JP2002151798A5 - - Google Patents
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- Publication number
- JP2002151798A5 JP2002151798A5 JP2001281328A JP2001281328A JP2002151798A5 JP 2002151798 A5 JP2002151798 A5 JP 2002151798A5 JP 2001281328 A JP2001281328 A JP 2001281328A JP 2001281328 A JP2001281328 A JP 2001281328A JP 2002151798 A5 JP2002151798 A5 JP 2002151798A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- doped
- grown
- angstroms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 118
- 150000004767 nitrides Chemical class 0.000 description 114
- 239000012535 impurity Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 44
- 239000000758 substrate Substances 0.000 description 30
- 238000005253 cladding Methods 0.000 description 22
- 239000000203 mixture Substances 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000002265 prevention Effects 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002431 hydrogen Chemical group 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001281328A JP4492013B2 (ja) | 1997-02-17 | 2001-09-17 | 窒化物半導体素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3173397 | 1997-02-17 | ||
| JP9-31733 | 1997-02-17 | ||
| JP2001281328A JP4492013B2 (ja) | 1997-02-17 | 2001-09-17 | 窒化物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05123297A Division JP3434162B2 (ja) | 1997-02-17 | 1997-03-06 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151798A JP2002151798A (ja) | 2002-05-24 |
| JP2002151798A5 true JP2002151798A5 (enrdf_load_stackoverflow) | 2005-02-17 |
| JP4492013B2 JP4492013B2 (ja) | 2010-06-30 |
Family
ID=26370245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001281328A Expired - Fee Related JP4492013B2 (ja) | 1997-02-17 | 2001-09-17 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4492013B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2741381B1 (en) | 2012-12-06 | 2020-05-06 | Nichia Corporation | Semiconductor laser element |
| CN111697428B (zh) * | 2020-06-16 | 2021-08-10 | 东莞理工学院 | 一种氮化镓基激光二极管外延结构及其制备方法 |
| CN113895131B (zh) * | 2021-12-13 | 2022-03-01 | 成都中建材光电材料有限公司 | 光伏组件层压装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3509260B2 (ja) * | 1994-03-08 | 2004-03-22 | 住友化学工業株式会社 | ３−５族化合物半導体と発光素子 |
| JP3250438B2 (ja) * | 1995-03-29 | 2002-01-28 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JPH09129920A (ja) * | 1995-10-27 | 1997-05-16 | Sumitomo Chem Co Ltd | 発光素子用３−５族化合物半導体及び発光素子 |
| JP3778609B2 (ja) * | 1996-04-26 | 2006-05-24 | 三洋電機株式会社 | 半導体素子の製造方法 |
| JP3325479B2 (ja) * | 1997-01-30 | 2002-09-17 | 株式会社東芝 | 化合物半導体素子及びその製造方法 |
-
2001
- 2001-09-17 JP JP2001281328A patent/JP4492013B2/ja not_active Expired - Fee Related
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