JP2002128586A5 - - Google Patents

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Publication number
JP2002128586A5
JP2002128586A5 JP2000318723A JP2000318723A JP2002128586A5 JP 2002128586 A5 JP2002128586 A5 JP 2002128586A5 JP 2000318723 A JP2000318723 A JP 2000318723A JP 2000318723 A JP2000318723 A JP 2000318723A JP 2002128586 A5 JP2002128586 A5 JP 2002128586A5
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JP
Japan
Prior art keywords
reaction vessel
group iii
nitrogen source
temperature
alkali metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000318723A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002128586A (ja
JP3966682B2 (ja
Filing date
Publication date
Priority claimed from JP2000318723A external-priority patent/JP3966682B2/ja
Priority to JP2000318723A priority Critical patent/JP3966682B2/ja
Application filed filed Critical
Priority to US09/981,848 priority patent/US6780239B2/en
Publication of JP2002128586A publication Critical patent/JP2002128586A/ja
Priority to US10/878,904 priority patent/US20050026318A1/en
Publication of JP2002128586A5 publication Critical patent/JP2002128586A5/ja
Publication of JP3966682B2 publication Critical patent/JP3966682B2/ja
Application granted granted Critical
Priority to US12/139,230 priority patent/US8562737B2/en
Priority to US13/966,801 priority patent/US20130330264A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000318723A 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法 Expired - Lifetime JP3966682B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000318723A JP3966682B2 (ja) 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法
US09/981,848 US6780239B2 (en) 2000-10-19 2001-10-16 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US10/878,904 US20050026318A1 (en) 2000-10-19 2004-06-28 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US12/139,230 US8562737B2 (en) 2000-10-19 2008-06-13 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device
US13/966,801 US20130330264A1 (en) 2000-10-19 2013-08-14 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000318723A JP3966682B2 (ja) 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007074497A Division JP4768656B2 (ja) 2007-03-22 2007-03-22 結晶成長装置

Publications (3)

Publication Number Publication Date
JP2002128586A JP2002128586A (ja) 2002-05-09
JP2002128586A5 true JP2002128586A5 (OSRAM) 2006-06-29
JP3966682B2 JP3966682B2 (ja) 2007-08-29

Family

ID=18797304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000318723A Expired - Lifetime JP3966682B2 (ja) 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法

Country Status (1)

Country Link
JP (1) JP3966682B2 (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780239B2 (en) 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP4560287B2 (ja) * 2002-11-08 2010-10-13 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
US8888912B2 (en) 2005-05-12 2014-11-18 Ricoh Company, Ltd. Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
JP4192220B2 (ja) 2005-08-10 2008-12-10 株式会社リコー 結晶成長装置および製造方法
US8101020B2 (en) 2005-10-14 2012-01-24 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP4732146B2 (ja) * 2005-11-21 2011-07-27 株式会社リコー 結晶成長装置および製造方法
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP5129527B2 (ja) 2006-10-02 2013-01-30 株式会社リコー 結晶製造方法及び基板製造方法
JP4768656B2 (ja) * 2007-03-22 2011-09-07 株式会社リコー 結晶成長装置
JP5108641B2 (ja) * 2008-06-12 2012-12-26 住友電気工業株式会社 ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子
JP5278456B2 (ja) * 2011-01-28 2013-09-04 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法

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