直径２５μｍ
の金ワイヤ３の先端を放電によって溶融・凝固させて７
５μｍの金ボール３ａを形成し、その後、表面に厚さ３
μｍの金が形成されている１００μｍ×１００μｍの金
属電極２ａを有したＧａＡｓ半導体素子２（２．０ｍｍ
×１．５ｍｍ×ｔ０．１ｍｍ）を２００℃に加熱した状
態で、金属ボール３ａを０．２ｗの超音波振動６を印加
しながら３５ｇの荷重で２５ｍｓ間、金属電極２ａに押
し付けて接合し、金ワイヤを切断することで、最大部の
径が８０μｍの金の突起電極４ｂを形成すようにすれば
よい。なお、ここでは突起電極を８個形成することにし
た。The projection electrode 4b is formed with a diameter of 25 μm.
The tip of the gold wire 3 is melted and solidified by electric discharge to obtain 7
A gold ball 3a having a thickness of 5 μm is formed.
A GaAs semiconductor device 2 having a metal electrode 2a of 100 μm × 100 μm on which a gold of
× 1.5 mm × t0.1 mm) at a temperature of 200 ° C., the metal ball 3 a was pressed against the metal electrode 2 a for 25 ms with a load of 35 g for 25 ms while applying an ultrasonic vibration 6 of 0.2 w, By cutting the gold wire, the gold protruding electrode 4b having a maximum diameter of 80 μm may be formed. Here, eight projecting electrodes are formed.

【００２５】このように超音波振動を印加しながら突起
電極４ａ、４ｂを形成しているので、金の表面の汚染状
態によらず安定して高い強度で接合できる。また、超音
波振動は突起電極毎に印加するため、小さな超音波振動
で接合でき、脆弱なＧａＡｓ半導体素子でも破損が生じ
ない。Since the protruding electrodes 4a and 4b are formed while applying ultrasonic vibration in this manner, bonding can be stably performed with high strength regardless of the state of contamination of the gold surface. Further, since ultrasonic vibration is applied to each protruding electrode, bonding can be performed with small ultrasonic vibration, and even a fragile GaAs semiconductor element is not damaged.

【００２６】この実施の形態ではワイヤとして金を用い
金の突起電極を形成するようにしているが、金の代わり
に金合金を用いて金合金の突起電極を形成してもよい。In this embodiment, gold is used as a wire to form a gold protruding electrode. However, a gold alloy protruding electrode may be formed using a gold alloy instead of gold.

【００２７】また、第１の電子部品としてアルミナ配線
基板を用いたが、ガラスセラミックスや窒化アルミ等の
セラミックス配線基板や樹脂配線基板、またはＳｉやＳ
ｉＧｅ、ＧａＡｓ、ＩｎＰ等の半導体素子、さらにはコ
ンデンサ素子、抵抗素子、インダクタ素子でもよい。な
お、金属電極の表面はアルミやアルミの合金、銀や銀の
合金、銅や銅の合金でもよい。Although an alumina wiring board is used as the first electronic component, a ceramic wiring board such as glass ceramics or aluminum nitride, a resin wiring board, or Si or S
It may be a semiconductor element such as iGe, GaAs, InP, etc., or a capacitor element, a resistance element, or an inductor element. The surface of the metal electrode may be aluminum or an aluminum alloy, silver or a silver alloy, copper or a copper alloy.

【００２８】また、第２の電子部品としてＧａＡｓの半
導体素子を用いたが、ＳｉやＳｉＧｅ、ＩｎＰ等の半導
体素子、またはコンデンサ素子、抵抗素子、インダクタ
素子、さらにはアルミナやガラスセラミックスや窒化ア
ルミ等のセラミックス配線基板や樹脂配線基板も使用で
きる。なお、金属電極の表面はアルミやアルミの合金、
銀や銀の合金、銅や銅の合金でもよい。Although a GaAs semiconductor element is used as the second electronic component, a semiconductor element such as Si, SiGe, or InP, or a capacitor element, a resistance element, an inductor element, or an alumina, glass ceramic, aluminum nitride, or the like is used. Ceramic wiring boards and resin wiring boards can also be used. The surface of the metal electrode is made of aluminum or aluminum alloy,
Silver or an alloy of silver, copper or an alloy of copper may be used.

【００２９】このように、第１の電子部品１の金属電極
１ａ上に突起電極４ａを、第２の電子部品２の金属電極
２ａ上に突起電極４ｂを形成した後、図２（ａ）に示す
ように、第１の電子部品１上の突起電極４ａと第２の電
子部品２上の突起電極４ｂとを位置合わせする。After the protruding electrode 4a is formed on the metal electrode 1a of the first electronic component 1 and the protruding electrode 4b is formed on the metal electrode 2a of the second electronic component 2 as shown in FIG. As shown, the bump electrode 4a on the first electronic component 1 and the bump electrode 4b on the second electronic component 2 are aligned.

【００３０】この位置合わせは、ＧａＡｓ半導体素子２
とアルミナ配線基板１のそれぞれに２カ所づつ設けた認
識用のパターンをカメラで認識して互いの中心位置と角
度を一致させることで行えばよい。詳細には、接合時に
ＧａＡｓ半導体素子の突起電極がアルミナ配線基板の突
起電極から滑り落ちないように、ＧａＡｓ半導体素子の
認識用パターンを１回認識した後、アルミナ配線基板の
認識用パターンは３回認識動作を行って３σで±５μｍ
以内の精度で位置を合わせすればよい。なお、このよう
にすると、１０．５秒で位置合わせすることができる。This alignment is performed by the GaAs semiconductor device 2
It is sufficient that the two recognition patterns provided on the substrate and the alumina wiring board 1 are recognized by the camera and the center position and the angle are matched with each other. In detail, after the recognition pattern of the GaAs semiconductor element is recognized once so that the projection electrode of the GaAs semiconductor element does not slip off the projection electrode of the alumina wiring board at the time of bonding, the recognition pattern of the alumina wiring board is three times. ± 5μm at 3σ by performing recognition operation
What is necessary is just to adjust a position with the accuracy within. In this case, the positioning can be performed in 10.5 seconds.

【００３１】位置合わせ後、図２（ｂ）に示すように、
第１の電子部品１と第２の電子部品２とを加熱した状態
で押し付け、第１の電子部品１の突起電極４ａと第２の
電子部品２の突起電極４ｂとを固相接合する。After the alignment, as shown in FIG.
The first electronic component 1 and the second electronic component 2 are pressed in a heated state, and the protruding electrode 4a of the first electronic component 1 and the protruding electrode 4b of the second electronic component 2 are solid-phase bonded.

【００３２】この電極の接合は、アルミナ配線基板１と
ＧａＡｓ半導体素子２を３００℃に加熱した状態で、Ｇ
ａＡｓ半導体素子２を８００ｇの荷重で１０秒間アルミ
ナ配線基板１に押し付けてアルミナ配線基板１上の金の
突起電極４ａとＧａＡｓ半導体素子２上の金の突起電極
４ｂとを接合するようにすればよい。金の突起電極は接
合の直前に形成するので、接合時の金表面の汚染状態は
一定であり、ばらつきのない安定した強度で接合でき
る。The bonding of the electrodes is performed by heating the alumina wiring substrate 1 and the GaAs semiconductor element 2 to 300 ° C.
The aAs semiconductor element 2 may be pressed against the alumina wiring substrate 1 with a load of 800 g for 10 seconds to join the gold projecting electrode 4a on the alumina wiring substrate 1 with the gold projecting electrode 4b on the GaAs semiconductor element 2. . Since the gold protruding electrode is formed immediately before bonding, the state of contamination of the gold surface during bonding is constant, and bonding can be performed with stable strength without variation.

【００３３】この実施の形態のフリップチップ方式で
は、電子部品の金属電極に超音波併用熱圧着で金の突起
電極を接合するようにしているので、超音波振動を印加
することで金以外の金属電極や金属の表面状態によらず
高い接合強度を得ることができる。In the flip chip method of this embodiment, the gold protruding electrode is bonded to the metal electrode of the electronic component by thermocompression combined with ultrasonic waves. High bonding strength can be obtained regardless of the surface condition of the electrode or metal.

【００３４】また、超音波振動は金の突起電極毎に個別
に印加するので大きな超音波振動は必要なく、脆弱な素
材の電子部品でも破損が生じない。さらに電極数が増し
ても安定した接合強度が得られる。Also, since ultrasonic vibration is applied individually to each of the gold protruding electrodes, large ultrasonic vibration is not required, and electronic components made of fragile materials do not break. Even if the number of electrodes further increases, stable bonding strength can be obtained.

【００３５】また、本方式では金の突起電極は接合の直
前に形成するため、接合時の金表面の汚染状態は一定で
あり、ばらつきのない安定した接合部が得られる利点が
ある。Further, in this method, since the gold protruding electrode is formed immediately before bonding, the state of contamination of the gold surface at the time of bonding is constant, and there is an advantage that a stable bonded portion without variation can be obtained.

【００３６】実施の形態２．図３、図４はこの実施の形
態２による電子装置の製造方法を示す図である。図にお
いて、７は突起電極４ａの先端に形成した平坦部、８は
平板である。なお、他の符号は図１と同じであるので説
明は省略する。Embodiment 2 3 and 4 are views showing a method for manufacturing an electronic device according to the second embodiment. In the figure, 7 is a flat portion formed at the tip of the protruding electrode 4a, and 8 is a flat plate. The other reference numerals are the same as those in FIG.

【００３７】電子装置を製造するには、まず、図３
（ａ）に示すように、金ワイヤ３の先端に形成した金ボ
ール３ａを超音波振動６を印加しながら第１の電子部品
１の金属電極１ａに熱圧着し、金ワイヤを切断すること
で、図３（ｂ）に示すように第１の電子部品１の金属電
極１ａ上に金の突起電極４ａを形成する。To manufacture an electronic device, first, FIG.
As shown in (a), the gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 1a of the first electronic component 1 while applying the ultrasonic vibration 6, and the gold wire is cut. Then, as shown in FIG. 3B, a gold protruding electrode 4a is formed on the metal electrode 1a of the first electronic component 1.

【００３８】この突起電極４ａの形成は、実施の形態１
と同様にして、実施の形態１と同様のアルミナ配線基板
１の金属電極１ａ上に最大部の径が８０μｍの金の突起
電極４ａを形成すようにすればよい。なお、ここでも突
起電極を８個形成することにした。The formation of the projecting electrode 4a is performed in the first embodiment.
In the same manner as in the first embodiment, a gold projecting electrode 4a having a maximum diameter of 80 μm may be formed on the metal electrode 1a of the same alumina wiring board 1 as in the first embodiment. Here, eight projecting electrodes were also formed.

【００３９】一方、図３（ｃ）に示すように、金ワイヤ
３の先端に形成した金ボール３ａを超音波振動６を印加
しながら第２の電子部品２の金属電極２ａに熱圧着し、
金ワイヤを切断することで、図３（ｄ）に示すように第
２の電子部品２の金属電極２ａ上に金の突起電極４ｂを
形成する。On the other hand, as shown in FIG. 3C, a gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 2a of the second electronic component 2 while applying ultrasonic vibration 6.
By cutting the gold wire, a gold protruding electrode 4b is formed on the metal electrode 2a of the second electronic component 2 as shown in FIG.

【００４０】この突起電極４ｂの形成は、実施の形態１
と同様にして、実施の形態１と同様のＧａＡｓ半導体素
子２の金属電極２ａ上に最大部の径が８０μｍの金の突
起電極４ｂを形成すようにすればよい。なお、ここでも
突起電極を８個形成することにした。The formation of the projecting electrode 4b is performed in the first embodiment.
In the same manner as in the first embodiment, a gold projection electrode 4b having a maximum diameter of 80 μm may be formed on the metal electrode 2a of the GaAs semiconductor element 2 similar to the first embodiment. Here, eight projecting electrodes were also formed.

【００４１】ワイヤ、第１の電子部品、第２の電子部品
は、実施の形態１で説明したものを用いてもよく、金属
電極の表面はアルミやアルミの合金、銀や銀の合金、銅
や銅の合金でもよい。As the wire, the first electronic component, and the second electronic component, those described in the first embodiment may be used. The surface of the metal electrode is formed of aluminum or an aluminum alloy, silver or a silver alloy, or copper. Or an alloy of copper.

【００４２】また、第１の電子部品１に突起電極４ａを
形成した後、図４（ａ）に示すように、第１の電子部品
１に形成した突起電極４ａの先端に平板８を押しつけ、
突起電極４ａの先端に平坦部７を形成する。平坦部７の
形成は、例えば平板８を９６０ｇの荷重で５秒間押し付
けて突起電極４ａの先端に径６３μｍの平坦部７を形成
すればよい。After the protruding electrode 4a is formed on the first electronic component 1, the flat plate 8 is pressed against the tip of the protruding electrode 4a formed on the first electronic component 1, as shown in FIG.
A flat part 7 is formed at the tip of the protruding electrode 4a. The flat portion 7 may be formed, for example, by pressing the flat plate 8 with a load of 960 g for 5 seconds to form the flat portion 7 having a diameter of 63 μm at the tip of the protruding electrode 4a.

【００４３】このように、第１の電子部品１の突起電極
４ａの先端に平坦部７を、第２の電子部品２上に突起電
極４ｂを形成した後、図４（ｂ）に示すように、第１の
電子部品１の突起電極４ａと第２の電子部品２の突起電
極４ｂとを位置合わせする。この位置合わせは実施の形
態１と同様にすればよい。As described above, after the flat portion 7 is formed on the tip of the protruding electrode 4a of the first electronic component 1 and the protruding electrode 4b is formed on the second electronic component 2, as shown in FIG. Then, the projection electrode 4a of the first electronic component 1 and the projection electrode 4b of the second electronic component 2 are aligned. This alignment may be performed in the same manner as in the first embodiment.

【００４４】そして、図４（ｃ）に示すように、第１の
電子部品１と第２の電子部品２とを加熱した状態で押し
付け、先端に平坦部７を形成した金の突起電極４ａと第
２の電子部品２の金の突起電極４ｂとを固相接合する。
電極の接合は実施の形態１と同様にすればよい。Then, as shown in FIG. 4 (c), the first electronic component 1 and the second electronic component 2 are pressed in a heated state, and the gold protruding electrode 4a having the flat portion 7 formed at the tip is formed. The gold projection electrode 4b of the second electronic component 2 is solid-phase bonded.
The electrodes may be joined in the same manner as in Embodiment 1.

【００４５】この実施の形態では、アルミナ配線基板上
の突起電極の先端をあらかじめ平坦にしているので、ア
ルミナ配線基板にＧａＡｓ半導体素子を押し付ける際
に、アルミナ配線基板上の突起電極とＧａＡｓ半導体素
子上の突起電極の位置がずれても、アルミナ配線基板上
の突起電極からＧａＡｓ半導体素子上の突起電極がすべ
り落ちにくくなる。その結果、高精度な位置合わせが不
要となる。In this embodiment, since the tips of the protruding electrodes on the alumina wiring board are flattened in advance, when the GaAs semiconductor element is pressed on the alumina wiring board, the protruding electrodes on the alumina wiring board and the GaAs semiconductor element are not pressed. Even if the position of the projecting electrode is shifted, the projecting electrode on the GaAs semiconductor element hardly slips from the projecting electrode on the alumina wiring substrate. As a result, high-precision alignment is not required.

【００４６】この実施の形態では、３σで±１５μｍ以
内の位置合わせ精度で十分であり、ＧａＡｓ半導体素
子、アルミナ配線基板ともに、それぞれ２箇所づつ設置
した認識用のパターンを各１回づつ認識するだけで達成
できた。この位置合わせに要した時間は４．５秒であ
り、実施の形態１に比べて生産タクトが６秒短縮でき
た。In this embodiment, a positioning accuracy within ± 15 μm at 3σ is sufficient, and both the GaAs semiconductor element and the alumina wiring substrate need only recognize the recognition patterns set at two locations each one time. Was achieved. The time required for this alignment was 4.5 seconds, and the production tact was reduced by 6 seconds compared to the first embodiment.

【００４７】さらに、アルミナ配線基板上の金の突起電
極の先端をあらかじめ平坦にしておくとＧａＡｓ半導体
素子上の金の突起電極がくさびのようにアルミナ配線基
板上の金の突起電極に食込んで接合強度が向上する効果
も生じる。Furthermore, if the tips of the gold protruding electrodes on the alumina wiring substrate are flattened in advance, the gold protruding electrodes on the GaAs semiconductor element will bite into the gold protruding electrodes on the alumina wiring substrate like wedges. There is also an effect of improving the bonding strength.

【００４８】先端を平坦にしない場合、突起電極あたり
のシア破断強度は平均で約７５ｇであったが、先端を平
坦にした場合は突起電極あたりのシア破断強度は平均で
約９２ｇに向上した。もちろん、アルミナ配線基板の突
起電極ではなくＧａＡｓ半導体素子の突起電極の先端部
を平坦にしておいても同様の効果が得られる。When the tip was not flat, the shear breaking strength per projection electrode was about 75 g on average, but when the tip was flat, the shear breaking strength per projection electrode was improved to about 92 g on average. Of course, the same effect can be obtained by flattening the tip of the protruding electrode of the GaAs semiconductor element instead of the protruding electrode of the alumina wiring substrate.

【００４９】また、この実施の形態では、第１の電子部
品（アルミナ配線基板）に形成された突起電極の先端に
平坦部を形成するようにしているが、逆に、第２の電子
部品（ＧａＡｓ半導体素子）に形成された突起電極の先
端に平坦部を形成してもよい。Further, in this embodiment, a flat portion is formed at the tip of the protruding electrode formed on the first electronic component (alumina wiring board). Conversely, the second electronic component ( A flat portion may be formed at the tip of the protruding electrode formed on the GaAs semiconductor device).

【００５０】また、第１の電子部品と第２の電子部品の
両方の突起電極の先端部を平坦にしておいてもよい。こ
の場合、突起電極はさらにすべり落ちにくくなり、その
時、第１の電子部品または第２の電子部品の突起電極の
どちらか一方の平坦部の径が他方より大きくなるように
変形させておくと、平坦部径の小さい金の突起電極がく
さびのように食込んで接合強度が向上する効果が生じ
る。Further, the tips of the projecting electrodes of both the first electronic component and the second electronic component may be flattened. In this case, the protruding electrode becomes more difficult to slide down. At this time, if the flat portion of one of the protruding electrodes of the first electronic component or the second electronic component is deformed so as to have a larger diameter than the other, The effect that the gold protruding electrode having a small flat portion bites in like a wedge to improve the bonding strength is produced.

【００５１】実施の形態３．図５、図６はこの実施の形
態３による電子装置およびその製造方法を示す図であ
る。図において１ｂは第１の電子部品１の金属電極、４
ｃは電極２上に形成され突起電極４ａよりも径の小さい
金の突起電極、９はスルーホール、９ａは金属層、１０
ははんだ電極である。なお、他の符号は図１と同じであ
るので説明は省略する。Embodiment 3 FIG. 5 and 6 are views showing an electronic device and a method of manufacturing the same according to the third embodiment. In the figure, 1b is a metal electrode of the first electronic component 1, 4
c is a gold protruding electrode formed on the electrode 2 and having a smaller diameter than the protruding electrode 4a; 9 is a through hole; 9a is a metal layer;
Is a solder electrode. The other reference numerals are the same as those in FIG.

【００５２】電子装置を製造するには、まず、図５
（ａ）に示すように、金ワイヤ３の先端に形成した金ボ
ール３ａを超音波振動６を印加しながら第１の電子部品
１の金属電極１ｂに熱圧着し、金ワイヤを切断すること
で、図５（ｂ）に示すように第１の電子部品１の金属電
極１ｂ上に金の突起電極４ａを形成する。To manufacture an electronic device, first, FIG.
As shown in (a), a gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 1b of the first electronic component 1 while applying ultrasonic vibration 6, and the gold wire is cut. Then, as shown in FIG. 5B, a gold projecting electrode 4a is formed on the metal electrode 1b of the first electronic component 1.

【００５３】この突起電極４ａの形成は、直径２５μｍ
の金ワイヤ３の先端を放電によって溶融・凝固させて７
５μｍの金ボール３ａを形成し、その後、表面に厚さ
０．３μｍの金が形成されている幅１００μｍの金属電
極１ｂを有したアルミナ配線基板１を２００℃に加熱し
た状態で、金属ボール３ａを０．２ｗの超音波振動６を
印加しながら３５ｇの荷重で２５ｍｓ間、金属電極１ｂ
に押し付けて接合し、金ワイヤを切断することで、最大
部の径が８０μｍの金の突起電極４ａを形成すようにす
ればよい。なお、ここでは突起電極を５個形成すること
にした。The projection electrode 4a is formed with a diameter of 25 μm.
The tip of the gold wire 3 is melted and solidified by electric discharge to obtain 7
A 5 μm gold ball 3 a is formed, and then the metal ball 3 a is heated to 200 ° C. on an alumina wiring substrate 1 having a metal electrode 1 b having a width of 100 μm and having a thickness of 0.3 μm on the surface. Is applied to the metal electrode 1b with a load of 35 g for 25 ms while applying an ultrasonic vibration 6 of 0.2 w.
, And the gold wire is cut to form the gold protruding electrode 4a having a maximum diameter of 80 μm. Here, five projecting electrodes are formed.

【００５４】一方、図５（ｃ）に示すように、金ワイヤ
３の先端に形成した金ボール３ａを超音波振動６を印加
しながら第２の電子部品２の金属電極２ａに熱圧着し、
金ワイヤを切断することで、図５（ｄ）に示すように、
第２の電子部品２の金属電極２ａ上に金の突起電極４ｃ
を形成する。この突起電極４ｃの径の大きさは、突起電
極４ａの径よりも小さくなるように形成する。On the other hand, as shown in FIG. 5C, a gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 2a of the second electronic component 2 while applying ultrasonic vibration 6.
By cutting the gold wire, as shown in FIG.
A gold projection electrode 4c is formed on the metal electrode 2a of the second electronic component 2.
To form The diameter of the projection electrode 4c is formed to be smaller than the diameter of the projection electrode 4a.

【００５５】この突起電極４ｃの形成は、直径２０μｍ
の金ワイヤ３の先端を放電によって溶融・凝固させて５
５μｍの金ボール３ａを形成し、その後、表面に厚さ３
μｍの金が形成されている６７μｍ×６７μｍの金属電
極２ａを有したＩｎＰｎ半導体素子（０．４５ｍｍ×
０．３ｍｍ×ｔ０．１５ｍｍ）２を２００℃に加熱した
状態で、金属ボール３ａを０．１８ｗの超音波振動６を
印加しながら３０ｇの荷重で２０ｍｓ間、金属電極２ａ
に押し付けて接合し、金ワイヤを切断することで、最大
部の径が６２μｍの金の突起電極を形成すようにすれば
よい。なお、ここでは突起電極を５個形成することにし
た。The projection electrode 4c is formed with a diameter of 20 μm.
The tip of the gold wire 3 is melted and solidified by electric discharge to obtain 5
A gold ball 3a having a thickness of 5 μm is formed.
InPn semiconductor device having a 67 μm × 67 μm metal electrode 2 a on which a μm gold is formed (0.45 mm ×
(0.3 mm × t 0.15 mm) 2 is heated to 200 ° C., and the metal ball 3 a is applied to the metal electrode 2 a for 20 ms with a load of 30 g while applying an ultrasonic vibration 6 of 0.18 w.
Then, the gold protruding electrode having the maximum diameter of 62 μm may be formed by pressing and bonding the wire and cutting the gold wire. Here, five projecting electrodes are formed.

【００５６】このように超音波振動６を印加することに
よって金の表面の汚染状態によらず安定して高い強度で
接合できる。また、超音波振動は突起電極毎に印加する
ため、小さな超音波振動で接合でき、脆弱なＩｎＰｎ半
導体素子でも破損が生じない。By applying the ultrasonic vibration 6 in this manner, bonding can be stably performed with high strength regardless of the contamination state of the gold surface. In addition, since ultrasonic vibration is applied to each protruding electrode, bonding can be performed with small ultrasonic vibration, and breakage does not occur even in a fragile InPn semiconductor element.

【００５７】ワイヤ、第１の電子部品、第２の電子部品
は、実施の形態１で説明したものを用いてもよく、金属
電極の表面はアルミやアルミの合金、銀や銀の合金、銅
や銅の合金でもよい。As the wire, the first electronic component, and the second electronic component, those described in Embodiment 1 may be used. The surface of the metal electrode may be made of aluminum or an aluminum alloy, silver or a silver alloy, copper Or an alloy of copper.

【００５８】このように、第１の電子部品１の金属電極
１ｂ上に突起電極４ａを、第２の電子部品２の電極２ａ
上に突起電極４ｃを形成した後、図６（ａ）に示すよう
に、第１の電子部品１の突起電極４ａと第２の電子部品
２の突起電極４ｃとを位置合わせする。As described above, the protruding electrode 4a is formed on the metal electrode 1b of the first electronic component 1 and the electrode 2a of the second electronic component 2 is formed.
After the protruding electrode 4c is formed thereon, as shown in FIG. 6A, the protruding electrode 4a of the first electronic component 1 and the protruding electrode 4c of the second electronic component 2 are aligned.

【００５９】この位置合わせは、ＩｎＰｎ半導体素子
２、アルミナ配線基板１ともに、それぞれ２カ所づつ設
置した認識用のパターンを各１回づつ認識して３σで±
１５μｍ以内の精度で位置を合わせすればよい。なお、
このようにすると、４．５秒で位置合せわせすることが
できる。This alignment is performed by recognizing the recognition patterns, which are provided at two places, respectively, once for each of the InPn semiconductor element 2 and the alumina wiring board 1 once each, and ± 3σ.
The position may be adjusted with an accuracy within 15 μm. In addition,
In this way, the alignment can be performed in 4.5 seconds.

【００６０】位置合わせ後、図６（ｂ）に示すように、
第１の電子部品１と第２の電子部品２とを加熱した状態
で押し付け、第１の電子部品１の金の突起電極４ａと第
２の電子部品２の径の小さい金の突起電極４ｃとを固相
接合する。After the alignment, as shown in FIG.
The first electronic component 1 and the second electronic component 2 are pressed in a heated state, and the gold protruding electrode 4a of the first electronic component 1 and the gold protruding electrode 4c of the second electronic component 2 having a small diameter are pressed. For solid phase bonding.

【００６１】この電極間の接合は、アルミナ配線基板１
とＩｎＰｎ半導体素子２を３００℃に加熱した状態で、
ＩｎＰｎ半導体素子２を４５０ｇの荷重で１０秒間アル
ミナ配線基板１に押しつけてアルミナ配線基板１上の金
の突起電極４ａとＩｎＰｎ半導体素子２上の金の突起電
極４ｃとを接合するようにすればよい。金の突起電極は
接合の直前に形成するので、接合時の金表面の汚染状態
は一定であり、ばらつきのない安定した強度で接合でき
る。The bonding between the electrodes is performed by the alumina wiring board 1
And InPn semiconductor element 2 heated to 300 ° C.
The InPn semiconductor element 2 may be pressed against the alumina wiring substrate 1 with a load of 450 g for 10 seconds to join the gold projecting electrode 4a on the alumina wiring substrate 1 with the gold projecting electrode 4c on the InPn semiconductor element 2. . Since the gold protruding electrode is formed immediately before bonding, the state of contamination of the gold surface during bonding is constant, and bonding can be performed with stable strength without variation.

【００６２】その後、図６（ｃ）に示すように、第１の
電子部品１の電極１ｂにはんだ電極１０を形成し、はん
だ電極１０を介して配線基板等、他の電子部品に実装す
る。Thereafter, as shown in FIG. 6C, a solder electrode 10 is formed on the electrode 1b of the first electronic component 1, and mounted on another electronic component such as a wiring board via the solder electrode 10.

【００６３】はんだ電極１０は、表面に０．３μｍの金
を形成した金属電極１ｂに直径０．５ｍｍの錫と鉛の合
金からなるはんだボールを設置した後、はんだボールを
溶融・凝固させて形成すればよい。The solder electrode 10 is formed by disposing a solder ball made of an alloy of tin and lead having a diameter of 0.5 mm on a metal electrode 1b having a surface of 0.3 μm gold and then melting and solidifying the solder ball. do it.

【００６４】なお、はんだ電極としては錫、インジウ
ム、錫と銀の合金、錫と金の合金、インジウムと鉛の合
金、錫と鉛と銀の合金、錫と鉛とインジウムの合金、錫
と銀と銅の合金、錫と銀と銅とビスマスの合金でもよ
い。また、はんだ電極を形成する金属電極の表面は銀ま
たは銀の合金、銅または銅の合金、ニッケルでもよい。The solder electrodes include tin, indium, tin-silver alloy, tin-gold alloy, indium-lead alloy, tin-lead-silver alloy, tin-lead-indium alloy, tin-silver Alloy of tin and silver, or an alloy of tin, silver, copper and bismuth. The surface of the metal electrode forming the solder electrode may be silver or a silver alloy, copper or a copper alloy, or nickel.

【００６５】以上のようにして、第１の電子部品１の電
極１ｂ上に形成されその形状が球を押しつぶしたような
形状をしている第１の導電体（突起電極４ａが押しつぶ
されたもの）と、第１の導電体と電気的に接続されるよ
うに第２の電子部品２の電極２ａ上に形成されその形状
が球を押しつぶしたような形状をしておりその径が第１
の導電体の径と異なる第２の導電体（突起電極４ｃが押
しつぶされたもの）とを備えた電子装置が製造される。As described above, the first conductor formed on the electrode 1b of the first electronic component 1 and having a shape like a crushed sphere (the first conductor having the crushed protruding electrode 4a) ), And formed on the electrode 2a of the second electronic component 2 so as to be electrically connected to the first conductor, the shape of which is like a crushed sphere and whose diameter is the first.
An electronic device including a second conductor (having the protruding electrode 4c crushed) having a diameter different from that of the conductor is manufactured.

【００６６】ＩｎＰｎ半導体素子等の極めて高価な素子
では、しばしば金属電極の寸法を小さくして素子面積を
縮小することでコストの低減が図られる。そのため、Ｉ
ｎＰｎ半導体素子では例えば採寸が６７μｍ×６７μｍ
と極めて小さな電極が形成されることになる。In the case of extremely expensive devices such as InPn semiconductor devices, the cost can be reduced by reducing the size of the metal electrode and the device area. Therefore, I
For an nPn semiconductor device, for example, the measurement is 67 μm × 67 μm.
And an extremely small electrode is formed.

【００６７】ここで、電極上に形成される突起電極は、
ワイヤ先端の金属ボールを電子部品の金属電極に超音波
熱圧着する際に金属ボールが金属電極からはみ出すと電
子部品が破損する危険が生じるため、金属ボール径すな
わち突起電極径は電子部品の電極寸法で制限されること
になる。Here, the projecting electrodes formed on the electrodes are:
When the metal ball at the tip of the wire is subjected to ultrasonic thermocompression bonding to the metal electrode of the electronic component, if the metal ball protrudes from the metal electrode, there is a risk of damaging the electronic component. Will be limited.

【００６８】そのため、例えば採寸が６７μｍ×６７μ
ｍと極めて小さな電極では、突起電極の形成位置精度も
考慮すると、金の突起電極径を６２μｍと小径にしなけ
ればならず、このような小径の突起電極では、２段以上
に高く積み重ねた接続構造は強度が低く、外部からの衝
撃等で破断する危険が増すことになる。Therefore, for example, the measurement is 67 μm × 67 μm.
In the case of an electrode having an extremely small diameter of m, the diameter of the gold projection electrode must be reduced to 62 μm in consideration of the accuracy of the formation position of the projection electrode. Has low strength, and the danger of breaking due to an external impact or the like increases.

【００６９】それに対して、この実施の形態で示した電
子装置のように、アルミナ配線基板の電極径をＩｎＰｎ
半導体素子の突起電極径より大きくしておけば、ＩｎＰ
ｎ半導体素子の突起電極径がちいさくとも、その接合部
の強度は増し、破断の恐れがなくなる。On the other hand, as in the electronic device shown in this embodiment, the electrode diameter of the alumina wiring substrate is changed to InPn.
If the diameter is larger than the diameter of the bump electrode of the semiconductor element, InP
Even if the diameter of the protruding electrode of the n-semiconductor element is small, the strength of the joint increases and the possibility of breakage is eliminated.

【００７０】また、アルミナ配線基板上の金の突起電極
の径をＩｎＰｎ半導体素子上の金の突起電極径より大き
くしておくと、アルミナ配線基板にＩｎＰｎ半導体素子
を押し付ける際に、アルミナ配線基板上の金の突起電極
とＩｎＰｎ半導体素子上の金の突起電極の位置がずれて
いても、アルミナ配線基板上の金の突起電極からＩｎＰ
ｎ半導体素子上の金の突起電極がすべり落ちにくくなる
ため、高い搭載精度が不要となって位置合わせ時の認識
回数が低減でき、実施の形態１に比べて生産タクトが短
縮できる。If the diameter of the gold projection electrode on the alumina wiring substrate is made larger than the diameter of the gold projection electrode on the InPn semiconductor element, when the InPn semiconductor element is pressed against the alumina wiring substrate, Even if the position of the gold protrusion electrode on the alumina wiring substrate is shifted from the position of the gold protrusion electrode on the InPn semiconductor element, the InP
Since the gold protruding electrode on the n-semiconductor element is unlikely to slide down, high mounting accuracy is not required, the number of times of recognition at the time of alignment can be reduced, and the production tact can be reduced as compared with the first embodiment.

【００７１】また、一方の金の突起電極の先端に平坦部
を形成する工程も省けるため、実施の形態２に比べても
生産性がよい。さらに、アルミナ配線基板の金の突起電
極にＩｎＰｎ半導体素子の金の突起電極がくさびのよう
に食込んで接合強度が向上する利点もある。Further, since the step of forming a flat portion at the tip of one gold protruding electrode can be omitted, the productivity is higher than that of the second embodiment. Further, there is also an advantage that the gold protruding electrode of the InPn semiconductor element cuts into the gold protruding electrode of the alumina wiring substrate like a wedge to improve the bonding strength.

【００７２】なお、金属電極の寸法が十分大きい電子部
品同士を接続する場合でも、前述した生産タクト短縮と
接合強度向上の効果を得るため、一方の金の突起電極径
を小さくしてもよいことは言うまでもない。Even when electronic components having sufficiently large metal electrodes are connected to each other, the diameter of one gold protruding electrode may be reduced in order to obtain the effects of shortening the production cycle and improving the bonding strength. Needless to say.

【００７３】また、第１の電子部品と第２の電子部品の
金の突起電極径が異なる場合でも、接合を行う前にどち
らか一方、あるいは両方の金の突起電極の先端に平板を
押し付けて平坦部を形成しておくと、接合時の金の突起
電極のすべり落ちはさらに生じにくくなる。Even when the diameter of the gold projection electrode of the first electronic component is different from that of the second electronic component, a flat plate is pressed against the tip of one or both of the gold projection electrodes before joining. If a flat portion is formed, sliding of the gold protruding electrode at the time of bonding is further less likely to occur.

【００７４】実施の形態４．図７、図８はこの実施の形
態４による電子装置の製造方法を示す図である。図にお
いて、４ｄは第２の電子部品２の電極２ａ上に形成され
た第１の突起電極４ｂ上にさらに形成された金で構成さ
れる第２の突起電極、１１は熱硬化型の樹脂である。な
お、他の符号は図４〜図６と同じであるので説明は省略
する。Embodiment 4 7 and 8 are views showing a method for manufacturing an electronic device according to the fourth embodiment. In the figure, 4d is a second protruding electrode made of gold further formed on the first protruding electrode 4b formed on the electrode 2a of the second electronic component 2, and 11 is a thermosetting resin. is there. The other reference numerals are the same as those in FIGS.

【００７５】電子装置を製造するには、まず、図７
（ａ）に示すように、金ワイヤ３の先端に形成した金ボ
ール３ａを超音波振動６を印加しながら第１の電子部品
１の金属電極１ｂに熱圧着し、金ワイヤを切断すること
で、図７（ｂ）に示すように第１の電子部品１の金属電
極１ｂ上に金の突起電極４ａを形成する。To manufacture an electronic device, first, FIG.
As shown in (a), a gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 1b of the first electronic component 1 while applying ultrasonic vibration 6, and the gold wire is cut. Then, as shown in FIG. 7B, a gold projecting electrode 4a is formed on the metal electrode 1b of the first electronic component 1.

【００７６】この突起電極４ａの形成は、直径２５μｍ
の金ワイヤ３の先端を放電によって溶融・凝固させて７
５μｍの金ボール３ａを形成し、その後、表面に厚さ
０．３μｍの金が形成されている幅１００μｍの金属電
極１ｂを有したアルミナ配線基板１を２００℃に加熱し
た状態で、金属ボール３ａを０．２ｗの超音波振動６を
印加しながら３５ｇの荷重で２５ｍｓ間、金属電極１ａ
に押し付けて接合し、金ワイヤを切断することで、最大
部の径が８０μｍの金の突起電極４ａを形成すようにす
ればよい。なお、ここでは突起電極を１５０個形成する
ことにした。The projection electrode 4a is formed with a diameter of 25 μm.
The tip of the gold wire 3 is melted and solidified by electric discharge to obtain 7
A 5 μm gold ball 3 a is formed, and then the metal ball 3 a is heated to 200 ° C. on an alumina wiring substrate 1 having a metal electrode 1 b having a width of 100 μm and having a thickness of 0.3 μm on the surface. Is applied to the metal electrode 1a for 25 ms with a load of 35 g while applying an ultrasonic vibration 6 of 0.2 w.
, And the gold wire is cut to form the gold protruding electrode 4a having a maximum diameter of 80 μm. Here, 150 projecting electrodes were formed.

【００７７】一方、図７（ｃ）に示すように、金ワイヤ
３の先端に形成した金ボール３ａを超音波振動６を印加
しながら第２の電子部品２の金属電極２ａに熱圧着して
金の突起電極４ｂを形成した後、さらに金ワイヤ３の先
端に形成した金ボール３ａを超音波振動６を印加しなが
らこの突起電極４ｂ上に熱圧着し、図７（ｄ）に示すよ
うに、突起電極４ｂ上に突起電極４ｄを形成する。すな
わち、第２の電子部品２の金属電極２ａ上に２段の金の
突起電極４ｂ、４ｄを形成する。On the other hand, as shown in FIG. 7C, a gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded to the metal electrode 2a of the second electronic component 2 while applying ultrasonic vibration 6. After the gold protruding electrode 4b is formed, the gold ball 3a formed at the tip of the gold wire 3 is thermocompression-bonded onto the protruding electrode 4b while applying the ultrasonic vibration 6, as shown in FIG. The projection electrode 4d is formed on the projection electrode 4b. That is, two-stage gold protruding electrodes 4b and 4d are formed on the metal electrode 2a of the second electronic component 2.

【００７８】この２段の突起電極４ａ、４ｄの形成は、
直径２５μｍの金ワイヤ３の先端を放電によって溶融・
凝固させて７５μｍの金ボール３ａを形成した後、表面
に厚さ１μｍのアルミが形成されている１００μｍ×１
００μｍの金属電極２ａを有したＳｉＧｅ半導体素子２
（１１ｍｍ×１１ｍｍ×ｔ０．４ｍｍ）を１５０℃に加
熱した状態で、金ボール３ａを０．２ｗの超音波振動６
を印加しながら３５ｇの荷重で２５ｍｓ間、金属電極２
ａに押し付けて接合し、金ワイヤを切断して金の突起電
極を形成し、さらに、直径２５μｍの金ワイヤ３の先端
を放電によって溶融・凝固させて７５μｍの金ボール３
ａを形成して０．２ｗの超音波振動６を印加しながら３
５ｇの荷重で２５ｍｓ間、金の突起電極４ｂに押し付け
て接合し、金ワイヤを切断することで、最大部の径が８
０μｍの金の突起電極４ｂ、４ｄを２段に形成すればよ
い。なお、ここでは突起電極を１５０個形成することに
した。The formation of the two-stage projecting electrodes 4a and 4d is as follows.
The tip of the gold wire 3 having a diameter of 25 μm is melted by electric discharge.
After solidification to form a 75 μm gold ball 3a, 100 μm × 1 having a 1 μm thick aluminum formed on the surface
SiGe semiconductor device 2 having 00 μm metal electrode 2a
(11 mm × 11 mm × t 0.4 mm) was heated to 150 ° C., and the gold ball 3 a was subjected to ultrasonic vibration 6
While applying a 35 g load to the metal electrode 2 for 25 ms.
a, the gold wire is cut to form a gold protruding electrode, and the tip of the gold wire 3 having a diameter of 25 μm is melted and solidified by electric discharge to form a gold ball 3 having a diameter of 75 μm.
a while forming and applying a 0.2 w ultrasonic vibration 6
By pressing against the gold protruding electrode 4b for 25 ms with a load of 5 g and cutting the gold wire, the diameter of the largest portion is 8 mm.
The 0 μm gold projecting electrodes 4b and 4d may be formed in two steps. Here, 150 projecting electrodes were formed.

【００７９】このように超音波振動を印加しながら突起
電極４ａ、４ｂ、４ｄを形成しているので、金以外の金
属電極や表面が汚染された金の電極でも安定して高い強
度で接合できる。また、超音波振動は突起電極毎に印加
するため、小さな超音波振動で接合できるとともに、電
極数が例えば１５０と多ピンであっても突起電極の接合
強度がばらつくことがない。Since the protruding electrodes 4a, 4b, 4d are formed while applying ultrasonic vibrations in this manner, metal electrodes other than gold and gold electrodes whose surface is contaminated can be stably bonded with high strength. . Also, since ultrasonic vibration is applied to each protruding electrode, bonding can be performed with small ultrasonic vibration, and the bonding strength of the protruding electrode does not vary even if the number of electrodes is as large as 150, for example.

【００８０】ワイヤ、第１の電子部品、第２の電子部品
は、実施の形態１で説明したものを用いてもよく、金属
電極の表面はアルミやアルミの合金、銀や銀の合金、銅
や銅の合金でもよい。As the wire, the first electronic component, and the second electronic component, those described in the first embodiment may be used. The surface of the metal electrode may be aluminum or an aluminum alloy, silver or a silver alloy, copper Or an alloy of copper.

【００８１】また、第１の電子部品１に突起電極４ａを
形成した後、図８（ａ）に示すように、加熱した状態で
第１の電子部品１に形成した突起電極４ａの先端に平板
８を押しつけ、突起電極４ａの先端部に平坦部７を形成
する。After forming the protruding electrode 4a on the first electronic component 1, as shown in FIG. 8A, a flat plate is formed on the tip of the protruding electrode 4a formed on the first electronic component 1 in a heated state. 8 is pressed to form a flat portion 7 at the tip of the protruding electrode 4a.

【００８２】平坦部７の形成は、例えば、３００℃に加
熱した状態で平板を１８ｋｇの荷重で５秒間押し付けて
金の突起電極の先端に径７４μｍの平坦部を形成すれば
よい。The flat portion 7 may be formed, for example, by pressing a flat plate with a load of 18 kg for 5 seconds while heating at 300 ° C. to form a flat portion having a diameter of 74 μm at the tip of the gold protruding electrode.

【００８３】加熱した状態で平板を押し付けることで、
金の突起電極とアルミナ配線基板の金属電極表面の金と
の接合界面で固相接合を進展させて接合強度をより高め
ることが可能となる。加熱せずに平板を押し付けた場
合、金の突起電極あたりのシア破断強度は平均で約４２
ｇであったが、３００に加熱した状態で平板を押し付け
ると、金の突起電極あたりのシア破断強度は平均で約６
０ｇに向上した。なお、平板を押し付ける時の加熱温度
が１５０℃以上であれば、金の突起電極の接合強度の向
上効果が得られる。By pressing a flat plate in a heated state,
It is possible to further increase the bonding strength by developing solid-state bonding at the bonding interface between the gold projection electrode and the gold on the metal electrode surface of the alumina wiring substrate. When a flat plate is pressed without heating, the shear breaking strength per gold protruding electrode is about 42 on average.
g, but when the flat plate was pressed while being heated to 300, the shear breaking strength per gold protruding electrode was about 6 on average.
It improved to 0 g. If the heating temperature when pressing the flat plate is 150 ° C. or higher, the effect of improving the bonding strength of the gold protruding electrode can be obtained.

【００８４】このように、第１の電子部品１の金属電極
１ｂ上の突起電極４ａの先端に平坦部７を、第２の電子
部品２上に２段の突起電極４ｂ、４ｄを形成した後、図
８（ｂ）に示すように、第１の電子部品１の突起電極４
ａと第２の電子部品２の２段の突起電極４ｂ、４ｄとを
位置合わせする。この位置合わせは実施の形態３と同様
にすればよい。As described above, after the flat portion 7 is formed at the tip of the protruding electrode 4a on the metal electrode 1b of the first electronic component 1, and after the two-stage protruding electrodes 4b and 4d are formed on the second electronic component 2, As shown in FIG. 8B, the bump electrodes 4 of the first electronic component 1
a and the two-stage protruding electrodes 4b and 4d of the second electronic component 2 are aligned. This alignment may be performed in the same manner as in the third embodiment.

【００８５】その後、図８（ｃ）に示すように、第１の
電子部品１と第２の電子部品２とを加熱した状態で押し
付け、先端に平坦部７を形成した金の突起電極４ａと第
２の電子部品２の金の突起電極４ｄとを固相接合する。Then, as shown in FIG. 8 (c), the first electronic component 1 and the second electronic component 2 are pressed in a heated state, and the gold protruding electrode 4a having the flat portion 7 formed at the tip is formed. The gold projection electrode 4d of the second electronic component 2 is solid-phase bonded.

【００８６】電極間の接合は、アルミナ配線基板１を３
００℃に、ＳｉＧｅ半導体素子２を２４０℃に加熱した
状態で、ＳｉＧｅ半導体素子２を１５Ｋｇの荷重で１０
秒間アルミナ配線基板１に押し付けてアルミナ配線基板
１上の金の突起電極４ａとＳｉＧｅ半導体素子２上の金
の突起電極４ｄとを接合すればよい。ここで、金の突起
電極は接合の直前に形成するので、接合時の金表面の汚
染状態は一定であり、安定した接合強度が得られる。The bonding between the electrodes is performed by connecting the alumina wiring board 1
While heating the SiGe semiconductor device 2 to 240 ° C. at 00 ° C., the SiGe semiconductor device 2 was
The gold bump electrode 4a on the alumina wiring board 1 and the gold bump electrode 4d on the SiGe semiconductor element 2 may be joined by pressing against the alumina wiring board 1 for 2 seconds. Here, since the gold protruding electrode is formed immediately before bonding, the state of contamination of the gold surface during bonding is constant, and stable bonding strength can be obtained.

【００８７】なお、突起電極の先端をあらかじめ平坦に
しておけば、実施の形態２で説明したように、高精度な
位置合わせが不要となり、位置合わせ時の認識回数が低
減でき、生産タクトが短縮でき、さらに、接合強度が向
上する効果も得られる。もちろん、アルミナ配線基板の
金の突起電極ではなくＳｉＧｅ半導体素子の金の突起電
極の先端部を平坦にしておいても同様の効果が得られ
る。If the tips of the protruding electrodes are flattened in advance, as described in the second embodiment, high-precision alignment is not required, the number of recognitions at the time of alignment can be reduced, and the production tact is reduced. And an effect of improving the bonding strength can be obtained. Of course, the same effect can be obtained by flattening the tip of the gold projecting electrode of the SiGe semiconductor element instead of the gold projecting electrode of the alumina wiring substrate.

【００８８】また、アルミナ配線基板とＳｉＧｅ半導体
素子の両方の金の突起電極の先端部を平坦にしておくと
突起電極はさらにすべり落ちにくくなり、その時、アル
ミナ配線基板またはＳｉＧｅ半導体素子の金の突起電極
のどちらか一方の平坦部の径が他方より大きくなるよう
に変形させておくと、平坦部径の小さい金の突起電極が
くさびのように食込んで接合強度が向上する効果が得ら
れる。If the tips of the gold protruding electrodes of both the alumina wiring substrate and the SiGe semiconductor device are flattened, the protruding electrodes are more difficult to slide down. If one of the electrodes is deformed so that the diameter of one flat portion is larger than the other, an effect is obtained in which the gold protruding electrode having a small flat portion bites like a wedge and the bonding strength is improved.

【００８９】以上のように、第１の電子部品１と第２の
電子部品２とを固相接合した後、図８（ｄ）に示すよう
に、第１の電子部品１と第２の電子部品２の隙間に熱硬
化型の樹脂１１を充填して樹脂を硬化させ、さらに、第
１の電子部品１の電極１ｂにはんだ電極１０を形成す
る。このはんだ電極１０を介して半導体装置が配線基板
等、他の電子部品に実装されることになる。As described above, after the first electronic component 1 and the second electronic component 2 are solid-phase bonded, as shown in FIG. 8D, the first electronic component 1 and the second electronic component 2 are joined together. The space between the components 2 is filled with a thermosetting resin 11 to cure the resin, and further, the solder electrodes 10 are formed on the electrodes 1 b of the first electronic component 1. The semiconductor device is mounted on another electronic component such as a wiring board via the solder electrodes 10.

【００９０】樹脂の充填は、アルミナ配線基板１とＳｉ
Ｇｅ半導体素子２との隙間にエポキシ系の熱硬化型樹脂
を充填した後、乾燥炉内で１５０℃の温度で１時間加熱
してエポキシ系樹脂を硬化させるようにすればよい。The resin was filled with the alumina wiring board 1 and Si
After filling the gap with the Ge semiconductor element 2 with an epoxy-based thermosetting resin, the epoxy-based resin may be cured by heating at 150 ° C. for 1 hour in a drying furnace.

【００９１】また、はんだ電極１０は実施の形態３と同
様にして形成すればよい。なお、はんだ電極は実施の形
態３と同様の材質のものを使用すればよく、はんだ電極
を形成する金属電極の表面は銀または銀の合金、銅また
は銅の合金、ニッケルでもよい。The solder electrode 10 may be formed in the same manner as in the third embodiment. Note that the same material as in Embodiment 3 may be used for the solder electrode, and the surface of the metal electrode forming the solder electrode may be silver or a silver alloy, copper or a copper alloy, or nickel.

【００９２】このようにアルミナ配線基板とＳｉＧｅ半
導体素子との隙間にエポキシ系の熱硬化型樹脂を充填す
ることで、外部からの衝撃やアルミナ配線基板とＳｉＧ
ｅ半導体素子との線膨張係数の差で生じる熱応力等でア
ルミナ配線基板とＳｉＧｅ半導体素子との接合部が破断
することが防止できる。さらにアルミナ配線基板やＳｉ
Ｇｅ半導体素子の金属電極、金属配線が外気中の汚染物
質に接触して腐食されることも防止できる。By filling the gap between the alumina wiring board and the SiGe semiconductor element with the epoxy-based thermosetting resin as described above, external shocks or the alumina wiring board and the SiG
It is possible to prevent the joint between the alumina wiring substrate and the SiGe semiconductor element from being broken due to thermal stress or the like caused by a difference in linear expansion coefficient from the e semiconductor element. In addition, alumina wiring boards and Si
It is also possible to prevent the metal electrode and the metal wiring of the Ge semiconductor element from being corroded by contact with a contaminant in the outside air.

【００９３】また、ＳｉＧｅ半導体素子の金の突起電極
を２段にするとアルミナ配線基板とＳｉＧｅ半導体素子
との隙間が大きくなって樹脂の進入が容易になるため、
気泡等の充填欠陥が生じにくくなる効果が得られる。Further, when the gold projecting electrodes of the SiGe semiconductor element are formed in two steps, the gap between the alumina wiring substrate and the SiGe semiconductor element becomes large and the resin can easily enter.
The effect of making it difficult to generate a filling defect such as a bubble is obtained.

【００９４】さらにアルミナ配線基板とＳｉＧｅ半導体
素子との線膨張係数の差で生じる熱応力もより低減され
てアルミナ配線基板とＳｉＧｅ半導体素子との接合部が
さらに破断しにくくなる。これらの効果は実装する電子
部品の寸法が大きくなればなるほど顕著となる。Further, the thermal stress caused by the difference in linear expansion coefficient between the alumina wiring substrate and the SiGe semiconductor element is further reduced, so that the joint between the alumina wiring substrate and the SiGe semiconductor element is harder to break. These effects become more remarkable as the size of the electronic component to be mounted increases.

【００９５】この実施の形態では、２段の突起電極はＳ
ｉＧｅ半導体素子に形成したが、ＳｉＧｅ半導体素子で
はなくアルミナ配線基板に形成してもよく、また、アル
ミナ配線基板とＳｉＧｅ半導体素子の両方に形成しても
同様の効果が得られる。もちろん突起電極は２段に限ら
ず３段以上に形成してもよいことは言うまでもない。In this embodiment, the two-stage projecting electrode is S
Although formed on the iGe semiconductor element, it may be formed not on the SiGe semiconductor element but on the alumina wiring substrate, or the same effect can be obtained by forming the element on both the alumina wiring substrate and the SiGe semiconductor element. Of course, it goes without saying that the protruding electrodes may be formed not only in two stages but also in three or more stages.

【００９６】[0096]

【発明の効果】本発明にかかる電子装置の製造方法は、
第１の電子部品の電極上に金または金合金からなる金属
ボールを超音波を印加しながら熱圧着し突起電極を形成
する工程と、第２の電子部品の電極上に金または金合金
からなる金属ボールを超音波を印加しながら熱圧着し突
起電極を形成する工程と、上記第１の電子部品上の突起
電極と上記第２の電子部品上の突起電極とが対応するよ
うに上記第１の電子部品と上記第２の電子部品とを位置
合わせし、上記第１の電子部品の突起電極と上記第２の
電子部品の突起電極とを加熱しながら押し付けて上記第
１の電子部品と上記第２の電子部品とを接合する工程と
を含んでいるので、電子部品の金属電極の表面状態によ
らず、安定して高い接合強度を有する電子部品を製造す
ることができる。According to the method for manufacturing an electronic device according to the present invention,
A step of forming a protruding electrode by applying heat and pressure to a metal ball made of gold or a gold alloy on the electrode of the first electronic component while applying ultrasonic waves; and forming a projecting electrode on the electrode of the second electronic component. A step of forming a protruding electrode by thermocompression bonding of a metal ball while applying ultrasonic waves, and a step of forming the protruding electrode on the first electronic component to correspond to the protruding electrode on the second electronic component. The electronic component and the second electronic component are aligned with each other, and the projecting electrodes of the first electronic component and the projecting electrodes of the second electronic component are pressed while being heated, and the first electronic component and the second electronic component are pressed. Since the method includes the step of bonding the second electronic component, the electronic component having a high bonding strength can be stably produced regardless of the surface state of the metal electrode of the electronic component.

【００９７】また、第１の電子部品上に形成される突起
電極の径と、第２の電子部品上に形成される突起電極の
径とが異なる場合には、高精度な位置合わせの必要がな
く、さらに、接合強度を向上させることができる。If the diameter of the protruding electrode formed on the first electronic component is different from the diameter of the protruding electrode formed on the second electronic component, it is necessary to perform highly accurate alignment. In addition, the bonding strength can be further improved.

【００９８】また、位置合わせの前に、第１又は第２の
電子部品上に形成された突起電極の先端に平坦部を形成
する場合には、高精度な位置合わせが不要となる。If a flat portion is formed at the tip of the protruding electrode formed on the first or second electronic component before the positioning, high-precision positioning is not required.

【００９９】また、突起電極の先端を加熱しながら平坦
部を形成する場合には、高精度な位置合わせの必要がな
く、さらに、接合強度を向上させることができる。In the case where a flat portion is formed while heating the tip of the protruding electrode, there is no need for high-precision alignment, and the bonding strength can be further improved.

【０１００】また、第１及び第２の電子部品がそれぞれ
複数の電極を有し、各電極毎に金または金合金からなる
金属ボールを超音波を印加しながら熱圧着し上記複数の
電極上に複数の突起電極を形成する場合には、大きな超
音波振動の印加を必要とせず、脆弱な電子部品でも、実
装時に破損しないようにすることができる。Each of the first and second electronic components has a plurality of electrodes, and a metal ball made of gold or a gold alloy is thermocompression-bonded to each of the electrodes while applying ultrasonic waves to each of the plurality of electrodes. When a plurality of protruding electrodes are formed, it is not necessary to apply large ultrasonic vibration, and even a fragile electronic component can be prevented from being damaged during mounting.

【０１０１】さらに、突起電極を形成する工程が、第１
又は第２の電子部品の電極上に金または金合金からなる
第１の突起電極を形成する工程と、この第１の突起電極
上に金または金合金からなる金属ボールを超音波を印加
しながら熱圧着し第２の突起電極を形成する工程とを含
んでいる場合には、第１の電子部品と第２の電子部品と
の隙間を大きくすることができ、樹脂封止する場合に、
樹脂の進入を容易にすることができる。Further, the step of forming the protruding electrode includes the first step.
Alternatively, a step of forming a first protruding electrode made of gold or a gold alloy on the electrode of the second electronic component, and forming a metal ball made of gold or a gold alloy on the first protruding electrode while applying ultrasonic waves. When the step of forming the second protruding electrode by thermocompression bonding is included, the gap between the first electronic component and the second electronic component can be increased.
It is possible to easily enter the resin.

【０１０２】また、本発明にかかる電子装置は、電極を
有する第１の電子部品と、上記第１の電子部品に対向し
て配置され上記第１の電子部品の電極に対応する位置に
電極を有する第２の電子部品と、上記第１の電子部品の
電極上に形成されその形状が球を押しつぶしたような形
状をしている第１の導電体と、上記第１の導電体と電気
的に接続されるように上記第２の電子部品の電極上に形
成されその形状が球を押しつぶしたような形状をしてお
りその径が上記第１の導電体の径と異なる第２の導電体
とを備えているので、接合強度の高い電子装置を提供で
きる。The electronic device according to the present invention includes a first electronic component having an electrode, and an electrode disposed at a position corresponding to the electrode of the first electronic component, the electrode being located opposite to the first electronic component. A second electronic component, a first conductor formed on an electrode of the first electronic component, the shape of which is shaped like a crushed sphere, and an electrical connection between the first conductor and the first conductor. A second conductor formed on the electrode of the second electronic component so as to be connected to the second conductor and having a shape like a crushed sphere and having a diameter different from that of the first conductor Therefore, an electronic device having high bonding strength can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の実施の形態１による電子装置の製造
方法を示す断面図である。FIG. 1 is a sectional view illustrating a method for manufacturing an electronic device according to a first embodiment of the present invention.

【図２】 本発明の実施の形態１による電子装置の製造
方法を示す断面図である。FIG. 2 is a sectional view illustrating the method for manufacturing the electronic device according to the first embodiment of the present invention.

【図３】 本発明の実施の形態２による電子装置の製造
方法を示す断面図である。FIG. 3 is a sectional view illustrating a method of manufacturing an electronic device according to a second embodiment of the present invention.

【図４】 本発明の実施の形態２による電子装置の製造
方法を示す断面図である。FIG. 4 is a sectional view illustrating the method for manufacturing the electronic device according to the second embodiment of the present invention.

【図５】 本発明の実施の形態３による電子装置および
その製造方法を示す断面図である。FIG. 5 is a cross-sectional view illustrating an electronic device and a method of manufacturing the same according to a third embodiment of the present invention.

【図６】 本発明の実施の形態３による電子装置および
その製造方法を示す断面図である。FIG. 6 is a cross-sectional view showing an electronic device and a method of manufacturing the same according to a third embodiment of the present invention.

【図７】 本発明の実施の形態４による電子装置の製造
方法を示す断面図である。FIG. 7 is a sectional view illustrating the method for manufacturing the electronic device according to the fourth embodiment of the present invention.

【図８】 本発明の実施の形態４による電子装置の製造
方法を示す断面図である。FIG. 8 is a sectional view illustrating the method for manufacturing the electronic device according to the fourth embodiment of the present invention.

【図９】 従来の電子装置の製造方法を示す断面図であ
る。FIG. 9 is a cross-sectional view illustrating a method for manufacturing a conventional electronic device.

【図１０】 従来の電子装置の製造方法を示す断面図で
ある。FIG. 10 is a cross-sectional view illustrating a method for manufacturing a conventional electronic device.

【符号の説明】[Explanation of symbols]

１ 第１の電子部品 １ａ、１ｂ 第１の電子部
品の金属電極 ２ 第２の電子部品 ２ａ 第２の電子部品の金
属電極 ３ 金ワイヤ ３ａ 金ボール ４ａ、４ｂ、４ｃ、４ｄ 突起電極 ５ キャピラリツール ６ 超音波振動 ７ 平坦部 ８ 平板 ９ スルーホール ９ａ 金属層 １０ はんだ電極 １１ 熱硬化型の樹脂 １０１ キャピラリツール １０２ 金ワイヤ １０３ 金ボール １０４、１１４ 超音波
振動 １０５、１１１ 第１の電子部品 １０５ａ、１１１ａ 第１の電子部品の金属電極 １０６、１１３ 突起電極 １０７、１１２ 第２の
電子部品 １０７ａ、１１２ａ 第２の電子部品の金属電極DESCRIPTION OF SYMBOLS 1 1st electronic component 1a, 1b Metal electrode of 1st electronic component 2 2nd electronic component 2a Metal electrode of 2nd electronic component 3 Gold wire 3a Gold ball 4a, 4b, 4c, 4d Projection electrode 5 Capillary tool Reference Signs List 6 ultrasonic vibration 7 flat part 8 flat plate 9 through hole 9a metal layer 10 solder electrode 11 thermosetting resin 101 capillary tool 102 gold wire 103 gold ball 104, 114 ultrasonic vibration 105, 111 first electronic component 105a, 111a Metal electrode 106, 113 of first electronic component Projection electrode 107, 112 Second electronic component 107a, 112a Metal electrode of second electronic component

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 25/07 25/18 (72)発明者 北村 洋一 東京都千代田区丸の内二丁目２番３号 三 菱電機株式会社内 Ｆターム(参考） 5F044 AA00 BB11 FF04 KK04 KK17 KK18 KK19 LL15 PP17 QQ02 QQ03 QQ04 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 25/07 25/18 (72) Inventor Yoichi Kitamura 2-3-2 Marunouchi 2-chome, Chiyoda-ku, Tokyo F term (reference) 5F044 AA00 BB11 FF04 KK04 KK17 KK18 KK19 LL15 PP17 QQ02 QQ03 QQ04

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】 第１の電子部品の電極上に金または金合
金からなる金属ボールを超音波を印加しながら熱圧着し
突起電極を形成する工程と、第２の電子部品の電極上に
金または金合金からなる金属ボールを超音波を印加しな
がら熱圧着し突起電極を形成する工程と、上記第１の電
子部品上の突起電極と上記第２の電子部品上の突起電極
とが対応するように上記第１の電子部品と上記第２の電
子部品とを位置合わせし、上記第１の電子部品の突起電
極と上記第２の電子部品の突起電極とを加熱しながら押
し付けて上記第１の電子部品と上記第２の電子部品とを
接合する工程とを含んでいることを特徴とする電子装置
の製造方法。1. A step of forming a protruding electrode by thermocompression bonding a metal ball made of gold or a gold alloy on an electrode of a first electronic component while applying an ultrasonic wave, and forming a gold electrode on an electrode of a second electronic component. Alternatively, the step of forming a protruding electrode by thermocompression bonding a metal ball made of a gold alloy while applying ultrasonic waves corresponds to the protruding electrode on the first electronic component and the protruding electrode on the second electronic component. As described above, the first electronic component and the second electronic component are aligned with each other, and the first electronic component and the second electronic component are pressed against each other while being heated, and the first electronic component is pressed against the first electronic component. Bonding the electronic component to the second electronic component. A method for manufacturing an electronic device, comprising: 【請求項２】 第１の電子部品上に形成される突起電極
の径と、第２の電子部品上に形成される突起電極の径と
が異なることを特徴とする請求項１記載の電子装置の製
造方法。2. The electronic device according to claim 1, wherein a diameter of the protruding electrode formed on the first electronic component is different from a diameter of the protruding electrode formed on the second electronic component. Manufacturing method. 【請求項３】 位置合わせの前に、第１又は第２の電子
部品上に形成された突起電極の先端に平坦部を形成する
ことを特徴とする請求項１記載の電子装置の製造方法。3. The method of manufacturing an electronic device according to claim 1, wherein a flat portion is formed at a tip of the protruding electrode formed on the first or second electronic component before the alignment. 【請求項４】 突起電極の先端を加熱しながら平坦部を
形成することを特徴とする請求項３記載の電子装置の製
造方法。4. The method according to claim 3, wherein the flat portion is formed while heating the tip of the protruding electrode. 【請求項５】 第１及び第２の電子部品はそれぞれ複数
の電極を有しており、各電極毎に金または金合金からな
る金属ボールを超音波を印加しながら熱圧着し上記複数
の電極上に複数の突起電極を形成することを特徴とする
請求項１記載の電子装置の製造方法。5. The first and second electronic components each have a plurality of electrodes, and a metal ball made of gold or a gold alloy is thermocompression-bonded to each of the electrodes while applying ultrasonic waves to each of the plurality of electrodes. 2. The method for manufacturing an electronic device according to claim 1, wherein a plurality of protruding electrodes are formed thereon. 【請求項６】 突起電極を形成する工程は、第１又は第
２の電子部品の電極上に金または金合金からなる第１の
突起電極を形成する工程と、この第１の突起電極上に金
または金合金からなる金属ボールを超音波を印加しなが
ら熱圧着し第２の突起電極を形成する工程とを含んでい
ることを特徴とする請求項１記載の電子装置の製造方
法。6. The step of forming a protruding electrode includes forming a first protruding electrode made of gold or a gold alloy on an electrode of the first or second electronic component, and forming the first protruding electrode on the first protruding electrode. 2. The method of manufacturing an electronic device according to claim 1, further comprising: a step of thermocompression-bonding a metal ball made of gold or a gold alloy while applying ultrasonic waves to form a second protruding electrode. 【請求項７】 電極を有する第１の電子部品と、上記第
１の電子部品に対向して配置され上記第１の電子部品の
電極に対応する位置に電極を有する第２の電子部品と、
上記第１の電子部品の電極上に形成されその形状が球を
押しつぶしたような形状をしている第１の導電体と、上
記第１の導電体と電気的に接続されるように上記第２の
電子部品の電極上に形成されその形状が球を押しつぶし
たような形状をしておりその径が上記第１の導電体の径
と異なる第２の導電体とを備えていることを特徴とする
電子装置。7. A first electronic component having an electrode, a second electronic component disposed to face the first electronic component and having an electrode at a position corresponding to an electrode of the first electronic component,
A first conductor formed on an electrode of the first electronic component and having a shape that crushes a sphere; and a first conductor that is electrically connected to the first conductor. A second conductor formed on the electrode of the second electronic component and having a shape like a crushed sphere, the diameter of which is different from the diameter of the first conductor. Electronic device.
JP2001095639A 2001-03-29 2001-03-29 Manufacturing method of electronic device and the electronic device Pending JP2002299371A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286666A (en) * 2005-03-31 2006-10-19 Toshiba Corp Method of manufacturing semiconductor device
JP2016164950A (en) * 2015-03-06 2016-09-08 三菱重工業株式会社 Joining method and joined body

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286666A (en) * 2005-03-31 2006-10-19 Toshiba Corp Method of manufacturing semiconductor device
JP4709563B2 (en) * 2005-03-31 2011-06-22 株式会社東芝 Manufacturing method of semiconductor device
JP2016164950A (en) * 2015-03-06 2016-09-08 三菱重工業株式会社 Joining method and joined body
EP3255659A4 (en) * 2015-03-06 2018-04-11 Mitsubishi Heavy Industries, Ltd. Bonding method and bonded body

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