JP2002074960A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2002074960A
JP2002074960A JP2000253888A JP2000253888A JP2002074960A JP 2002074960 A JP2002074960 A JP 2002074960A JP 2000253888 A JP2000253888 A JP 2000253888A JP 2000253888 A JP2000253888 A JP 2000253888A JP 2002074960 A JP2002074960 A JP 2002074960A
Authority
JP
Japan
Prior art keywords
bit line
potential
switch
power supply
overdrive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000253888A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002074960A5 (enExample
Inventor
Yasuhiro Suematsu
靖弘 末松
Masaru Koyanagi
勝 小柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2000253888A priority Critical patent/JP2002074960A/ja
Priority to US09/935,010 priority patent/US6519198B2/en
Publication of JP2002074960A publication Critical patent/JP2002074960A/ja
Priority to US10/322,405 priority patent/US6762968B2/en
Publication of JP2002074960A5 publication Critical patent/JP2002074960A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2000253888A 2000-08-24 2000-08-24 半導体記憶装置 Pending JP2002074960A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000253888A JP2002074960A (ja) 2000-08-24 2000-08-24 半導体記憶装置
US09/935,010 US6519198B2 (en) 2000-08-24 2001-08-21 Semiconductor memory device
US10/322,405 US6762968B2 (en) 2000-08-24 2002-12-17 Semiconductor memory device having a small-sized memory chip and a decreased power-supply noise

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000253888A JP2002074960A (ja) 2000-08-24 2000-08-24 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002074960A true JP2002074960A (ja) 2002-03-15
JP2002074960A5 JP2002074960A5 (enExample) 2005-07-07

Family

ID=18742917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000253888A Pending JP2002074960A (ja) 2000-08-24 2000-08-24 半導体記憶装置

Country Status (2)

Country Link
US (2) US6519198B2 (enExample)
JP (1) JP2002074960A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009020952A (ja) * 2007-07-11 2009-01-29 Elpida Memory Inc 半導体記憶装置
US7567469B2 (en) 2006-06-29 2009-07-28 Hynix Semiconductor Inc. Over driving pulse generator
US7800424B2 (en) 2007-02-09 2010-09-21 Hynix Semiconductor Inc. Apparatus for supplying overdriving signal
US8687447B2 (en) 2009-09-30 2014-04-01 SK Hynix Inc. Semiconductor memory apparatus and test method using the same
JP2018073449A (ja) * 2016-11-04 2018-05-10 力晶科技股▲ふん▼有限公司 半導体記憶装置
US10204692B1 (en) 2017-09-14 2019-02-12 Toshiba Memory Corporation Semiconductor memory device
US10892020B2 (en) 2018-06-26 2021-01-12 Toshiba Memory Corporation Semiconductor memory device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3874655B2 (ja) * 2001-12-06 2007-01-31 富士通株式会社 半導体記憶装置、及び半導体記憶装置のデータアクセス方法
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US7176719B2 (en) * 2004-08-31 2007-02-13 Micron Technology, Inc. Capacitively-coupled level restore circuits for low voltage swing logic circuits
KR100613449B1 (ko) 2004-10-07 2006-08-21 주식회사 하이닉스반도체 내부전압 공급회로
US20060234727A1 (en) * 2005-04-13 2006-10-19 Wirelesswerx International, Inc. Method and System for Initiating and Handling an Emergency Call
US7580287B2 (en) 2005-09-01 2009-08-25 Micron Technology, Inc. Program and read trim setting
US7564728B2 (en) * 2005-09-29 2009-07-21 Hynix Semiconductor, Inc. Semiconductor memory device and its driving method
JP4824500B2 (ja) * 2005-10-28 2011-11-30 エルピーダメモリ株式会社 半導体記憶装置
JP2020102293A (ja) 2018-12-25 2020-07-02 キオクシア株式会社 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0122108B1 (ko) * 1994-06-10 1997-12-05 윤종용 반도체 메모리 장치의 비트라인 센싱회로 및 그 방법
JPH09330591A (ja) * 1996-06-11 1997-12-22 Fujitsu Ltd センスアンプ駆動回路
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
JPH1186553A (ja) 1997-09-08 1999-03-30 Hitachi Ltd 半導体集積回路装置
DE19929095B4 (de) * 1998-06-29 2005-12-08 Fujitsu Ltd., Kawasaki Halbleiterspeichervorrichtung mit übersteuertem Leseverstärker und Halbleitervorrichtung
JP4043142B2 (ja) * 1999-05-18 2008-02-06 富士通株式会社 メモリデバイス
JP4034476B2 (ja) * 1999-06-29 2008-01-16 株式会社東芝 半導体記憶装置
KR100300079B1 (ko) * 1999-07-28 2001-11-01 김영환 센스앰프 구동회로
US6347058B1 (en) * 2000-05-19 2002-02-12 International Business Machines Corporation Sense amplifier with overdrive and regulated bitline voltage

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7567469B2 (en) 2006-06-29 2009-07-28 Hynix Semiconductor Inc. Over driving pulse generator
US7800424B2 (en) 2007-02-09 2010-09-21 Hynix Semiconductor Inc. Apparatus for supplying overdriving signal
JP2009020952A (ja) * 2007-07-11 2009-01-29 Elpida Memory Inc 半導体記憶装置
US8687447B2 (en) 2009-09-30 2014-04-01 SK Hynix Inc. Semiconductor memory apparatus and test method using the same
JP2018073449A (ja) * 2016-11-04 2018-05-10 力晶科技股▲ふん▼有限公司 半導体記憶装置
US11393545B2 (en) 2017-09-14 2022-07-19 Kioxia Corporation Semiconductor memory device
US11011241B2 (en) 2017-09-14 2021-05-18 Toshiba Memory Corporation Semiconductor memory device
US10204692B1 (en) 2017-09-14 2019-02-12 Toshiba Memory Corporation Semiconductor memory device
US11837295B2 (en) 2017-09-14 2023-12-05 Kioxia Corporation Semiconductor memory device
US12387799B2 (en) 2017-09-14 2025-08-12 Kioxia Corporation Semiconductor memory device
US10892020B2 (en) 2018-06-26 2021-01-12 Toshiba Memory Corporation Semiconductor memory device
US11158388B2 (en) 2018-06-26 2021-10-26 Toshiba Memory Corporation Semiconductor memory device
US11594285B2 (en) 2018-06-26 2023-02-28 Kioxia Corporation Semiconductor memory device
US11894070B2 (en) 2018-06-26 2024-02-06 Kioxia Corporation Semiconductor memory device

Also Published As

Publication number Publication date
US20020031027A1 (en) 2002-03-14
US6762968B2 (en) 2004-07-13
US6519198B2 (en) 2003-02-11
US20030086317A1 (en) 2003-05-08

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