JP2002131164A - Package for pressure detection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a pressure detection device small in size, highly sensible and capable of accurately detecting an external pressure without the variation. SOLUTION: In a package for the pressure detection device, a semiconductor element 3 is mounted on one side of a main plane of an insulating substrate 1, and a first electrode 7 for generating the electrostatic capacity and a metallized bonding layer 8 surrounding the first electrode 7 are disposed on the other side of the main plane. A second electrode 9 opposing to the first electrode 7 is disposed on inside plane of an insulating plate 2, and the metallized bonding layer 8 is brazed on the peripheral section of the electrode 9, thereby the insulating plate 2 is bonded on another side of the main plane of the insulating substrate 1 so flexible that a sealed space is formed between the insulting substrate 1 and the insulating plate 2. An insulting layer 10 in contact with the insulating substrate 1 is attached between the brazed peripheral section and the central section of the second electrode 9 opposing to the first electrode 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure detecting device package used for a pressure detecting device for detecting pressure.

[0002]

2. Description of the Related Art Conventionally, a capacitance type pressure detecting device has been known as a pressure detecting device for detecting pressure. As shown in a sectional view of FIG. 2, for example, a capacitance type pressure sensing element 22 and a package 28 are provided on a wiring board 21 made of a ceramic material or a resin material.
And a semiconductor element 29 for arithmetic operation accommodated in the computer. The pressure-sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material.
An insulating substrate 24 having a concave portion with
An insulating plate 26 which is joined in a flexible state on the upper surface of the insulating substrate 24 so as to form a sealed space between the insulating substrate 24 and the other electrode 25 for forming a capacitance on the lower surface; Each of the electrodes 23 and 25 for forming a capacitance includes an external lead terminal 27 for electrically connecting the electrode to the outside, and each of the capacitances is formed by bending the insulating plate 26 in response to an external pressure. The capacitance formed between the forming electrodes 23 and 25 changes. An external pressure can be detected by subjecting the change in capacitance to arithmetic processing by the arithmetic semiconductor element 29.

[0003]

However, according to the conventional pressure detecting device, the pressure-sensitive element 22 and the semiconductor element 29 are not provided.
Are individually mounted on the wiring board 21, which increases the size of the pressure detecting device and the pressure detecting electrode.
The wiring between 23 and 25 and the semiconductor element 29 becomes longer,
There is a problem that the sensitivity is low because an unnecessary capacitance is formed between the long wires.

Accordingly, the applicant of the present application has previously filed Japanese Patent Application No. 2000-178.
No. 618, an insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and a plurality of wirings disposed on and inside the insulating base and electrically connected to respective electrodes of the semiconductor element. A conductor, a first electrode for forming a capacitance, which is attached to a central portion of the other main surface of the insulating base and is electrically connected to one of the wiring conductors, and on the other main surface of the insulating base, An insulating plate joined in a flexible state so as to form a sealed space with the central portion of the main surface; and a wiring conductor attached to the inner main surface of the insulating plate so as to face the first electrode, and And a package for a pressure detection device comprising a second electrode for forming a capacitance which is electrically connected to the other one. According to this pressure detecting device package, a first electrode for forming a capacitance is provided on the other main surface of the insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and the first electrode is provided on the first electrode. Since the insulating plate having the opposing second electrode for capacitance formation on the inner surface is joined in a flexible state so as to form a sealed space with the other main surface of the insulating base, The pressure-sensitive element is formed integrally with the package containing the semiconductor element, and as a result, the pressure detection device can be reduced in size, and the wiring for connecting the electrode for pressure detection and the semiconductor element is shortened. Unnecessary capacitance generated between the wirings can be reduced. In the package for a pressure detecting device proposed in Japanese Patent Application No. 2000-178618, a frame made of ceramics or metal is provided on the outer peripheral portion of the other main surface of the insulating base so as to surround the first electrode. The insulating plate was joined to the insulating base by brazing the outer peripheral portion of the second electrode on the frame via a brazing material such as silver-copper brazing material.

However, according to the pressure sensing device package proposed in Japanese Patent Application No. 2000-178618, the outer peripheral portion of the second electrode of the insulating plate is formed on a frame made of ceramics or metal by a brazing material such as silver-copper brazing material. The thickness of the brazing material that joins the two depends on the temperature and atmosphere of brazing.
It is difficult to be constant due to variations in load, etc., so that the distance between the first electrode and the second electrode varies greatly, and a large amount of brazing material joining both flows out to the center of the second electrode. Easy to do. And the capacitance formed between the first electrode and the second electrode greatly varies due to such a variation in the distance between the first electrode and the second electrode and the brazing material flowing out to the center of the second electrode. Sisters,
As a result, there is a problem that it is difficult to accurately detect the external pressure.

The present invention has been completed in view of the above-mentioned problems, and has as its object to provide a pressure detecting device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure without variation. Is to provide.

[0007]

According to the present invention, there is provided a pressure sensing device package having a plurality of wiring conductors inside and on a surface, a mounting portion for mounting a semiconductor element on one main surface, and a mounting portion on the other main surface. A first electrode for forming a capacitance electrically connected to one of the wiring conductors and a frame-shaped joining metallization layer surrounding the first electrode and electrically connected to the other one of the wiring conductors; An insulating base having a second electrode for forming a capacitance, the central part of which is opposed to the first electrode on one main surface and the outer peripheral part of which is brazed to the metallization layer for bonding, and the other of the insulating base A pressure detecting device package comprising: an insulating plate joined to an insulating base in a flexible state so as to form a sealed space between the main surface and the second electrode;
A frame-shaped insulating layer that is in contact with the other main surface of the insulating base is provided between the brazed outer peripheral portion and a central portion facing the first electrode.

According to the pressure detecting device package of the present invention, the first electrode for forming the capacitance is formed at the center of the other main surface of the insulating base having the mounting portion on which the semiconductor element is mounted on one main surface. And an insulating plate having a second electrode for forming a capacitance opposed to the first electrode is bonded in a flexible state so as to form a closed space between the insulating plate and the insulating base. The pressure-sensitive element is formed integrally with the package containing the semiconductor element. As a result, the pressure detecting device can be reduced in size and the wiring for connecting the pressure detecting electrode and the semiconductor element can be shortened. Unnecessary capacitance generated between the wirings can be reduced. Further, since the insulating layer that is in contact with the insulating base is applied between the outer peripheral portion of the second electrode brazed to the bonding metallized layer of the insulating base and the central portion facing the first electrode, the first electrode The gap between the second electrode and the second electrode is precisely defined by the insulating layer applied to the second electrode, and the brazing material joining the joining metallized layer and the second electrode is opposed to the first electrode. Does not flow out to the central portion of the first electrode, and as a result, there is no large variation in the capacitance formed between the first electrode and the second electrode.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a pressure detection device package according to the present invention.
1 is an insulating base, 2 is an insulating plate, and 3 is a semiconductor element.

The insulating substrate 1 is made of a ceramic material such as a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of mullite, a sintered body of silicon carbide, a sintered body of silicon nitride, and glass-ceramics. For example, in the case of an aluminum oxide sintered body, an organic binder suitable for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc.
A solvent, a plasticizer, and a dispersant are added and mixed to form a slurry, and this is formed into a sheet by employing a conventionally known doctor blade method to obtain a plurality of ceramic green sheets. The green ceramic sheet is subjected to appropriate punching, laminating, and cutting to obtain a green ceramic molded body for the insulating substrate 1 and is fired at a temperature of about 1600 ° C. to produce the green ceramic molded body.

The insulating substrate 1 has a concave portion 1a for accommodating the semiconductor element 3 in the center of the lower surface thereof, and thereby functions as a container for accommodating the semiconductor element 3. The central portion of the bottom surface of the concave portion 1a is a mounting portion 1b on which the semiconductor element 3 is mounted. The semiconductor element 3 is mounted on the mounting portion 1b and a resin sealing such as an epoxy resin is formed in the concave portion 1a. The semiconductor element 3 is sealed by filling the material 4. In this example, the semiconductor element 3 is sealed by filling a resin sealing material 4 into the concave portion 1a. However, the semiconductor element 3 is provided with a lid made of metal or ceramic on the lower surface of the insulating base 1 in the concave portion 1a. It may be sealed by joining so as to close.

A plurality of metallized wiring conductors 5 connected to the respective electrodes of the semiconductor element 3 are led out from the mounting portion 1b, and the metallized wiring conductor 5 and the respective electrodes of the semiconductor element 3 are connected to the solder bumps 6 and the like. By bonding via a conductive bonding member made of a conductive material, each electrode of the semiconductor element 3 is electrically connected to each metallized wiring conductor 5, and the semiconductor element 3 is fixed to the mounting portion 1b. In this example, the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected via the solder bumps 6, but the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected to another type of electric wire such as a bonding wire. May be connected by a dynamic connection means.

The metallized wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to an external electric circuit and a first electrode 7 and a second electrode 9, which will be described later.
A part thereof is led out to the lower surface of the outer periphery of the insulating base 1, and another part is electrically connected to the first electrode 7 and the second electrode 9. Then, each electrode of the semiconductor element 3 is electrically connected to these metallized wiring conductors 5 via a conductive bonding material, and the semiconductor element 3 is sealed with a resin sealing material 4. The semiconductor element 3 housed therein is electrically connected to the external electric circuit by joining the portion led out to the lower surface of the outer periphery of the insulating base 1 to the wiring conductor of the external electric circuit board via a conductive bonding material such as solder. The Rukoto.

The metallized wiring conductor 5 is made of metallized metal powder such as tungsten, molybdenum, copper, silver, etc., and is mixed with a metal powder such as tungsten by adding an appropriate organic binder, solvent, plasticizer, dispersant and the like. The metallized paste obtained as described above is applied to a ceramic green sheet for the insulating substrate 1 in a predetermined pattern by employing a conventionally known screen printing method, and is fired together with the green ceramic molded body for the insulating substrate 1 for insulation. A predetermined pattern is formed inside and on the surface of the base 1. In addition, in order to prevent the metallized wiring conductor 5 from being oxidized and corroded and to make the metallized wiring conductor 5 and a conductive bonding material such as solder good, the exposed surface of the metallized wiring conductor 5 is usually formed on the exposed surface. In this case, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially applied.

A first electrode 7 for forming a capacitance is attached to the center of the upper surface of the insulating base 1. The first electrode 7 is for forming a capacitance for a pressure-sensitive element together with a second electrode 9 described later, and is formed, for example, in a substantially circular pattern. One of the metallized wiring conductors 5a is connected to the first electrode 7 so that the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5a via a conductive bonding material such as a solder bump 6. Then, the electrode of the semiconductor element 3 and the first electrode 7 are electrically connected.

The first electrode 7 is made of metal powder of tungsten, molybdenum, copper, silver, or the like.
A metallized paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and a dispersant to a metal powder such as tungsten is mixed with an insulating substrate 1 by using a conventionally known screen printing method.
A ceramic green sheet for printing is applied and baked together with a green ceramic molded body for the insulating substrate 1 to form a predetermined pattern at the center of the upper surface of the insulating substrate 1. In addition, in order to prevent the first electrode 7 from being oxidized and corroded, the exposed surface of the first electrode 7 is usually
A nickel plating layer having a thickness of about 1 to 10 μm is applied.

A substantially circular frame-shaped bonding metallization layer 8 surrounding the first electrode 7 is adhered to the outer peripheral portion of the upper surface of the insulating base 1. The insulating plate 2 having the two electrodes 9 is attached by brazing the outer peripheral portion of the second electrode 9 and the joining metallized layer 8 via a brazing material such as a silver-copper brazing material.

One of the metallized wiring conductors 5b is connected to the bonding metallized layer 8 so that the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5b via a conductive bonding material such as a solder bump 6. When the electrodes are electrically connected, the electrodes of the semiconductor element 3 and the second electrodes 9 are electrically connected.

The bonding metallization layer 8 is made of metal powder metallization such as tungsten, molybdenum, copper, silver, etc.
A metallized paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and a dispersant to a metal powder such as tungsten is mixed with an insulating substrate 1 by using a conventionally known screen printing method.
A ceramic green sheet for printing is applied and baked together with a green ceramic molded body for the insulating substrate 1 to form a predetermined frame-shaped pattern on the outer peripheral portion of the upper surface of the insulating substrate 1. The exposed surface of the metallizing layer 8 for bonding is usually formed on the exposed surface of the metallizing layer 8 for bonding in order to prevent the metallizing layer 8 for bonding from being oxidized and corroded and to strengthen the bonding between the metallizing layer 8 for bonding and the brazing material. If the thickness is 1-10
A nickel plating layer of about μm is applied.

The insulating plate 2 attached to the upper surface of the insulating base 1 is made of an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon nitride sintered body, a silicon carbide sintered body. It is a flat plate having a thickness of about 0.01 to 5 mm and formed of a ceramic material such as a sintered body or glass-ceramic and having a thickness of about 0.01 to 5 mm, which is bent toward the insulating substrate 1 in response to external pressure. Functions as a diaphragm.

If the thickness of the insulating plate 2 is less than 0.01 mm, the mechanical strength of the insulating plate 2 becomes small, so that there is a great risk that the insulating plate 2 will be broken when a large external pressure is applied thereto. On the other hand, if it exceeds 5 mm, it becomes difficult to bend under a small pressure, and it becomes unsuitable as a diaphragm for pressure detection. Therefore, the thickness of the insulating plate 2 is preferably in the range of 0.01 to 5 mm.

If the insulating plate 2 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, and a plastic suitable for a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A ceramic green sheet is obtained by adding and mixing a dispersing agent and a dispersing agent to form a slurry, and forming this into a sheet by employing a well-known doctor blade method. Thereafter, the ceramic green sheet is appropriately punched. By processing and cutting, a green ceramic molded body for the insulating plate 2 is obtained, and this green ceramic molded body is
It is manufactured by firing at a temperature of 00 ° C.

A substantially circular or substantially octagonal second electrode 9 is formed on the lower surface of the insulating plate 2 for forming a capacitance. The second electrode 9 functions as an electrode for forming a capacitance for a pressure-sensitive element together with the above-described first electrode 7, and serves as a bonding base metal layer for bonding the insulating plate 2 to the insulating base 1. Function.

The second electrode 9 is made of a metal powder of tungsten, molybdenum, copper, silver or the like.
A metallized paste obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten is printed and applied to a ceramic green sheet for the insulating plate 2 by using a conventionally known screen printing method. By firing this together with the green ceramic molded body for the insulating plate 2, a predetermined pattern is formed on substantially the entire lower surface of the insulating plate 2. In order to prevent the second electrode 9 from being oxidized and corroded and to improve the bonding between the second electrode 9 and the brazing material, the exposed surface of the second electrode 9 usually has a thickness of 1 mm.
A nickel plating layer of about 10 μm is applied.

The second electrode 9 and the joining metallization layer 8 are joined via a brazing material such as a silver-copper brazing material, so that the upper surface of the insulating base 1 and the lower surface of the insulating plate 2 are connected. A sealed space is formed at the same time, and the bonding metallized layer 8 and the second electrode 9 are electrically connected.

At this time, the first electrode 7 and the second electrode 9
The space between the insulating base 1 and the insulating plate 2 is opposed to each other with a space formed therebetween. The areas of the first electrode 7 and the second electrode 9 and the first electrode 7 and the second electrode 9 A predetermined capacitance is formed in accordance with the distance between. When an external pressure is applied to the upper surface of the insulating plate 2, the insulating plate 2 bends toward the insulating base 1 according to the pressure, and the distance between the first electrode 7 and the second electrode 9 changes. Since the capacitance between the first electrode 7 and the second electrode 9 changes, it functions as a pressure-sensitive element that detects a change in external pressure as a change in capacitance.
Then, the change of the capacitance is transmitted to the semiconductor element 3 housed in the recess 1a via the metallized wiring conductors 5a and 5b, and the magnitude of the external pressure is known by performing arithmetic processing on the semiconductor element 3. be able to.

As described above, according to the pressure detecting device package of the present invention, the first electrode for forming the capacitance is provided on the other main surface of the insulating base 1 on which the semiconductor element 3 is mounted on one main surface. 7 and an insulating plate 2 having an inner surface facing the first electrode 7 and having a second electrode 9 for forming a capacitance is formed in a flexible state so as to form a closed space between the insulating plate 2 and the insulating base 1. Because of the joining, the container accommodating the semiconductor element 3 and the pressure-sensitive element are integrated, and as a result, the size of the pressure detection device can be reduced. Further, since the first electrode 7 and the second electrode 9 for forming the capacitance are connected to the semiconductor element 3 via the metallized wiring conductors 5a and 5b provided on the insulating base 1, the first electrode 7 and the second electrode 9 are formed. The electrode 9 can be connected to the semiconductor element 3 over a short distance, and as a result, an unnecessary capacitance generated between these metallized wiring conductors 5a and 5b is reduced to provide a highly sensitive pressure detecting device. Can be.

Further, the surface of the second electrode 9 has a substantially circular shape in contact with the upper surface of the insulating base 1 between the outer peripheral portion brazed to the bonding metallized layer 8 and the central portion facing the first electrode 7. A frame-shaped insulating layer 10 is applied. This insulating layer 10
Is made of, for example, a ceramic material substantially the same as the insulating plate 2, and the outer peripheral portion of the second electrode 9 is
When brazing, the first electrode 7 and the second electrode 9 function as a spacer for maintaining a predetermined interval, and a part of the brazing material is prevented from flowing out to the central portion of the second electrode 9. Functions as a dam member for prevention. A frame-shaped insulating layer 10 abutting on the upper surface of the insulating base 1 between the outer peripheral portion brazed to the bonding metallization layer 8 of the second electrode 9 and the central portion facing the first electrode 7 in this manner. Is applied, when the outer peripheral portion of the second electrode 9 is brazed to the bonding metallized layer 8, the distance between the insulating base 1 and the insulating plate 2 is accurately defined by the thickness of the insulating layer 10, Therefore, it is possible to effectively prevent a large variation in the interval between the first electrode 7 and the second electrode 9. At the same time,
The insulating layer 10 effectively prevents a part of the brazing material from flowing to the center of the second electrode 9. Therefore, according to the pressure detecting device package of the present invention, there is no large variation in the capacitance formed between the first electrode 7 and the second electrode 9, and the external pressure can be accurately detected. And a pressure detection device capable of detecting the pressure.

When the insulating layer 10 has a thickness of less than 0.01 mm, when a large pressure is applied to the insulating plate 2, the first electrode 7 and the second electrode 9 come into contact with each other to detect the pressure. On the other hand, if it exceeds 0.2 mm, when the metallized layer 8 for bonding and the outer peripheral portion of the second electrode 9 are brazed, the outer periphery of the metallized layer 8 for bonding and the outer There is a tendency that it is difficult to satisfactorily join the portions with high airtightness. Therefore, the thickness of the insulating layer 10 is 0.01
A range of .about.0.2 mm is preferred. When the width of the insulating layer 10 is less than 0.1 mm, when the outer peripheral portion of the second electrode 9 is brazed to the bonding metallized layer 8, the brazing material is prevented from flowing to the central portion of the second electrode. May be unable to do so. Therefore, the width of the insulating layer 10 is preferably 0.1 mm or more.

The insulating layer 10 is made of an insulating paste obtained by adding and mixing an appropriate organic binder and a solvent to the raw material powder substantially identical to the raw material powder contained in the ceramic green sheet for the insulating plate 2. The metal paste for the second electrode 9 printed and applied to the ceramic green sheet for the insulating plate 2 is printed and applied in a predetermined pattern by using a conventionally known screen printing method, and this is formed into a green ceramic for the insulating plate 2. By firing together with the body and the metal paste for the second electrode 9, a frame-shaped pattern is formed between the brazed outer peripheral portion of the second electrode 9 and the central portion facing the first electrode 7. .

In order to join the insulating plate 2 to the insulating substrate 1, a nickel plating layer having a thickness of 1 to 10 μm is previously applied to the surfaces of the joining metallized layer 8 and the second electrode 9, respectively. The insulating base 1 and the insulating plate 2 are overlapped with a brazing material foil made of silver-copper brazing having a thickness of about 10 to 200 μm between the joining metallized layer 8 and the second electrode 9, and these are placed in a reducing atmosphere. A method is adopted in which the brazing material foil is melted by heating to a temperature of about 850 ° C., and the metallized layer for bonding 8 and the outer peripheral portion of the second electrode 9 are brazed.

Thus, according to the above-described package for a pressure detecting device, the semiconductor element 3 is mounted on the mounting portion 1b, and each electrode of the semiconductor element 3 and the metallized wiring conductor 5 are electrically connected. By sealing the element 3, a pressure detecting device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure without variation.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, in the example of the above-described embodiment, the insulating layer 10
Is formed of substantially the same material as the insulating plate 2, but the insulating layer
10 may be formed of a material different from that of the insulating plate 2. In this case, as a material different from the insulating plate 2, a glass or ceramic material having a softening point higher than the melting point of the brazing material joining the joining metallized layer 8 and the second electrode 9 may be used. An insulating paste for ceramics may be applied on the second electrode 9 attached to the insulating plate 2 in a predetermined frame shape, and the insulating layer 10 may be formed by baking this at a high temperature.

[0034]

As described above, according to the pressure detecting device package of the present invention, the first main surface of the insulating base on which the semiconductor element is mounted is provided with the second main surface for forming the capacitance. Since one electrode was provided and the insulating plate having the second electrode for forming the capacitance opposed to the first electrode was joined in a flexible state so as to form a closed space between the insulating plate and the insulating base. The container for accommodating the semiconductor element and the pressure-sensitive element are integrated, and as a result, the pressure detection device can be reduced in size and the wiring for connecting the electrode for pressure detection and the semiconductor element is shortened. An unnecessary capacitance generated between the wirings can be reduced to provide a highly sensitive pressure detection device. Further, since the insulating layer that is in contact with the insulating base is applied between the outer peripheral portion of the second electrode brazed to the bonding metallized layer of the insulating base and the central portion facing the first electrode, the first electrode The gap between the second electrode and the second electrode is precisely defined by the insulating layer applied to the second electrode, and the brazing material joining the joining metallized layer and the second electrode is opposed to the first electrode. Does not flow out to the central part of the first electrode. As a result, a large variation does not occur in the capacitance formed between the first electrode and the second electrode, and the external pressure is accurately detected without variation. A pressure detecting device capable of performing the above-described operations.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a pressure detecting device according to the present invention.

FIG. 2 is a sectional view showing a conventional pressure detecting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Insulating plate 3 ... Semiconductor element 7 ... First electrode 8 ... Metalizing layer for joining 9 ... Two electrodes 10 ... Insulating layer

Claims (1)

[Claims] 1. A mounting portion having a plurality of wiring conductors inside and on a surface and having a main surface on which a semiconductor element is mounted, and a mounting portion electrically connected to one of the wiring conductors on the other main surface. An insulating base having a first electrode for forming a capacitance and a frame-shaped joining metallization layer surrounding the first electrode and electrically connected to another one of the wiring conductors; Has a second electrode for forming a capacitance, which is opposed to the first electrode and whose outer peripheral portion is brazed to the metallizing layer for bonding, so as to form a closed space with the other main surface. A pressure sensing device package comprising an insulating plate bonded to the insulating base in a flexible state,
The second electrode is characterized in that a frame-shaped insulating layer that is in contact with the other main surface is applied between the brazed outer peripheral portion and a central portion facing the first electrode. Pressure sensing device package.