JP2002184569A - 発光装置 - Google Patents
発光装置Info
- Publication number
- JP2002184569A JP2002184569A JP2001302179A JP2001302179A JP2002184569A JP 2002184569 A JP2002184569 A JP 2002184569A JP 2001302179 A JP2001302179 A JP 2001302179A JP 2001302179 A JP2001302179 A JP 2001302179A JP 2002184569 A JP2002184569 A JP 2002184569A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- substrate
- emitting device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 229910052760 oxygen Inorganic materials 0.000 abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 31
- 239000001301 oxygen Substances 0.000 abstract description 31
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
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- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
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- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 2
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- 229910001128 Sn alloy Inorganic materials 0.000 description 2
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- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 230000002542 deteriorative effect Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
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- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 101100214497 Solanum lycopersicum TFT5 gene Proteins 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
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- 239000001110 calcium chloride Substances 0.000 description 1
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- 238000010549 co-Evaporation Methods 0.000 description 1
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- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
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- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
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- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001302179A JP2002184569A (ja) | 2000-10-03 | 2001-09-28 | 発光装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000304246 | 2000-10-03 | ||
| JP2000-304246 | 2000-10-03 | ||
| JP2001302179A JP2002184569A (ja) | 2000-10-03 | 2001-09-28 | 発光装置 |
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| JP2004146244A (ja) * | 2002-10-25 | 2004-05-20 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2004152563A (ja) * | 2002-10-30 | 2004-05-27 | Canon Inc | 表示装置 |
| JP2005011601A (ja) * | 2003-06-17 | 2005-01-13 | Tadahiro Omi | 有機ｅｌ発光素子、その製造方法および表示装置 |
| JP2005019338A (ja) * | 2003-06-27 | 2005-01-20 | Tadahiro Omi | 有機ｅｌ発光素子、その製造方法および表示装置 |
| JP2005182056A (ja) * | 2003-12-23 | 2005-07-07 | Barco Nv | タイル状に配置された大画面の放射ディスプレイを制御するための方法、コンピュータプログラムプロダクト、機械読取り可能なデータ記憶装置、コンピュータプログラムプロダクトの伝送および制御ユニット |
| JP2005251769A (ja) * | 2005-06-01 | 2005-09-15 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2005251768A (ja) * | 2005-06-01 | 2005-09-15 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2007501510A (ja) * | 2003-08-05 | 2007-01-25 | テヒニシェ・ウニベルジテート・ブラウンシュバイク・カロロ−ビルヘルミナ | バリア層または封入としての疎水性線状または２次元の多環式芳香族化合物からなる層の使用およびこのタイプの層により構築され、有機ポリマーを含む電子部品 |
| JP2008508682A (ja) * | 2004-07-27 | 2008-03-21 | イーストマン コダック カンパニー | トップ−エミッション型ｏｌｅｄのための乾燥剤 |
| US7453094B2 (en) | 2002-09-20 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus and fabrication method of the same |
| WO2009004690A1 (ja) * | 2007-06-29 | 2009-01-08 | Pioneer Corporation | 有機半導体デバイスおよび有機半導体デバイスの製造方法 |
| JP2009087951A (ja) * | 2009-01-28 | 2009-04-23 | Tohoku Pioneer Corp | 有機ｅｌ表示装置及びその製造方法 |
| EP2128909A1 (en) | 2004-11-22 | 2009-12-02 | Samsung Mobile Display Co., Ltd. | Sealant pattern for flat display panel |
| US7887385B2 (en) | 2004-09-24 | 2011-02-15 | Canon Kabushiki Kaisha | Organic EL light emitting element, manufacturing method thereof, and display device |
| JP2012033497A (ja) * | 2004-09-29 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| KR101189154B1 (ko) | 2006-06-08 | 2012-11-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| WO2014123067A1 (ja) * | 2013-02-08 | 2014-08-14 | シャープ株式会社 | エレクトロルミネッセンス装置 |
| CN113543397A (zh) * | 2020-04-14 | 2021-10-22 | 双叶电子工业株式会社 | 有机el器件 |
| JP2023040309A (ja) * | 2009-07-02 | 2023-03-22 | 株式会社半導体エネルギー研究所 | 発光装置 |
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| US8779658B2 (en) | 2002-10-25 | 2014-07-15 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US9065074B2 (en) | 2002-10-25 | 2015-06-23 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| JP2004146244A (ja) * | 2002-10-25 | 2004-05-20 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| US9450204B2 (en) | 2002-10-25 | 2016-09-20 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| JP2004152563A (ja) * | 2002-10-30 | 2004-05-27 | Canon Inc | 表示装置 |
| JP2005011601A (ja) * | 2003-06-17 | 2005-01-13 | Tadahiro Omi | 有機ｅｌ発光素子、その製造方法および表示装置 |
| JP2005019338A (ja) * | 2003-06-27 | 2005-01-20 | Tadahiro Omi | 有機ｅｌ発光素子、その製造方法および表示装置 |
| JP2007501510A (ja) * | 2003-08-05 | 2007-01-25 | テヒニシェ・ウニベルジテート・ブラウンシュバイク・カロロ−ビルヘルミナ | バリア層または封入としての疎水性線状または２次元の多環式芳香族化合物からなる層の使用およびこのタイプの層により構築され、有機ポリマーを含む電子部品 |
| JP2005182056A (ja) * | 2003-12-23 | 2005-07-07 | Barco Nv | タイル状に配置された大画面の放射ディスプレイを制御するための方法、コンピュータプログラムプロダクト、機械読取り可能なデータ記憶装置、コンピュータプログラムプロダクトの伝送および制御ユニット |
| JP2008508682A (ja) * | 2004-07-27 | 2008-03-21 | イーストマン コダック カンパニー | トップ−エミッション型ｏｌｅｄのための乾燥剤 |
| US7887385B2 (en) | 2004-09-24 | 2011-02-15 | Canon Kabushiki Kaisha | Organic EL light emitting element, manufacturing method thereof, and display device |
| US10038040B2 (en) | 2004-09-29 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US10937847B2 (en) | 2004-09-29 | 2021-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| JP2012033497A (ja) * | 2004-09-29 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US11778870B2 (en) | 2004-09-29 | 2023-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US11552145B2 (en) | 2004-09-29 | 2023-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US11233105B2 (en) | 2004-09-29 | 2022-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US10403697B2 (en) | 2004-09-29 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US9147713B2 (en) | 2004-09-29 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US9893130B2 (en) | 2004-09-29 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| US9530829B2 (en) | 2004-09-29 | 2016-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic apparatus, and method of fabricating the display device |
| EP2128909A1 (en) | 2004-11-22 | 2009-12-02 | Samsung Mobile Display Co., Ltd. | Sealant pattern for flat display panel |
| JP2005251768A (ja) * | 2005-06-01 | 2005-09-15 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2005251769A (ja) * | 2005-06-01 | 2005-09-15 | Seiko Epson Corp | 電気光学装置及び電子機器 |
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| WO2009004690A1 (ja) * | 2007-06-29 | 2009-01-08 | Pioneer Corporation | 有機半導体デバイスおよび有機半導体デバイスの製造方法 |
| JP2009087951A (ja) * | 2009-01-28 | 2009-04-23 | Tohoku Pioneer Corp | 有機ｅｌ表示装置及びその製造方法 |
| JP2023040309A (ja) * | 2009-07-02 | 2023-03-22 | 株式会社半導体エネルギー研究所 | 発光装置 |
| WO2014123067A1 (ja) * | 2013-02-08 | 2014-08-14 | シャープ株式会社 | エレクトロルミネッセンス装置 |
| CN113543397A (zh) * | 2020-04-14 | 2021-10-22 | 双叶电子工业株式会社 | 有机el器件 |
| JP2021170434A (ja) * | 2020-04-14 | 2021-10-28 | 双葉電子工業株式会社 | 有機ｅｌデバイス |
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