TW569309B - Process and apparatus for forming semiconductor thin film - Google Patents

Process and apparatus for forming semiconductor thin film Download PDF

Info

Publication number
TW569309B
TW569309B TW090106225A TW90106225A TW569309B TW 569309 B TW569309 B TW 569309B TW 090106225 A TW090106225 A TW 090106225A TW 90106225 A TW90106225 A TW 90106225A TW 569309 B TW569309 B TW 569309B
Authority
TW
Taiwan
Prior art keywords
film
substrate
hydrogen
semiconductor
temperature
Prior art date
Application number
TW090106225A
Other languages
English (en)
Chinese (zh)
Inventor
Kenzo Hiraoka
Chiharu Miyata
Toshiyuki Takamatsu
Original Assignee
Yamanashi Prefectural Federati
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamanashi Prefectural Federati filed Critical Yamanashi Prefectural Federati
Application granted granted Critical
Publication of TW569309B publication Critical patent/TW569309B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
TW090106225A 2000-09-27 2001-03-16 Process and apparatus for forming semiconductor thin film TW569309B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000294738A JP2002110551A (ja) 2000-09-27 2000-09-27 半導体薄膜の形成方法及び装置

Publications (1)

Publication Number Publication Date
TW569309B true TW569309B (en) 2004-01-01

Family

ID=18777278

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090106225A TW569309B (en) 2000-09-27 2001-03-16 Process and apparatus for forming semiconductor thin film

Country Status (5)

Country Link
US (1) US6472299B2 (https=)
EP (1) EP1193325A1 (https=)
JP (1) JP2002110551A (https=)
KR (1) KR100787285B1 (https=)
TW (1) TW569309B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998537B2 (en) * 2002-03-01 2011-08-16 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
AU2002241336A1 (en) * 2002-03-29 2003-10-13 Miyatsu Co., Ltd. Method for forming thin film
KR20040007963A (ko) * 2002-07-15 2004-01-28 삼성전자주식회사 단원자층 증착 반응장치
US7197863B1 (en) 2005-07-13 2007-04-03 Scag Power Equipment, Inc. Lawnmower cutter deck with side-to-side deck leveler
NO328202B1 (no) * 2006-02-21 2010-01-04 Elkem Solar As Fremgangsmåte og apparatur for fremstilling av silan
US8648336B2 (en) 2009-03-03 2014-02-11 The University Of Western Ontario Method for fabrication of layered heterojunction polymeric devices
WO2011046025A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US20150167160A1 (en) * 2013-12-16 2015-06-18 Applied Materials, Inc. Enabling radical-based deposition of dielectric films

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126772A (ja) * 1984-07-16 1986-02-06 Canon Inc 堆積膜形成方法
JPS63308910A (ja) * 1987-06-11 1988-12-16 Nikon Corp エネルギ−線照射による薄膜の製造方法及びそれに使用される装置
JP3008451B2 (ja) * 1990-07-06 2000-02-14 ソニー株式会社 シリコン系被エッチング材のエッチング方法
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
US5264394A (en) * 1991-05-22 1993-11-23 Associated Universities, Inc. Method for producing high quality oxide films on substrates
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2500412B2 (ja) * 1992-07-24 1996-05-29 日新電機株式会社 シリコン膜の形成方法
JP3165536B2 (ja) * 1992-11-12 2001-05-14 松下電器産業株式会社 半導体ダイヤモンドの形成方法及び装置
KR960006958B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알 장비
RU2100477C1 (ru) * 1994-10-18 1997-12-27 Равель Газизович Шарафутдинов Способ осаждения пленок гидрогенизированного кремния
US6114032A (en) * 1998-04-10 2000-09-05 The University Of North Texas Films for use in microelectronic devices and methods of producing same
US6210541B1 (en) * 1998-04-28 2001-04-03 International Business Machines Corporation Process and apparatus for cold copper deposition to enhance copper plating fill

Also Published As

Publication number Publication date
KR20020025004A (ko) 2002-04-03
KR100787285B1 (ko) 2007-12-20
EP1193325A1 (en) 2002-04-03
JP2002110551A (ja) 2002-04-12
US20020037634A1 (en) 2002-03-28
US6472299B2 (en) 2002-10-29

Similar Documents

Publication Publication Date Title
JP4833268B2 (ja) 低誘電率および超低誘電率のＳｉＣＯＨ誘電体膜の形成方法
TWI250222B (en) Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US20100247801A1 (en) Method of Production of Graphene
Jhansirani et al. Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications
CN103210479A (zh) 用以降低超低k介电薄膜的黏着层厚度并提高抗破坏性的工艺
JP4881153B2 (ja) 水素化シリコンオキシカーバイド膜の生成方法。
WO2008096884A1 (ja) ｎ型導電性窒化アルミニウム半導体結晶及びその製造方法
Zhang et al. The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine‐containing species
US7772133B2 (en) Method and equipment for forming oxide film
Wrobel et al. Oligomerization and polymerization steps in remote plasma chemical vapor deposition of silicon− carbon and silica films from organosilicon sources
TW569309B (en) Process and apparatus for forming semiconductor thin film
JP4849863B2 (ja) 酸化膜形成方法
US20210388498A1 (en) Atomic layer deposition and vapor deposition reactor with in-chamber microplasma source
JP4136614B2 (ja) 超撥水膜の製造方法
Wrobel et al. Silicon oxycarbide films produced by remote microwave hydrogen plasma CVD using a tetramethyldisiloxane precursor: Growth kinetics, structure, surface morphology, and properties
JP2008187187A (ja) 低誘電率膜およびその成膜方法並びにその膜を用いた電子装置
TWI448576B (zh) 低介電材料及其薄膜之製備方法
JP2010225792A (ja) 成膜装置及び成膜方法
JP2023527976A (ja) Ｎ－アルキル置換ペルヒドリドシクロトリシラザン類によるシリコン系薄膜
Hsiao et al. Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition
Sasaoka et al. Self-limiting adsorption of thermally cracked SiCl2H2 on Si surfaces
Kaneko et al. The growth process and optical emission spectroscopy of amorphous silicon carbide films from methyltrichlorosilane by rf plasma enhanced CVD
Kinashi et al. Synchrotron radiation induced reactions of a condensed layer of silicon alkoxide on Si
Ermakova et al. Amorphous SiCxNy: H Thin Films Produced with Various Nitrogen Sources: A Comparative Study
JP6944699B2 (ja) 六方晶系窒化ホウ素膜の製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees