WO2002063662A1 - Procede de fabrication d'une fente, fente, et systeme d'exposition de faisceau a electrons - Google Patents

Procede de fabrication d'une fente, fente, et systeme d'exposition de faisceau a electrons Download PDF

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Publication number
WO2002063662A1
WO2002063662A1 PCT/JP2002/001068 JP0201068W WO02063662A1 WO 2002063662 A1 WO2002063662 A1 WO 2002063662A1 JP 0201068 W JP0201068 W JP 0201068W WO 02063662 A1 WO02063662 A1 WO 02063662A1
Authority
WO
WIPO (PCT)
Prior art keywords
slit
groove
substrate
electron beam
hole
Prior art date
Application number
PCT/JP2002/001068
Other languages
English (en)
Japanese (ja)
Inventor
Harunobu Muto
Hiroshi Yano
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2002063662A1 publication Critical patent/WO2002063662A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Definitions

  • the present invention relates to a method for manufacturing a slit for forming an electron beam into a desired shape, a slit, and an electron beam exposure apparatus.
  • the present invention relates to a slit manufacturing method capable of accurately forming a slit opening.
  • a slit for forming an electron beam into a desired shape has been mechanically manufactured using precision machining technology.
  • a slit is formed by mechanically manufacturing a plate-shaped member and combining a plurality of manufactured plate-shaped members.
  • a slit is formed by two plate-shaped members provided in parallel and two plate-shaped members provided perpendicular to the two plate-shaped members.
  • an object of the present invention is to provide a slit manufacturing method, a slit, and an electron beam exposure apparatus that can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims.
  • the dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
  • a slit manufacturing method for manufacturing a slit for forming an electron beam into a desired shape, the method comprising a step of forming a groove on a surface of a substrate.
  • the groove forming step includes forming a plurality of grooves on the surface of the substrate, and the through-hole forming step includes forming a plurality of grooves on the bottom surface of the plurality of grooves from the back surface of the substrate.
  • a plurality of through holes smaller than the size may be formed by anisotropic jet etching.
  • the method further includes a conductive film forming step of depositing a conductive film on the surface of the semiconductor substrate, and forming a through hole having an opening at substantially the same position as the groove from the conductive film surface on the conductive film. May be.
  • the method may further include a step of inserting a mask member having a cross section having a size substantially the same as the size of the groove, a step of depositing a conductive film, and a step of removing the mask member.
  • the mask member may be a rod-shaped member having substantially the same shape as the through hole to be formed in the conductive film.
  • the mask member may be a fiber material.
  • a through hole having a substantially quadrangular pyramid shape may be formed in the substrate.
  • the method may further include a coating step of forming a conductive film such as a platinum film on the front surface of the through hole and the back surface of the substrate.
  • a slit for forming an electron beam into a desired shape is used.
  • a slit is provided.
  • the slit has a plurality of grooves formed on a surface of the substrate, and a size of each opening reaching the bottom of the plurality of grooves from the back surface of the substrate, respectively.
  • the conductive film further includes a conductive film formed on the surface of the substrate, the conductive film has a through hole reaching the groove from the surface of the conductive film, and the through hole has a cross section substantially the same size as the groove. May have.
  • the through hole may have a quadrangular pyramid shape.
  • a conductive film such as a platinum film formed on the front surface of the through hole and the back surface of the substrate may be further provided.
  • an electron beam exposure apparatus for exposing a wafer with an electron beam, comprising: an electron gun for generating an electron beam; a slit for forming the electron beam into a desired shape; A deflector for deflecting the wafer to a desired position; and a stage for mounting the wafer.
  • the slit includes a substrate, a groove formed on the surface of the substrate, and a bottom surface of the groove from the back surface of the substrate. The size of the opening at the bottom of the groove is smaller than the size of the bottom of the groove, and an electron beam exposure apparatus is provided.
  • the electron gun generates a plurality of electron beams, the slit shapes each of the plurality of electron beams into a desired shape, and the slit forms the plurality of electron beams on a surface of the substrate. And a plurality of through holes that reach from the surface of the substrate to the respective bottom surfaces of the plurality of groove portions, and the size of each opening in the bottom surface of the groove portion is smaller than the size of the bottom surface of the groove portion.
  • FIG. 1 is an example of a configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. Is shown.
  • FIG. 2 shows an example of the structure of the slit 200 used as the first molded member 14 and the second molded member 22.
  • FIG. 3 shows an example of a method for manufacturing the slit 200.
  • FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • the electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 by an electron beam, and a control system 140 that controls the operation of each component included in the exposure unit 150. Prepare.
  • the exposure unit 150 generates electron beams inside the housing 8, and forms electron beam shaping means 110 for shaping the cross-sectional shape of the electron beam into a desired shape, and forms a plurality of electron beams on the wafer.
  • Irradiation switching means 1 1 2 for independently switching whether or not to irradiate the electron beam for each electron beam; and ⁇ adjusting the direction and size of the image of the pattern to be transferred to 4 4 ⁇ And an electron optical system including:
  • the exposure unit 150 includes a stage system including a stage 46 for mounting a wafer 44 on which a pattern is to be exposed, and a wafer stage drive unit 48 for driving the wafer stage 46.
  • the electron beam shaping means 110 includes an electron gun 10 for generating a plurality of electron beams, and a member having a plurality of penetrating portions for shaping the cross-sectional shape of the electron beam into a desired shape by passing the electron beam.
  • a first molded member 14 and a second molded member 22 a first multi-axis electron lens 16 for independently converging a plurality of electron beams and adjusting a focus of the electron beam, and a first molded member 14
  • a first shaping deflecting section 18 and a second shaping deflecting section 20 for independently deflecting a plurality of electron beams that have passed through.
  • the first molding member 14 and the second molding member 22 include a substrate and a composite formed on the surface of the substrate.
  • a plurality of grooves and a plurality of through holes extending from the back surface of the front surface of the substrate to the bottom surface of the groove, and having a size of an opening in the bottom surface of the groove smaller than the size of the bottom surface of the groove. It is.
  • the plurality of electron beams generated by the electron gun 10 respectively pass through the plurality of through holes.
  • the first molding member 14 and the second molding member 22 may have a grounded metal film of platinum or the like on the surface irradiated with the electron beam.
  • the material forming the first molded member 14 and the second molded member 22 and / or the metal film is preferably a non-magnetic metal material having a high melting point. Further, the metal film is preferably a metal material that is hardly oxidized.
  • the cross-sectional shape of the plurality of through-holes included in the first molded member 14 and the second molded member 22 may have a spread along the irradiation direction of the electron beam in order to efficiently pass the electron beam. .
  • the irradiation switching means 1 1 and 2 independently converge a plurality of electron beams and adjust the focus of the electron beam.
  • the blanking electrode array 26 includes a blanking electrode array 26 that includes a plurality of openings through which the electron beam passes, and a blanking electrode array 26 that independently switches whether or not the electron beam irradiates the wafer 44 for each electron beam.
  • An electron beam shielding member 28 for shielding the deflected electron beam.
  • the cross-sectional shape of the plurality of openings included in the electron beam shielding member 28 may have a spread along the electron beam irradiation direction in order to allow the electron beam to pass efficiently.
  • blanking electrode array 26 may be a blanking 'aperture array' device.
  • the wafer projection system 114 focuses a plurality of electron beams independently, and a third multi-axis electron lens 34 that reduces the irradiation diameter of the electron beam, and independently focuses a plurality of electron beams.
  • a fourth multi-axis electron lens 36 that adjusts the focus of the plurality of electron beams; and a deflecting unit 38 that deflects the plurality of electron beams to desired positions on the wafer 44 independently for each electron beam.
  • a fifth multi-axis electron lens 52 that functions as an objective lens for the wafer 44 and independently focuses a plurality of electron beams.
  • the control system 140 includes an overall control unit 130 and an individual control unit 120.
  • Individual control unit Reference numeral 120 denotes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, a blanking electrode array control unit 86, a deflection control unit 92, and a wafer controller.
  • Control unit 96 The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.
  • the electron beam controller 80 controls the electron gun 10.
  • the multi-axis electronic lens control unit 82 includes the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36, and the fifth multi-axis The current supplied to the electronic lens 52 is controlled.
  • the molding / deflecting control section 84 controls the first molding / deflecting section 18 and the second molding / deflecting section 20.
  • the blanking electrode array controller 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26.
  • the deflection controller 92 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 38.
  • Wafer stage control section 96 controls wafer stage drive section 48 to move wafer stage 46 to a predetermined position.
  • a plurality of electron guns 10 generate a plurality of electron beams.
  • the first molded member 14 emits a plurality of electron beams generated by a plurality of electron guns 10 and applied to the first molded member 14 to a plurality of openings provided in the first molded member 14. It is molded by passing through.
  • the electron beam that has passed through the first molded member 14 has a rectangular cross-sectional shape corresponding to the shape of the penetrating portion included in the first molded member 14.
  • a plurality of electron beams may be generated by further including means for dividing an electron beam generated in the electron gun 10 into a plurality of electron beams.
  • the first multi-axis electron lens 16 independently converges a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second formed member 22 for each electron beam.
  • the first shaping deflection unit 18 deflects a plurality of rectangularly shaped electron beams to a desired position with respect to the second shaping member independently for each electron beam.
  • the second shaping / deflecting unit 20 deflects the plurality of electron beams deflected by the first shaping / deflecting unit 18 in a direction substantially perpendicular to the second shaping member 22 independently for each electron beam.
  • the electron beam is An adjustment is made so that the desired position of the member 22 is irradiated substantially perpendicularly to the second molding member 22.
  • the second molded member 22 including a plurality of rectangular shaped through-holes is provided with a plurality of electron beams having a rectangular cross-sectional shape illuminated to the respective through-holes, and a desired rectangular shape to be irradiated onto the wafer 44. Is further shaped into an electron beam having a cross-sectional shape of
  • the second multi-axis electron lens 24 converges the plurality of electron beams independently, and performs the focus adjustment of the electron beam to the blanking electrode array 26 independently for each electron beam.
  • the electron beam focused by the second multi-axis electron lens 24 passes through a plurality of apertures included in the blanking electrode array 26.
  • the blanking electrode array control unit 86 controls whether or not to apply a voltage to a deflection electrode formed in the blanking electrode array 26 and provided near each aperture.
  • the blanking electrode array 26 switches whether or not to irradiate the electron beam onto the wafer 44 based on the voltage applied to the deflection electrode.
  • a voltage When a voltage is applied, the electron beam that has passed through the aperture is deflected, cannot pass through the opening included in the electron beam shielding member 28, and is not irradiated on the wafer 44.
  • no voltage the electron beam that has passed through the aperture is not deflected, can pass through the opening included in the electron beam shielding member 28, and is irradiated on the wafer 44.
  • the electron beam not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the electron beam diameter of the electron beam passing through the third multi-axis electron lens 34. The reduced electron beam passes through an opening included in the electron beam shielding member 28. Further, the electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. Then, the fourth multi-axis electron lens 36 independently focuses the incident electron beams, and adjusts the focus of the electron beams with respect to the deflection unit 38, respectively. The electron beam whose focus has been adjusted by the fourth multi-axis electron lens 36 is incident on the deflection unit 38.
  • the plurality of deflectors included in the deflecting unit 38 determine, based on an instruction from the deflecting control unit 92, the position at which each electron beam incident on the deflecting unit 38 should be irradiated on the ⁇ ⁇ C 44. Deflect independently of each other.
  • the fifth multi-axis electron lens 52 adjusts the focus of each electron beam passing through the fifth multi-axis electron lens 52 on the wafer 44.
  • Each electron beam having a cross-sectional shape to be irradiated on the wafer 44 is irradiated to a desired position to be irradiated on the wafer 44.
  • the wafer stage drive section 48 move the wafer stage 46 in a fixed direction based on an instruction from the wafer stage control section 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is formed into a shape to be irradiated on the wafer 44, an aperture for passing the electron beam to be irradiated on the wafer 44 is determined, By deflecting each electron beam to the position to be irradiated on the wafer 44 by 8, a desired circuit pattern can be exposed on the wafer 44.
  • FIG. 2 shows an example of the structure of the slit 200 used as the first molded member 14 and the second molded member 22.
  • the slit 200 includes a substrate 208, a plurality of grooves 202 formed on the surface of the substrate 208, and a plurality of first through holes 204 formed in the substrate 208.
  • FIG. 2A is a cross-sectional view of the groove portion 202 and the first through hole 204 formed in the substrate 208.
  • the first through hole 204 extends from the back surface of the substrate 208 to the bottom surface of the groove 202.
  • the size of the opening 206 in the groove 202 of the first through hole 204 is smaller than the size of the bottom surface of the groove 202.
  • the first through hole 204 expands from the front surface to the rear surface of the substrate 208 in order to efficiently pass an electron beam.
  • the first through hole 204 may have a quadrangular pyramid shape.
  • the conductive film 210 is formed on the surface of the substrate 208.
  • the conductive film 210 has a second through hole 212 reaching the groove 202 from the surface of the conductive film 210.
  • the second through hole 2 12 preferably has a cross-sectional shape substantially the same as the size of the groove 202.
  • the second through-holes 2 12 and the grooves 202 have a circular cross-sectional shape.
  • the second through-holes 21 and the groove portions 202 may have a desired shape.
  • the coat layer 2 16 is formed on the front surface of the first through hole 204 and on the back surface of the substrate 208.
  • the coat layer 216 may be a metal layer such as platinum.
  • the coat layer 214 does not protrude into the opening region of the opening 206. Further, in this example, the coat layer 2 16 covers the entire surface of the first through hole 204, but in other examples, the coat layer 2 16 has a surface of the first through hole 204. May be partially covered.
  • FIG. 2B is a top view of the slit 200. It is preferable that the diameter of the second through hole 212 formed in the conductive film 210 and the diameter of the groove 202 formed in the substrate 208 have substantially the same size and shape.
  • the opening 206 of the first through hole 204 is formed on the bottom surface of the groove 202. The electron beam passes through the second through hole 212, is shaped into a desired rectangle by the opening 206, passes through the first through hole 204, and is exposed to the light.
  • FIG. 2C is a bottom view of the slit 200.
  • the first through hole 204 formed in the substrate 208 has an opening 206 formed on the surface of the substrate 208, and an opening 200 formed on the back surface of the substrate 208. It has an opening 2 14 larger than 6.
  • the first through hole 204 preferably has a quadrangular pyramid shape.
  • the substrate 208 is preferably made of a single crystal material, and the first through hole 204 is preferably formed in a direction along the crystal orientation of the single crystal material.
  • the opening 206 of the first through hole 204 has a square cross-sectional shape. Further, in another example, the opening 206 of the first through hole 204 may have a desired shape.
  • the slit 200 has an opening 206 smaller than the bottom of the groove 202, and the first through hole 204 is formed from the front surface of the substrate 208 toward the back surface. Due to the spread, the electron beam can be efficiently shaped into a desired rectangle.
  • the slit 200 has a coat layer 216 on the bottom surface of the substrate 208.
  • the coat layer 216 preferably has conductivity. When the coat layer 216 has conductivity, it is possible to prevent the accumulation of electric charges on the substrate 208 by an electron beam. Further, the coat layer 216 preferably has a higher thermal conductivity than the substrate 208. If the coat layer 2 16 has a higher thermal conductivity than the substrate 208, heat can be efficiently radiated in the slit 200.
  • FIG. 3 shows an example of a method for manufacturing the slit 200.
  • the manufacturing method will be described with reference to a cross-sectional view of the slit 200.
  • FIG. 3A shows a groove forming step of forming the groove 202 on the surface of the substrate 208.
  • a substrate 208 having an electrode layer 220 formed on its surface is prepared.
  • the substrate 208 is preferably a semiconductor substrate made of, for example, silicon (Si).
  • the electrode layer 220 is formed of a conductive material such as copper (Cu).
  • the electrode layer 220 is used as a conductive film forming electrode in a conductive film forming step described later.
  • a resist layer 218 is formed on the surface of the electrode layer 220.
  • a desired pattern is exposed on the resist layer 218 and a development process is performed.
  • a groove 202 is formed in the substrate 208 by, for example, ion milling or dry etching based on the resist pattern obtained by the development processing.
  • the resist layer 218 is removed.
  • the resist layer 218 is a photosensitive material, and may be, for example, a polyimide or an electron beam resist. Further, the resist layer 218 may be of a positive type or a negative type. In the exposure processing, a charged particle beam such as a laser beam, an electron beam, or an X-ray may be used as a light source. It is preferable that the resist layer 218 be made of a material corresponding to a light source used for the exposure processing. Further, the groove portion forming step may further include a step of forming an intermediate layer on the substrate 208 and a step of etching the intermediate layer using a resist pattern obtained by a development process as a mask.
  • the intermediate layer is provided between the substrate 208 and the resist layer 218.
  • the intermediate layer may be, for example, an antireflection film that reduces reflection of the irradiated light source on the substrate 208 in the exposure processing.
  • the intermediate layer is preferably dry-etched using the resist pattern as a mask.
  • the step of forming a resist pattern may be a step of forming a resist pattern by printing.
  • the electrode layer 220 may be formed as the intermediate layer.
  • FIG. 3B and FIG. 3C show an example of a step of forming the conductive film 210 on the surface of the substrate 208.
  • a conductive film 210 is deposited on the surface of the substrate 208, and an opening is formed in the conductive film 210 from the surface of the conductive film 210 at substantially the same position as the groove 202.
  • Department A second through hole 212 having the same is formed.
  • a mask member 222 having a cross section of substantially the same size as the groove 202 is inserted into the groove 202.
  • a conductive film 210 is deposited on the surface of the electrode layer 220.
  • the conductive film 210 may be formed by plating. Further, the conductive film 210 may be platinum (Pt).
  • the mask member 222 is removed.
  • the mask member 222 is preferably a rod-shaped member having substantially the same shape as the second through hole 212 to be formed in the conductive film 210.
  • the mask member 222 is preferably longer than the conductive film 210.
  • the mask member 222 may be, for example, a fiber material.
  • the mask member 222 is preferably non-conductive.
  • a plurality of mask members 222 are simultaneously formed by a mask member assembly in which a plurality of mask members 222 are arranged corresponding to the arrangement of the plurality of second through holes 212 to be formed. Insert it into the groove 202 of the In the step of inserting the mask member, the mask member 222 may be inserted into the plurality of groove portions 202 in order.
  • FIGS. 3D and 3E show an example of a through-hole forming step of forming the first through-hole 204 in the substrate 208.
  • a silicon nitride (SiN) layer 209 is deposited on the back surface of the substrate 208.
  • a silicon nitride layer 209 is deposited on the back surface of the substrate 208 by a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • a resist layer 218 is formed on the back surface of the substrate 208.
  • the resist layer 218 shown in FIG. 3D may be the same or similar material as the resist layer 218 described with reference to FIG.
  • a desired pattern is exposed on the resist layer 218, and development processing is performed.
  • the exposure and development processing performed in FIG. 3D may be performed in the same manner as the exposure and development processing described with reference to FIG.
  • the silicon nitride layer 209 is etched by, for example, dry etching.
  • the substrate 208 is etched using the etched silicon nitride layer 209 as a mask to form a first through hole 204 in the substrate 208.
  • the silicon nitride layer 209 is It is removed using phosphoric acid or the like (H 3 P 0 4).
  • the first through-hole 204 is formed from the back surface of the substrate 208 by anisotropic wet etching.
  • anisotropic wet etching a first through hole 204 smaller than the size of the bottom surface of the groove portion 202 is formed on the bottom surface of the groove portion 202 from the back surface of the substrate 208. That is, in the through-hole forming step, the first through-hole 204 having an opening smaller than the bottom of the groove 202 is formed on the bottom of the groove 202.
  • a first through hole having a quadrangular pyramid shape may be formed.
  • an aqueous solution of potassium hydroxide (KOH) may be used as an etchant.
  • FIG. 3 (f) shows an example of a coating step of forming a coating layer 216 on the back surface of the substrate.
  • a conductive film such as a platinum (Pt) film is formed on the front surface of the first through hole 204 and the back surface of the substrate 208.
  • a conductive film such as a platinum film may be formed on the front surface of the first through hole 204 and the back surface of the substrate 208 by, for example, a sputtering method.
  • coating step, yo by forming a conductive film such as platinum film on a part of the first through hole 2 0 4 surface les, 0
  • a slit having an opening 206 having a desired size can be accurately and easily manufactured by anisotropic jet etching.
  • the right-angled shape of the opening 206 can be manufactured accurately and easily.
  • a fine and well-shaped slit can be manufactured.
  • a slit having a plurality of openings can be easily manufactured.
  • a slit having a plurality of fine and accurate openings can be easily manufactured. Further, according to the electron beam exposure apparatus using the slit, the electron beam can be formed into a desired rectangular wave with high accuracy, and the wafer can be exposed with high accuracy.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

L'invention concerne un procédé permettant de fabriquer une fente pour former un faisceau d'électrons selon une forme voulue, comprenant une étape de fabrication de rainures dans la surface d'un substrat, et une étape de fabrication de trous traversants plus petits que ceux de la surface inférieure de la rainure de la surface inférieure des rainures, au moyen d'une gravure humide anisotrope.
PCT/JP2002/001068 2001-02-08 2002-02-08 Procede de fabrication d'une fente, fente, et systeme d'exposition de faisceau a electrons WO2002063662A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001032988A JP2002237441A (ja) 2001-02-08 2001-02-08 スリット製造方法、スリット、及び電子ビーム露光装置
JP2001-32988 2001-02-08

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WO2002063662A1 true WO2002063662A1 (fr) 2002-08-15

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2014049236A (ja) * 2012-08-30 2014-03-17 Advantest Corp 電子ビーム検出器、電子ビーム処理装置及び電子ビーム検出器の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5897888B2 (ja) * 2011-12-07 2016-04-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置

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Publication number Priority date Publication date Assignee Title
JPS63110635A (ja) * 1986-10-27 1988-05-16 Sharp Corp 電子ビ−ム描画装置用アパ−チヤ
JPH0251832A (ja) * 1988-05-31 1990-02-21 Siemens Ag リソグラフイ装置用ビーム形成絞りの製造方法
JPH0794386A (ja) * 1993-09-20 1995-04-07 Toppan Printing Co Ltd 荷電ビーム露光用透過マスク及びその製造方法
JPH10144249A (ja) * 1996-11-06 1998-05-29 Hitachi Ltd イオンビーム投射方法およびイオンビーム投射装置
JPH10261566A (ja) * 1997-03-18 1998-09-29 Toshiba Corp ビーム電流測定用貫通孔の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110635A (ja) * 1986-10-27 1988-05-16 Sharp Corp 電子ビ−ム描画装置用アパ−チヤ
JPH0251832A (ja) * 1988-05-31 1990-02-21 Siemens Ag リソグラフイ装置用ビーム形成絞りの製造方法
JPH0794386A (ja) * 1993-09-20 1995-04-07 Toppan Printing Co Ltd 荷電ビーム露光用透過マスク及びその製造方法
JPH10144249A (ja) * 1996-11-06 1998-05-29 Hitachi Ltd イオンビーム投射方法およびイオンビーム投射装置
JPH10261566A (ja) * 1997-03-18 1998-09-29 Toshiba Corp ビーム電流測定用貫通孔の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014049236A (ja) * 2012-08-30 2014-03-17 Advantest Corp 電子ビーム検出器、電子ビーム処理装置及び電子ビーム検出器の製造方法
US8779378B2 (en) 2012-08-30 2014-07-15 Advantest Corp. Electron beam detector, electron beam processing apparatus, and method of manufacturing electron beam detector

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