JP2002107253A - Package for pressure detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized and sensitive pressure detector capable of precisely detecting an external pressure without dispersion. SOLUTION: This package for pressure detector comprises a substantially square plate-like insulating base 1 having a mount part 1b for mounting a semiconductor element 3 on one main surface and an electrostatic capacitance forming first electrode 7 fixed to the center of the other main surface; a frame 1c with a circular inner circumference and a substantially square outer circumference, which is bonded to the other main surface circumferential part of the insulating base 1 so as to enclose the first electrode 7; and a substantially octagonal plate-like insulating plate 2 having, on one main surface, an electrostatic capacitance forming substantially circular second electrode 9 opposed to the first electrode 7 in the center part and blazed onto the frame 1c in the circumferential part, and mounted on the frame 1c in a flexible state so as to form a sealed space with the insulating base 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure detecting device package used for a pressure detecting device for detecting pressure.

[0002]

2. Description of the Related Art Conventionally, a capacitance type pressure detecting device has been known as a pressure detecting device for detecting pressure. As shown in a sectional view of FIG. 6, for example, a capacitance type pressure sensing element 22 and a package 28 are mounted on a wiring board 21 made of a ceramic material or a resin material.
And a semiconductor element 29 for arithmetic operation accommodated in the computer. The pressure-sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material.
An insulating substrate 24 having a concave portion with
An insulating plate 26 which is joined in a flexible state on the upper surface of the insulating substrate 24 so as to form a sealed space between the insulating substrate 24 and the other electrode 25 for forming a capacitance on the lower surface; Each of the electrodes 23 and 25 for forming a capacitance includes an external lead terminal 27 for electrically connecting the electrode to the outside, and each of the capacitances is formed by bending the insulating plate 26 in response to an external pressure. The capacitance formed between the forming electrodes 23 and 25 changes. An external pressure can be detected by subjecting the change in capacitance to arithmetic processing by the arithmetic semiconductor element 29.

[0003]

However, according to the conventional pressure detecting device, the pressure-sensitive element 22 and the semiconductor element 29 are not provided.
Are individually mounted on the wiring board 21, which increases the size of the pressure detecting device and the pressure detecting electrode.
The wiring between 23 and 25 and the semiconductor element 29 becomes longer,
There is a problem that the sensitivity is low because an unnecessary capacitance is formed between the long wires.

Accordingly, the applicant of the present application has previously filed Japanese Patent Application No. 2000-17.
8618, an insulating base having a mounting portion on which a semiconductor element is mounted on one main surface; and a plurality of wiring conductors disposed on and inside the insulating base and electrically connected to respective electrodes of the semiconductor element. A first electrode for forming a capacitance, which is attached to the center of the other main surface of the insulating base and is electrically connected to one of the wiring conductors; An insulating plate joined in a flexible state so as to form a sealed space with the central portion of the main surface; and an inner main surface of the insulating plate, which is attached to face the first electrode and faces the first electrode. A pressure detection device package including a second electrode for forming a capacitance electrically connected to another one has been proposed. According to this pressure detecting device package, a first electrode for forming a capacitance is provided on the other main surface of the insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and the first electrode is Since the insulating plate having the opposing second electrode for capacitance formation on the inner surface is joined in a flexible state so as to form a sealed space with the other main surface of the insulating base, The pressure-sensitive element is formed integrally with the package containing the semiconductor element. As a result, the pressure detection device can be made small, and the wiring connecting the electrode for pressure detection and the semiconductor element is shortened. Unnecessary capacitance generated between the wirings can be reduced. In the pressure sensing device package proposed in Japanese Patent Application No. 2000-178618, a frame made of ceramics or metal is provided on the outer peripheral portion of the other main surface of the insulating base so as to surround the first electrode, The outer peripheral portion of the second electrode was brazed on this frame via a brazing material such as silver-copper brazing to join the insulating plate to the insulating base. Usually, in such a package, the outer periphery of the insulating base or the insulating plate is substantially square in consideration of the productivity, the first electrode is substantially circular, and the second electrode is the lower surface of the insulating plate. It was formed on the entire surface. The frame also had a substantially square outer periphery and a substantially circular inner periphery corresponding to the first electrode.

However, according to this pressure detecting device package, the second electrode formed on the entire lower surface of the insulating plate having a substantially rectangular outer periphery is brazed to the upper surface of a frame having a substantially rectangular outer periphery and a circular inner periphery. Therefore, the width of the brazing is greatly different between the center of each side of the insulating plate and each corner, so the brazing material melted when brazing the insulating plate on the top of the frame is placed on each corner of the insulating plate. The concentration of the brazing material becomes highly concentrated and the thickness of the brazing material becomes non-uniform, and as a result, the capacitance formed between the first electrode and the second electrode varies greatly, so that it is impossible to accurately detect the external pressure. There was a problem that it was difficult.

The present invention has been completed in view of the above-mentioned problems, and has as its object to provide a pressure detecting device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure without variation. Is to provide.

[0007]

A package for a pressure detecting device according to the present invention has a mounting portion on one side of which a semiconductor element is mounted, and a second portion for forming a capacitance at the center of the other main surface. A substantially square plate-shaped insulating base on which one electrode is attached, and a frame having a circular inner circumference and a substantially square outer circumference joined to the outer periphery of the other main surface of the insulating base so as to surround the first electrode; A closed space between the body and a second electrode for forming a capacitance whose central part is opposed to the first electrode on one main surface and whose outer peripheral part is brazed on a frame body; And a substantially octagonal flat insulating plate attached to the frame body in a flexible state so as to form.

According to the pressure detecting device package of the present invention, a capacitance is formed at the center of the other main surface of the substantially rectangular flat insulating substrate having a mounting portion on which the semiconductor element is mounted on one main surface. While providing a first electrode for, the substantially octagonal plate-shaped insulating plate having a second electrode for capacitance formation facing this first electrode, so as to form a closed space between the insulating substrate and Since the semiconductor device is joined to the frame in a flexible state, the pressure-sensitive element is formed integrally with the package containing the semiconductor element. Unnecessary capacitance generated between these wirings can be reduced by shortening the wiring connecting the semiconductor element. further,
Since the insulating plate is substantially octagonal, the difference in the width of brazing between the center and the corner of each side of the insulating plate is small, and therefore, when brazing the second electrode to the upper surface of the frame, the brazing material is used. Is substantially uniform, and as a result, there is no large variation in the capacitance formed between the first electrode and the second electrode.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a pressure detection device package according to the present invention, and FIG. 2 is a top view thereof. In the figure, reference numeral 1 denotes an insulating base, and 2 denotes an insulating plate, which constitute a package for a pressure detecting device of the present invention.

The insulating substrate 1 is made of a ceramic material such as a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of mullite, a sintered body of silicon carbide, a sintered body of silicon nitride, and glass-ceramics. An aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, or other suitable ceramic raw material powder for an organic binder, solvent, plastic An additive and dispersant are added and mixed to form a slurry, and this is formed into a sheet by employing a conventionally known doctor blade method to obtain a plurality of ceramic green sheets. Suitable for punching and lamination
By performing a cutting process, a green ceramic molded body for the insulating substrate 1 is obtained, and the green ceramic molded body
It is manufactured by firing at a temperature of ° C.

The insulating substrate 1 has a concave portion 1a for accommodating the semiconductor element 3 in the center of the lower surface thereof, and thereby functions as a container for accommodating the semiconductor element 3. The central portion of the bottom surface of the concave portion 1a is a mounting portion 1b on which the semiconductor element 3 is mounted. The semiconductor element 3 is mounted on the mounting portion 1b and a resin sealing such as an epoxy resin is formed in the concave portion 1a. The semiconductor element 3 is sealed by filling the material 4. In this example, the semiconductor element 3 is sealed by filling a resin sealing material 4 into the concave portion 1a. However, the semiconductor element 3 is provided with a lid made of metal or ceramic on the lower surface of the insulating base 1 in the concave portion 1a. It may be sealed by joining so as to close.

A plurality of metallized wiring conductors 5 connected to the respective electrodes of the semiconductor element 3 are led out from the mounting portion 1b. The metallized wiring conductor 5 and the respective electrodes of the semiconductor element 3 are connected to the solder bumps 6 and the like. By bonding via a conductive bonding member made of a conductive material, each electrode of the semiconductor element 3 is electrically connected to each metallized wiring conductor 5, and the semiconductor element 3 is fixed to the mounting portion 1b. In this example, the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected via the solder bumps 6, but the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected to another type of electric wire such as a bonding wire. May be connected by a dynamic connection means.

The metallized wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to an external electric circuit and a first electrode 7 and a second electrode 9, which will be described later.
A part thereof is led out to the lower surface of the outer periphery of the insulating base 1, and another part is electrically connected to the first electrode 7 and the second electrode 9. Then, each electrode of the semiconductor element 3 is electrically connected to the metallized wiring conductor 5 via a conductive bonding material 6 and the semiconductor element 3 is sealed with a resin sealing material 4. The semiconductor element 3 housed inside is electrically connected to the external electric circuit by joining the portion led out to the lower surface of the outer periphery of the insulating base 1 to the wiring conductor of the external electric circuit board via a conductive bonding material such as solder. Will be done.

The metallized wiring conductor 5 is made of metallized metal powder such as tungsten, molybdenum, copper, silver, etc., and is mixed with a metal powder such as tungsten by adding an appropriate organic binder, solvent, plasticizer, dispersant and the like. The metallized paste obtained as described above is applied to a ceramic green sheet for the insulating substrate 1 in a predetermined pattern by employing a conventionally known screen printing method, and is fired together with the green ceramic molded body for the insulating substrate 1 for insulation. A predetermined pattern is formed inside and on the surface of the base 1. In addition, in order to prevent the metallized wiring conductor 5 from being oxidized and corroded and to make the metallized wiring conductor 5 and a conductive bonding material such as solder good, the exposed surface of the metallized wiring conductor 5 is usually formed on the exposed surface. In this case, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially applied.

A frame 1c made of the same material as the insulating base 1 and having an outer shape substantially the same as that of the insulating base 1 and a circular inner periphery having a height of about 0.01 to 5 mm is provided on the outer periphery of the upper surface of the insulating base 1. As a result, a circular concave portion 1d having a substantially flat bottom surface is formed at the center of the upper surface. The concave portion 1d is for forming a closed space between the concave portion 1d and the insulating plate 2, and a first electrode 7 for forming a capacitance is attached to the bottom surface of the concave portion 1d. I have.

The first electrode 7 is for forming a capacitance for a pressure-sensitive element together with a second electrode 9 to be described later, and is formed, for example, in a substantially circular pattern. The first electrode 7 is provided with one of the metallized wiring conductors 5.
When the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5a via a conductive bonding material such as a solder bump 6, the electrode of the semiconductor element 3 and the first electrode 7 are electrically connected. It is to be connected.

The first electrode 7 is made of a metal powder of tungsten, molybdenum, copper, silver, or the like.
A metallized paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and a dispersant to a metal powder such as tungsten is mixed with an insulating substrate 1 by using a conventionally known screen printing method.
By printing and applying the ceramic green sheet for use with the green ceramic molded body for the insulating substrate 1 to form a substantially circular pattern on the bottom surface of the concave portion 1d of the insulating substrate 1. The exposed surface of the first electrode 7 is usually coated with a nickel plating layer having a thickness of about 1 to 10 μm in order to prevent the first electrode 7 from being oxidized and corroded.

On the upper surface of the frame 1c of the insulating base 1, a frame-shaped bonding metallization layer 8 is applied over substantially the entire surface thereof, and the bonding metallization layer 8 has a second electrode 9 on the lower surface. Is attached by brazing the second electrode 9 and the bonding metallized layer 8 via a brazing material such as a silver-copper brazing material. In this example,
Although the joining metallization layer 8 is provided over substantially the entire surface of the frame 1c, the metallization layer 8 may be provided so that the inner periphery substantially matches the inner periphery of the frame 1c and the outer periphery has a substantially circular or substantially octagonal shape.

One of the metallized wiring conductors 5b is connected to the bonding metallized layer 8 so that the electrodes of the semiconductor element 3 are connected to the metallized wiring conductor 5b via a conductive bonding material such as a solder bump 6. When they are electrically connected, the second electrode 9 connected to the bonding metallization layer 8 and the electrode of the semiconductor element 3 are electrically connected.

The bonding metallization layer 8 is made of a metal powder metallization such as tungsten, molybdenum, copper, silver or the like.
A metallized paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and a dispersant to a metal powder such as tungsten is mixed with an insulating substrate 1 by using a conventionally known screen printing method.
A ceramic green sheet for printing is applied and baked together with a green ceramic molded body for the insulating substrate 1 to form a predetermined frame-like pattern on the upper surface of the frame 1c of the insulating substrate 1. The exposed surface of the metallizing layer 8 for bonding is usually formed on the exposed surface of the metallizing layer 8 for bonding in order to prevent the metallizing layer 8 for bonding from being oxidized and corroded and to strengthen the bonding between the metallizing layer 8 for bonding and the brazing material. If the thickness is 1
A nickel plating layer of about 10 μm is applied.

As shown in FIG. 2, the insulating plate 2 attached to the upper surface of the insulating base 1 is made of aluminum oxide sintered body, aluminum nitride sintered body, mullite sintered body, silicon nitride A substantially octagonal flat plate having a thickness of 0.01 to 5 mm and made of a ceramic material such as a sintered body, a silicon carbide sintered body, or a glass-ceramic, and is bent toward the insulating substrate 1 in response to an external pressure. Functions as a diaphragm.

If the thickness of the insulating plate 2 is less than 0.01 mm, the mechanical strength of the insulating plate 2 is small, and there is a great risk that the insulating plate 2 will be broken when a large external pressure is applied thereto. On the other hand, if it exceeds 5 mm, it becomes difficult to bend under a small pressure, and it becomes unsuitable as a diaphragm for pressure detection. Therefore, the thickness of the insulating plate 2 is preferably in the range of 0.01 to 5 mm.

If the insulating plate 2 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, and a plastic suitable for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A ceramic green sheet is obtained by adding and mixing a dispersing agent and a dispersing agent to form a slurry, and forming this into a sheet by employing a well-known doctor blade method. Thereafter, the ceramic green sheet is appropriately punched. By processing and cutting, a green ceramic molded body for the insulating plate 2 is obtained, and this green ceramic molded body is
It is manufactured by firing at a temperature of 00 ° C. In this case, since the insulating plate 2 has a substantially octagonal flat plate shape, as shown in a plan view in FIG. 3, a large number of insulating substrates 2 are formed by firing a ceramic green sheet for the insulating plate 2. The board 2 is formed by arranging vertically and horizontally and integrally.
By dividing 11 for each insulating plate 2, a large number can be manufactured simultaneously and intensively. Therefore, for example, as compared with the case where the insulating plate 2 is formed in a circular flat plate shape, the manufacturing thereof is extremely easy and the manufacturing can be performed efficiently. The mother substrate 11 can be divided by forming division grooves 12 on the upper and lower surfaces of the mother substrate 11 in advance, and dividing the mother substrate 11 for each insulating plate 2 along the division grooves 12. Good.

On the lower surface of the insulating plate 2, a second electrode 9 for forming a capacitance is attached over substantially the entire surface. The second electrode 9 functions as an electrode for forming a capacitance for a pressure-sensitive element together with the above-described first electrode 7, and serves as a bonding base metal layer for bonding the insulating plate 2 to the insulating base 1. Function.

The second electrode 9 is made of a metal powder of tungsten, molybdenum, copper, silver or the like.
A metallized paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and a dispersant to a metal powder such as tungsten is mixed with a predetermined pattern on a ceramic green sheet for the insulating plate 2 by using a conventionally known screen printing method. Is formed on the entire surface of the lower surface of the insulating plate 2 by sintering it with a green ceramic molded body for the insulating plate 2.

The second electrode 9 and the metallizing layer 8 for bonding are bonded via a brazing material such as a silver-copper brazing material, so that the upper surface of the insulating base 1 and the lower surface of the insulating plate 2 are sealed. A space is formed, and the bonding metallization layer 8 and the second electrode 9 are electrically connected.

At this time, the first electrode 7 and the second electrode 9
The space between the insulating base 1 and the insulating plate 2 is opposed to each other with a space formed therebetween. The areas of the first electrode 7 and the second electrode 9 and the first electrode 7 and the second electrode 9 A predetermined capacitance is formed in accordance with the distance between. When an external pressure is applied to the upper surface of the insulating plate 2, the insulating plate 2 bends toward the insulating base 1 according to the pressure, and the distance between the first electrode 7 and the second electrode 9 changes. Since the capacitance between the first electrode 7 and the second electrode 9 changes, it functions as a pressure-sensitive element that detects a change in external pressure as a change in capacitance.
Then, the change of the capacitance is transmitted to the semiconductor element 3 housed in the recess 1a via the metallized wiring conductors 5a and 5b, and the magnitude of the external pressure is known by performing arithmetic processing on the semiconductor element 3. be able to.

As described above, according to the pressure sensing device package of the present invention, the first electrode for forming the capacitance is provided on the other main surface of the insulating base 1 on which the semiconductor element 3 is mounted on one main surface. And an insulating plate 2 having an inner surface facing the first electrode 7 and having a second electrode 9 for forming a capacitance in a flexible state so as to form a closed space between the insulating plate 2 and the insulating substrate 1. Because of the joining, the container accommodating the semiconductor element 3 and the pressure-sensitive element are integrated, and as a result, the size of the pressure detection device can be reduced. Further, since the first electrode 7 and the second electrode 9 for forming the capacitance are connected to the semiconductor element 3 via the metallized wiring conductors 5a and 5b provided on the insulating base 1, the first electrode 7 and the second electrode 9 are formed. The electrode 9 can be connected to the semiconductor element 3 over a short distance, and as a result, an unnecessary capacitance generated between these metallized wiring conductors 5a and 5b is reduced to provide a highly sensitive pressure detecting device. Can be.

When the distance between the first electrode 7 and the second electrode 9 is less than 0.01 mm at 1 atm, when a large pressure is applied to the insulating plate 2, the first electrode 7 and the second electrode 9 There is a danger that the pressure cannot be detected due to contact with the electrode. On the other hand, if the distance exceeds 5 mm, the capacitance formed between the first electrode 7 and the second electrode 9 becomes small. , The sensitivity of detecting pressure tends to be low.
Therefore, the distance between the first electrode 7 and the second electrode 9 is preferably in the range of 0.01 to 5 mm at 1 atm.

The insulating plate 2 is placed on the frame 1c of the insulating base 1.
In order to bond the metallized layer 8 and the second metallized layer 9 on the frame 1 c, a nickel plating layer having a thickness of 1 to 10 μm is previously applied to the surfaces thereof. 10-200μ thickness between two electrodes 9
The insulating base 1 and the insulating plate 2 are overlapped with each other with a brazing material foil made of silver-copper brazing having a thickness of about m.
A method is adopted in which the brazing material foil is melted by heating to a temperature of about 850 ° C., and the joining metallized layer 8 and the outer peripheral portion of the second electrode 9 are brazed.

At this time, since the insulating plate 2 is substantially octagonal, the difference in the width of brazing between the center and the corner of each side of the insulating plate 2 is small, so that the second electrode is provided on the upper surface of the frame 1c. When brazing is performed, the thickness of the brazing material becomes substantially uniform without the brazing material concentrating largely on a part. Therefore, according to the pressure sensor element housing package of the present invention, the capacitance formed between the first electrode 7 and the second electrode 9 does not vary greatly.

Thus, according to the above-described package for a pressure detecting device, the semiconductor element 3 is mounted on the mounting portion 1b, and each electrode of the semiconductor element 3 and the metallized wiring conductor 5 are electrically connected. By sealing the element 3, a pressure detecting device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure without variation.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, as shown in the sectional view of FIG. 4, a substantially circular frame-shaped insulating layer 10 is applied to the surface between the brazed outer peripheral portion of the second electrode 9 and the central portion facing the first electrode 7. May be. Such an insulating layer
By providing 10, it is possible to prevent the brazing material joining the second electrode 9 and the joining metallized layer 8 from flowing out to the center of the second electrode. In this case, the variation in the capacitance formed on the substrate can be further reduced. Such an insulating layer 10 may be formed of substantially the same material as that of the insulating plate 2. The insulating layer 10 is applied to the surface of the metallized paste for the second electrode 9 applied to the green ceramic molded body for the insulating plate 2. An insulating paste for the insulating plate 2 is printed and applied in a predetermined pattern by a known screen printing method.
Formed by firing together with a metallizing paste for use. In the case where the insulating layer 10 for preventing the outflow of the brazing material is provided, if the thickness of the insulating layer 10 is less than 5 μm, when the outer peripheral portion of the second electrode 9 is brazed to the upper surface of the frame 1c, the brazing material is It may not be possible to prevent the outflow to the central part of the second electrode 9. On the other hand, if it exceeds 500 μm, there is a possibility that good bending of the insulating plate 2 may be hindered. Therefore, the thickness of the insulating layer 10 is preferably in the range of 5 to 500 μm. When the width of the insulating layer 10 is less than 0.1 mm, when the outer peripheral portion of the second electrode 9 is brazed to the upper surface of the frame 1c, the brazing material is prevented from flowing to the central portion of the second electrode. May not be possible. Therefore, the width of the insulating layer 10 is preferably 0.1 mm or more.

Further, in the above-described embodiment, the insulating plate 2 is a regular octagon, but the insulating plate 2 is not limited to a regular octagon. For example, as shown in a plan view of FIG. Every other side is depressed by about 0.1 to 0.5 mm in a direction perpendicular to the adjacent side, and may be substantially octagonal as a whole. In this case, an acute angle of less than 90 ° is formed at each corner of the insulating plate 2 even if the position of the division groove 12 is slightly shifted when the mother substrate 11 for the insulating plate 2 is divided to obtain the insulating plate 2. Since the insulating plate 2 is not broken, chipping of the insulating plate 2 hardly occurs.

[0035]

As described above, according to the pressure detecting device package of the present invention, the other main body of the substantially square plate-shaped insulating base having the mounting portion on which the semiconductor element is mounted on one main surface. A first electrode for forming a capacitance is provided at the center of the surface, and a substantially octagonal plate-shaped insulating plate having a second electrode for forming a capacitance opposed to the first electrode is placed between the insulating base and the insulating plate. The pressure sensing element is formed integrally with the package accommodating the semiconductor element since the pressure sensing element is integrally formed in the package accommodating the semiconductor element, so that the pressure detection device can be downsized. By shortening the wiring connecting the pressure detecting electrode and the semiconductor element, unnecessary capacitance generated between these wirings can be reduced. Furthermore, since the insulating plate has a substantially octagonal flat plate shape, the difference in the width of brazing between the central portion and the corners of each side of the insulating plate is small, so when brazing the second electrode to the upper surface of the frame, Therefore, the thickness of the brazing material becomes substantially uniform, and as a result, there is no variation in the capacitance formed between the first electrode and the second electrode, and the external pressure can be accurately detected without variation. Can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a pressure detecting device according to the present invention.

FIG. 2 is a top view of the pressure detection device package shown in FIG.

FIG. 3 is a plan view for explaining a method of manufacturing the insulating plate 2 of the package for a pressure detecting device shown in FIGS. 1 and 2.

FIG. 4 is a cross-sectional view showing another example of the embodiment of the pressure detection device package of the present invention.

FIG. 5 is a plan view showing an insulating plate 2 in still another example of the embodiment of the pressure detection device package according to the present invention.

FIG. 6 is a sectional view showing a conventional pressure detecting device.

[Explanation of symbols]

 1 ... insulating base 1c ... frame 2 ... insulating plate 3 ... semiconductor element 7 ... first electrode 9 ... second electrode

Claims (1)

[Claims] 1. A substantially square-plate-shaped insulating base having a mounting portion on one of its main surfaces on which a semiconductor element is mounted, and a first electrode for forming a capacitance formed on the center of the other main surface. And a frame body whose inner periphery is joined to the outer periphery of the other main surface of the insulating base so as to surround the first electrode and whose outer periphery is circular and whose outer periphery is substantially square, A second electrode for forming a capacitance, which is opposed to the first electrode and whose outer peripheral portion is brazed on the frame, and is in a flexible state so as to form a closed space between the second electrode and the insulating base; And a substantially octagonal flat insulating plate attached to the frame.