JP2002057162A5 - - Google Patents

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Publication number
JP2002057162A5
JP2002057162A5 JP2001118527A JP2001118527A JP2002057162A5 JP 2002057162 A5 JP2002057162 A5 JP 2002057162A5 JP 2001118527 A JP2001118527 A JP 2001118527A JP 2001118527 A JP2001118527 A JP 2001118527A JP 2002057162 A5 JP2002057162 A5 JP 2002057162A5
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JP
Japan
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Application number
JP2001118527A
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Japanese (ja)
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JP4731714B2 (ja
JP2002057162A (ja
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Priority to JP2001118527A priority Critical patent/JP4731714B2/ja
Priority claimed from JP2001118527A external-priority patent/JP4731714B2/ja
Publication of JP2002057162A publication Critical patent/JP2002057162A/ja
Publication of JP2002057162A5 publication Critical patent/JP2002057162A5/ja
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Publication of JP4731714B2 publication Critical patent/JP4731714B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001118527A 2000-04-17 2001-04-17 発光装置 Expired - Fee Related JP4731714B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001118527A JP4731714B2 (ja) 2000-04-17 2001-04-17 発光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000115699 2000-04-17
JP2000-115699 2000-04-17
JP2000115699 2000-04-17
JP2001118527A JP4731714B2 (ja) 2000-04-17 2001-04-17 発光装置

Publications (3)

Publication Number Publication Date
JP2002057162A JP2002057162A (ja) 2002-02-22
JP2002057162A5 true JP2002057162A5 (enrdf_load_stackoverflow) 2008-04-10
JP4731714B2 JP4731714B2 (ja) 2011-07-27

Family

ID=26590262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001118527A Expired - Fee Related JP4731714B2 (ja) 2000-04-17 2001-04-17 発光装置

Country Status (1)

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JP (1) JP4731714B2 (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4731715B2 (ja) * 2000-04-19 2011-07-27 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4718677B2 (ja) 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
CN1432984A (zh) 2002-01-18 2003-07-30 株式会社半导体能源研究所 发光器件
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4493933B2 (ja) * 2002-05-17 2010-06-30 株式会社半導体エネルギー研究所 表示装置
US7592980B2 (en) 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4408012B2 (ja) * 2002-07-01 2010-02-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004220907A (ja) * 2003-01-15 2004-08-05 Dainippon Printing Co Ltd 有機ｅｌディスプレイおよびディスプレイ用透明電極基板
JP4574130B2 (ja) 2003-06-18 2010-11-04 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4522904B2 (ja) * 2004-04-19 2010-08-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7692378B2 (en) * 2004-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device including an insulating layer with an opening
US7268498B2 (en) * 2004-04-28 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4741286B2 (ja) * 2004-06-11 2011-08-03 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7550769B2 (en) 2004-06-11 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and semiconductor device
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
JP4947910B2 (ja) * 2005-02-28 2012-06-06 三菱電機株式会社 半導体装置およびその製造方法
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
US8999836B2 (en) 2005-05-13 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP4924293B2 (ja) * 2007-08-29 2012-04-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5459142B2 (ja) * 2010-08-11 2014-04-02 セイコーエプソン株式会社 有機ｅｌ装置、有機ｅｌ装置の製造方法、及び電子機器
CN110731126B (zh) 2017-06-13 2022-05-24 堺显示器制品株式会社 有机el设备及其制造方法
JP6567121B2 (ja) * 2018-03-28 2019-08-28 堺ディスプレイプロダクト株式会社 薄膜封止構造形成装置
JP6872586B2 (ja) * 2019-07-30 2021-05-19 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086579B2 (ja) * 1993-12-28 2000-09-11 シャープ株式会社 薄膜トランジスタの製造方法
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH1074951A (ja) * 1996-08-29 1998-03-17 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH11345978A (ja) * 1998-04-03 1999-12-14 Toshiba Corp 薄膜トランジスタおよびその製造方法、液晶表示装置

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