JP2002110551A - 半導体薄膜の形成方法及び装置 - Google Patents

半導体薄膜の形成方法及び装置

Info

Publication number
JP2002110551A
JP2002110551A JP2000294738A JP2000294738A JP2002110551A JP 2002110551 A JP2002110551 A JP 2002110551A JP 2000294738 A JP2000294738 A JP 2000294738A JP 2000294738 A JP2000294738 A JP 2000294738A JP 2002110551 A JP2002110551 A JP 2002110551A
Authority
JP
Japan
Prior art keywords
thin film
substrate
hydrogen
semiconductor thin
hydrogen radicals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000294738A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110551A5 (https=
Inventor
Kenzo Hiraoka
賢三 平岡
Chiharu Miyata
千治 宮田
Toshiyuki Takamatsu
利行 高松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YAMANASHIKEN SHOKOKAI RENGOKAI
Original Assignee
YAMANASHIKEN SHOKOKAI RENGOKAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YAMANASHIKEN SHOKOKAI RENGOKAI filed Critical YAMANASHIKEN SHOKOKAI RENGOKAI
Priority to JP2000294738A priority Critical patent/JP2002110551A/ja
Priority to EP01106350A priority patent/EP1193325A1/en
Priority to TW090106225A priority patent/TW569309B/zh
Priority to US09/811,785 priority patent/US6472299B2/en
Priority to KR1020010014658A priority patent/KR100787285B1/ko
Publication of JP2002110551A publication Critical patent/JP2002110551A/ja
Publication of JP2002110551A5 publication Critical patent/JP2002110551A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP2000294738A 2000-09-27 2000-09-27 半導体薄膜の形成方法及び装置 Pending JP2002110551A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000294738A JP2002110551A (ja) 2000-09-27 2000-09-27 半導体薄膜の形成方法及び装置
EP01106350A EP1193325A1 (en) 2000-09-27 2001-03-16 Process and apparatus for forming semiconductor thin film
TW090106225A TW569309B (en) 2000-09-27 2001-03-16 Process and apparatus for forming semiconductor thin film
US09/811,785 US6472299B2 (en) 2000-09-27 2001-03-20 Method and apparatus for treating a substrate with hydrogen radicals at a temperature of less than 40 K
KR1020010014658A KR100787285B1 (ko) 2000-09-27 2001-03-21 반도체 박막을 형성하는 공정 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000294738A JP2002110551A (ja) 2000-09-27 2000-09-27 半導体薄膜の形成方法及び装置

Publications (2)

Publication Number Publication Date
JP2002110551A true JP2002110551A (ja) 2002-04-12
JP2002110551A5 JP2002110551A5 (https=) 2007-11-01

Family

ID=18777278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000294738A Pending JP2002110551A (ja) 2000-09-27 2000-09-27 半導体薄膜の形成方法及び装置

Country Status (5)

Country Link
US (1) US6472299B2 (https=)
EP (1) EP1193325A1 (https=)
JP (1) JP2002110551A (https=)
KR (1) KR100787285B1 (https=)
TW (1) TW569309B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083915A1 (en) * 2002-03-29 2003-10-09 Miyatsu Co., Ltd. Method for forming thin film

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998537B2 (en) * 2002-03-01 2011-08-16 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
KR20040007963A (ko) * 2002-07-15 2004-01-28 삼성전자주식회사 단원자층 증착 반응장치
US7197863B1 (en) 2005-07-13 2007-04-03 Scag Power Equipment, Inc. Lawnmower cutter deck with side-to-side deck leveler
NO328202B1 (no) * 2006-02-21 2010-01-04 Elkem Solar As Fremgangsmåte og apparatur for fremstilling av silan
US8648336B2 (en) 2009-03-03 2014-02-11 The University Of Western Ontario Method for fabrication of layered heterojunction polymeric devices
WO2011046025A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US20150167160A1 (en) * 2013-12-16 2015-06-18 Applied Materials, Inc. Enabling radical-based deposition of dielectric films

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308910A (ja) * 1987-06-11 1988-12-16 Nikon Corp エネルギ−線照射による薄膜の製造方法及びそれに使用される装置
JPH06151331A (ja) * 1992-11-12 1994-05-31 Matsushita Electric Ind Co Ltd 半導体ダイヤモンドの形成方法及び装置
JPH06291047A (ja) * 1992-07-24 1994-10-18 Nissin Electric Co Ltd シリコン膜の形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126772A (ja) * 1984-07-16 1986-02-06 Canon Inc 堆積膜形成方法
JP3008451B2 (ja) * 1990-07-06 2000-02-14 ソニー株式会社 シリコン系被エッチング材のエッチング方法
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
US5264394A (en) * 1991-05-22 1993-11-23 Associated Universities, Inc. Method for producing high quality oxide films on substrates
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
KR960006958B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알 장비
RU2100477C1 (ru) * 1994-10-18 1997-12-27 Равель Газизович Шарафутдинов Способ осаждения пленок гидрогенизированного кремния
US6114032A (en) * 1998-04-10 2000-09-05 The University Of North Texas Films for use in microelectronic devices and methods of producing same
US6210541B1 (en) * 1998-04-28 2001-04-03 International Business Machines Corporation Process and apparatus for cold copper deposition to enhance copper plating fill

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308910A (ja) * 1987-06-11 1988-12-16 Nikon Corp エネルギ−線照射による薄膜の製造方法及びそれに使用される装置
JPH06291047A (ja) * 1992-07-24 1994-10-18 Nissin Electric Co Ltd シリコン膜の形成方法
JPH06151331A (ja) * 1992-11-12 1994-05-31 Matsushita Electric Ind Co Ltd 半導体ダイヤモンドの形成方法及び装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083915A1 (en) * 2002-03-29 2003-10-09 Miyatsu Co., Ltd. Method for forming thin film

Also Published As

Publication number Publication date
KR20020025004A (ko) 2002-04-03
KR100787285B1 (ko) 2007-12-20
EP1193325A1 (en) 2002-04-03
TW569309B (en) 2004-01-01
US20020037634A1 (en) 2002-03-28
US6472299B2 (en) 2002-10-29

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