JP2002157714A5 - - Google Patents
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- JP2002157714A5 JP2002157714A5 JP2001239499A JP2001239499A JP2002157714A5 JP 2002157714 A5 JP2002157714 A5 JP 2002157714A5 JP 2001239499 A JP2001239499 A JP 2001239499A JP 2001239499 A JP2001239499 A JP 2001239499A JP 2002157714 A5 JP2002157714 A5 JP 2002157714A5
- Authority
- JP
- Japan
- Prior art keywords
- cobalt
- iron alloy
- spin valve
- pinned layer
- element according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 claims description 9
- 230000005291 magnetic effect Effects 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 230000005415 magnetization Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22332100P | 2000-08-07 | 2000-08-07 | |
| US09/729719 | 2000-12-06 | ||
| US09/729,719 US6680827B2 (en) | 2000-08-07 | 2000-12-06 | Dual spin valve CPP MR with flux guide between free layers thereof |
| US60/223321 | 2000-12-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002157714A JP2002157714A (ja) | 2002-05-31 |
| JP2002157714A5 true JP2002157714A5 (enExample) | 2004-11-25 |
Family
ID=26917660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001239499A Pending JP2002157714A (ja) | 2000-08-07 | 2001-08-07 | 磁気抵抗効果素子および再生ヘッド |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6680827B2 (enExample) |
| JP (1) | JP2002157714A (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3647736B2 (ja) * | 2000-09-29 | 2005-05-18 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
| US20020044391A1 (en) * | 2000-11-15 | 2002-04-18 | Masayoshi Hiramoto | Magneto-resistive element magnetic head, and magnetic recording and reproduction apparatus |
| JP3760095B2 (ja) * | 2000-12-14 | 2006-03-29 | 株式会社日立グローバルストレージテクノロジーズ | ２素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置 |
| JP3849460B2 (ja) * | 2001-05-29 | 2006-11-22 | ソニー株式会社 | 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド |
| JP2003069109A (ja) * | 2001-08-30 | 2003-03-07 | Sony Corp | 磁気抵抗効果型磁気センサ、磁気抵抗効果型磁気ヘッド、磁気再生装置と、磁気抵抗効果型磁気センサおよび磁気抵抗効果型磁気ヘッドの製造方法 |
| US7027274B1 (en) * | 2001-08-30 | 2006-04-11 | Western Digital (Fremont), Inc. | Spin-dependent tunneling read/write sensor for hard disk drives |
| US6713801B1 (en) * | 2002-07-09 | 2004-03-30 | Western Digital (Fremont), Inc. | α-tantalum lead for use with magnetic tunneling junctions |
| US6844999B2 (en) * | 2002-09-10 | 2005-01-18 | Headway Technologies, Inc. | Boron doped CoFe for GMR free layer |
| US6927948B2 (en) * | 2003-01-23 | 2005-08-09 | Hitachi Global Storage Technologies Netherlands B.V. | Differential CPP GMR sensor with free layers separated by metal gap layer |
| US7203037B2 (en) * | 2004-03-29 | 2007-04-10 | Hitachi Global Storage Technologies Netherlands, B.V. | Method and apparatus for providing a dual current-perpendicular-to-plane (CPP) GMR sensor with improved top pinning |
| JP4283169B2 (ja) * | 2004-06-16 | 2009-06-24 | 富士通株式会社 | 磁気抵抗ヘッド |
| US7242556B2 (en) * | 2004-06-21 | 2007-07-10 | Hitachi Global Storage Technologies Netherlands B.V. | CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording |
| JP2006041120A (ja) * | 2004-07-26 | 2006-02-09 | Tdk Corp | 磁気抵抗効果装置およびその製造方法、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置 |
| US7352540B1 (en) * | 2004-12-20 | 2008-04-01 | Storage Technology Corporation | Giant magneto-resistive (GMR) transducer having separation structure separating GMR sensor from head-tape interface |
| US7616411B2 (en) * | 2006-03-28 | 2009-11-10 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane (CPP) magnetoresistive sensor having a flux guide structure and synthetic free layer |
| US7961440B2 (en) * | 2007-09-27 | 2011-06-14 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane magnetoresistive sensor with reduced read gap |
| US20100110584A1 (en) * | 2008-10-30 | 2010-05-06 | Qing Dai | Dual oxide recording sublayers in perpendicular recording media |
| US8077435B1 (en) | 2008-11-20 | 2011-12-13 | Western Digital (Fremont), Llc | Current perpendicular-to-plane read sensor with back shield |
| US9190082B2 (en) * | 2013-08-28 | 2015-11-17 | Seagate Technology, Llc | Dual reader structure |
| US9190078B2 (en) | 2013-08-30 | 2015-11-17 | Seagate Technology Llc | Dual reader structure |
| US9524737B2 (en) | 2013-12-13 | 2016-12-20 | Seagate Technology Llc | Shielding and electrical contact design for devices with two or more read elements |
| US9230578B2 (en) * | 2013-12-23 | 2016-01-05 | HGST Netherlands B.V. | Multiple readers for high resolution and SNR for high areal density application |
| US9286921B1 (en) * | 2014-10-22 | 2016-03-15 | Seagate Technology Llc | Reader sensor structure having front bottom shield adjacent recessed AFM layer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275769A (ja) | 1992-03-25 | 1993-10-22 | Hitachi Maxell Ltd | 磁界センサ |
| US5287238A (en) | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
| US5896252A (en) * | 1995-08-11 | 1999-04-20 | Fujitsu Limited | Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same |
| US5627704A (en) | 1996-02-12 | 1997-05-06 | Read-Rite Corporation | Thin film giant magnetoresistive CPP transducer with flux guide yoke structure |
| JP3327375B2 (ja) * | 1996-04-26 | 2002-09-24 | 富士通株式会社 | 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置 |
| US5668688A (en) | 1996-05-24 | 1997-09-16 | Quantum Peripherals Colorado, Inc. | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
| US5768069A (en) | 1996-11-27 | 1998-06-16 | International Business Machines Corporation | Self-biased dual spin valve sensor |
| US5898547A (en) * | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide |
| US5930087A (en) * | 1997-11-20 | 1999-07-27 | Hewlett-Packard Company | Robust recording head for near-contact operation |
| US6219212B1 (en) * | 1998-09-08 | 2001-04-17 | International Business Machines Corporation | Magnetic tunnel junction head structure with insulating antiferromagnetic layer |
| US6178074B1 (en) * | 1998-11-19 | 2001-01-23 | International Business Machines Corporation | Double tunnel junction with magnetoresistance enhancement layer |
| JP3592140B2 (ja) * | 1999-07-02 | 2004-11-24 | Ｔｄｋ株式会社 | トンネル磁気抵抗効果型ヘッド |
-
2000
- 2000-12-06 US US09/729,719 patent/US6680827B2/en not_active Expired - Fee Related
-
2001
- 2001-08-07 JP JP2001239499A patent/JP2002157714A/ja active Pending
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