JP2002134756A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2002134756A
JP2002134756A JP2000326581A JP2000326581A JP2002134756A JP 2002134756 A JP2002134756 A JP 2002134756A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2002134756 A JP2002134756 A JP 2002134756A
Authority
JP
Japan
Prior art keywords
film
electrode
source
gate insulating
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000326581A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002134756A5 (no
Inventor
Shinji Goto
真志 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000326581A priority Critical patent/JP2002134756A/ja
Publication of JP2002134756A publication Critical patent/JP2002134756A/ja
Publication of JP2002134756A5 publication Critical patent/JP2002134756A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000326581A 2000-10-26 2000-10-26 半導体装置およびその製造方法 Pending JP2002134756A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326581A JP2002134756A (ja) 2000-10-26 2000-10-26 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000326581A JP2002134756A (ja) 2000-10-26 2000-10-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002134756A true JP2002134756A (ja) 2002-05-10
JP2002134756A5 JP2002134756A5 (no) 2005-09-08

Family

ID=18803742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000326581A Pending JP2002134756A (ja) 2000-10-26 2000-10-26 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2002134756A (no)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006019707A (ja) * 2004-06-01 2006-01-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006190640A (ja) * 2004-12-31 2006-07-20 Lg Philips Lcd Co Ltd 液晶表示装置及びその製造方法
JP2006317926A (ja) * 2005-04-15 2006-11-24 Semiconductor Energy Lab Co Ltd 表示装置、及び表示装置の作製方法
JP2007005775A (ja) * 2005-05-20 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007013055A (ja) * 2005-07-04 2007-01-18 Sharp Corp トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法
JP2007019490A (ja) * 2005-06-10 2007-01-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007043114A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007053356A (ja) * 2005-08-18 2007-03-01 Samsung Electronics Co Ltd 薄膜トランジスタ基板の製造方法及びそれによって製造された薄膜トランジスタ
JP2007059895A (ja) * 2005-07-29 2007-03-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007199708A (ja) * 2005-12-28 2007-08-09 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2009265663A (ja) * 2008-04-24 2009-11-12 Samsung Mobile Display Co Ltd 有機発光ディスプレイ装置及びその製造方法
KR100943953B1 (ko) * 2008-04-03 2010-02-26 삼성모바일디스플레이주식회사 표시 장치의 제조방법
US7839459B2 (en) 2004-11-15 2010-11-23 Samsung Mobile Display Co., Ltd. Flat panel display device including electrostatic discharge prevention units
JP2011166120A (ja) * 2010-02-12 2011-08-25 Samsung Electronics Co Ltd 薄膜トランジスター及びその形成方法
JP2012151417A (ja) * 2011-01-21 2012-08-09 Japan Display Central Co Ltd 薄膜トランジスタ回路基板及びその製造方法
JP2013011899A (ja) * 2009-11-16 2013-01-17 Samsung Display Co Ltd 有機発光表示装置の製造方法
KR101262062B1 (ko) 2005-04-15 2013-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 제조하는 방법
US8563438B2 (en) 2004-06-01 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8634044B2 (en) 2005-12-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
CN104409518A (zh) * 2014-12-11 2015-03-11 昆山国显光电有限公司 薄膜晶体管及其制备方法
US9006043B2 (en) 2005-07-29 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10468533B2 (en) 2015-04-28 2019-11-05 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
CN113725158A (zh) * 2021-08-31 2021-11-30 昆山龙腾光电股份有限公司 Tft阵列基板及其制作方法

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006019707A (ja) * 2004-06-01 2006-01-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8563438B2 (en) 2004-06-01 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7839459B2 (en) 2004-11-15 2010-11-23 Samsung Mobile Display Co., Ltd. Flat panel display device including electrostatic discharge prevention units
JP4490885B2 (ja) * 2004-12-31 2010-06-30 エルジー ディスプレイ カンパニー リミテッド エレクトロルミネセンス表示装置及びその製造方法
JP2006190640A (ja) * 2004-12-31 2006-07-20 Lg Philips Lcd Co Ltd 液晶表示装置及びその製造方法
KR101107252B1 (ko) 2004-12-31 2012-01-19 엘지디스플레이 주식회사 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 기판및 그 제조 방법
US7830476B2 (en) 2004-12-31 2010-11-09 Lg Display Co., Ltd. Electroluminescence display device comprising a drain electrode being directly contacted with the upper surface of the first transparent conductive layer and the side surface of the second conductive layer and fabricating methods thereof
JP2006317926A (ja) * 2005-04-15 2006-11-24 Semiconductor Energy Lab Co Ltd 表示装置、及び表示装置の作製方法
KR101262062B1 (ko) 2005-04-15 2013-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 제조하는 방법
JP2007005775A (ja) * 2005-05-20 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007019490A (ja) * 2005-06-10 2007-01-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007043114A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007013055A (ja) * 2005-07-04 2007-01-18 Sharp Corp トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法
JP4708099B2 (ja) * 2005-07-04 2011-06-22 シャープ株式会社 トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法
US9006043B2 (en) 2005-07-29 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2007059895A (ja) * 2005-07-29 2007-03-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7759178B2 (en) 2005-08-18 2010-07-20 Samsung Electronics Co., Ltd. Thin film transistor substrate and fabrication thereof
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
JP2007053356A (ja) * 2005-08-18 2007-03-01 Samsung Electronics Co Ltd 薄膜トランジスタ基板の製造方法及びそれによって製造された薄膜トランジスタ
JP2007199708A (ja) * 2005-12-28 2007-08-09 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2014115677A (ja) * 2005-12-28 2014-06-26 Semiconductor Energy Lab Co Ltd 表示装置
US11269214B2 (en) 2005-12-28 2022-03-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US10739637B2 (en) 2005-12-28 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US10444564B1 (en) 2005-12-28 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US9703140B2 (en) 2005-12-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8634044B2 (en) 2005-12-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR100943953B1 (ko) * 2008-04-03 2010-02-26 삼성모바일디스플레이주식회사 표시 장치의 제조방법
JP2009265663A (ja) * 2008-04-24 2009-11-12 Samsung Mobile Display Co Ltd 有機発光ディスプレイ装置及びその製造方法
US9171892B2 (en) 2008-04-24 2015-10-27 Samsung Display Co., Ltd. Method of manufacturing an organic light emitting display device by patterning and formation of pixel and gate electrodes
JP2012073649A (ja) * 2008-04-24 2012-04-12 Samsung Mobile Display Co Ltd 有機発光ディスプレイ装置の製造方法
JP2013011899A (ja) * 2009-11-16 2013-01-17 Samsung Display Co Ltd 有機発光表示装置の製造方法
US8853699B2 (en) 2010-02-12 2014-10-07 Samsung Display Co., Ltd. Thin film transistor and method of forming the same
JP2011166120A (ja) * 2010-02-12 2011-08-25 Samsung Electronics Co Ltd 薄膜トランジスター及びその形成方法
JP2012151417A (ja) * 2011-01-21 2012-08-09 Japan Display Central Co Ltd 薄膜トランジスタ回路基板及びその製造方法
CN104409518A (zh) * 2014-12-11 2015-03-11 昆山国显光电有限公司 薄膜晶体管及其制备方法
US10468533B2 (en) 2015-04-28 2019-11-05 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
CN113725158A (zh) * 2021-08-31 2021-11-30 昆山龙腾光电股份有限公司 Tft阵列基板及其制作方法
CN113725158B (zh) * 2021-08-31 2024-03-12 昆山龙腾光电股份有限公司 Tft阵列基板及其制作方法

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