JP2002083773A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2002083773A
JP2002083773A JP2000270849A JP2000270849A JP2002083773A JP 2002083773 A JP2002083773 A JP 2002083773A JP 2000270849 A JP2000270849 A JP 2000270849A JP 2000270849 A JP2000270849 A JP 2000270849A JP 2002083773 A JP2002083773 A JP 2002083773A
Authority
JP
Japan
Prior art keywords
film
layer
forming
tft
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000270849A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002083773A5 (enExample
Inventor
Takeomi Asami
勇臣 浅見
Mitsuhiro Ichijo
充弘 一條
Satoshi Chokai
聡志 鳥海
Takashi Otsuki
高志 大槻
Yoko Kanakubo
陽子 金久保
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000270849A priority Critical patent/JP2002083773A/ja
Publication of JP2002083773A publication Critical patent/JP2002083773A/ja
Publication of JP2002083773A5 publication Critical patent/JP2002083773A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000270849A 2000-09-06 2000-09-06 半導体装置の作製方法 Withdrawn JP2002083773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000270849A JP2002083773A (ja) 2000-09-06 2000-09-06 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000270849A JP2002083773A (ja) 2000-09-06 2000-09-06 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2002083773A true JP2002083773A (ja) 2002-03-22
JP2002083773A5 JP2002083773A5 (enExample) 2007-11-01

Family

ID=18757219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000270849A Withdrawn JP2002083773A (ja) 2000-09-06 2000-09-06 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2002083773A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286772A (ja) * 2005-03-31 2006-10-19 Toppan Printing Co Ltd 薄膜トランジスタ装置及びその製造方法並びに薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ
JP2009071286A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2012109593A (ja) * 2008-07-31 2012-06-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343414A (ja) * 1991-05-21 1992-11-30 Canon Inc 非単結晶半導体装置の製造法
JPH0818063A (ja) * 1994-04-26 1996-01-19 Toshiba Corp 薄膜トランジスタの製造方法、薄膜トランジスタおよび液晶表示装置
JPH09106948A (ja) * 1995-07-31 1997-04-22 Semiconductor Energy Lab Co Ltd 半導体作製方法および半導体装置の作製方法
JPH09156916A (ja) * 1995-11-29 1997-06-17 Semiconductor Energy Lab Co Ltd 多結晶珪素作製装置およびその動作方法
JP2000183360A (ja) * 1998-10-06 2000-06-30 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343414A (ja) * 1991-05-21 1992-11-30 Canon Inc 非単結晶半導体装置の製造法
JPH0818063A (ja) * 1994-04-26 1996-01-19 Toshiba Corp 薄膜トランジスタの製造方法、薄膜トランジスタおよび液晶表示装置
JPH09106948A (ja) * 1995-07-31 1997-04-22 Semiconductor Energy Lab Co Ltd 半導体作製方法および半導体装置の作製方法
JPH09156916A (ja) * 1995-11-29 1997-06-17 Semiconductor Energy Lab Co Ltd 多結晶珪素作製装置およびその動作方法
JP2000183360A (ja) * 1998-10-06 2000-06-30 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286772A (ja) * 2005-03-31 2006-10-19 Toppan Printing Co Ltd 薄膜トランジスタ装置及びその製造方法並びに薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ
JP2009071286A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2012109593A (ja) * 2008-07-31 2012-06-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8729544B2 (en) 2008-07-31 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9087745B2 (en) 2008-07-31 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9111804B2 (en) 2008-07-31 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10937897B2 (en) 2008-07-31 2021-03-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12074210B2 (en) 2008-07-31 2024-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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