JP2002175611A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002175611A5 JP2002175611A5 JP2001239805A JP2001239805A JP2002175611A5 JP 2002175611 A5 JP2002175611 A5 JP 2002175611A5 JP 2001239805 A JP2001239805 A JP 2001239805A JP 2001239805 A JP2001239805 A JP 2001239805A JP 2002175611 A5 JP2002175611 A5 JP 2002175611A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pillar
- soft magnetic
- magnetic layer
- permanent magnets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 description 13
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910019586 CoZrTa Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22369400P | 2000-08-08 | 2000-08-08 | |
| US09/690827 | 2000-10-18 | ||
| US09/690,827 US6563679B1 (en) | 2000-08-08 | 2000-10-18 | Current perpendicular-to-the-plane magnetoresistance read heads with transverse magnetic bias |
| US60/223694 | 2000-10-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002175611A JP2002175611A (ja) | 2002-06-21 |
| JP2002175611A5 true JP2002175611A5 (enExample) | 2004-11-25 |
| JP3708033B2 JP3708033B2 (ja) | 2005-10-19 |
Family
ID=26918039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001239805A Expired - Fee Related JP3708033B2 (ja) | 2000-08-08 | 2001-08-07 | Cpp磁気抵抗効果型再生ヘッド、cpp巨大磁気抵抗効果型再生ヘッドおよびバイアス磁界印加方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6563679B1 (enExample) |
| JP (1) | JP3708033B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237469A (ja) * | 2000-02-22 | 2001-08-31 | Fujitsu Ltd | 磁気センサ及びその製造方法 |
| US6765767B2 (en) * | 2000-11-15 | 2004-07-20 | Seagate Technology Llc | Magnetoresistive head on a side wall for increased recording densities |
| DE10128135A1 (de) * | 2001-06-09 | 2002-12-19 | Bosch Gmbh Robert | Magnetoresistive Schichtanordnung und Gradiometer mit einer derartigen Schichtanordnung |
| JP2003016613A (ja) * | 2001-06-28 | 2003-01-17 | Hitachi Ltd | 磁気ヘッド |
| JP2004335931A (ja) * | 2003-05-12 | 2004-11-25 | Alps Electric Co Ltd | Cpp型巨大磁気抵抗効果素子 |
| US7075758B2 (en) * | 2003-09-08 | 2006-07-11 | Headway Technologies, Inc. | Supplementary shield for CPP GMR read head |
| US7715154B2 (en) * | 2005-04-13 | 2010-05-11 | Seagate Technology Llc | Suppression of spin momentum transfer and related torques in magnetoresistive elements |
| US7817381B2 (en) * | 2007-05-16 | 2010-10-19 | Tdk Corporation | Thin film magnetic head which suppresses inflow of magnetic generated by bias-applying layers into a free layer from a layering direction |
| US9007727B2 (en) * | 2007-07-17 | 2015-04-14 | HGST Netherlands B.V. | Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer |
| US7916429B2 (en) * | 2007-07-30 | 2011-03-29 | Tdk Corporation | Magnetic field detecting element having thin stack with a plurality of free layers and thick bias magnetic layer |
| US8031442B2 (en) * | 2007-08-01 | 2011-10-04 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic head having CPP sensor with improved biasing for free magnetic layer |
| US8149546B2 (en) * | 2007-10-26 | 2012-04-03 | Tdk Corporation | Magnetic field detecting element including tri-layer stack with stepped portion |
| US7876534B2 (en) * | 2008-01-15 | 2011-01-25 | Tdk Corporation | Magneto-resistive effect device of the CPP type, and magnetic disk system |
| US7876535B2 (en) | 2008-01-24 | 2011-01-25 | Tdk Corporation | Magnetoresistive device of the CPP type, and magnetic disk system |
| US7881023B2 (en) * | 2008-01-24 | 2011-02-01 | Tdk Corporation | Magnetoresistive device of the CPP type, and magnetic disk system |
| US8472147B2 (en) * | 2011-05-06 | 2013-06-25 | Seagate Technology Llc | Magnetoresistive shield with lateral sub-magnets |
| US8797694B2 (en) * | 2011-12-22 | 2014-08-05 | HGST Netherlands B.V. | Magnetic sensor having hard bias structure for optimized hard bias field and hard bias coercivity |
| US20150002961A1 (en) * | 2013-06-26 | 2015-01-01 | HGST Netherlands B.V. | Scissor magnetic sensor having a back edge soft magnetic bias structure |
| JP7615659B2 (ja) * | 2020-12-22 | 2025-01-17 | 株式会社レゾナック | 磁気センサ |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54157610A (en) * | 1978-05-26 | 1979-12-12 | Sony Corp | Magnetic head |
| US4987508A (en) * | 1988-12-23 | 1991-01-22 | Eastman Kodak Company | Permanent magnet shaped to provide uniform biasing of a magnetoresistive reproduce head |
| US5428491A (en) * | 1993-12-03 | 1995-06-27 | Eastman Kodak Company | Magnetoresistive head with deposited biasing magnet |
| US5576914A (en) * | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
| EP0768642A3 (en) * | 1995-10-13 | 1998-12-16 | Read-Rite Corporation | Magnetic head with biased GMR element and sense current compensation |
| US5627704A (en) | 1996-02-12 | 1997-05-06 | Read-Rite Corporation | Thin film giant magnetoresistive CPP transducer with flux guide yoke structure |
| US5668688A (en) | 1996-05-24 | 1997-09-16 | Quantum Peripherals Colorado, Inc. | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
| US5883763A (en) * | 1997-08-19 | 1999-03-16 | Read-Rite Corporation | Read/write head having a GMR sensor biased by permanent magnets located between the GMR and the pole shields |
| US5898548A (en) * | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Shielded magnetic tunnel junction magnetoresistive read head |
| US6005753A (en) | 1998-05-29 | 1999-12-21 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias |
| US6023395A (en) * | 1998-05-29 | 2000-02-08 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing |
-
2000
- 2000-10-18 US US09/690,827 patent/US6563679B1/en not_active Expired - Lifetime
-
2001
- 2001-08-07 JP JP2001239805A patent/JP3708033B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3563375B2 (ja) | 磁気検出素子及び前記磁気検出素子を用いた薄膜磁気ヘッド | |
| JP2002175611A5 (enExample) | ||
| US7599155B2 (en) | Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path | |
| JP4658659B2 (ja) | Cpp構造の磁気抵抗効果素子およびその形成方法 | |
| JP3961497B2 (ja) | Cpp型巨大磁気抵抗効果ヘッド | |
| JP2001331913A (ja) | 磁気トンネル接合型読み取りヘッド、その製造方法および磁場検出装置 | |
| JP3708033B2 (ja) | Cpp磁気抵抗効果型再生ヘッド、cpp巨大磁気抵抗効果型再生ヘッドおよびバイアス磁界印加方法 | |
| JP5852856B2 (ja) | Cpp−mrセンサ、mrセンサ、mr再生ヘッドの製造方法 | |
| JP2002157714A (ja) | 磁気抵抗効果素子および再生ヘッド | |
| JP2002157714A5 (enExample) | ||
| JP2001014616A (ja) | 磁気変換素子、薄膜磁気ヘッドおよびそれらの製造方法 | |
| JP4371983B2 (ja) | Cpp型磁気抵抗効果素子、cpp型磁気再生ヘッド、cpp型磁気抵抗効果素子の形成方法、cpp型磁気再生ヘッドの製造方法 | |
| JP3657211B2 (ja) | 磁気ヘッド | |
| JP2007172824A (ja) | 磁気再生ヘッドおよびその製造方法 | |
| JP5128751B2 (ja) | 巨大磁気抵抗センサおよびその製造方法 | |
| JPH10177706A (ja) | スピンバルブ型薄膜素子 | |
| JP2000331316A (ja) | 磁気抵抗効果型ヘッド | |
| JP2005285936A (ja) | 磁気抵抗効果素子、磁気再生ヘッド、および磁気再生装置 | |
| JP4939050B2 (ja) | 磁気トンネル接合素子の磁化自由層の形成方法ならびにトンネル接合型再生ヘッドおよびその製造方法 | |
| US20050105222A1 (en) | Magnetoresistive head | |
| JP4614869B2 (ja) | Cip−gmr素子、cip−gmr再生ヘッド、cip−gmr再生ヘッドの製造方法、ならびにcip−gmr素子におけるフリー層の形成方法 | |
| JP2008153295A (ja) | 磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置 | |
| JPH0936455A (ja) | 磁気抵抗効果素子 | |
| JP2002015407A (ja) | 薄膜磁気ヘッドおよびその製造方法 | |
| JPH10198926A (ja) | 磁気抵抗効果型磁気ヘッド |