JP2002158156A - 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法 - Google Patents

電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法

Info

Publication number
JP2002158156A
JP2002158156A JP2000351055A JP2000351055A JP2002158156A JP 2002158156 A JP2002158156 A JP 2002158156A JP 2000351055 A JP2000351055 A JP 2000351055A JP 2000351055 A JP2000351055 A JP 2000351055A JP 2002158156 A JP2002158156 A JP 2002158156A
Authority
JP
Japan
Prior art keywords
electron beam
correction value
electron
electron beams
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000351055A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Haraguchi
岳士 原口
Hiroshi Yasuda
洋 安田
Shinichi Hamaguchi
新一 濱口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Priority to JP2000351055A priority Critical patent/JP2002158156A/ja
Priority to PCT/JP2001/009812 priority patent/WO2002041372A1/fr
Priority to TW090128180A priority patent/TWI230838B/zh
Publication of JP2002158156A publication Critical patent/JP2002158156A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2000351055A 2000-11-17 2000-11-17 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法 Withdrawn JP2002158156A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000351055A JP2002158156A (ja) 2000-11-17 2000-11-17 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法
PCT/JP2001/009812 WO2002041372A1 (fr) 2000-11-17 2001-11-09 Systeme d'exposition a un faisceau electronique, procede d'exposition a un faisceau electronique et procede de production d'elements semi-conducteurs
TW090128180A TWI230838B (en) 2000-11-17 2001-11-14 Electron beam exposure device and method and manufacturing method of semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000351055A JP2002158156A (ja) 2000-11-17 2000-11-17 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法

Publications (1)

Publication Number Publication Date
JP2002158156A true JP2002158156A (ja) 2002-05-31

Family

ID=18824174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000351055A Withdrawn JP2002158156A (ja) 2000-11-17 2000-11-17 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法

Country Status (3)

Country Link
JP (1) JP2002158156A (fr)
TW (1) TWI230838B (fr)
WO (1) WO2002041372A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017159693A1 (fr) * 2016-03-14 2017-09-21 株式会社ニコン Dispositif d'exposition, procédé d'exposition, procédé de lithographie et procédé de fabrication de dispositif
WO2018167936A1 (fr) * 2017-03-17 2018-09-20 株式会社ニコン Dispositif d'exposition, procédé lithographique, et procédé de fabrication de dispositif
WO2018167922A1 (fr) * 2017-03-16 2018-09-20 株式会社ニコン Appareil optique à faisceau de particules chargées, appareil d'exposition, procédé d'exposition, appareil de commande, procédé de commande, appareil de génération d'informations, et procédé de fabrication de dispositif

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101414126B (zh) 2002-10-30 2012-02-15 迈普尔平版印刷Ip有限公司 电子束曝光系统
JP4520426B2 (ja) 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
DE69223088T2 (de) * 1991-06-10 1998-03-05 Fujitsu Ltd Apparat zur Musterüberprüfung und Elektronenstrahlgerät
JP3298347B2 (ja) * 1995-01-11 2002-07-02 株式会社日立製作所 電子線描画装置
US6107636A (en) * 1997-02-07 2000-08-22 Canon Kabushiki Kaisha Electron beam exposure apparatus and its control method
JP3976835B2 (ja) * 1997-05-08 2007-09-19 キヤノン株式会社 電子ビーム露光方法及び電子ビーム露光装置
JPH11233418A (ja) * 1998-02-18 1999-08-27 Jeol Ltd 電子ビーム描画装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017159693A1 (fr) * 2016-03-14 2017-09-21 株式会社ニコン Dispositif d'exposition, procédé d'exposition, procédé de lithographie et procédé de fabrication de dispositif
JPWO2017159693A1 (ja) * 2016-03-14 2019-01-10 株式会社ニコン 露光装置及び露光方法、リソグラフィ方法、並びにデバイス製造方法
WO2018167922A1 (fr) * 2017-03-16 2018-09-20 株式会社ニコン Appareil optique à faisceau de particules chargées, appareil d'exposition, procédé d'exposition, appareil de commande, procédé de commande, appareil de génération d'informations, et procédé de fabrication de dispositif
US10984982B2 (en) 2017-03-16 2021-04-20 Nikon Corporation Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method and device manufacturing method
US11387074B2 (en) 2017-03-16 2022-07-12 Nikon Corporation Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method and device manufacturing method
WO2018167936A1 (fr) * 2017-03-17 2018-09-20 株式会社ニコン Dispositif d'exposition, procédé lithographique, et procédé de fabrication de dispositif

Also Published As

Publication number Publication date
TWI230838B (en) 2005-04-11
WO2002041372A1 (fr) 2002-05-23

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Legal Events

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A300 Application deemed to be withdrawn because no request for examination was validly filed

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Effective date: 20080205