JP2002094064A - 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 - Google Patents
薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置Info
- Publication number
- JP2002094064A JP2002094064A JP2000274620A JP2000274620A JP2002094064A JP 2002094064 A JP2002094064 A JP 2002094064A JP 2000274620 A JP2000274620 A JP 2000274620A JP 2000274620 A JP2000274620 A JP 2000274620A JP 2002094064 A JP2002094064 A JP 2002094064A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- film transistor
- electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
Landscapes
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000274620A JP2002094064A (ja) | 2000-09-11 | 2000-09-11 | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000274620A JP2002094064A (ja) | 2000-09-11 | 2000-09-11 | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002094064A true JP2002094064A (ja) | 2002-03-29 |
| JP2002094064A5 JP2002094064A5 (enExample) | 2005-09-08 |
Family
ID=18760353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000274620A Pending JP2002094064A (ja) | 2000-09-11 | 2000-09-11 | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002094064A (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100412121B1 (ko) * | 2001-03-31 | 2003-12-31 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터의 제조방법 |
| JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2008009372A (ja) * | 2006-06-29 | 2008-01-17 | Lg Philips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| JP2008015460A (ja) * | 2006-06-30 | 2008-01-24 | Lg Philips Lcd Co Ltd | 液晶表示装置の製造方法及び液晶表示装置 |
| JP2008015455A (ja) * | 2006-06-30 | 2008-01-24 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| JP2009054836A (ja) * | 2007-08-28 | 2009-03-12 | Mitsubishi Electric Corp | Tft基板及びその製造方法 |
| JP2009271527A (ja) * | 2008-05-06 | 2009-11-19 | Samsung Mobile Display Co Ltd | 平板表示装置用の薄膜トランジスタアレイ基板、それを備える有機発光表示装置、及びそれらの製造方法 |
| JP2010098280A (ja) * | 2008-02-22 | 2010-04-30 | Toppan Printing Co Ltd | 透明薄膜トランジスタ及び画像表示装置 |
| KR101338106B1 (ko) * | 2006-06-30 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| KR101338108B1 (ko) * | 2006-12-14 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255830A (ja) * | 1988-04-05 | 1989-10-12 | Nec Corp | 液晶表示装置の配線の製造方法と液晶表示装置の配線 |
| JPH0234970A (ja) * | 1988-07-25 | 1990-02-05 | Sony Corp | 電界効果型薄膜トランジスタ |
| JPH02245739A (ja) * | 1989-03-20 | 1990-10-01 | Hitachi Ltd | 液晶表示装置 |
| JPH03129326A (ja) * | 1989-10-13 | 1991-06-03 | Hitachi Ltd | 表示装置 |
| JPH03216996A (ja) * | 1990-01-19 | 1991-09-24 | Matsushita Electron Corp | 画像表示装置 |
| JPH04278928A (ja) * | 1991-03-07 | 1992-10-05 | Sharp Corp | アクティブマトリクス基板 |
| JPH053318A (ja) * | 1991-06-26 | 1993-01-08 | Stanley Electric Co Ltd | 薄膜トランジスタと薄膜トランジスタの製造方法 |
| JPH06169086A (ja) * | 1992-11-30 | 1994-06-14 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ |
| JPH0778992A (ja) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH07142735A (ja) * | 1993-11-12 | 1995-06-02 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JPH11281992A (ja) * | 1998-03-31 | 1999-10-15 | Sharp Corp | 液晶表示装置及びその製造方法 |
-
2000
- 2000-09-11 JP JP2000274620A patent/JP2002094064A/ja active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255830A (ja) * | 1988-04-05 | 1989-10-12 | Nec Corp | 液晶表示装置の配線の製造方法と液晶表示装置の配線 |
| JPH0234970A (ja) * | 1988-07-25 | 1990-02-05 | Sony Corp | 電界効果型薄膜トランジスタ |
| JPH02245739A (ja) * | 1989-03-20 | 1990-10-01 | Hitachi Ltd | 液晶表示装置 |
| JPH03129326A (ja) * | 1989-10-13 | 1991-06-03 | Hitachi Ltd | 表示装置 |
| JPH03216996A (ja) * | 1990-01-19 | 1991-09-24 | Matsushita Electron Corp | 画像表示装置 |
| JPH04278928A (ja) * | 1991-03-07 | 1992-10-05 | Sharp Corp | アクティブマトリクス基板 |
| JPH053318A (ja) * | 1991-06-26 | 1993-01-08 | Stanley Electric Co Ltd | 薄膜トランジスタと薄膜トランジスタの製造方法 |
| JPH06169086A (ja) * | 1992-11-30 | 1994-06-14 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ |
| JPH0778992A (ja) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH07142735A (ja) * | 1993-11-12 | 1995-06-02 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JPH11281992A (ja) * | 1998-03-31 | 1999-10-15 | Sharp Corp | 液晶表示装置及びその製造方法 |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100412121B1 (ko) * | 2001-03-31 | 2003-12-31 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터의 제조방법 |
| US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| US12189232B2 (en) | 2005-12-28 | 2025-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US11269214B2 (en) | 2005-12-28 | 2022-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10739637B2 (en) | 2005-12-28 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10444564B1 (en) | 2005-12-28 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US9703140B2 (en) | 2005-12-28 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2014115677A (ja) * | 2005-12-28 | 2014-06-26 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2008009372A (ja) * | 2006-06-29 | 2008-01-17 | Lg Philips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| JP2008015455A (ja) * | 2006-06-30 | 2008-01-24 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| KR101338106B1 (ko) * | 2006-06-30 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| KR101236726B1 (ko) | 2006-06-30 | 2013-02-25 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| JP2008015460A (ja) * | 2006-06-30 | 2008-01-24 | Lg Philips Lcd Co Ltd | 液晶表示装置の製造方法及び液晶表示装置 |
| KR101338108B1 (ko) * | 2006-12-14 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| JP2009054836A (ja) * | 2007-08-28 | 2009-03-12 | Mitsubishi Electric Corp | Tft基板及びその製造方法 |
| JP2010098280A (ja) * | 2008-02-22 | 2010-04-30 | Toppan Printing Co Ltd | 透明薄膜トランジスタ及び画像表示装置 |
| JP2009271527A (ja) * | 2008-05-06 | 2009-11-19 | Samsung Mobile Display Co Ltd | 平板表示装置用の薄膜トランジスタアレイ基板、それを備える有機発光表示装置、及びそれらの製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8785257B2 (en) | Array substrate for display device | |
| US7649583B2 (en) | Semiconductor structure and fabricating method thereof for liquid crystal display device | |
| US7824952B2 (en) | Display apparatus and method of manufacturing thereof | |
| US9087751B2 (en) | Array substrate for display device and method of fabricating the same | |
| US8329523B2 (en) | Array substrate for dislay device and method of fabricating the same | |
| US7833846B1 (en) | Array substrate and method of fabricating the same | |
| US7755708B2 (en) | Pixel structure for flat panel display | |
| CN102468232B (zh) | 制造阵列基板的方法 | |
| US8362526B2 (en) | Liquid crystal display device and fabricating method thereof | |
| US6395586B1 (en) | Method for fabricating high aperture ratio TFT's and devices formed | |
| JP2002134756A (ja) | 半導体装置およびその製造方法 | |
| US20080197356A1 (en) | Thin film transistor substrate and method of manufacturing the same | |
| US20100133541A1 (en) | Thin film transistor array substrate, its manufacturing method, and liquid crystal display device | |
| KR20020071059A (ko) | 2층구조의 소오스/드레인 전극을 갖는 박막 트랜지스터 및그의 제조방법과 이를 이용한 액티브 매트릭스형 표시소자및 그의 제조방법 | |
| US7973317B2 (en) | Array substrate for liquid crystal display and method for fabricating the same | |
| US6580127B1 (en) | High performance thin film transistor and active matrix process for flat panel displays | |
| KR20010019665A (ko) | 탑 게이트형 폴리실리콘 박막트랜지스터 제조방법 | |
| JP2002094064A (ja) | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 | |
| KR20050001937A (ko) | 액정표시패널 및 그 제조 방법 | |
| US6534350B2 (en) | Method for fabricating a low temperature polysilicon thin film transistor incorporating channel passivation step | |
| KR101051004B1 (ko) | 두 가지 타입의 박막트랜지스터를 포함하는액정표시장치용 어레이기판 및 그 제조방법 | |
| JPH10133233A (ja) | アクティブマトリクス型表示回路およびその作製方法 | |
| JP2003075870A (ja) | 平面表示装置およびその製造方法 | |
| KR101760946B1 (ko) | 박막트랜지스터 어레이기판 제조방법 | |
| US6482685B1 (en) | Method for fabricating a low temperature polysilicon thin film transistor incorporating multi-layer channel passivation step |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050314 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050401 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050517 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20050630 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050715 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060314 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060511 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20061109 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070116 |