JP2002190452A5 - - Google Patents
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- Publication number
- JP2002190452A5 JP2002190452A5 JP2001313318A JP2001313318A JP2002190452A5 JP 2002190452 A5 JP2002190452 A5 JP 2002190452A5 JP 2001313318 A JP2001313318 A JP 2001313318A JP 2001313318 A JP2001313318 A JP 2001313318A JP 2002190452 A5 JP2002190452 A5 JP 2002190452A5
- Authority
- JP
- Japan
- Prior art keywords
- light source
- lamp
- lamp light
- radiation
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 42
- 238000000034 method Methods 0.000 claims 25
- 238000010438 heat treatment Methods 0.000 claims 19
- 230000005855 radiation Effects 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 12
- 239000003507 refrigerant Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 4
- 239000012528 membrane Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 2
- 239000002826 coolant Substances 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 2
- 229910052753 mercury Inorganic materials 0.000 claims 2
- 229910001507 metal halide Inorganic materials 0.000 claims 2
- 150000005309 metal halides Chemical class 0.000 claims 2
- 229910052708 sodium Inorganic materials 0.000 claims 2
- 239000011734 sodium Substances 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001313318A JP4004765B2 (ja) | 2000-10-10 | 2001-10-10 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000309887 | 2000-10-10 | ||
| JP2000-309887 | 2000-10-10 | ||
| JP2001313318A JP4004765B2 (ja) | 2000-10-10 | 2001-10-10 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002190452A JP2002190452A (ja) | 2002-07-05 |
| JP2002190452A5 true JP2002190452A5 (enrdf_load_stackoverflow) | 2005-06-23 |
| JP4004765B2 JP4004765B2 (ja) | 2007-11-07 |
Family
ID=26601827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001313318A Expired - Fee Related JP4004765B2 (ja) | 2000-10-10 | 2001-10-10 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4004765B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100962054B1 (ko) | 2000-12-05 | 2010-06-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| JP5130463B2 (ja) * | 2001-03-28 | 2013-01-30 | 独立行政法人産業技術総合研究所 | 薄膜半導体素子の製造方法 |
| KR101025444B1 (ko) * | 2003-10-28 | 2011-03-30 | 엘지디스플레이 주식회사 | 급속열처리장치 및 이를 이용한 이온활성화 방법 |
| JP5294231B2 (ja) * | 2007-03-26 | 2013-09-18 | 国立大学法人 奈良先端科学技術大学院大学 | 薄膜トランジスタの製造方法 |
| JP5465828B2 (ja) * | 2007-10-01 | 2014-04-09 | 株式会社日立国際電気 | 基板処理装置及び半導体デバイスの製造方法 |
| JP5374109B2 (ja) * | 2008-10-17 | 2013-12-25 | 株式会社アルバック | 加熱真空処理方法 |
| JP5202723B2 (ja) | 2009-02-27 | 2013-06-05 | 株式会社アルバック | 真空加熱装置、真空加熱処理方法 |
| KR101729724B1 (ko) * | 2014-12-26 | 2017-04-25 | 주식회사 비아트론 | 복수 열원을 포함하는 코팅층 열처리 장치 및 이를 이용한 열처리 방법 |
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2001
- 2001-10-10 JP JP2001313318A patent/JP4004765B2/ja not_active Expired - Fee Related