JP2002050634A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法Info
- Publication number
- JP2002050634A JP2002050634A JP2001125785A JP2001125785A JP2002050634A JP 2002050634 A JP2002050634 A JP 2002050634A JP 2001125785 A JP2001125785 A JP 2001125785A JP 2001125785 A JP2001125785 A JP 2001125785A JP 2002050634 A JP2002050634 A JP 2002050634A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- tft
- semiconductor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001125785A JP2002050634A (ja) | 2000-04-28 | 2001-04-24 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000131353 | 2000-04-28 | ||
JP2000-131353 | 2000-04-28 | ||
JP2001125785A JP2002050634A (ja) | 2000-04-28 | 2001-04-24 | 半導体装置の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002050634A true JP2002050634A (ja) | 2002-02-15 |
JP2002050634A5 JP2002050634A5 (ko) | 2008-05-08 |
Family
ID=26591284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001125785A Withdrawn JP2002050634A (ja) | 2000-04-28 | 2001-04-24 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002050634A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004056099A (ja) * | 2002-05-17 | 2004-02-19 | Semiconductor Energy Lab Co Ltd | 窒化珪素膜、並びに半導体装置及びその作製方法 |
US7893439B2 (en) | 2002-05-17 | 2011-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film and semiconductor device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249627A (ja) * | 1985-08-28 | 1987-03-04 | Nec Corp | 半導体装置の製造方法 |
JPH08339960A (ja) * | 1994-07-01 | 1996-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JPH09270412A (ja) | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
JPH09321009A (ja) * | 1996-05-29 | 1997-12-12 | Toshiba Corp | 半導体装置の製造方法 |
JPH1064861A (ja) * | 1996-08-22 | 1998-03-06 | Sony Corp | ウエハの洗浄方法および装置 |
JPH1140645A (ja) * | 1997-07-22 | 1999-02-12 | Kaijo Corp | 超音波式浮揚搬送機構を備えたクラスターツール型枚葉処理装置 |
JPH11168215A (ja) | 1997-12-03 | 1999-06-22 | Seiko Epson Corp | アクティブマトリクス基板およびその製造方法、並びに液晶表示装置 |
WO2000007220A2 (en) | 1998-07-29 | 2000-02-10 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using ozonated process fluids |
-
2001
- 2001-04-24 JP JP2001125785A patent/JP2002050634A/ja not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249627A (ja) * | 1985-08-28 | 1987-03-04 | Nec Corp | 半導体装置の製造方法 |
JPH08339960A (ja) * | 1994-07-01 | 1996-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JPH09270412A (ja) | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
JPH09321009A (ja) * | 1996-05-29 | 1997-12-12 | Toshiba Corp | 半導体装置の製造方法 |
JPH1064861A (ja) * | 1996-08-22 | 1998-03-06 | Sony Corp | ウエハの洗浄方法および装置 |
JPH1140645A (ja) * | 1997-07-22 | 1999-02-12 | Kaijo Corp | 超音波式浮揚搬送機構を備えたクラスターツール型枚葉処理装置 |
JPH11168215A (ja) | 1997-12-03 | 1999-06-22 | Seiko Epson Corp | アクティブマトリクス基板およびその製造方法、並びに液晶表示装置 |
WO2000007220A2 (en) | 1998-07-29 | 2000-02-10 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using ozonated process fluids |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004056099A (ja) * | 2002-05-17 | 2004-02-19 | Semiconductor Energy Lab Co Ltd | 窒化珪素膜、並びに半導体装置及びその作製方法 |
JP4627971B2 (ja) * | 2002-05-17 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7893439B2 (en) | 2002-05-17 | 2011-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film and semiconductor device |
KR101028346B1 (ko) * | 2002-05-17 | 2011-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 질화 규소막 및 반도체 장치 |
KR101054240B1 (ko) * | 2002-05-17 | 2011-08-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8866144B2 (en) | 2002-05-17 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor device having silicon nitride film |
US9847355B2 (en) | 2002-05-17 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film, and semiconductor device |
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