JP2002043383A5 - - Google Patents
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- Publication number
- JP2002043383A5 JP2002043383A5 JP2000227807A JP2000227807A JP2002043383A5 JP 2002043383 A5 JP2002043383 A5 JP 2002043383A5 JP 2000227807 A JP2000227807 A JP 2000227807A JP 2000227807 A JP2000227807 A JP 2000227807A JP 2002043383 A5 JP2002043383 A5 JP 2002043383A5
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- JP
- Japan
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000227807A JP4556302B2 (ja) | 2000-07-27 | 2000-07-27 | 薄膜トランジスタ製造システム及び方法、ポリシリコン評価方法及びポリシリコン検査装置 |
| TW090117829A TW498555B (en) | 2000-07-27 | 2001-07-20 | System for manufacturing a thin-film transistor, method of manufacturing a thin-film transistor, method of evaluating polysilicon, and apparatus for inspecting polysilicon |
| DE60144545T DE60144545D1 (de) | 2000-07-27 | 2001-07-25 | Herstellungssystem und Methode eines Dünnschicht-Transistors, Polysilizium-Untersuchungsmethode und Apparat |
| US09/912,713 US6555423B2 (en) | 2000-07-27 | 2001-07-25 | Method of manufacturing a thin film transistor and a method of evaluating a polysilicon film |
| EP01306383A EP1176636B1 (en) | 2000-07-27 | 2001-07-25 | System for manufacturing a thin-film transistor, method of manufacturing a thin-film transistor, method of evaluationg polysilicon, and apparatus for inspecting polysilicon |
| KR1020010045109A KR100792538B1 (ko) | 2000-07-27 | 2001-07-26 | 박막트랜지스터 제조를 위한 시스템, 박막트랜지스터제조방법, 다결정실리콘 평가방법과, 다결정실리콘 검사를위한 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000227807A JP4556302B2 (ja) | 2000-07-27 | 2000-07-27 | 薄膜トランジスタ製造システム及び方法、ポリシリコン評価方法及びポリシリコン検査装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002043383A JP2002043383A (ja) | 2002-02-08 |
| JP2002043383A5 true JP2002043383A5 (ja) | 2007-06-21 |
| JP4556302B2 JP4556302B2 (ja) | 2010-10-06 |
Family
ID=18721207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000227807A Expired - Fee Related JP4556302B2 (ja) | 2000-07-27 | 2000-07-27 | 薄膜トランジスタ製造システム及び方法、ポリシリコン評価方法及びポリシリコン検査装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6555423B2 (ja) |
| EP (1) | EP1176636B1 (ja) |
| JP (1) | JP4556302B2 (ja) |
| KR (1) | KR100792538B1 (ja) |
| DE (1) | DE60144545D1 (ja) |
| TW (1) | TW498555B (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW490802B (en) * | 2000-01-07 | 2002-06-11 | Sony Corp | Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor |
| JP4715016B2 (ja) * | 2001-02-15 | 2011-07-06 | ソニー株式会社 | ポリシリコン膜の評価方法 |
| JP4061062B2 (ja) * | 2001-12-13 | 2008-03-12 | ローム株式会社 | 半導体発光素子の製法および酸化炉 |
| US7005601B2 (en) * | 2002-04-18 | 2006-02-28 | Applied Materials, Inc. | Thermal flux processing by scanning |
| US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
| KR100916656B1 (ko) * | 2002-10-22 | 2009-09-08 | 삼성전자주식회사 | 레이저 조사 장치 및 이를 이용한 다결정 규소 박막트랜지스터의 제조 방법 |
| KR101041066B1 (ko) * | 2004-02-13 | 2011-06-13 | 삼성전자주식회사 | 실리콘 결정화 방법, 이를 이용한 실리콘 결정화 장치,이를 이용한 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 이용한 표시장치 |
| JP2007003352A (ja) * | 2005-06-23 | 2007-01-11 | Sony Corp | ポリシリコン膜の結晶状態検査装置、これを用いたポリシリコン膜の結晶状態検査方法及び薄膜トランジスタの製造システム |
| JP5316846B2 (ja) * | 2008-08-01 | 2013-10-16 | Ｎｌｔテクノロジー株式会社 | 多結晶薄膜の粒径均一性の判定装置及びレーザ照射装置 |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| WO2015081072A1 (en) * | 2013-11-26 | 2015-06-04 | Applied Materials Israel, Ltd. | System and method for forming a sealed chamber |
| SG10201605683WA (en) * | 2015-07-22 | 2017-02-27 | Ultratech Inc | High-efficiency line-forming optical systems and methods using a serrated spatial filter |
| JP6688205B2 (ja) * | 2015-11-13 | 2020-04-28 | 株式会社堀場製作所 | 試料分析装置及び試料分析プログラム |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02277244A (ja) * | 1989-04-19 | 1990-11-13 | Hitachi Ltd | 半導体装置の製造方法 |
| US5529951A (en) * | 1993-11-02 | 1996-06-25 | Sony Corporation | Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
| US5864394A (en) | 1994-06-20 | 1999-01-26 | Kla-Tencor Corporation | Surface inspection system |
| JP2638554B2 (ja) * | 1995-03-16 | 1997-08-06 | 日本電気株式会社 | 表面モニター方法、表面積測定方法、半導体装置の製造装置及び方法 |
| US6136632A (en) | 1995-12-26 | 2000-10-24 | Seiko Epson Corporation | Active matrix substrate, method of producing an active matrix substrate, liquid crystal display device, and electronic equipment |
| US5825498A (en) | 1996-02-05 | 1998-10-20 | Micron Technology, Inc. | Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials |
| US5773329A (en) * | 1996-07-24 | 1998-06-30 | International Business Machines Corporation | Polysilicon grown by pulsed rapid thermal annealing |
| JPH1096696A (ja) * | 1996-09-25 | 1998-04-14 | Mitsubishi Heavy Ind Ltd | 対象物にあるむらの検査方法および装置 |
| JPH10312962A (ja) * | 1997-05-13 | 1998-11-24 | Nec Corp | 多結晶シリコン薄膜の形成方法および多結晶シリコン薄膜トランジスタ |
| JP3503427B2 (ja) * | 1997-06-19 | 2004-03-08 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| JP3156776B2 (ja) * | 1998-08-03 | 2001-04-16 | 日本電気株式会社 | レーザ照射方法 |
| JP2000122088A (ja) * | 1998-10-14 | 2000-04-28 | Toshiba Corp | 液晶表示装置およびその製造方法 |
-
2000
- 2000-07-27 JP JP2000227807A patent/JP4556302B2/ja not_active Expired - Fee Related
-
2001
- 2001-07-20 TW TW090117829A patent/TW498555B/zh not_active IP Right Cessation
- 2001-07-25 DE DE60144545T patent/DE60144545D1/de not_active Expired - Lifetime
- 2001-07-25 US US09/912,713 patent/US6555423B2/en not_active Expired - Lifetime
- 2001-07-25 EP EP01306383A patent/EP1176636B1/en not_active Expired - Lifetime
- 2001-07-26 KR KR1020010045109A patent/KR100792538B1/ko not_active IP Right Cessation