JP2002299315A5 - - Google Patents

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Publication number
JP2002299315A5
JP2002299315A5 JP2001095306A JP2001095306A JP2002299315A5 JP 2002299315 A5 JP2002299315 A5 JP 2002299315A5 JP 2001095306 A JP2001095306 A JP 2001095306A JP 2001095306 A JP2001095306 A JP 2001095306A JP 2002299315 A5 JP2002299315 A5 JP 2002299315A5
Authority
JP
Japan
Prior art keywords
processed
substrate
processing
group
substrate group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2001095306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002299315A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001095306A priority Critical patent/JP2002299315A/ja
Priority claimed from JP2001095306A external-priority patent/JP2002299315A/ja
Priority to TW091105746A priority patent/TW538435B/zh
Priority to US10/107,434 priority patent/US6911398B2/en
Priority to KR10-2002-0017006A priority patent/KR100464579B1/ko
Priority to CNB021087113A priority patent/CN1197122C/zh
Publication of JP2002299315A publication Critical patent/JP2002299315A/ja
Publication of JP2002299315A5 publication Critical patent/JP2002299315A5/ja
Abandoned legal-status Critical Current

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JP2001095306A 2001-03-29 2001-03-29 半導体装置の製造方法 Abandoned JP2002299315A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001095306A JP2002299315A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法
TW091105746A TW538435B (en) 2001-03-29 2002-03-25 Method of making semiconductor device
US10/107,434 US6911398B2 (en) 2001-03-29 2002-03-28 Method of sequentially processing a plurality of lots each including semiconductor substrates
KR10-2002-0017006A KR100464579B1 (ko) 2001-03-29 2002-03-28 반도체 장치 제조 방법
CNB021087113A CN1197122C (zh) 2001-03-29 2002-03-29 制造半导体器件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001095306A JP2002299315A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002299315A JP2002299315A (ja) 2002-10-11
JP2002299315A5 true JP2002299315A5 (OSRAM) 2005-06-16

Family

ID=18949375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001095306A Abandoned JP2002299315A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US6911398B2 (OSRAM)
JP (1) JP2002299315A (OSRAM)
KR (1) KR100464579B1 (OSRAM)
CN (1) CN1197122C (OSRAM)
TW (1) TW538435B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221313A (ja) * 2003-01-15 2004-08-05 Kawasaki Microelectronics Kk 半導体製造工程の管理方法および半導体製造ラインの管理システム
US7113253B2 (en) * 2003-09-16 2006-09-26 Asml Netherlands B.V. Method, apparatus and computer product for substrate processing
KR101089841B1 (ko) * 2006-07-31 2011-12-05 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 프로그램, 기억 매체 및 컨디셔닝 필요여부 결정 방법
JP2009024229A (ja) * 2007-07-20 2009-02-05 Hitachi Kokusai Electric Inc 基板処理装置
JP5220447B2 (ja) * 2008-03-17 2013-06-26 東京エレクトロン株式会社 基板処理システムの洗浄方法、記憶媒体及び基板処理システム
JP2010098053A (ja) * 2008-10-15 2010-04-30 Tokyo Electron Ltd クリーニング方法及び記録媒体
JP5431901B2 (ja) * 2008-12-26 2014-03-05 キヤノンアネルバ株式会社 インライン真空処理装置、インライン真空処理装置の制御方法、情報記録媒体の製造方法
US10157741B1 (en) * 2017-07-31 2018-12-18 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing a semiconductor structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0785155A (ja) * 1993-06-23 1995-03-31 Sony Corp ロット管理装置
JP3522912B2 (ja) * 1994-08-01 2004-04-26 東京エレクトロン株式会社 洗浄処理装置およびその制御方法
US5985032A (en) * 1995-05-17 1999-11-16 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus
JPH10149990A (ja) 1996-11-19 1998-06-02 Kokusai Electric Co Ltd ガスクリーニング方法
JPH10199817A (ja) 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
US6280790B1 (en) * 1997-06-30 2001-08-28 Applied Materials, Inc. Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
US6425953B1 (en) * 1997-11-14 2002-07-30 Tokyo Electron Limited All-surface biasable and/or temperature-controlled electrostatically-shielded RF plasma source
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
KR19990076407A (ko) * 1998-03-31 1999-10-15 윤종용 반도체장치의 제조공정에 있어서의 박막 형성방법
TW417154B (en) * 1998-08-05 2001-01-01 Tokyo Electron Ltd Coating and developing method and apparatus therefor
KR100331779B1 (ko) * 1999-07-02 2002-04-09 김광교 반도체 세정설비의 구동 제어방법
JP2001351868A (ja) * 2000-06-07 2001-12-21 Hitachi Kokusai Electric Inc 半導体製造装置

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