JP2002110544A5 - - Google Patents

Download PDF

Info

Publication number
JP2002110544A5
JP2002110544A5 JP2001241661A JP2001241661A JP2002110544A5 JP 2002110544 A5 JP2002110544 A5 JP 2002110544A5 JP 2001241661 A JP2001241661 A JP 2001241661A JP 2001241661 A JP2001241661 A JP 2001241661A JP 2002110544 A5 JP2002110544 A5 JP 2002110544A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001241661A
Other versions
JP2002110544A (ja
Filing date
Publication date
Priority claimed from US09/637,325 external-priority patent/US6451631B1/en
Application filed filed Critical
Publication of JP2002110544A publication Critical patent/JP2002110544A/ja
Publication of JP2002110544A5 publication Critical patent/JP2002110544A5/ja
Pending legal-status Critical Current

Links

JP2001241661A 2000-08-10 2001-08-09 レーザアニールによる薄膜結晶成長 Pending JP2002110544A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US637325 1991-01-03
US09/637,325 US6451631B1 (en) 2000-08-10 2000-08-10 Thin film crystal growth by laser annealing

Publications (2)

Publication Number Publication Date
JP2002110544A JP2002110544A (ja) 2002-04-12
JP2002110544A5 true JP2002110544A5 (ja) 2008-03-06

Family

ID=24555457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001241661A Pending JP2002110544A (ja) 2000-08-10 2001-08-09 レーザアニールによる薄膜結晶成長

Country Status (4)

Country Link
US (2) US6451631B1 (ja)
JP (1) JP2002110544A (ja)
KR (1) KR100844242B1 (ja)
TW (1) TW548748B (ja)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
TW494444B (en) 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
KR100672628B1 (ko) * 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US6645454B2 (en) * 2001-06-28 2003-11-11 Sharp Laboratories Of America, Inc. System and method for regulating lateral growth in laser irradiated silicon films
JP2003059858A (ja) * 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
EP1417695B1 (en) * 2001-08-11 2008-01-23 The University Court of the University of Dundee Field emission backplate
US6590409B1 (en) * 2001-12-13 2003-07-08 Lsi Logic Corporation Systems and methods for package defect detection
KR100514179B1 (ko) * 2002-11-19 2005-09-13 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 사용하는 유기 전계 발광 소자
US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
KR100493156B1 (ko) * 2002-06-05 2005-06-03 삼성전자주식회사 나노입자를 이용한 비정질 실리콘의 결정화 방법
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7332431B2 (en) * 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100501700B1 (ko) 2002-12-16 2005-07-18 삼성에스디아이 주식회사 엘디디/오프셋 구조를 구비하고 있는 박막 트랜지스터
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
US7341928B2 (en) 2003-02-19 2008-03-11 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
JP2004266022A (ja) * 2003-02-28 2004-09-24 Sharp Corp 半導体薄膜の結晶成長装置および結晶成長方法
DE602004020538D1 (de) * 2003-02-28 2009-05-28 Semiconductor Energy Lab Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
TWI366859B (en) 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
KR100971951B1 (ko) * 2003-09-17 2010-07-23 엘지디스플레이 주식회사 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
US7018468B2 (en) * 2003-11-13 2006-03-28 Sharp Laboratories Of America, Inc. Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
US7858450B2 (en) * 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
KR101041066B1 (ko) * 2004-02-13 2011-06-13 삼성전자주식회사 실리콘 결정화 방법, 이를 이용한 실리콘 결정화 장치,이를 이용한 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 이용한 표시장치
KR100603330B1 (ko) * 2004-02-16 2006-07-20 삼성에스디아이 주식회사 레이저 결정화 장치
TWI304897B (en) * 2004-11-15 2009-01-01 Au Optronics Corp Method of manufacturing a polysilicon layer and a mask used thereof
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US7674149B2 (en) * 2005-04-21 2010-03-09 Industrial Technology Research Institute Method for fabricating field emitters by using laser-induced re-crystallization
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8753990B2 (en) * 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
WO2008127807A1 (en) * 2007-03-09 2008-10-23 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8415670B2 (en) 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
GB0722120D0 (en) * 2007-11-10 2007-12-19 Quantum Filament Technologies Improved field emission backplate
JP5443377B2 (ja) 2007-11-21 2014-03-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エピタキシャルに配向された厚膜を調製するための調製システムおよび方法
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
WO2009111340A2 (en) 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US20100102323A1 (en) * 2008-10-24 2010-04-29 Sposili Robert S Directionally Annealed Silicon Film Having a (100)-Normal Crystallographical Orientation
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8247317B2 (en) * 2009-09-16 2012-08-21 Applied Materials, Inc. Methods of solid phase recrystallization of thin film using pulse train annealing method
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
TWI528418B (zh) 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
US20120074117A1 (en) * 2010-09-23 2012-03-29 Varian Semiconductor Equipment Associates, Inc. In-situ heating and co-annealing for laser annealed junction formation
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
TWI624862B (zh) 2012-06-11 2018-05-21 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
US9413137B2 (en) 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
US10226837B2 (en) 2013-03-15 2019-03-12 Nlight, Inc. Thermal processing with line beams
CN104282539A (zh) * 2013-07-04 2015-01-14 上海和辉光电有限公司 一种多晶硅制作方法
DE102013224693A1 (de) * 2013-12-02 2015-06-03 Eos Gmbh Electro Optical Systems Verfahren zur beschleunigten Herstellung von Objekten mittels generativer Fertigung
TW201528379A (zh) * 2013-12-20 2015-07-16 Applied Materials Inc 雙波長退火方法與設備
EP2899749A1 (en) * 2014-01-24 2015-07-29 Excico France Method for forming polycrystalline silicon by laser irradiation
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing
US9106887B1 (en) * 2014-03-13 2015-08-11 Wowza Media Systems, LLC Adjusting encoding parameters at a mobile device based on a change in available network bandwidth
KR102235601B1 (ko) 2014-05-29 2021-04-05 삼성디스플레이 주식회사 박막트랜지스터의 활성층 결정화 장치 및 그것을 이용한 결정화 방법
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
US10466494B2 (en) 2015-12-18 2019-11-05 Nlight, Inc. Reverse interleaving for laser line generators
GB201614342D0 (en) * 2016-08-22 2016-10-05 M-Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001706B1 (ko) * 1993-05-27 1996-02-03 삼성전자주식회사 다결정 실리콘의 제조방법 및 장치
JP3388042B2 (ja) * 1994-11-18 2003-03-17 三菱電機株式会社 レーザアニーリング方法
JPH08186268A (ja) * 1994-12-28 1996-07-16 Sony Corp 薄膜半導体装置の製造方法
JPH09213651A (ja) * 1996-02-06 1997-08-15 Sharp Corp 半導体薄膜の製造装置および半導体薄膜の製造方法
WO1997045827A1 (en) 1996-05-28 1997-12-04 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
KR100234895B1 (ko) * 1997-05-12 1999-12-15 구본준 비정질 실리콘의 결정화 방법
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
KR100327087B1 (ko) * 1999-06-28 2002-03-13 구본준, 론 위라하디락사 레이저 어닐링 방법
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置

Similar Documents

Publication Publication Date Title
BE2022C531I2 (ja)
BE2022C502I2 (ja)
BE2022C547I2 (ja)
BE2017C056I2 (ja)
BE2017C051I2 (ja)
BE2017C032I2 (ja)
BE2016C051I2 (ja)
BE2015C046I2 (ja)
BE2014C052I2 (ja)
BE2014C036I2 (ja)
BE2014C026I2 (ja)
BE2014C004I2 (ja)
BE2017C050I2 (ja)
BE2011C034I2 (ja)
BE2007C047I2 (ja)
JP2002110544A5 (ja)
BRPI0209186B1 (ja)
BE2014C008I2 (ja)
BRPI0204884B1 (ja)
CH1379220H1 (ja)
BE2016C021I2 (ja)
BE2017C059I2 (ja)
JP2002246333A5 (ja)
BRPI0101486B8 (ja)
BE2012C051I2 (ja)