JP3708033B2 - Ｃｐｐ磁気抵抗効果型再生ヘッド、ｃｐｐ巨大磁気抵抗効果型再生ヘッドおよびバイアス磁界印加方法 - Google Patents

Ｃｐｐ磁気抵抗効果型再生ヘッド、ｃｐｐ巨大磁気抵抗効果型再生ヘッドおよびバイアス磁界印加方法 Download PDF

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Publication number
JP3708033B2
JP3708033B2 JP2001239805A JP2001239805A JP3708033B2 JP 3708033 B2 JP3708033 B2 JP 3708033B2 JP 2001239805 A JP2001239805 A JP 2001239805A JP 2001239805 A JP2001239805 A JP 2001239805A JP 3708033 B2 JP3708033 B2 JP 3708033B2
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Japan
Prior art keywords
magnetoresistive
cpp
head according
read head
soft magnetic
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Expired - Fee Related
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JP2001239805A
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English (en)
Japanese (ja)
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JP2002175611A (ja
JP2002175611A5 (enExample
Inventor
淑祥 李
悟 荒木
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TDK Corp
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TDK Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/934—Giant magnetoresistance, GMR

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hard Magnetic Materials (AREA)
  • Soft Magnetic Materials (AREA)
JP2001239805A 2000-08-08 2001-08-07 Ｃｐｐ磁気抵抗効果型再生ヘッド、ｃｐｐ巨大磁気抵抗効果型再生ヘッドおよびバイアス磁界印加方法 Expired - Fee Related JP3708033B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US22369400P 2000-08-08 2000-08-08
US09/690827 2000-10-18
US09/690,827 US6563679B1 (en) 2000-08-08 2000-10-18 Current perpendicular-to-the-plane magnetoresistance read heads with transverse magnetic bias
US60/223694 2000-10-18

Publications (3)

Publication Number Publication Date
JP2002175611A JP2002175611A (ja) 2002-06-21
JP2002175611A5 JP2002175611A5 (enExample) 2004-11-25
JP3708033B2 true JP3708033B2 (ja) 2005-10-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001239805A Expired - Fee Related JP3708033B2 (ja) 2000-08-08 2001-08-07 Ｃｐｐ磁気抵抗効果型再生ヘッド、ｃｐｐ巨大磁気抵抗効果型再生ヘッドおよびバイアス磁界印加方法

Country Status (2)

Country Link
US (1) US6563679B1 (enExample)
JP (1) JP3708033B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237469A (ja) * 2000-02-22 2001-08-31 Fujitsu Ltd 磁気センサ及びその製造方法
US6765767B2 (en) * 2000-11-15 2004-07-20 Seagate Technology Llc Magnetoresistive head on a side wall for increased recording densities
DE10128135A1 (de) * 2001-06-09 2002-12-19 Bosch Gmbh Robert Magnetoresistive Schichtanordnung und Gradiometer mit einer derartigen Schichtanordnung
JP2003016613A (ja) * 2001-06-28 2003-01-17 Hitachi Ltd 磁気ヘッド
JP2004335931A (ja) * 2003-05-12 2004-11-25 Alps Electric Co Ltd Ｃｐｐ型巨大磁気抵抗効果素子
US7075758B2 (en) * 2003-09-08 2006-07-11 Headway Technologies, Inc. Supplementary shield for CPP GMR read head
US7715154B2 (en) * 2005-04-13 2010-05-11 Seagate Technology Llc Suppression of spin momentum transfer and related torques in magnetoresistive elements
US7817381B2 (en) * 2007-05-16 2010-10-19 Tdk Corporation Thin film magnetic head which suppresses inflow of magnetic generated by bias-applying layers into a free layer from a layering direction
US9007727B2 (en) * 2007-07-17 2015-04-14 HGST Netherlands B.V. Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer
US7916429B2 (en) * 2007-07-30 2011-03-29 Tdk Corporation Magnetic field detecting element having thin stack with a plurality of free layers and thick bias magnetic layer
US8031442B2 (en) * 2007-08-01 2011-10-04 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having CPP sensor with improved biasing for free magnetic layer
US8149546B2 (en) * 2007-10-26 2012-04-03 Tdk Corporation Magnetic field detecting element including tri-layer stack with stepped portion
US7876534B2 (en) * 2008-01-15 2011-01-25 Tdk Corporation Magneto-resistive effect device of the CPP type, and magnetic disk system
US7876535B2 (en) 2008-01-24 2011-01-25 Tdk Corporation Magnetoresistive device of the CPP type, and magnetic disk system
US7881023B2 (en) * 2008-01-24 2011-02-01 Tdk Corporation Magnetoresistive device of the CPP type, and magnetic disk system
US8472147B2 (en) * 2011-05-06 2013-06-25 Seagate Technology Llc Magnetoresistive shield with lateral sub-magnets
US8797694B2 (en) * 2011-12-22 2014-08-05 HGST Netherlands B.V. Magnetic sensor having hard bias structure for optimized hard bias field and hard bias coercivity
US20150002961A1 (en) * 2013-06-26 2015-01-01 HGST Netherlands B.V. Scissor magnetic sensor having a back edge soft magnetic bias structure
JP7615659B2 (ja) * 2020-12-22 2025-01-17 株式会社レゾナック 磁気センサ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157610A (en) * 1978-05-26 1979-12-12 Sony Corp Magnetic head
US4987508A (en) * 1988-12-23 1991-01-22 Eastman Kodak Company Permanent magnet shaped to provide uniform biasing of a magnetoresistive reproduce head
US5428491A (en) * 1993-12-03 1995-06-27 Eastman Kodak Company Magnetoresistive head with deposited biasing magnet
US5576914A (en) * 1994-11-14 1996-11-19 Read-Rite Corporation Compact read/write head having biased GMR element
EP0768642A3 (en) * 1995-10-13 1998-12-16 Read-Rite Corporation Magnetic head with biased GMR element and sense current compensation
US5627704A (en) 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
US5668688A (en) 1996-05-24 1997-09-16 Quantum Peripherals Colorado, Inc. Current perpendicular-to-the-plane spin valve type magnetoresistive transducer
US5883763A (en) * 1997-08-19 1999-03-16 Read-Rite Corporation Read/write head having a GMR sensor biased by permanent magnets located between the GMR and the pole shields
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head
US6005753A (en) 1998-05-29 1999-12-21 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias
US6023395A (en) * 1998-05-29 2000-02-08 International Business Machines Corporation Magnetic tunnel junction magnetoresistive sensor with in-stack biasing

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JP2002175611A (ja) 2002-06-21
US6563679B1 (en) 2003-05-13

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