JP2002134756A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JP2002134756A JP2002134756A JP2000326581A JP2000326581A JP2002134756A JP 2002134756 A JP2002134756 A JP 2002134756A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2002134756 A JP2002134756 A JP 2002134756A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- source
- gate insulating
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000326581A JP2002134756A (ja) | 2000-10-26 | 2000-10-26 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000326581A JP2002134756A (ja) | 2000-10-26 | 2000-10-26 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002134756A true JP2002134756A (ja) | 2002-05-10 |
JP2002134756A5 JP2002134756A5 (no) | 2005-09-08 |
Family
ID=18803742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000326581A Pending JP2002134756A (ja) | 2000-10-26 | 2000-10-26 | 半導体装置およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002134756A (no) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019707A (ja) * | 2004-06-01 | 2006-01-19 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2006190640A (ja) * | 2004-12-31 | 2006-07-20 | Lg Philips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
JP2006317926A (ja) * | 2005-04-15 | 2006-11-24 | Semiconductor Energy Lab Co Ltd | 表示装置、及び表示装置の作製方法 |
JP2007005775A (ja) * | 2005-05-20 | 2007-01-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2007013055A (ja) * | 2005-07-04 | 2007-01-18 | Sharp Corp | トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法 |
JP2007019490A (ja) * | 2005-06-10 | 2007-01-25 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2007043114A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2007053356A (ja) * | 2005-08-18 | 2007-03-01 | Samsung Electronics Co Ltd | 薄膜トランジスタ基板の製造方法及びそれによって製造された薄膜トランジスタ |
JP2007059895A (ja) * | 2005-07-29 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
JP2009265663A (ja) * | 2008-04-24 | 2009-11-12 | Samsung Mobile Display Co Ltd | 有機発光ディスプレイ装置及びその製造方法 |
KR100943953B1 (ko) * | 2008-04-03 | 2010-02-26 | 삼성모바일디스플레이주식회사 | 표시 장치의 제조방법 |
US7839459B2 (en) | 2004-11-15 | 2010-11-23 | Samsung Mobile Display Co., Ltd. | Flat panel display device including electrostatic discharge prevention units |
JP2011166120A (ja) * | 2010-02-12 | 2011-08-25 | Samsung Electronics Co Ltd | 薄膜トランジスター及びその形成方法 |
JP2012151417A (ja) * | 2011-01-21 | 2012-08-09 | Japan Display Central Co Ltd | 薄膜トランジスタ回路基板及びその製造方法 |
JP2013011899A (ja) * | 2009-11-16 | 2013-01-17 | Samsung Display Co Ltd | 有機発光表示装置の製造方法 |
KR101262062B1 (ko) | 2005-04-15 | 2013-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치를 제조하는 방법 |
US8563438B2 (en) | 2004-06-01 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
CN104409518A (zh) * | 2014-12-11 | 2015-03-11 | 昆山国显光电有限公司 | 薄膜晶体管及其制备方法 |
US9006043B2 (en) | 2005-07-29 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10468533B2 (en) | 2015-04-28 | 2019-11-05 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
CN113725158A (zh) * | 2021-08-31 | 2021-11-30 | 昆山龙腾光电股份有限公司 | Tft阵列基板及其制作方法 |
-
2000
- 2000-10-26 JP JP2000326581A patent/JP2002134756A/ja active Pending
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019707A (ja) * | 2004-06-01 | 2006-01-19 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US8563438B2 (en) | 2004-06-01 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7839459B2 (en) | 2004-11-15 | 2010-11-23 | Samsung Mobile Display Co., Ltd. | Flat panel display device including electrostatic discharge prevention units |
JP4490885B2 (ja) * | 2004-12-31 | 2010-06-30 | エルジー ディスプレイ カンパニー リミテッド | エレクトロルミネセンス表示装置及びその製造方法 |
JP2006190640A (ja) * | 2004-12-31 | 2006-07-20 | Lg Philips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
KR101107252B1 (ko) | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 기판및 그 제조 방법 |
US7830476B2 (en) | 2004-12-31 | 2010-11-09 | Lg Display Co., Ltd. | Electroluminescence display device comprising a drain electrode being directly contacted with the upper surface of the first transparent conductive layer and the side surface of the second conductive layer and fabricating methods thereof |
JP2006317926A (ja) * | 2005-04-15 | 2006-11-24 | Semiconductor Energy Lab Co Ltd | 表示装置、及び表示装置の作製方法 |
KR101262062B1 (ko) | 2005-04-15 | 2013-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치를 제조하는 방법 |
JP2007005775A (ja) * | 2005-05-20 | 2007-01-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2007019490A (ja) * | 2005-06-10 | 2007-01-25 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2007043114A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2007013055A (ja) * | 2005-07-04 | 2007-01-18 | Sharp Corp | トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法 |
JP4708099B2 (ja) * | 2005-07-04 | 2011-06-22 | シャープ株式会社 | トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法 |
US9006043B2 (en) | 2005-07-29 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP2007059895A (ja) * | 2005-07-29 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US7759178B2 (en) | 2005-08-18 | 2010-07-20 | Samsung Electronics Co., Ltd. | Thin film transistor substrate and fabrication thereof |
KR101267499B1 (ko) * | 2005-08-18 | 2013-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 |
JP2007053356A (ja) * | 2005-08-18 | 2007-03-01 | Samsung Electronics Co Ltd | 薄膜トランジスタ基板の製造方法及びそれによって製造された薄膜トランジスタ |
JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
JP2014115677A (ja) * | 2005-12-28 | 2014-06-26 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US11269214B2 (en) | 2005-12-28 | 2022-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US10739637B2 (en) | 2005-12-28 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US10444564B1 (en) | 2005-12-28 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US9703140B2 (en) | 2005-12-28 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR100943953B1 (ko) * | 2008-04-03 | 2010-02-26 | 삼성모바일디스플레이주식회사 | 표시 장치의 제조방법 |
JP2009265663A (ja) * | 2008-04-24 | 2009-11-12 | Samsung Mobile Display Co Ltd | 有機発光ディスプレイ装置及びその製造方法 |
US9171892B2 (en) | 2008-04-24 | 2015-10-27 | Samsung Display Co., Ltd. | Method of manufacturing an organic light emitting display device by patterning and formation of pixel and gate electrodes |
JP2012073649A (ja) * | 2008-04-24 | 2012-04-12 | Samsung Mobile Display Co Ltd | 有機発光ディスプレイ装置の製造方法 |
JP2013011899A (ja) * | 2009-11-16 | 2013-01-17 | Samsung Display Co Ltd | 有機発光表示装置の製造方法 |
US8853699B2 (en) | 2010-02-12 | 2014-10-07 | Samsung Display Co., Ltd. | Thin film transistor and method of forming the same |
JP2011166120A (ja) * | 2010-02-12 | 2011-08-25 | Samsung Electronics Co Ltd | 薄膜トランジスター及びその形成方法 |
JP2012151417A (ja) * | 2011-01-21 | 2012-08-09 | Japan Display Central Co Ltd | 薄膜トランジスタ回路基板及びその製造方法 |
CN104409518A (zh) * | 2014-12-11 | 2015-03-11 | 昆山国显光电有限公司 | 薄膜晶体管及其制备方法 |
US10468533B2 (en) | 2015-04-28 | 2019-11-05 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
CN113725158A (zh) * | 2021-08-31 | 2021-11-30 | 昆山龙腾光电股份有限公司 | Tft阵列基板及其制作方法 |
CN113725158B (zh) * | 2021-08-31 | 2024-03-12 | 昆山龙腾光电股份有限公司 | Tft阵列基板及其制作方法 |
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