JP2002198357A - 半導体製造装置のクリーニングガス及びクリーニング方法 - Google Patents
半導体製造装置のクリーニングガス及びクリーニング方法Info
- Publication number
- JP2002198357A JP2002198357A JP2000397269A JP2000397269A JP2002198357A JP 2002198357 A JP2002198357 A JP 2002198357A JP 2000397269 A JP2000397269 A JP 2000397269A JP 2000397269 A JP2000397269 A JP 2000397269A JP 2002198357 A JP2002198357 A JP 2002198357A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- gas
- manufacturing apparatus
- semiconductor manufacturing
- cleaning gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000397269A JP2002198357A (ja) | 2000-12-27 | 2000-12-27 | 半導体製造装置のクリーニングガス及びクリーニング方法 |
| TW090117438A TWI291201B (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| HK03104036.5A HK1051934B (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| KR10-2002-7003222A KR100485743B1 (ko) | 2000-07-18 | 2001-07-17 | 반도체 생산 설비용 세정 가스 |
| US10/088,306 US20030056388A1 (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| AU2001271063A AU2001271063A1 (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| CNB018020372A CN1214444C (zh) | 2000-07-18 | 2001-07-17 | 用于半导体生产设备的净化气 |
| PCT/JP2001/006164 WO2002007194A2 (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000397269A JP2002198357A (ja) | 2000-12-27 | 2000-12-27 | 半導体製造装置のクリーニングガス及びクリーニング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002198357A true JP2002198357A (ja) | 2002-07-12 |
| JP2002198357A5 JP2002198357A5 (enExample) | 2004-08-05 |
Family
ID=18862413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000397269A Pending JP2002198357A (ja) | 2000-07-18 | 2000-12-27 | 半導体製造装置のクリーニングガス及びクリーニング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002198357A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021653A1 (en) * | 2001-08-30 | 2003-03-13 | Research Institute Of Innovative Technology For The Earth | Plasma cleaning gas and plasma cleaning method |
| WO2017159511A1 (ja) * | 2016-03-16 | 2017-09-21 | 日本ゼオン株式会社 | プラズマエッチング方法 |
-
2000
- 2000-12-27 JP JP2000397269A patent/JP2002198357A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021653A1 (en) * | 2001-08-30 | 2003-03-13 | Research Institute Of Innovative Technology For The Earth | Plasma cleaning gas and plasma cleaning method |
| US7322368B2 (en) | 2001-08-30 | 2008-01-29 | Asahi Glass Co Ltd | Plasma cleaning gas and plasma cleaning method |
| WO2017159511A1 (ja) * | 2016-03-16 | 2017-09-21 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| CN108780749A (zh) * | 2016-03-16 | 2018-11-09 | 日本瑞翁株式会社 | 等离子体蚀刻方法 |
| CN108780749B (zh) * | 2016-03-16 | 2022-10-14 | 日本瑞翁株式会社 | 等离子体蚀刻方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060328 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060525 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061003 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070220 |