JP2002050634A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2002050634A
JP2002050634A JP2001125785A JP2001125785A JP2002050634A JP 2002050634 A JP2002050634 A JP 2002050634A JP 2001125785 A JP2001125785 A JP 2001125785A JP 2001125785 A JP2001125785 A JP 2001125785A JP 2002050634 A JP2002050634 A JP 2002050634A
Authority
JP
Japan
Prior art keywords
film
forming
tft
semiconductor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001125785A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002050634A5 (ko
Inventor
Takeomi Asami
勇臣 浅見
Mitsuhiro Ichijo
充弘 一條
Satoshi Chokai
聡志 鳥海
Takashi Otsuki
高志 大槻
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001125785A priority Critical patent/JP2002050634A/ja
Publication of JP2002050634A publication Critical patent/JP2002050634A/ja
Publication of JP2002050634A5 publication Critical patent/JP2002050634A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2001125785A 2000-04-28 2001-04-24 半導体装置の作製方法 Withdrawn JP2002050634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001125785A JP2002050634A (ja) 2000-04-28 2001-04-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000131353 2000-04-28
JP2000-131353 2000-04-28
JP2001125785A JP2002050634A (ja) 2000-04-28 2001-04-24 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2002050634A true JP2002050634A (ja) 2002-02-15
JP2002050634A5 JP2002050634A5 (ko) 2008-05-08

Family

ID=26591284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001125785A Withdrawn JP2002050634A (ja) 2000-04-28 2001-04-24 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2002050634A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004056099A (ja) * 2002-05-17 2004-02-19 Semiconductor Energy Lab Co Ltd 窒化珪素膜、並びに半導体装置及びその作製方法
US7893439B2 (en) 2002-05-17 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Silicon nitride film and semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249627A (ja) * 1985-08-28 1987-03-04 Nec Corp 半導体装置の製造方法
JPH08339960A (ja) * 1994-07-01 1996-12-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH09270412A (ja) 1996-04-01 1997-10-14 Canon Inc 洗浄装置及び洗浄方法
JPH09321009A (ja) * 1996-05-29 1997-12-12 Toshiba Corp 半導体装置の製造方法
JPH1064861A (ja) * 1996-08-22 1998-03-06 Sony Corp ウエハの洗浄方法および装置
JPH1140645A (ja) * 1997-07-22 1999-02-12 Kaijo Corp 超音波式浮揚搬送機構を備えたクラスターツール型枚葉処理装置
JPH11168215A (ja) 1997-12-03 1999-06-22 Seiko Epson Corp アクティブマトリクス基板およびその製造方法、並びに液晶表示装置
WO2000007220A2 (en) 1998-07-29 2000-02-10 Cfmt, Inc. Wet processing methods for the manufacture of electronic components using ozonated process fluids

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249627A (ja) * 1985-08-28 1987-03-04 Nec Corp 半導体装置の製造方法
JPH08339960A (ja) * 1994-07-01 1996-12-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH09270412A (ja) 1996-04-01 1997-10-14 Canon Inc 洗浄装置及び洗浄方法
JPH09321009A (ja) * 1996-05-29 1997-12-12 Toshiba Corp 半導体装置の製造方法
JPH1064861A (ja) * 1996-08-22 1998-03-06 Sony Corp ウエハの洗浄方法および装置
JPH1140645A (ja) * 1997-07-22 1999-02-12 Kaijo Corp 超音波式浮揚搬送機構を備えたクラスターツール型枚葉処理装置
JPH11168215A (ja) 1997-12-03 1999-06-22 Seiko Epson Corp アクティブマトリクス基板およびその製造方法、並びに液晶表示装置
WO2000007220A2 (en) 1998-07-29 2000-02-10 Cfmt, Inc. Wet processing methods for the manufacture of electronic components using ozonated process fluids

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004056099A (ja) * 2002-05-17 2004-02-19 Semiconductor Energy Lab Co Ltd 窒化珪素膜、並びに半導体装置及びその作製方法
JP4627971B2 (ja) * 2002-05-17 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7893439B2 (en) 2002-05-17 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Silicon nitride film and semiconductor device
KR101028346B1 (ko) * 2002-05-17 2011-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 질화 규소막 및 반도체 장치
KR101054240B1 (ko) * 2002-05-17 2011-08-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8866144B2 (en) 2002-05-17 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device having silicon nitride film
US9847355B2 (en) 2002-05-17 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Silicon nitride film, and semiconductor device

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