JP2002174645A - Method for manufacturing inspection tool - Google Patents

Method for manufacturing inspection tool

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Publication number
JP2002174645A
JP2002174645A JP2000374108A JP2000374108A JP2002174645A JP 2002174645 A JP2002174645 A JP 2002174645A JP 2000374108 A JP2000374108 A JP 2000374108A JP 2000374108 A JP2000374108 A JP 2000374108A JP 2002174645 A JP2002174645 A JP 2002174645A
Authority
JP
Japan
Prior art keywords
photosensitive layer
pattern
layer
negative photosensitive
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000374108A
Other languages
Japanese (ja)
Other versions
JP4552317B2 (en
Inventor
Tatsuhiro Okano
達弘 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2000374108A priority Critical patent/JP4552317B2/en
Publication of JP2002174645A publication Critical patent/JP2002174645A/en
Application granted granted Critical
Publication of JP4552317B2 publication Critical patent/JP4552317B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an inspection tool in which the shape of the tip of an inspection electrode formed on a wiring layer is narrower than that of the bottom of the inspection electrode. SOLUTION: A conductor layer 21 on an insulating substrate 11 is subjected to patterning treatment to form a wiring layer 21a, and a negative type resist is coated, dried and patternwise exposed to form a patternwise exposed first negative type photosensitive layer 41a, on which a patternwise exposed second negative type photosensitive layer 51a is also formed. It is then subjected to development treatment to remove the photosensitive layer in an unexposed portion to form a resist pattern 41b and a resist pattern 51b having an aperture 61. Using the wiring layer 21a as a plating electrode, the aperture 61 is subjected to an electrolytic plating to form an inspection electrode 71, and the resist pattern 41b and the resist pattern 51b are subjected to releasing treatment to obtain the inspection tool having the wiring layer 21a and the inspection electrode 71 on the insulating substrate 11.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体回路の電気
検査を行うために用いられる接触型の検査治具に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact type inspection jig used for performing an electrical inspection of a semiconductor circuit.

【0002】[0002]

【従来の技術】従来、半導体回路の検査にはプローブカ
ードと呼ばれる針状のプローブを有する配線回路基板を
使用していた。近年、シート状の検査電極を有する配線
回路基板が検査治具として使用されるようになってき
た。従来の検査治具の検査電極は、検査電極の形状が検
査電極の底部と先端とで同じような大きさか、あるいは
先端の方が太くなっている物が主流で、半導体回路の電
極がアルミの場合、アルミの酸化膜が破れずに検査時の
接触不良による検査ミスが発生していた。
2. Description of the Related Art Conventionally, a printed circuit board having a needle-shaped probe called a probe card has been used for testing a semiconductor circuit. In recent years, printed circuit boards having sheet-like inspection electrodes have been used as inspection jigs. In general, the test electrodes of conventional test jigs have the same shape at the bottom and the tip of the test electrode, or have a thicker tip, and the electrodes of the semiconductor circuit are made of aluminum. In this case, an inspection error occurred due to a poor contact at the time of inspection without breaking the aluminum oxide film.

【0003】従来の検査電極の形成方法は図3(a)〜
(e)に示すような工程で作製されている。まず、配線
層22が形成された絶縁基材12を準備し(図3(a)
参照)、絶縁基材12及び配線層22上に感光層33を
形成する(図3(b)参照)。次に、露光用マスクを使
用して感光層33を露光して、現像処理を行い、感光層
33の所定位置に開口部62を有するレジストパターン
33aを形成する(図3(c)参照)。次に、配線層2
2をめっき電極にして電解めっきを行い、配線層22上
の開口部62に検査電極72を形成する(図3(d)参
照)。次に、レジストパターン33aを剥離処理して、
絶縁基材12上に配線層22及び検査電極72を有する
検査治具を作製していた(図3(e)参照)。
A conventional method for forming an inspection electrode is shown in FIGS.
It is manufactured by a process as shown in FIG. First, the insulating base material 12 on which the wiring layer 22 is formed is prepared (FIG. 3A).
The photosensitive layer 33 is formed on the insulating base material 12 and the wiring layer 22 (see FIG. 3B). Next, the photosensitive layer 33 is exposed to light using an exposure mask and developed, thereby forming a resist pattern 33a having an opening 62 at a predetermined position of the photosensitive layer 33 (see FIG. 3C). Next, wiring layer 2
Electroplating is performed using 2 as a plating electrode to form an inspection electrode 72 in the opening 62 on the wiring layer 22 (see FIG. 3D). Next, the resist pattern 33a is peeled off,
An inspection jig having the wiring layer 22 and the inspection electrode 72 on the insulating base material 12 was produced (see FIG. 3E).

【0004】[0004]

【発明が解決しようとする課題】従来の検査治具の検査
電極は、電極の形状が電極の底部と先端とで同じような
大きさかあるいは先端の方が太くなっている物が主流で
半導体回路の電極がアルミの場合、アルミの酸化膜が破
れずに検査時の接触不良による検査ミスが発生してい
た。
The test electrodes of the conventional test jigs are generally the same in size at the bottom and the tip of the electrode or the tip is thicker at the semiconductor circuit. When the electrode was made of aluminum, an inspection error occurred due to poor contact at the time of inspection without breaking the aluminum oxide film.

【0005】本発明は上記問題点に鑑み考案されたもの
で、配線層上に形成された検査電極の先端部形状が検査
電極の底部よりも細い形状になる検査治具の製造方法を
提供することを目的とする。
The present invention has been devised in view of the above problems, and provides a method of manufacturing an inspection jig in which the tip of an inspection electrode formed on a wiring layer is narrower than the bottom of the inspection electrode. The purpose is to:

【0006】[0006]

【課題を解決するための手段】本発明に於いて上記課題
を達成するために、まず請求項1においては、以下の工
程を備えることを特徴とする検査治具の製造方法とした
ものである。 (a)絶縁基材上に導体層が形成された材料を用意する
工程。 (b)前記導体層上に感光層を形成し、パターニング処
理してレジストパターンを形成する工程。 (c)前記レジストパターンをマスクにして前記導体層
をエッチングし、前記レジストパターンを剥離して、配
線層を形成する工程。 (d)前記絶縁基材及び前記配線層上に第一ネガ型感光
層を形成し、パターン露光を行う工程。 (e)パターン露光された第一ネガ型感光層上に、第二
ネガ型感光層を形成し、パターン露光を行う工程。 (f)パターン露光された第一ネガ型感光層及びパター
ン露光された第二ネガ型感光層を現像処理し、未露光部
分の感光層を除去し、開口部を有するレジストパターン
を形成する工程。 (g)前記開口部に、電解めっきにて検査電極を形成す
る工程。 (h)前記レジストパターンを剥離して、前記絶縁基材
上に前記配線層及び前記検査電極を有する検査治具を作
製する工程。
Means for Solving the Problems In order to achieve the above object, the present invention first provides a method for manufacturing an inspection jig comprising the following steps. . (A) a step of preparing a material in which a conductor layer is formed on an insulating base material; (B) forming a photosensitive layer on the conductor layer and patterning to form a resist pattern; (C) forming a wiring layer by etching the conductor layer using the resist pattern as a mask and removing the resist pattern; (D) forming a first negative photosensitive layer on the insulating base material and the wiring layer and performing pattern exposure; (E) forming a second negative photosensitive layer on the pattern-exposed first negative photosensitive layer and performing pattern exposure; (F) a step of developing the pattern-exposed first negative photosensitive layer and the pattern-exposed second negative photosensitive layer to remove an unexposed portion of the photosensitive layer to form a resist pattern having an opening; (G) forming an inspection electrode in the opening by electrolytic plating; (H) a step of removing the resist pattern to produce an inspection jig having the wiring layer and the inspection electrode on the insulating base material.

【0007】また、請求項2においては、以下の工程を
備えることを特徴とする検査治具の製造方法としたもの
である。 (a)絶縁基材上に導体層が形成された材料を用意する
工程。 (b)前記導体層上に第一ネガ型感光層を形成し、パタ
ーン露光を行う工程。 (c)パターン露光された第一ネガ型感光層上に、第二
ネガ型感光層を形成し、パターン露光を行う工程。 (d)パターン露光された前記第一ネガ型感光層及びパ
ターン露光された第二ネガ型感光層を現像処理し、未露
光部分の感光層を除去し、開口部を有するレジストパタ
ーンを形成する工程。 (e)前記開口部に、電解めっきを行い検査電極を形成
する工程。 (f)前記レジストパターンを剥離する工程。 (g)前記絶縁基材上の前記導体層及び前記検査電極上
に感光層を形成し、パターン露光、現像等の一連のパタ
ーニング処理を行ってレジストパターンを形成する工
程。 (h)前記レジストパターンをマスクにして前記導体層
をエッチングし、レジストパターンを剥離処理して配線
層を形成し、前記絶縁基材上に前記配線層及び前記検査
電極が形成された検査治具を作製する工程。
According to a second aspect of the present invention, there is provided a method of manufacturing an inspection jig, comprising the following steps. (A) a step of preparing a material in which a conductor layer is formed on an insulating base material; (B) forming a first negative photosensitive layer on the conductor layer and performing pattern exposure; (C) forming a second negative photosensitive layer on the pattern-exposed first negative photosensitive layer and performing pattern exposure; (D) a step of developing the pattern-exposed first negative photosensitive layer and the pattern-exposed second negative photosensitive layer to remove an unexposed portion of the photosensitive layer and form a resist pattern having an opening; . (E) forming an inspection electrode by performing electrolytic plating on the opening. (F) removing the resist pattern; (G) forming a photosensitive layer on the conductor layer and the inspection electrode on the insulating base material and performing a series of patterning processes such as pattern exposure and development to form a resist pattern; (H) an inspection jig in which the conductor layer is etched using the resist pattern as a mask, the resist pattern is stripped to form a wiring layer, and the wiring layer and the inspection electrode are formed on the insulating base material The step of producing

【0008】上記の工程にて検査治具を作製することに
より、検査電極先端部の形状を任意に制御することがで
き、検査治具の配線ピッチや検査電極配置に合わせて検
査電極形状を制御することが可能となる。
By manufacturing the inspection jig in the above process, the shape of the tip of the inspection electrode can be arbitrarily controlled, and the shape of the inspection electrode can be controlled according to the wiring pitch of the inspection jig and the arrangement of the inspection electrodes. It is possible to do.

【0009】[0009]

【発明の実施の形態】以下本発明の実施の形態につき説
明する。図1(a)〜(h)に本発明の検査治具の製造
方法の一実施例を工程順に示す模式構成断面図を、図2
(a)〜(h)に本発明の検査治具の製造方法の他の実
施例を工程順に示す模式構成断面図をそれぞれ示す。本
発明の検査治具の製造方法の一実施例について説明す
る。まず、絶縁基材11上に導体層21が形成された材
料を用意する(図1(a)参照)。ここで、絶縁基材1
1はポリイミドフィルム等が、導体層21には銅箔が用
いられる。次に、導体層上に感光層を形成し、パターン
ニング処理してレジストパターン31を形成する(図1
(b)参照)。次に、レジストパターン31をマスクに
して導体層21をエッチングして、配線層21aを形成
する(図1(c)参照)。
Embodiments of the present invention will be described below. 1 (a) to 1 (h) are schematic sectional views showing one embodiment of a method for manufacturing an inspection jig according to the present invention in the order of steps.
(A) to (h) are schematic sectional views showing another embodiment of the method of manufacturing an inspection jig according to the present invention in the order of steps. An embodiment of the method for manufacturing an inspection jig according to the present invention will be described. First, a material in which the conductor layer 21 is formed on the insulating base material 11 is prepared (see FIG. 1A). Here, the insulating substrate 1
1 is a polyimide film or the like, and the conductor layer 21 is a copper foil. Next, a photosensitive layer is formed on the conductor layer and patterned to form a resist pattern 31 (FIG. 1).
(B)). Next, the conductor layer 21 is etched using the resist pattern 31 as a mask to form a wiring layer 21a (see FIG. 1C).

【0010】次に、絶縁基材11及び配線層21a上に
ネガ型のレジストを塗布、乾燥して第一ネガ型感光層4
1を形成し、露光用マスクを用いて、第一ネガ型感光層
41に露光を行い、パターン露光された第一ネガ型感光
層41aを形成する(図1(d)参照)。ここで、第一
ネガ型感光層41はネガ型であれば、液状のレジストを
塗布したもの、ドライフィルムをラミネートしたもの、
いずれでもよい。この第一ネガ型感光層41のパターン
露光によって検査電極の下部の形状が決定される。この
ため、後工程の現像条件にもよるが、第一ネガ型感光層
41のパターン幅、露光条件はあらかじめ開口部の形状
を把握した上で設定される。
Next, a negative resist is applied on the insulating base material 11 and the wiring layer 21a, and dried to form the first negative photosensitive layer 4.
1 is formed and the first negative photosensitive layer 41 is exposed by using an exposure mask to form a pattern-exposed first negative photosensitive layer 41a (see FIG. 1D). Here, if the first negative type photosensitive layer 41 is a negative type, one coated with a liquid resist, one laminated with a dry film,
Either may be used. The shape of the lower portion of the inspection electrode is determined by the pattern exposure of the first negative photosensitive layer 41. For this reason, the pattern width and the exposure condition of the first negative photosensitive layer 41 are set after grasping the shape of the opening in advance, depending on the development conditions in the post-process.

【0011】次に、パターン露光された第一ネガ型感光
層41a上にネガ型のレジストを塗布、乾燥して第二ネ
ガ型感光層51を形成し、露光用マスクを用いて、第二
ネガ型感光層51に露光を行い、パターン露光された第
二ネガ型感光層51aを形成する(図1(e)参照)。
ここで、第二ネガ型感光層51は第一ネガ型感光層41
同様に、ネガ型であれば、液状のレジストを塗布したも
の、ドライフィルムをラミネートしたもの、いずれでも
よい。このパターン露光された第二ネガ型感光層51a
によって検査電極の上部の形状が決定される。このた
め、後工程の現像条件にもよるが、第二ネガ型感光層5
1のパターン幅、露光条件はあらかじめ開口部の形状を
把握した上で設定される。
Next, a negative resist is applied to the pattern-exposed first negative photosensitive layer 41a and dried to form a second negative photosensitive layer 51, and the second negative photosensitive layer 51 is formed using an exposure mask. The mold photosensitive layer 51 is exposed to form a pattern-exposed second negative photosensitive layer 51a (see FIG. 1E).
Here, the second negative photosensitive layer 51 is the first negative photosensitive layer 41.
Similarly, if it is a negative type, it may be one coated with a liquid resist or one laminated with a dry film. The pattern-exposed second negative photosensitive layer 51a
This determines the shape of the upper part of the inspection electrode. For this reason, the second negative photosensitive layer 5 depends on the developing conditions in the subsequent steps.
The pattern width and exposure conditions of 1 are set after grasping the shape of the opening in advance.

【0012】次に、パターン露光された第一ネガ型感光
層41a及び第二ネガ型感光層51aを現像処理し、未
露光部分の感光層を除去し、開口部61を有するレジス
トパターン41b及びレジストパターン51bを形成す
る(図1(f)参照)。ここで、パターン露光された第
一ネガ型感光層41a及び第二ネガ型感光層51aの現
像条件では現像を強めに、即ちオーバー現像を行うと、
あらかじめ第一ネガ型感光層41と第二ネガ型感光層5
1のパターン幅と露光条件が設定されているため、パタ
ーン露光された第一ネガ型感光層41aと第二ネガ型感
光層51aとの境界での段差を小さくすることができ、
第一ネガ型感光層の開口部形状を逆テーパー状にするこ
とができる。
Next, the pattern-exposed first negative photosensitive layer 41a and second negative photosensitive layer 51a are developed to remove the unexposed portions of the photosensitive layer, and a resist pattern 41b having an opening 61 and a resist pattern 41b. The pattern 51b is formed (see FIG. 1F). Here, under the developing conditions of the pattern-exposed first negative photosensitive layer 41a and the second negative photosensitive layer 51a, if the development is strengthened, that is, if over development is performed,
First, the first negative photosensitive layer 41 and the second negative photosensitive layer 5
Since the pattern width and the exposure condition of 1 are set, the step at the boundary between the pattern-exposed first negative photosensitive layer 41a and the second negative photosensitive layer 51a can be reduced,
The shape of the opening of the first negative photosensitive layer can be reverse tapered.

【0013】次に、配線層21aをめっき電極にして、
開口部61に電解めっきを行い、検査電極71を形成す
る(図1(g)参照)。ここで、検査電極71の材質と
しては、銅、ニッケル等が使用される。好ましい例とし
ては、銅めっきで検査電極を形成した後に、ニッケルを
下地めっきにして、金やパラジウム等のめっきを行うこ
とがあげられる。この場合、検査電極の先端部、即ち被
検査体に接触する側が、金めっきとなり、接触の信頼性
が高まる。
Next, the wiring layer 21a is used as a plating electrode,
The opening 61 is subjected to electrolytic plating to form an inspection electrode 71 (see FIG. 1 (g)). Here, as a material of the inspection electrode 71, copper, nickel, or the like is used. As a preferred example, after forming an inspection electrode by copper plating, plating of gold, palladium, or the like is performed using nickel as a base plating. In this case, the tip portion of the inspection electrode, that is, the side that comes into contact with the object to be inspected is plated with gold, and the reliability of the contact is increased.

【0014】次に、レジストパターン41b及びレジス
トパターン51bを剥離処理して、絶縁基材11上に配
線層21a及び検査電極71を有する検査治具を得るこ
とができる(図1(h)参照)。上記の工程によって検
査電極の先端形状が検査電極底部よりも細い電極を形成
することができる。
Next, the resist pattern 41b and the resist pattern 51b are peeled off to obtain an inspection jig having the wiring layer 21a and the inspection electrode 71 on the insulating base material 11 (see FIG. 1 (h)). . According to the above-described process, an electrode in which the tip of the inspection electrode is thinner than the bottom of the inspection electrode can be formed.

【0015】本発明の検査治具の製造方法の他の実施例
について説明する。この製造方法は、導体層21が形成
された絶縁基材上11にパターン露光された第一ネガ型
感光層42aと第二ネガ型感光層52aを形成し、現像
処理して開口部61を形成し、電解めっきにて検査電極
71を形成した後、導体層21をパターニング処理し
て、絶縁基材11上に配線層21a及び検査電極71を
形成する方法で、材料、条件は上記の実施の形態と同じ
なので説明は省略する。
Another embodiment of the method for manufacturing an inspection jig according to the present invention will be described. In this manufacturing method, the first negative photosensitive layer 42a and the second negative photosensitive layer 52a, which are pattern-exposed, are formed on the insulating substrate 11 on which the conductor layer 21 is formed, and the openings 61 are formed by developing. Then, after forming the inspection electrode 71 by electrolytic plating, the conductor layer 21 is patterned to form the wiring layer 21 a and the inspection electrode 71 on the insulating base material 11. The description is omitted because it is the same as the embodiment.

【0016】以下実施例により本発明を詳細に説明す
る。 <実施例1>まず、厚さ25μm厚のポリイミドフィル
ムからなる絶縁基材11に、12μm厚の銅箔を貼着
し、導体層21を形成した。次に、フォトリソグラフィ
とエッチング工法によって導体層21をパターニング処
理して配線層21aを形成した。
Hereinafter, the present invention will be described in detail with reference to examples. <Example 1> First, a 12 µm-thick copper foil was adhered to an insulating base material 11 made of a 25 µm-thick polyimide film to form a conductor layer 21. Next, the conductor layer 21 was patterned by photolithography and etching to form a wiring layer 21a.

【0017】次に、絶縁基材11及び配線層21a上に
20μm厚のドライフィルムレジストをラミネートし
て、第一ネガ型感光層41を形成し、さらに、40μm
径の丸パターンを有する露光マスクを用いて、50mJ
/cm2の露光量で露光し、パターン露光された第一ネ
ガ型感光層41aを形成した。
Next, a dry film resist having a thickness of 20 μm is laminated on the insulating base material 11 and the wiring layer 21 a to form a first negative photosensitive layer 41.
50 mJ using an exposure mask having a circular pattern of diameters
/ Cm 2 to form a pattern-exposed first negative photosensitive layer 41a.

【0018】次に、パターン露光された第一ネガ型感光
層41a上に10μm厚のドライフィルムレジストをラ
ミネートして、第二ネガ型感光層51を形成し、さら
に、10μm径の丸パターンを有する露光マスクを用い
て、30mJ/cm2の露光量で露光し、パターン露光
された第二ネガ型感光層51aを形成した。
Next, a 10 μm-thick dry film resist is laminated on the pattern-exposed first negative photosensitive layer 41 a to form a second negative photosensitive layer 51, which has a circular pattern having a diameter of 10 μm. Exposure was performed at an exposure amount of 30 mJ / cm 2 using an exposure mask to form a pattern-exposed second negative photosensitive layer 51a.

【0019】次に、パターン露光された第一ネガ型感光
層41a及びパターン露光された第二ネガ型感光層51
aを濃度1%の炭酸ソーダ溶液で現像処理し、未露光部
の感光層を除去し、開口部61を有するレジストパター
ン41b及びレジストパターン51bを形成した。
Next, the pattern-exposed first negative photosensitive layer 41a and the pattern-exposed second negative photosensitive layer 51
a was developed with a sodium carbonate solution having a concentration of 1%, and the unexposed portions of the photosensitive layer were removed to form resist patterns 41b and 51b having openings 61.

【0020】次に、配線層21aをめっき電極にして、
開口部61に電解ニッケルめっきを行い、検査電極71
を形成した。次に、レジストパターン41b及びレジス
トパターン51bを10%の水酸化ナトリウム溶液によ
って剥離処理し、絶縁基材11上に配線層21a及び先
端部が細くなった検査電極71を有する検査治具を得
た。
Next, using the wiring layer 21a as a plating electrode,
The opening 61 is subjected to electrolytic nickel plating, and the inspection electrode 71 is
Was formed. Next, the resist pattern 41b and the resist pattern 51b were stripped with a 10% sodium hydroxide solution to obtain an inspection jig having the wiring layer 21a and the inspection electrode 71 having a narrowed tip on the insulating base material 11. .

【0021】<実施例2>まず、厚さ25μm厚のポリ
イミドフィルムからなる絶縁基材11に、12μm厚の
銅箔を貼着し、導体層21を形成した。
Example 2 First, a copper layer having a thickness of 12 μm was adhered to an insulating substrate 11 made of a polyimide film having a thickness of 25 μm to form a conductor layer 21.

【0022】次に、導体層21上に20μm厚のドライ
フィルムレジストをラミネートして、第一ネガ型感光層
42を形成し、さらに、40μm径の丸パターンを有す
る露光マスクを用いて、50mJ/cm2の露光量で露
光し、パターン露光された第一ネガ型感光層42aを形
成した。
Next, a dry film resist having a thickness of 20 μm is laminated on the conductor layer 21 to form a first negative photosensitive layer 42. Exposure was performed at an exposure amount of cm 2 to form a pattern-exposed first negative photosensitive layer 42a.

【0023】次に、パターン露光された第一ネガ型感光
層42a上に10μm厚のドライフィルムレジストをラ
ミネートして、第二ネガ型感光層52を形成し、さら
に、10μm径の丸パターンを有する露光マスクを用い
て、30mJ/cm2の露光量で露光し、パターン露光
された第二ネガ型感光層52aを形成した。
Next, a dry film resist having a thickness of 10 μm is laminated on the pattern-exposed first negative photosensitive layer 42 a to form a second negative photosensitive layer 52, and further has a circular pattern having a diameter of 10 μm. Using a light exposure mask, exposure was performed at an exposure amount of 30 mJ / cm 2 to form a pattern-exposed second negative photosensitive layer 52a.

【0024】次に、パターン露光された第一ネガ型感光
層42a及びパターン露光された第二ネガ型感光層52
aを濃度1%の炭酸ソーダ溶液で現像処理し、未露光部
の感光層を除去し、開口部61を有するレジストパター
ン42b及びレジストパターン52bを形成した。
Next, the pattern-exposed first negative photosensitive layer 42a and the pattern-exposed second negative photosensitive layer 52
a was developed with a sodium carbonate solution having a concentration of 1%, and the unexposed portions of the photosensitive layer were removed to form resist patterns 42b and 52b having openings 61.

【0025】次に、導体層21をめっき電極にして、開
口部61に電解ニッケルめっきを行い、検査電極71を
形成した。
Next, using the conductive layer 21 as a plating electrode, the opening 61 was subjected to electrolytic nickel plating to form an inspection electrode 71.

【0026】次に、レジストパターン42b及びレジス
トパターン52bを10%の水酸化ナトリウム溶液によ
って剥離処理し、絶縁基材11上に先端部が細くなった
検査電極71を形成した。
Next, the resist pattern 42b and the resist pattern 52b were peeled off with a 10% sodium hydroxide solution to form an inspection electrode 71 having a thin tip on the insulating base material 11.

【0027】次に、導体層21及び検査電極71の所定
位置にレジストパターン32を形成し、レジストパター
ン32をマスクにして導体層21をエッチングして、絶
縁基材11上に配線層21a及び先端部が細くなった検
査電極71を有する検査治具を得た。
Next, a resist pattern 32 is formed at predetermined positions of the conductor layer 21 and the inspection electrode 71, and the conductor layer 21 is etched using the resist pattern 32 as a mask. An inspection jig having an inspection electrode 71 having a thinned portion was obtained.

【0028】[0028]

【発明の効果】本発明の検査治具の製造方法を適用する
ことで、検査電極先端部の形状を任意に制御することが
でき、検査電極先端部を20μm以下の細い径にするこ
とで半導体回路の電極がアルミの場合でも良好な接触が
維持でき、信頼性の高い検査が可能な検査治具を製造す
ることが可能となる。
By applying the method for manufacturing an inspection jig according to the present invention, the shape of the tip of the inspection electrode can be arbitrarily controlled, and the tip of the inspection electrode can be formed to have a small diameter of 20 μm or less. Even if the electrodes of the circuit are made of aluminum, good contact can be maintained, and an inspection jig capable of highly reliable inspection can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)〜(h)は、本発明の検査治具の製造方
法の一実施例を工程順に示す模式構成断面図である。
1 (a) to 1 (h) are schematic sectional views showing one embodiment of a method for manufacturing an inspection jig according to the present invention in the order of steps.

【図2】(a)〜(h)は、本発明の検査治具の製造方
法の他の実施例を工程順に示す模式構成断面図である。
2A to 2H are schematic sectional views showing another embodiment of the method of manufacturing the inspection jig according to the present invention in the order of steps.

【図3】(a)〜(e)は、従来の検査治具の製造方法
の一例を工程順に示す模式構成断面図である。
FIGS. 3A to 3E are schematic sectional views showing an example of a conventional method for manufacturing an inspection jig in the order of steps.

【符号の説明】[Explanation of symbols]

11、12……絶縁基材 21……導体層 21a、22……配線層 31、32……レジストパターン 33……感光層 33a……レジストパターン 41、42……第一ネガ型感光層 41a、42a……パターン露光された第一ネガ型感光
層 41b、42b……レジストパターン 51、52……第二ネガ型感光層 51a、52a……パターン露光された第二ネガ型感光
層 51b、52b……レジストパターン 61、62……開口部 71、72……検査電極
11, 12 insulating base material 21 conductor layer 21a, 22 wiring layer 31, 32 resist pattern 33 photosensitive layer 33a resist pattern 41, 42 first negative photosensitive layer 41a 42a: pattern-exposed first negative photosensitive layer 41b, 42b ... resist pattern 51, 52 ... second negative photosensitive layer 51a, 52a ... pattern-exposed second negative photosensitive layer 51b, 52b ... ... Resist patterns 61,62 ... Openings 71,72 ... Inspection electrodes

フロントページの続き Fターム(参考) 2G011 AA16 AA21 AB06 AC14 AE03 AF06 4M106 AA08 AC01 BA01 CA01 DD04 DD10 5E339 AB02 BC02 BD06 BD08 BD11 BE11 CC01 CC02 CE11 CE12 CE16 CE19 CF02 CF15 CG04 DD02 5E343 AA03 AA12 AA18 AA33 BB01 BB09 BB16 BB24 BB67 BB71 CC62 DD43 FF30 GG06 GG08Continued on front page F term (reference) 2G011 AA16 AA21 AB06 AC14 AE03 AF06 4M106 AA08 AC01 BA01 CA01 DD04 DD10 5E339 AB02 BC02 BD06 BD08 BD11 BE11 CC01 CC02 CE11 CE12 CE16 CE19 CF02 CF15 CG04 DD02 5E343 AA03 AA16 BB33 BB33 BB71 CC62 DD43 FF30 GG06 GG08

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】以下の工程を備えることを特徴とする検査
治具の製造方法。 (a)絶縁基材上に導体層が形成された材料を用意する
工程。 (b)前記導体層上に感光層を形成し、パターニング処
理してレジストパターンを形成する工程。 (c)前記レジストパターンをマスクにして前記導体層
をエッチングし、前記レジストパターンを剥離して、配
線層を形成する工程。 (d)前記絶縁基材及び前記配線層上に第一ネガ型感光
層を形成し、パターン露光を行う工程。 (e)パターン露光された第一ネガ型感光層上に、第二
ネガ型感光層を形成し、パターン露光を行う工程。 (f)パターン露光された第一ネガ型感光層及びパター
ン露光された第二ネガ型感光層を現像処理し、未露光部
分の感光層を除去し、開口部を有するレジストパターン
を形成する工程。 (g)前記開口部に、電解めっきにて検査電極を形成す
る工程。 (h)前記レジストパターンを剥離して、前記絶縁基材
上に前記配線層及び前記検査電極を有する検査治具を作
製する工程。
1. A method for manufacturing an inspection jig, comprising the following steps. (A) a step of preparing a material in which a conductor layer is formed on an insulating base material; (B) forming a photosensitive layer on the conductor layer and patterning to form a resist pattern; (C) forming a wiring layer by etching the conductor layer using the resist pattern as a mask and removing the resist pattern; (D) forming a first negative photosensitive layer on the insulating base material and the wiring layer and performing pattern exposure; (E) forming a second negative photosensitive layer on the pattern-exposed first negative photosensitive layer and performing pattern exposure; (F) a step of developing the pattern-exposed first negative photosensitive layer and the pattern-exposed second negative photosensitive layer to remove an unexposed portion of the photosensitive layer to form a resist pattern having an opening; (G) forming an inspection electrode in the opening by electrolytic plating; (H) a step of removing the resist pattern to produce an inspection jig having the wiring layer and the inspection electrode on the insulating base material.
【請求項2】以下の工程を備えることを特徴とする検査
治具の製造方法。 (a)絶縁基材上に導体層が形成された材料を用意する
工程。 (b)前記導体層上に第一ネガ型感光層を形成し、パタ
ーン露光を行う工程。 (c)パターン露光された第一ネガ型感光層上に、第二
ネガ型感光層を形成し、パターン露光を行う工程。 (d)パターン露光された前記第一ネガ型感光層及びパ
ターン露光された第二ネガ型感光層を現像処理し、未露
光部分の感光層を除去し、開口部を有するレジストパタ
ーンを形成する工程。 (e)前記開口部に、電解めっきを行い電極を形成する
工程。 (f)前記レジストパターンを剥離する工程。 (g)前記絶縁基材上の前記導体層及び前記電極上に感
光層を形成し、パターン露光、現像等の一連のパターニ
ング処理を行ってレジストパターンを形成する工程。 (h)前記レジストパターンをマスクにして前記導体層
をエッチングし、レジストパターンを剥離処理して配線
層を形成し、前記絶縁基材上に前記配線層及び前記電極
が形成された検査治具を作製する工程。
2. A method for manufacturing an inspection jig, comprising the following steps. (A) a step of preparing a material in which a conductor layer is formed on an insulating base material; (B) forming a first negative photosensitive layer on the conductor layer and performing pattern exposure; (C) forming a second negative photosensitive layer on the pattern-exposed first negative photosensitive layer and performing pattern exposure; (D) a step of developing the pattern-exposed first negative photosensitive layer and the pattern-exposed second negative photosensitive layer to remove an unexposed portion of the photosensitive layer and form a resist pattern having an opening; . (E) forming an electrode by performing electrolytic plating on the opening. (F) removing the resist pattern; (G) forming a photosensitive layer on the conductive layer and the electrode on the insulating base material and performing a series of patterning processes such as pattern exposure and development to form a resist pattern; (H) etching the conductor layer using the resist pattern as a mask, removing the resist pattern to form a wiring layer, and forming an inspection jig on which the wiring layer and the electrodes are formed on the insulating base material; The process of making.
JP2000374108A 2000-12-08 2000-12-08 Manufacturing method of inspection jig Expired - Fee Related JP4552317B2 (en)

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Application Number Priority Date Filing Date Title
JP2000374108A JP4552317B2 (en) 2000-12-08 2000-12-08 Manufacturing method of inspection jig

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JP2002174645A true JP2002174645A (en) 2002-06-21
JP4552317B2 JP4552317B2 (en) 2010-09-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977207B1 (en) 2008-09-03 2010-08-20 윌테크놀러지(주) Method for manufacturing probe and probe card

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210846A (en) * 1989-02-10 1990-08-22 Hitachi Ltd Manufacture of probe head for semiconductor lsi inspecting device and the inspecting device
JPH10123176A (en) * 1996-10-22 1998-05-15 Hitachi Cable Ltd Probe substrate for inspecting bare chip and bare chip inspection system
JPH1164389A (en) * 1997-08-26 1999-03-05 Tokyo Electron Ltd Bump type contactor and production of contact therefor
JP2000180471A (en) * 1998-12-11 2000-06-30 Hitachi Cable Ltd Probe substrate for inspecting bare chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210846A (en) * 1989-02-10 1990-08-22 Hitachi Ltd Manufacture of probe head for semiconductor lsi inspecting device and the inspecting device
JPH10123176A (en) * 1996-10-22 1998-05-15 Hitachi Cable Ltd Probe substrate for inspecting bare chip and bare chip inspection system
JPH1164389A (en) * 1997-08-26 1999-03-05 Tokyo Electron Ltd Bump type contactor and production of contact therefor
JP2000180471A (en) * 1998-12-11 2000-06-30 Hitachi Cable Ltd Probe substrate for inspecting bare chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977207B1 (en) 2008-09-03 2010-08-20 윌테크놀러지(주) Method for manufacturing probe and probe card

Also Published As

Publication number Publication date
JP4552317B2 (en) 2010-09-29

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