JP2002176001A - 熱処理装置 - Google Patents

熱処理装置

Info

Publication number
JP2002176001A
JP2002176001A JP2000370783A JP2000370783A JP2002176001A JP 2002176001 A JP2002176001 A JP 2002176001A JP 2000370783 A JP2000370783 A JP 2000370783A JP 2000370783 A JP2000370783 A JP 2000370783A JP 2002176001 A JP2002176001 A JP 2002176001A
Authority
JP
Japan
Prior art keywords
substrate
heat treatment
processing chamber
light source
refrigerant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000370783A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002176001A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Koji Oriki
浩二 大力
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000370783A priority Critical patent/JP2002176001A/ja
Publication of JP2002176001A publication Critical patent/JP2002176001A/ja
Publication of JP2002176001A5 publication Critical patent/JP2002176001A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Control Of Resistance Heating (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000370783A 2000-12-05 2000-12-05 熱処理装置 Withdrawn JP2002176001A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000370783A JP2002176001A (ja) 2000-12-05 2000-12-05 熱処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000370783A JP2002176001A (ja) 2000-12-05 2000-12-05 熱処理装置

Publications (2)

Publication Number Publication Date
JP2002176001A true JP2002176001A (ja) 2002-06-21
JP2002176001A5 JP2002176001A5 (enExample) 2008-01-24

Family

ID=18840609

Family Applications (1)

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JP2000370783A Withdrawn JP2002176001A (ja) 2000-12-05 2000-12-05 熱処理装置

Country Status (1)

Country Link
JP (1) JP2002176001A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073953A (ja) * 2005-09-06 2007-03-22 Tera Semicon Corp 多結晶シリコン薄膜製造方法及びその製造装置
US7575985B2 (en) 2000-12-05 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
CN115347125A (zh) * 2022-10-18 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种钙钛矿材料快速原位退火的方法及退火装置
JP2024111673A (ja) * 2023-02-06 2024-08-19 メトロ電気工業株式会社 加熱装置

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938584A (ja) * 1982-08-30 1984-03-02 ウシオ電機株式会社 照射加熱炉の運転方法
JPS6229131A (ja) * 1985-07-31 1987-02-07 Hitachi Ltd 薄膜形成方法
JPS63200526A (ja) 1987-02-17 1988-08-18 Shinetsu Sekiei Kk 減圧熱処理装置に用いられる反応管
JPH05198507A (ja) * 1991-09-21 1993-08-06 Semiconductor Energy Lab Co Ltd 半導体作製方法
JPH06268242A (ja) 1993-03-17 1994-09-22 Matsushita Electric Ind Co Ltd シリコン基板の製造方法および結晶質シリコン太陽電池
JPH0729839A (ja) * 1993-07-15 1995-01-31 Sony Corp 熱処理装置及びこれを用いた熱処理方法
JPH07169974A (ja) 1993-09-20 1995-07-04 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH0851076A (ja) 1994-05-30 1996-02-20 Sanyo Electric Co Ltd 半導体装置，半導体装置の製造方法，薄膜トランジスタ ，薄膜トランジスタの製造方法，表示装置
JPH08264472A (ja) * 1995-03-24 1996-10-11 Hitachi Ltd 半導体装置の製造方法及び半導体製造装置
JPH08330602A (ja) 1995-03-27 1996-12-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0951100A (ja) * 1995-08-04 1997-02-18 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH1070077A (ja) * 1996-07-24 1998-03-10 Internatl Business Mach Corp <Ibm> パルス状の急速な熱アニーリングによる多結晶シリコンの成長方法
JPH1197706A (ja) 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2000031777A1 (en) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Fast heating and cooling apparatus for semiconductor wafers
JP2000260710A (ja) 1999-03-11 2000-09-22 Seiko Epson Corp 半導体装置の製造方法及びアニール装置

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938584A (ja) * 1982-08-30 1984-03-02 ウシオ電機株式会社 照射加熱炉の運転方法
JPS6229131A (ja) * 1985-07-31 1987-02-07 Hitachi Ltd 薄膜形成方法
JPS63200526A (ja) 1987-02-17 1988-08-18 Shinetsu Sekiei Kk 減圧熱処理装置に用いられる反応管
JPH05198507A (ja) * 1991-09-21 1993-08-06 Semiconductor Energy Lab Co Ltd 半導体作製方法
JPH06268242A (ja) 1993-03-17 1994-09-22 Matsushita Electric Ind Co Ltd シリコン基板の製造方法および結晶質シリコン太陽電池
JPH0729839A (ja) * 1993-07-15 1995-01-31 Sony Corp 熱処理装置及びこれを用いた熱処理方法
JPH07169974A (ja) 1993-09-20 1995-07-04 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH0851076A (ja) 1994-05-30 1996-02-20 Sanyo Electric Co Ltd 半導体装置，半導体装置の製造方法，薄膜トランジスタ ，薄膜トランジスタの製造方法，表示装置
JPH08264472A (ja) * 1995-03-24 1996-10-11 Hitachi Ltd 半導体装置の製造方法及び半導体製造装置
JPH08330602A (ja) 1995-03-27 1996-12-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0951100A (ja) * 1995-08-04 1997-02-18 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH1070077A (ja) * 1996-07-24 1998-03-10 Internatl Business Mach Corp <Ibm> パルス状の急速な熱アニーリングによる多結晶シリコンの成長方法
JPH1197706A (ja) 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2000031777A1 (en) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Fast heating and cooling apparatus for semiconductor wafers
JP2000260710A (ja) 1999-03-11 2000-09-22 Seiko Epson Corp 半導体装置の製造方法及びアニール装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7575985B2 (en) 2000-12-05 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JP2007073953A (ja) * 2005-09-06 2007-03-22 Tera Semicon Corp 多結晶シリコン薄膜製造方法及びその製造装置
CN115347125A (zh) * 2022-10-18 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种钙钛矿材料快速原位退火的方法及退火装置
JP2024111673A (ja) * 2023-02-06 2024-08-19 メトロ電気工業株式会社 加熱装置
JP7661376B2 (ja) 2023-02-06 2025-04-14 メトロ電気工業株式会社 加熱装置

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