JP2002002871A - Method for manufacturing semiconductor device and tray used therein - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the protectiveness of a semiconductor device not only to prevent the destruction of a semiconductor chip but also to reduce the deformation of a tray. SOLUTION: The tray consists of the tray main body part 1d for connecting a plurality of pockets 1a and the cushioning part 1g provided to the bottom parts 1c of the pockets 1a being the contact places with CSPs 2 when the CSPs 2 are housed in the pockets 1a and formed from a soft material of which the hardness is lower than that of the tray main body part 1d and the impact force to the CSPs 2 at the time of falling of the tray is relieved to prevent the distruction or damage of the CSPs 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technology, and more particularly to a technology effective when applied to improving the protection of a semiconductor device when a semiconductor device is housed in a stacked tray.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

[0003] A plate-shaped container called a tray is known as a container for storing a semiconductor device used for transporting a semiconductor device (also referred to as a semiconductor package) between each process of a semiconductor manufacturing process or shipping. Have been.

[0004] In this tray, a plurality of concave pockets (storage portions) for accommodating each semiconductor device are formed on the front and back surfaces thereof in a matrix, and each semiconductor device is accommodated in each pocket. In addition, by stacking the trays, a plurality of semiconductor devices can be stored.

In the semiconductor device, a plurality of ball electrodes as external terminals are arranged in a matrix on an external terminal mounting surface (mounting side) which is the back surface of the main body formed by molding (area array arrangement). CSP (Chip Scale Package or Chip Size P)
ackage), BGA (Ball Grid Array), or wafer process package (hereinafter abbreviated as WPP, a chip-size semiconductor package obtained by rearranging pads on a wafer in an area array, molding, and then dicing). Flip chip products and the like are known, and a stacked tray is sometimes used when storing and transporting these semiconductor devices.

In addition, in addition to transporting the semiconductor device, the stacked tray is turned upside down in a state where the semiconductor device is stored, so that the semiconductor device is supported by the tray disposed on the lower side and disposed on the upper side. The removed tray may be used as a jig when inspecting the appearance of the ball electrode on the back surface of the CSP or BGA.

[0007] Further, it is sometimes used as a jig for performing a baking process for a semiconductor device for each tray.

[0008] A laminated tray for storing electronic parts and fine parts such as semiconductor devices is disclosed in, for example, JP-A-11-208764 and JP-A-11-14531.
No. 5 or JP-A-7-277389 describes the technique.

[0009]

However, in the tray of the above-mentioned technology, when the semiconductor device is transported and the tray is dropped and receives an impact, the semiconductor device in the tray is also impacted in the pocket and as a result, Semiconductor device is CSP or W
In the case of a chip-exposed type such as a PP or flip-chip product, there is a problem that a crack is formed in the semiconductor chip or the semiconductor chip is broken due to cracking.

Further, in a relatively large and heavy semiconductor device such as a mold type BGA, a ball electrode which is an external terminal of the BGA is deformed by an impact such as when a tray is dropped, or the ball electrode is Dropping is a problem.

Therefore, it is conceivable that the entire tray is formed of a relatively soft material having a low hardness. However, since the basic structure of the tray is a single-plate structure, the tray is baked (for example, at a high temperature of 150 ° C. or higher). ) Causes the tray to be warped. As a result, the tray cannot be detached when the trays are stacked, thereby causing a problem of poor handling.

Therefore, a technique for partially forming the tray with a material different from that of the tray main body is considered, but Japanese Patent Application Laid-Open Nos. 11-208764 and 11-14531 disclose the technique.
No. 5 and JP-A-7-277389 do not describe such a technique.

An object of the present invention is to provide a method of manufacturing a semiconductor device for improving the protection of the semiconductor device and preventing breakage of the semiconductor chip, and a tray used for the method.

Still another object of the present invention is to provide a method of manufacturing a semiconductor device for reducing the deformation of a tray and a tray used for the method.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0016]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

According to the present invention, a plurality of trays having a tray body for connecting a plurality of storage portions and a buffer portion formed of a softer material are prepared, and the semiconductor device is supported by the buffer portion in the storage portion. A tray and another tray that can be stacked on the tray are stacked, and buffer portions of the tray and the other tray are arranged on both front and back sides of the semiconductor device to house the semiconductor device.

An outline of another invention of the present application will be briefly described in sections. That is, 1. A plurality of trays each having a tray main body portion connecting a plurality of storage portions, and a buffer portion provided at a bottom portion that is a contact portion of the storage portion with the semiconductor device and formed of a material softer than the tray main body portion. The step of preparing,
A step of disposing the semiconductor device in the storage portion of the tray and supporting the mounting side surface of the main body of the semiconductor device by the buffer portion, and laminating the tray and another tray that can be laminated on the tray; And disposing the buffer portion of the tray and the other tray on both front and back sides of the semiconductor device in the storage portion of the tray to store the semiconductor device. Production method. 2. A plurality of tray main units that connect a plurality of storage units, and a plurality of buffer units that are provided on the bottom and inner walls of the storage units that are in contact with the semiconductor device and that are formed of a material softer than the tray main unit. A step of preparing a tray, a step of arranging the semiconductor device in the storage section of the tray and supporting a mounting surface or an external terminal of a main body of the semiconductor device by the buffer section, Stacking another stackable tray and storing the semiconductor device by arranging the buffer portion of the tray and the other tray on both front and back sides of the semiconductor device in the storage portion of the tray; A method for manufacturing a semiconductor device, comprising: 3. A plurality of trays each having a tray main body portion connecting a plurality of storage portions, and a buffer portion provided at a contact portion of the storage portion with the semiconductor device and formed of a resin material having a lower hardness than the tray main body portion. Preparing, placing the semiconductor device in the storage portion of the tray and supporting the semiconductor device by the buffering portion, stacking the tray and another tray that can be stacked thereon, A step of arranging the buffer section of the tray and the other tray on both front and back sides of the semiconductor device in the storage section of the tray to store the semiconductor device. 4. A step of preparing a plurality of trays each having a tray main body portion connecting a plurality of storage portions and a buffer portion provided at a contact portion of the storage portion with the semiconductor device and formed of a material softer than the tray main body portion; And a step of disposing the semiconductor device in the storage portion of the tray and supporting the semiconductor device by the buffer portion, and stacking the tray and another tray that can be stacked thereon, Placing the buffer portion of the tray and the other tray on both front and back sides of the semiconductor device in the storage portion to store the semiconductor device. 5. A step of preparing a plurality of trays having a tray main body portion connecting a plurality of storage portions, and a buffer portion provided to position a semiconductor device in the storage portion and formed of a material softer than the tray main body portion; Arranging the buffer inside the gull-wing outer lead of the semiconductor device, positioning the semiconductor device by the buffer, and housing the semiconductor device in the housing of the tray; and And stacking another tray that can be stacked on the tray and storing the semiconductor device in the storage section of each of the trays. 6. A step of preparing a plurality of trays, each of the plurality of storage units having a side wall and a bottom surface connected thereto, wherein the bottom surface is a buffer unit formed of a material softer than the tray main body unit; and a first tray of the plurality of trays and the plurality of trays. The first tray and the buffer portion of the second tray are arranged on the front and back surfaces of the semiconductor device in the storage portion of the first tray. And housing the semiconductor device as described above. 7. A tray main body for connecting a plurality of concave storages for storing semiconductor devices, and a buffer provided in the storage and formed of a softer material than the tray main body; When stacking the tray and another tray that can be stacked on the tray with the semiconductor device stored therein, the buffer portions are arranged on both front and back sides of the semiconductor device, and at least one of the front and back sides. A tray wherein the buffer is in contact with the semiconductor device.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

Further, in the following embodiments, when it is necessary for convenience, the description will be made by dividing into a plurality of sections or embodiments, but they are not unrelated to each other unless otherwise specified. One has a relationship of some or all of the other, such as modified examples, details, and supplementary explanations.

In the following embodiments, when referring to the number of elements (including the number, numerical value, amount, range, and the like), the number is particularly limited and is limited to a specific number in principle. Except for cases, the number is not limited to the specific number, and may be greater than or less than the specific number.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

(Embodiment 1) FIG. 1 is a view showing an example of a structure on the front side of a tray used in a method of manufacturing a semiconductor device according to Embodiment 1 of the present invention, wherein FIG.
2B is a side view in the tray longitudinal direction, FIG. 2C is a side view in the tray width direction, FIG. 2 is an enlarged view showing a detailed structure of a portion A shown in FIG. 1A, and FIG. Figure, (b) is (a)
FIG. 3C is a cross-sectional view showing a cross section taken along the line CC of FIG. 1A, FIG. 3 is a bottom view showing the structure of the back surface side of the tray shown in FIG. 1, and FIG. 5 is an enlarged partial plan view showing the detailed structure of the portion D shown in FIG. 5, FIG. 5 is a characteristic data diagram showing an example of the characteristics of the material used for forming the tray body in the tray shown in FIG. 1, and FIG. 6 is shown in FIG. FIG. 7 is a characteristic data diagram showing an example of a characteristic of a material used for forming a buffer portion in the tray, FIG. 7 is an enlarged partial cross-sectional view showing an example of a storage state of a semiconductor device using the tray shown in FIG. 1, and FIG. FIG. 9 is a perspective view showing an example of the state of the tray during the inter-process transfer in the method for manufacturing a semiconductor device using the tray shown in FIG. 9, and FIG. 9 is a diagram illustrating the back surface inspection of the semiconductor device in the method for manufacturing the semiconductor device using the tray shown in FIG. FIG. 10 is an enlarged partial sectional view showing an example of the state of the tray shown in FIG. It is a perspective view corresponding to packaging procedures and packaging process flow diagram illustrating an example of a packing method of a semiconductor device in a manufacturing method of a semiconductor device using the tray shown in FIG.

The tray 1 used in the method of manufacturing a semiconductor device (semiconductor package) according to the first embodiment is a laminated plate-like one in which the semiconductor devices are arranged in a matrix and stored. As shown in FIG.
The tray 1 capable of storing 7 = 204 semiconductor devices will be described. However, the number of semiconductor devices that can be stored is not limited to 204, and even if the number is
It may be 04 or more.

Further, the tray 1 described in the first embodiment
As shown in FIG. 7, a plurality of ball electrodes are arranged in an area array on an external terminal mounting surface (mounting surface) 2c, which is a back surface opposite to the front surface of the main body 2a. (External terminals) 2b are arranged,
As an example, a small CSP 2 will be described.

First, the tray 1 shown in FIGS. 1 to 4 will be described. The tray 1 is of a laminated type that accommodates a CSP 2 and has a plurality of pockets (storage portions) 1a arranged in a matrix on both front and back sides. , Each pocket 1
a, storing and transporting a plurality of CSP2s;
It is used when performing desired processing such as characteristic selection, inspection, baking processing or shipping.

The configuration of the tray 1 includes a tray main body 1d for connecting a plurality of pockets 1a,
When the SP2 is stored, it is provided at a contact portion with the CSP2, and comprises a buffer portion 1g formed of a material softer than the tray main body portion 1d.

That is, the tray 1 is provided with the C
By providing a buffer portion 1g made of a material softer than the tray main body portion 1d at a position in contact with the SP2, the impact force on the CSP2 at the time of dropping the tray or the like is reduced to reduce the impact force on the CSP2.
To prevent the destruction and breakage of

Each pocket 1a of the tray 1 is shown in FIG.
And as shown in FIG. 3, the surface 1e of the tray body 1d.
(One surface) and the opposite back surface 1f (the other surface) are formed at the same locations on both surfaces. That is,
The back side of the pocket 1a of the front surface 1e is a pocket 1a of the back surface 1f, and the front surface 1e of the pocket 1a is sandwiched between the buffer portions 1g.
A pocket 1a is formed on each of the side and the back surface 1f.

In the first embodiment, the buffer 1g
However, as shown in FIGS. 2A, 2B and 2C, the pocket 1
The buffer 1a is provided on the bottom 1c, and a plurality of protrusions 1b are formed on both front and back surfaces of the buffer 1g.

At this time, as shown in FIG. 7, in the pocket 1a on the front surface 1e side, when the CSP 2 is stored in the pocket 1a, the ball electrode on the external terminal mounting surface 2c of the tape substrate 2d of the main body 2a of the CSP 2 is formed. 2b and buffer 1g
The protrusion 1b is formed on the buffer 1g so that the protrusion 1b does not come into contact with the protrusion 1b.

That is, as shown in FIG. 2A, the protrusion 1b contacts the longitudinal end of the external terminal mounting surface 2c to support the CSP 2 with respect to the external terminal mounting surface 2c of the tape substrate 2d. As shown, the bottom 1 of the pocket 1a
5 are provided at both ends in the longitudinal direction of c.

On the other hand, in the pocket 1a on the back surface 1f side, when the stacked multi-stage tray 1 is turned upside down, the semiconductor chip 3 in the CSP 2 stored in the pocket 1a of the lower tray 1 before inversion is turned on. As shown in FIG. 4, 18 pockets 1a are provided almost uniformly distributed over the entire bottom 1c of the pocket 1a so as to support the surface 3a (the surface opposite to the surface on which the bonding electrode is formed) after inversion. I have.

However, the number of protrusions 1b provided on the front and back surfaces of the buffer 1g is not particularly limited.

The protrusion 1b has a shape such that the horizontal cross-sectional area gradually decreases toward the tip so that the impact force applied to the CSP 2 when the tray 1 falls or the like can be reduced. ing.

That is, the protrusion 1b of the buffer 1g in the tray 1 is formed in a conical shape as shown in FIGS. 2 (b) and 2 (c). However, the shape may be a pyramid other than a cone or the like, or may be another shape.

As for the manufacture of the tray 1, the tray body 1d and the buffer 1g are manufactured by a double molding method in which molding is performed simultaneously with different molding materials.

Therefore, it is preferable that the tray body 1d and the buffer 1g of the tray 1 are formed of a resin material which can be easily transfer-molded.

However, instead of the above-mentioned double molding method,
After performing each mold separately, both may be joined.

In the tray 1, the buffer 1g is made of a material softer than the tray body 1d. For example, the hardness of the resin material forming the buffer 1g is
It is sufficient that the hardness is lower than the hardness of the resin material forming the tray body 1d (the lower the better).

Further, since the tray 1 is also used as a storage jig when performing the baking process of the CSP 2, the tray body 1d and the buffer 1g are formed of a resin material having high heat resistance. For example, it is more preferable to be formed of a resin material having heat resistance of 150 ° C. or more, which is the temperature of the baking treatment.

The tray body 1d and the buffer 1g
As an example of the resin material forming each, for example,
The tray body 1d is made of polyphenylene ether (PP
E), on the other hand, the buffer 1g made of a material softer than the tray body 1d is, for example, a polyester elastomer, and the main material characteristic data of both are shown in FIG.
(PPE) and FIG. 6 (polyester elastomer).

The tray 1 is of a laminated type.

That is, as shown in FIG. 7, the tray 1 is formed in a shape capable of stacking the trays in a plurality of stages, and the CSPs 2 are stored in the pockets 1a of the trays 1 except for the uppermost stage. can do. As shown in FIG. 2A, the pocket 1a on the surface 1e side of the tray 1
The corner is formed by being surrounded by a cross-shaped front side guide 1h. (However, the outermost pocket 1a of the tray 1 is a cross-shaped and T-shaped front side guide 1h or a cross-shaped, T-shaped and L-shaped. And is formed so as to be surrounded by the letter-shaped front side guide 1h).

Therefore, in order for the tray 1 to be of the stacked type, the back surface guide 1i as shown in FIG. 4 is provided at a position corresponding to the space between the adjacent front surface guides 1h on the front surface 1e side on the back surface 1f side. Therefore, when the trays 1 are stacked, the front side guide 1 on the front side 1e is provided.
h and the back surface guide 1i on the back surface 1f are fitted without interference, and positioning between the trays when stacking the trays is performed.

The pocket 1a on the front surface 1e comprises a region surrounded by a cross-shaped, T-shaped or L-shaped front-side guide 1h.
When the P2 is stored, the CSP is formed by the inner walls 1k of the cross-shaped, T-shaped, and L-shaped front side guides 1h.
The four corners of the 2 square main body 2a (here, the tape substrate 2d) are positioned, and thereby the CS
P2 is positioned.

On the other hand, the pocket 1a on the back surface 1f side is
As shown in the figure, the area is composed of a total of six back-side guides 1i, one set and two sets provided at two opposing sides of a square, respectively. When stored, each inner wall 1 of one set and two sets of back-side guides 1i arranged opposite to each other
The four sides of the rectangular main body portion 2a (the tape substrate 2d) of the CSP 2 are positioned by k.
P2 is positioned.

As shown in FIG. 1 (a), near the center of the front surface 1e side of the tray 1, as shown in FIG.
h to form a closed area connected to the suction rib 1j
Are formed.

This is because when the tray 1 in the stacked state is separated from the uppermost tray 1 by forming a region closed by the cross-shaped front side guide 1h and the suction rib 1j, This is for preventing vacuum leakage when vacuum-sucking the closed area.

However, the handling of the tray 1 is not limited to vacuum suction, and therefore, the suction rib 1j is not necessarily provided.

Here, the structure of the CSP 2 housed in the tray 1 shown in FIG. 7 will be described. The semiconductor chip 3 is arranged on a square tape substrate 2d having substantially the same size as the semiconductor chip 3 and the CSP 2 is mounted on the tape substrate 2d. A plurality of ball electrodes 2b are provided in an area array arrangement in an inner region (part) of the external terminal mounting surface 2c on the side opposite to the chip arrangement side. Therefore, the CSP 2 is a Fan-I
n-type.

Since the tape substrate 2d is slightly larger between the semiconductor chip 3 and the tape substrate 2d, the CSP 2
Is a tape substrate 2d.

Next, a method of manufacturing the semiconductor device according to the first embodiment will be described.

In the first embodiment, the method of manufacturing the semiconductor device includes storing and transporting the CSP 2 using the tray 1.
Desired processes such as characteristic selection, inspection (appearance inspection), baking, and shipping will be described.

First, when the CSP 2 is stored in the tray 1, a plurality of pockets 1 arranged in a matrix are required.
a is formed on both sides and a plurality of pockets 1a
FIG. 1 to FIG. 1 which have a buffer body 1g provided on a bottom 1c which is a contact point of the pocket 1a with the CSP 2 and formed of a resin material having a lower hardness than the tray body 1d. A plurality of stacked trays 1 shown in FIG.

Subsequently, the CSP 2 is arranged in the pocket 1a on the front surface 1e side of the tray 1 (first tray), and as shown in FIG. 7, the tape substrate 2d which is the main body 2a of the CSP 2
The vicinity of both ends of the external terminal mounting surface 2c is supported by the protrusion 1b of the buffer 1g.

Thus, the CSP 2 is stored in the pocket 1a.

Further, another tray 1 (second tray) that can be stacked on the tray 1 is stacked.

At this time, the front side guide 1 of the lower tray 1
The back side guide 1i of the upper tray 1 is fitted between the two, and the two are stacked.

Thus, the pocket 1 of the lower tray 1
In FIG. 7A, the CSP 2 can be stored in a state where the buffer portions 1g of the lower tray 1 and the upper tray 1 (other trays 1) are arranged on both front and back sides of the CSP 2.

When the trays 1 are stacked in three or more stages, the CSP 2 is arranged in the pocket 1a on the surface 1e side of the upper tray 1 (second stage) in the same manner, and furthermore, the CSP 2 is further placed thereon. The third tray 1 is stacked.

In this way, as shown in FIG. 8, the trays 1 are stacked in a plurality of levels and a plurality of CSPs 2 are stored. However, since the uppermost tray 1 is used as a lid, the pocket 1a does not accommodate the CSP 2.

In the laminated state shown in FIG.
Ties a plurality of trays 1 in a stacked state,
If the CSP 2 is merely stored, the band 6 need not necessarily be bound.

Next, the transfer of the CSP 2 (semiconductor device) using the tray 1 and the baking process will be described.

For example, when the CSP 2 is transported by using the tray 1 between desired steps in the semiconductor manufacturing process, first, the lowermost tray 1, the second tray 1, the third tray Each surface 1 for tray 1
The CSP 2 is stored in the e-side pocket 1a, and the plurality of trays 1 are stacked in multiple stages. In addition, since the tray 1 at the top is a substitute for the lid, the CSP 2 is not accommodated therein.

Thereafter, the plurality of trays 1 in this stacked state
Are bound by a band 6 as shown in FIG. 8 so that the stacked trays 1 are not easily separated.

Further, the plurality of trays 1 in the stacked state are transported between semiconductor manufacturing processes by an automatic transport vehicle or the like.

When the baking process of the CSP 2 is performed, a plurality of stacked trays 1 containing the CSP 2 are passed through a baking furnace or the like together with the trays.
SP2 is baked for each tray.

At this time, the tray 1 (tray main body 1d and buffer 1g) of the first embodiment is made of a resin material having high heat resistance, for example, a resin material having heat resistance of 150 ° C. which is a baking temperature. Tray 1
It is possible to perform a baking process for each.

The baking process is performed in CSP2
The CSP 2 in the tray 1 in which the CSP 2 is stored is subjected to moisture absorption processing before packing, and the CSP 2 is subjected to moisture absorption processing after shipment (shipping destination) before mounting the CSP 2 on a mounting board or the like.

Next, the C stored in the tray 1 in the stacked state
A method of inspecting the appearance of the ball electrode 2b of SP2 and a method of selecting characteristics of CSP2 will be described.

For example, a multi-stage tray 1 as shown in FIG. 8 in which the CSPs 2 are stored and stacked in the pockets 1a on the front surface 1e (one surface) is prepared.

Subsequently, the tray 1 in the stacked state is turned upside down as it is, and the back surface 1f (the other tray 1 which has been disposed on the upper side before the reversal) of the other tray 1 disposed on the lower side by the reversal. Buffer 1 of pocket 1a on the other side)
The surface 3a of the semiconductor chip 3 of the CSP 2 is supported by the projection 1b of g.

Thereafter, as shown in FIG. 9, the trays 1 disposed on the upper side (the trays 1 disposed on the lower side before the reversal) are sequentially removed by the reversal, and the CSP 2 is mounted on the external terminal mounting surface 2c. To perform an external appearance inspection of the ball electrode 2b, which is an external terminal of the CSP 2, or an electrical characteristic selection inspection of the CSP 2.

That is, the tray 1 can support the CSP 2 with the CSP 2 turned upside down, even if the tray 1 is turned upside down in the stacked state, whereby the jig for supporting the CSP 2 can be used. Used as C
The appearance inspection of the ball electrode 2b provided on the external terminal mounting surface 2c of the main body 2a of the SP2 and the electrical characteristic selection inspection of the CSP2 can be performed.

Next, a method of packing and shipping the CSP 2 (semiconductor device) using the tray 1 will be described.

First, as shown in step S1 of FIG. 10, a plurality of trays 1 are prepared by storing the CSPs 2 in the respective pockets 1a shown in FIG.

That is, the CSPs 2 are stored in the pockets 1a of the respective trays 1 except for the uppermost tray 1 to prepare the trays 1 in a stacked state.

Subsequently, as shown in step S2, the stacked trays 1 are bound by the band 6.

At that time, together with the tray 1, a silica gel 7 as a moisture absorbent and an indicator card 8 for confirming the humidity level are bound by a band 6.

Thereafter, the moisture-proof packaging shown in step S3 is performed.

Here, the laminated tray 1 bound by the band 6 is put in a moisture-proof packaging bag 9 made of a film sheet or the like containing aluminum foil, the moisture-proof packaging bag 9 is closed by heat sealing, and information of the product is described. The bar code label 11 is attached to the front surface 9a of the moisture-proof packaging bag 9.

Thereafter, the interior box packing shown in step S4 is performed.

Here, the moisture-proof packaging bag 9 packed with the stacked trays 1 is put in the interior box (storage box) 4 together with the air cap 12 as a cushioning material, and packed.

Subsequently, the label display shown in step S5 is performed.

That is, the barcode label 11 is attached to the surface 4a of the interior box 4.

After that, the outer box packing shown in step S6 is performed.

Here, for example, a plurality of interior boxes 4 are packed in an exterior box 5 and taped to package the exterior box 5, and a bar code label 11 is attached to the surface 5 a of the exterior box 5.

Thus, the packaging of the tray 1 using the moisture-proof packaging bag 9, the inner box 4, and the outer box 5 is completed, and the outer box 5 is shipped.

In the method for manufacturing a semiconductor device according to the first embodiment, the CS of the pocket 1 a of the tray 1 for storing the CSP 2 is
By providing a buffer 1g made of a material softer than the tray main body 1d at the contact point with P2,
Even when the tray 1 falls and the CSP 2 receives an impact during the transport of the SP 2 or the like, the impact can be reduced by the buffer 1g, and therefore, the impact force applied to the semiconductor chip 3 can be reduced.

As a result, breakage of the semiconductor chip 3 such as a chip crack can be prevented, whereby the protection of the CSP 2 in transporting the CSP 2 using the tray 1 can be improved.

Further, since the shock can be mitigated by the buffer portion 1g, the shock force applied to the CSP 2 at the time of the shock can be reduced.

As a result, the deformation and destruction of the ball electrode 2b of the CSP 2 can be prevented.
The protection of P2 can be improved.

Further, the tray 1 is not made of one kind (same material) of the tray main body 1d and the buffer 1g of the pocket 1a arranged almost uniformly over the entire area of the tray main body 1d.
When the tray 1 is formed, the molding material wraps around the entire tray body 1d when the tray 1 is formed, so that the deformation of the tray 1 such as warpage can be reduced.

Further, the tray body 1
Since d and the buffer portion 1g are formed of a resin material having high heat resistance, deformation such as warpage of the tray 1 can be reduced even in a high-temperature atmosphere, and therefore, the tray 1 can be used for baking. .

According to the first embodiment, the tray 1
At the time of lamination, a void is formed on the surface side of CSP2,
Even if the tray 1 is warped or deformed,
It is possible to prevent partial concentrated load from being applied to the CSP 2.

As a result, the baking process of the CSP 2 can be performed on the tray 1 with the CSP 2 stored in the tray 1.

Further, since deformation such as warpage of the tray 1 at the time of performing the baking process can be reduced, it is effective for reuse of the tray 1.

In the tray 1 according to the first embodiment, the buffer 1g in the pocket 1a has a bottom surface connected to the inner wall 1k which is the side wall of the pocket 1a, and the CSP support portion has the bottom surface of the pocket 1a. However, only the buffer portion 1g made of a soft material is used.

As a result, the CSP support portion of the pocket 1a is not a two-layer structure of a hard material forming the tray body 1d and a soft material forming the buffer portion 1g, but a structure of only a soft material. The tray 1 can be easily manufactured, and the manufacturing cost of the tray 1 can be reduced.

In the tray 1 according to the first embodiment, when the CSPs 2 are stored in the pockets 1a and the trays 1 are stacked, a void is formed on the front side of the CSP 2 (the side opposite to the ball electrode 2b). .

Thus, even if the tray 1 is warped or the like, it is possible to prevent a concentrated load from being applied to the CSP 2 in the pocket 1a.

Further, in the tray 1 according to the first embodiment,
At the time of stacking the trays, only the buffer portions 1g of the upper and lower trays 1 are arranged on both the front and back surfaces of the CSP 2, so that the CSP 2 has the soft buffer portions 1g on the front side due to the warp of the tray 1 and the vibration during tray conveyance. C
The damage to the CSP 2 can be prevented without the SP 2 being damaged.

(Embodiment 2) FIGS. 11 to 17 are enlarged partial cross-sectional views showing a housed state of a semiconductor device when a tray of a modified example is used in the method of manufacturing a semiconductor device of the present invention.

In the second embodiment, the structure and effects of various modifications of the tray 1 used in the method of manufacturing the semiconductor device of the first embodiment will be described.

First, in the tray 1 shown in FIG. 11, the surface corresponding to the surface 1e side of the pocket 1a in the buffer 1g provided at the bottom 1c of the pocket 1a is made a flat surface 11l.
A plurality of projections 1b are dispersedly provided on a surface corresponding to the back surface 1f side.

That is, the surface of the buffer portion 1g on the side supporting the ball electrode 2b of the CSP 2 is a flat surface 11l. Since the surface that the ball electrode 2b of the CSP 2 contacts is the flat surface 11l, The contact between the ball electrode 2b and the buffer portion 1g is independent of the arrangement of the ball electrode 2b. Therefore, the CSP 2 provided with the ball electrode 2b in an area array arrangement over substantially the entire external terminal mounting surface 2c of the CSP 2 is provided. Can be stored, and as a result, the ball electrodes 2b are effective for storing the CSPs 2 in a full matrix arrangement.

The tray 1 shown in FIG. 12 has a buffer portion 1g provided at the bottom 1c of the pocket 1a, and has a ball electrode 2b on both surfaces thereof corresponding to the mounting pitch and arrangement of the ball electrodes 2b of the CSP 2. A plurality of protrusions 1b are dispersed and provided at locations where they do not contact.

That is, CS is applied to both surfaces of the buffer 1g.
A plurality of protrusions 1b are provided at positions not in contact with the ball electrode 2b of P2. Since the ball electrode 2b of the CSP 2 is positioned by the protrusion 1b,
C in the direction parallel to buffer 1g when CSP2 is stored
It is possible to prevent rattling of SP2.

Thus, the destruction of the semiconductor chip 3 of the CSP 2 due to impact can be reduced.

In the tray 1 shown in FIG. 13, a plurality of protrusions 1b are dispersed on a surface of the buffer 1g corresponding to the surface 1e side of the pocket 1a, as opposed to the buffer 1g of the tray 1 shown in FIG. And the opposite side to the flat surface 1
l.

In this case, as in the case of the tray 1 shown in FIG. 12, it is possible to prevent the CSP 2 from rattling in the direction parallel to the buffer 1g when the CSP 2 is stored. The destruction of the semiconductor chip 3 can be reduced.

In the tray 1 shown in FIG. 14, the arrangement of the plurality of projections 1b provided on the buffer 1g is the same as the pocket 1a of the buffer 1g of the tray 1 shown in FIG. In the same manner as the arrangement of the projections 1b corresponding to the front surface 1e side.

That is, when the CSP 2 is accommodated in the pocket 1a, a plurality of protrusions 1b are provided on both the front and back surfaces of the buffer 1g so that the CSP 2 does not reliably come into contact with the ball electrode 2b. Since the projections 1b can be provided irrespective of the arrangement pitch and arrangement of the ball electrodes 2b of the CSP 2, the formation locations of the projections 1b in the buffer 1g can be simplified.

Further, in the tray 1 shown in FIG. 15, the protrusions 1b having the same arrangement as the protrusions 1b shown in FIG.
Are provided only on the side corresponding to the surface 1e side of the pocket 1a, and the opposite surface is a flat surface 11.

With this, the same effect as that of the tray 1 shown in FIG. 14 can be obtained.

Further, in the tray 1 shown in FIG. 16, the front and back surfaces of the buffer 1g are formed on the flat surface 11.
As a result, the ball electrode 2b of the CSP 2 is directly supported by the flat surface 11 of the buffer 1g.
The contact position condition between the ball electrode 2b of P2 and the buffer portion 1g becomes independent of the installation pitch and arrangement of the ball electrode 2b,
Therefore, similarly to the effect obtained by the tray 1 shown in FIG.
The tray 1 is effective for storing the SP2 or the like.

Further, in the tray 1 shown in FIG. 17, the inner wall 1k of the pocket 1a is formed of the same material as the buffer 1g in addition to the buffer 1g at the bottom 1c of the pocket 1a.

Thus, in a semiconductor device such as the CSP 2 in which the semiconductor chip 3 is exposed, even when the side surface of the semiconductor chip 3 or the end of the tape substrate 2d collides with the inner wall 1k, the shock can be reduced. As a result, the impact force applied to the semiconductor chip 3 can be further reduced.

Therefore, in addition to the effect of alleviating the impact force by the buffer 1g of the bottom 1c of the pocket 1a, C
The protection of SP2 can be improved.

Further, the deformation of the tray 1 such as warpage can be reduced.
Alternatively, tray 1 can be used for baking, and
CSP due to voids on the CSP2 surface side when stacking tray 1
Embodiment 1 describes the effect of preventing concentrated load on the second embodiment.
Is the same as

The resin materials forming the tray body 1d and the buffer 1g in the tray 1 shown in FIGS. 11 to 17, the other structures in the tray 1, and the semiconductor device according to the second embodiment. Manufacturing method, that is, CSP2 using tray 1 shown in FIGS.
, Storage, transport, characteristic selection, inspection (appearance inspection), baking process, and shipping method are the same as those described in the first embodiment, and thus redundant description will be omitted.

(Embodiment 3) FIGS. 18A and 18B are diagrams showing a structure on the front side of a tray of a modification used in the method of manufacturing a semiconductor device according to the present invention, wherein FIG. 18A is a plan view, and FIG. FIG. 19C is a side view in the tray width direction, FIG. 19 is a bottom view showing the structure on the back surface side of the tray shown in FIG. 18, and FIG. 20 is storage when the semiconductor device is stored in the tray shown in FIG. FIG. 21 is an enlarged partial cross-sectional view showing a cutting structure in the width direction of the storage unit when the semiconductor device is stored in the tray shown in FIG. 18, and FIG. 22 is a semiconductor of the present invention. FIG. 11 is an enlarged partial cross-sectional view showing a storage state of a semiconductor device in a tray of a modified example used in the device manufacturing method.

In the third embodiment, the semiconductor device accommodated in the tray 1 has a plurality of gull-wing-shaped outer leads (external terminals) 10b as shown in FIG. 20, and the outer leads 10b have a narrow pitch (for example, Pitch 0.4mm
0.5 mm) and a lead thickness of 0.5 mm.
This is a case of the thin outer lead 10b of about 1 mm, and the tray 1 for storing the semiconductor device will be described.

Therefore, in the third embodiment, as an example of the semiconductor device, a TQFP (Thin Q
uad Flat Package) 10, the semiconductor device is an SOP (Small Outline Package) other than TQFP10.
Package).

The tray 1 shown in FIG. 18 and FIG. 19 is of a stacked type capable of storing the TQFP 10 shown in FIG. The tray body 1d connecting the main body 1a and the TQF
A rib-shaped buffer 1g is provided to position P10 and is made of a material softer than the tray body 1d. The buffer 1g has a rib-like shape protruding from the bottom 1c.

That is, as shown in FIGS. 18 (a), (b), (c) and FIG. 19, the rib-shaped buffering portion 1g protruding from the bottom 1c is located at the bottom 1c of the pocket 1a as shown in FIG. Square body part 1 which is a mold part of TQFP10
0a is provided so as to be positioned along four sides of the pocket 1a.
Since the TQFP 10 is positioned in the
It is possible to prevent the outer leads 10b from coming into contact with the inner wall 1k of the pocket 1a due to vibrations and impacts during the transportation of the TQFP 10 using the TQFP.

The tray 1 shown in FIG. 22 has a buffer portion 1g protruding in a rib shape and a buffer portion 1g provided over the entire bottom 1c of the pocket 1a, similarly to the tray 1 described in the first embodiment. As in the case of the tray 1 shown in FIG. 18, the main body 10a of the TQFP 10 is positioned by a buffer portion 1g protruding in a rib shape.

It should be noted that FIG. 18 and FIG.
When the TQFP 10 is stored in the pocket 1a of the tray 1 shown in FIG. 2, the gull-wing outer lead 10 of the TQFP 10 is used as shown in FIGS.
A rib-shaped buffer 1g is arranged inside b, and the main body 10a of the TQFP 10 is positioned and stored in the pocket 1a by the rib-shaped buffer 1g.

By using the tray 1 described in the third embodiment, the rib-shaped buffer 1g can be replaced with the tray main body 1d.
Since it is made of a softer resin material, it can be prevented from being broken by an impact and falling off.

Therefore, even when a thin semiconductor device having a gull-wing-shaped outer lead 10b such as the TQFP 10 and having a lead thickness of about 0.1 mm is housed, the TQFP 10 can be positioned in the pocket 1a. Since it is reliably performed, it is possible to prevent the outer lead 10b from colliding with the inner wall 1k of the pocket 1a,
As a result, the deformation of the outer lead 10b in the TQFP 10 can be prevented.

Further, according to the third embodiment, when the trays 1 are stacked, a void is formed on the surface side of the TQFP 10 (semiconductor device). , TQFP10 (semiconductor device) can be prevented from being partially concentrated.

The respective resin materials forming the tray body 1d and the buffer 1g in the tray 1 shown in FIGS. 18 and 22, other structures in the tray 1, and the semiconductor device in the third embodiment are described. Manufacturing method, that is, TQFP using tray 1 shown in FIGS.
The storage, transport, characteristic selection, inspection (appearance inspection), baking process, and shipping method of the ten are the same as those described in the first embodiment, and thus redundant description will be omitted.

(Embodiment 4) FIG. 23 is an enlarged partial plan view showing an example of the structure of a tray according to Embodiment 4 of the present invention, and FIG. 24 is a diagram showing the structure when the trays shown in FIG.
FIG. 3 is a partial cross-sectional view taken along line EE of FIG.

In the fourth embodiment, the semiconductor device housed in the tray 1 is a wiring board B as shown in FIG.
A GA substrate 13a is provided.
(See FIG. 7), and a plurality of ball electrodes 1 are provided as external terminals as an example of the semiconductor device.
In the case of the BGA 13 provided in the area array arrangement on the external terminal mounting surface 13b of the BGA substrate 13a and provided with a sealing body portion 13d which is a molded portion formed by sealing the semiconductor chip 3 with a resin mold. Will be described.

However, as long as the semiconductor device has the semiconductor chip 3 mounted on a wiring board, the BGA 1
An LGA (Land Grid Array) other than 3 may be used.

Therefore, the tray 1 shown in FIG. 23 used in the method of manufacturing a semiconductor device (semiconductor package) according to the fourth embodiment has a plurality of the semiconductor devices similar to the tray 1 described in the first embodiment. Although it is a laminated plate-shaped one that is arranged and stored in a matrix, FIG.
The structure of a part of the surface side of the tray 1 (the pocket 1a and its surroundings) is shown in an enlarged manner.

First, the characteristic portions of the tray 1 according to the fourth embodiment will be described. The tray 1 is provided with a tray body 1d for connecting a plurality of pockets 1a, and a tray body provided in the pocket 1a. 24. When the tray 1 containing the BGA 13 in the pocket 1a and another tray 1 are stacked, as shown in FIG.
Buffers 1g are arranged on both front and back sides of GA13, and one of them (disposed on the front side of BGA13)
g supports the sealing body 13 d of the BGA 13,
The outer peripheral portion of the external terminal mounting surface 13b of the BGA substrate 13a is supported by the other buffer portion 1g (disposed on the back side of the BGA 13).

In the tray 1 according to the fourth embodiment, the buffer 1g supporting the lower (back) side of the BGA 13 shown in FIG. 24 has L-shaped corners at the four corners of each rectangular pocket 1a as shown in FIG. The L-shaped buffer portion 1
g supports a corner of the outer peripheral portion of the external terminal mounting surface 13b of the BGA substrate 13a of the BGA 13.

That is, when the BGA 13 is stored in the pocket 1a, the L-shaped buffer 1g does not contact the ball electrode 13c attached to the BGA substrate 13a.
The BGA substrate 13a is arranged so as to support a region outside the ball electrode arrangement region on the external terminal mounting surface 13b of the BGA substrate 13a.

Therefore, the buffer portions 1g supporting the lower (back) side of the BGA 13 (the side of the external terminal mounting surface 13b of the BGA board 13a) are not limited to being arranged at the four corners in the pocket 1a. BGA board 13a
If it is arranged so as to support the outer region (outer peripheral portion) of the ball electrode arrangement region on the external terminal mounting surface 13b, it may be provided at other than the four corners in the pocket 1a.

The L-shaped buffer portions 1g provided at the four corners of each pocket 1a may be formed integrally with the tray body 1d and made of the same hard material. The L-shaped buffer 1g is a package support made of the same material as the tray body 1d.

Therefore, the tray 1 of the fourth embodiment
When the BGA 13 is stored and stacked, among the buffer portions 1g disposed on the front and back surfaces of the BGA 13, at least the buffer portion 1g disposed above (front side) the BGA 13 is B
It is sufficient that the buffering portion 1g supporting the lower portion (back side) of the BGA substrate 13a is made of a softer material softer than the tray main portion 1d. And may be formed of the same hard material as the tray body 1d.

However, it is preferable that all the buffer portions 1g are formed of a soft material which is softer than the tray main body 1d.

Therefore, in the tray 1 of the fourth embodiment, the buffer portions 1g arranged on both front and back sides of the BGA 13 at the time of lamination are different from the buffer body 1g on both front and back sides of the tray body 1d.
When formed of a softer and softer material, at least one of the front and back buffer portions 1g of the BGA 13 is
What is necessary is just to have the structure which contacts and supports BGA13.

Next, the detailed structure of the tray 1 will be described. In the tray main body 1d, a pocket 1a, which is a storage portion surrounded by a partition wall 1s as a side wall and a bottom plate 1t and formed in a concave shape, is formed in a square (quadrangle), and is stretched on an outer edge of the tray main body 1d. A leg 1w as shown in FIG. 24 is erected below the side edge 1u.

Further, an appropriate number of coupling holes 1r shown in FIG. 23 are provided in the bottom plate 1t of the pocket 1a, and rib-shaped buffer portions 1g are provided on the upper and lower surfaces of the bottom plate 1t of the pocket 1a of the tray body 1d. Have been.

The tray body 1d is formed mainly of a synthetic resin having thermoplasticity such as polystyrene, polyethylene, polypropylene, and vinyl chloride resin. It is recommended that the tray body 1d have conductivity or elasticity to prevent electrification by using a conductive material such as a rubber having elasticity such as polybutadiene. You.

[0149] The addition amount of these compositions is, for example,
It is adjusted by the ratio of polystyrene 70%, carbon 10%, and polybutadiene 20%. It is convenient to mold by injection molding as a molding method, but it is needless to say that the method is not limited to this.

The pocket 1a, which is a storage section, has a BG
A13 is a place where a semiconductor device such as A13 is stored.
It is formed in a concave shape by t and the partition wall 1s erected therefrom. At this time, the horizontal area and height of the pocket 1a are formed to have an appropriate size depending on the size of the BGA 13 to be stored, or at least a plane where the BGA 13 does not contact the partition wall 1s and does not protrude from the partition wall 1s. Need to be at height.

It is recommended that the partition wall 1s be formed in accordance with the external shape of the BGA 13.

Further, a notch 1v is formed in the partition wall 1s between the adjacent pockets 1a. The notch 1v is defined by the partition wall 1 so as to be substantially parallel to the bottom plate 1t.
s is cut out, and the annular buffer portion 1 is formed.
It is a place where a connecting portion 1g for connecting g is installed. In addition,
When the connecting portion 1g is not provided, the cutout portion 1v may not be provided in the partition wall 1s.

The coupling hole 1r is a hole for simultaneously forming the rib 1m and the holding portion 1n or pressing the holding portion 1n when forming the annular buffer portion 1g in the pocket 1a. An appropriate number of them are provided at equal intervals in the place where the annular buffer portion 1g of 1a is installed. In particular, it is desirable to provide at four or more places including the intersection of the rib 1m and the connection part 1g.

The annular buffer 1g is provided with a pocket 1a.
A rib 1m protruding from the bottom plate 1t, a holding portion 1n for pressing the BGA 13 from above when the tray 1 is stacked,
It is composed of a connecting part 1p for connecting the rib 1m and the holding part 1n, and a connecting part 1g for connecting the adjacent rib 1m.

Therefore, the rib 1m is formed in an annular shape on the bottom surface of the pocket 1a, and is connected to the adjacent rib 1m and the connecting portion 1m.
g. Holder 1n is pocket 1a
Is formed in an annular shape on the lower surface (back surface side) of the bottom plate 1t.
The rib 1m and the holding portion 1n are connected by a connecting portion 1p via a suitable number of connecting holes 1r provided in the bottom plate 1t.

The installation width and height of the rib 1m are not particularly limited, but are adapted to the size of the BGA 13 to be stored, and when the BGA 13 is stored in the pocket 1a,
It is necessary to set the height to such a level as not to contact the ball electrode 13c of A13.

[0157] On the other hand, the installation width and height of the holding portion 1n are not particularly limited, but are adapted to the size of the BGA 13 to be stored, and the sealing body of the BGA 13 stored in the lower tray 1 when the trays 1 are stacked. Contacts the part 13d,
It is desirable to make the height high enough not to apply a large pressure.

The L-shaped and annular buffer portions 1g have the flexibility to absorb the impact on the tray 1 so as not to be transmitted to the BGA 13, and have the heat resistance so as not to be deformed when the tray 1 is washed with heat. For example, a material having a heat distortion temperature of 150 ° C. or higher is recommended, and for example, a polyester elastomer, a silicone resin, a polyurethane, or the like is used.

The annular buffer portion 1g is formed by mounting a mold for forming the buffer portion 1g on the upper and lower surfaces of the tray 1 and injecting a resin as appropriate by an injection molding method or the like. The injected resin has a rib 1m and a connecting portion 1g.
Is formed, and is injected into the coupling hole 1r and further flows out from the coupling hole 1r to form the holding portion 1n and the coupling portion 1p, whereby the buffer portion 1g is integrally formed.

However, the method of forming the buffer 1g is not limited to this, but the buffer 1g composed of the rib 1m, the holding portion 1n and the connecting portion 1p is formed separately from the tray 1, and the buffer 1g is formed. 1 g may be inserted into the binding hole 1 r,
Instead of forming the coupling hole 1r and the coupling portion 1p, a mold may be attached to each of the upper surface and the lower surface of the tray body 1d, and the rib 1m and the holding portion 1n may be separately injection-molded.

Therefore, the L-shaped buffer 1g is similarly formed by injection molding independently of the tray main body 1d.

The rib 1m and the holding portion 1n do not necessarily have to be formed in a ring shape, but may be formed in a dot or linear projection having an appropriate width, or may be formed on the bottom plate 1t of the pocket 1a. May be formed in a planar shape on the whole or on a part of the four corners.

Therefore, in the case of forming a dot shape, the connecting portion 1
It is not necessary to form g, and when it is formed in the shape of a point, a line, or a plane, the coupling hole 1r and the coupling portion 1p need not be formed.

The rib 1m and the holding portion 1n may be formed by bonding a silicone resin, a polyurethane, a vinyl chloride resin, or the like, or a foamed plastic, a sponge, or the like, which has been previously formed into an annular shape or another shape. The same applies to the L-shaped buffer portions 1g at the four corners in the pocket 1a).

The annular buffer portion 1g is formed such that the coupling hole 1r is formed on the bottom plate 1t of the pocket 1a as a whole or in an appropriate shape, and the cross section of the coupling hole 1r is formed in the same shape as the coupling hole 1r. 1m and the holding portion 1n may be formed so as to protrude from the upper surface and the lower surface of the bottom plate 1t, and may be inserted and fitted into the coupling hole 1r. In this case, the rib 1m and the holding portion 1n protruding from the bottom plate 1t of the buffering portion 1g are formed in a dot, line, or sheet shape to form the rib 1m and the holding portion 1n.

The side edge 1u of the tray body 1d is stretched to an appropriate width on the four outer edges of the tray body 1d, and the leg 1w is erected downward from the side edge 1u. Leg 1w
Is placed on the side edge 1u of the lower tray 1 when the trays 1 are stacked. The leg 1w is adapted to the size of the BGA 13 to be housed and the ribs 1m and the holding portion 1n,
To an appropriate height so that unnecessary pressure is not applied.
The leg 1w may be directly erected from the bottom plate 1t without providing the side edge 1u, and the leg 1w may not be particularly provided.

Next, the procedure for using the tray 1 according to the fourth embodiment will be described. First, the BGA 13 is placed in the pocket 1a of the tray 1 and the BGA 13 is provided by the L-shaped buffer portions 1g provided at the four corners. To support.

As a result, the BGA 13 is
The external terminal mounting surface 13b of the BGA substrate 13a
Is supported by L-shaped buffer portions 1g provided at the four corners.

The tray 1 containing the BGA 13 is placed on the side edge 1u of the lower tray 1 in the upper tray 1
Are placed and stacked. At this time, the holding unit 1n installed on the upper tray 1 holds the sealing body 13d of the BGA 13 stored in the lower tray 1 from above, and the BGA 13 is held by the buffer unit 1g from above and below. .

That is, in the BGA 13, the sealing body 13d is supported by the holding portion 1n of the upper tray 1 from above, while the BGA substrate 13a is supported by the L-shaped buffer 1g of the lower tray 1 from below. Is done.

Then, the trays 1 stacked in this way are packed in a box or the like and transported.

In order to examine the effect on BGA13,
Using a tray 1 made of a vinyl chloride resin with a buffer portion 1 g made of polyester elastomer and a non-installed one, the trays 1 containing the BGA 13 are stacked in five layers and packed. When a drop experiment on a concrete floor was performed, the BGA 13 stored in the tray 1 without the buffer 1g was damaged by dropping from a height of 10 cm, but was stored in the tray 1 with the buffer 1g. The BGA 13 did not break even when dropped from a height of 60 cm.

As described above, in the fourth embodiment, the holding portion 1n constituting the buffer portion 1g is provided on the lower surface of the bottom plate 1t of each pocket 1a of the tray 1, so that the tray 1 having a small friction coefficient is provided. Compared to the case where the BGA 13 is stored in the pocket 1a, the BGA 13 is less likely to slip due to friction with the holding portion 1n, and the lateral movement (side slip) of the BGA 13 in the pocket 1a can be prevented.

As a result, damage due to contact with the partition wall 1s, which is the side wall, is eliminated, and the shock from the lower part of the tray 1 is absorbed by the buffer portion 1g and is not transmitted to the BGA 13, so that damage to the BGA 13 can be prevented. it can.

Further, in the tray 1 according to the fourth embodiment,
Buffers 1g are provided on both sides of the upper and lower surfaces of the bottom plate 1t of each pocket 1a.
Since the A13 can be held from above and below with an appropriate pressure, the BGA 13 does not move in the pocket 1a at all, and the shock to the tray 1 is absorbed by the buffer 1g and is not transmitted to the BGA 13, so that the BGA 13 is more reliably. Can be prevented from being damaged.

The rib 1m on the upper surface of the bottom plate 1t of the pocket 1a and the holding portion 1n on the lower surface are connected to the bottom plate 1t of the pocket 1a.
Since they were integrally formed by coupling with the coupling hole 1r provided at t,
In addition to simplifying the molding process of the buffer 1g, the buffer 1g can be formed thicker, so that the impact on the tray 1 can be further absorbed and not transmitted to the BGA 13, thereby further damaging the BGA 13. Can be prevented.

Furthermore, each concave pocket 1a of the tray 1
L-shaped buffer portions 1g are provided at the four corners of the upper surface of the bottom plate 1t,
And a holding portion 1n that forms a buffer portion 1g on the lower surface of the bottom plate 1t.
When the trays 1 are vertically stacked with the BGA 13 placed in the pocket 1a and the BGA 13 supported by the L-shaped buffer 1g, the bottom plate 1 of the pocket 1a is provided.
L-shaped buffer part 1g installed on the upper surface of
The BGA 13 can be held from above and below by the holding portion 1n which is a buffering portion 1g provided on the lower surface of the bottom plate 1t of the pocket 1a of the GA1 storage tray 1.

Therefore, even when the tray 1 containing the BGA 13 is carried (conveyed), the BGA 13 does not move in the pocket 1a, and the vibration during the carrying is difficult to be transmitted to the BGA 13, thereby preventing the BGA 13 from being damaged. Can be.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the present invention. However, the present invention is not limited to the above embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the first embodiment, the case where the semiconductor device (semiconductor package) is the CSP 2 has been described. However, in the semiconductor device, the ball electrode 2b as an external terminal is provided on the external terminal mounting surface 2c of the main body 2a. As long as it is provided, it is not limited to CSP2, but may be WPP, BGA, or a flip chip product having Au wire bumps.

In the first to third embodiments, the material forming each of the tray body 1d and the buffer 1g of the tray 1 is polyphenylene ether (PPE). , Buffer 1g
Has been described in the case of a polyester-based elastomer or the like, but the material forming the tray body 1d and the buffer 1g may be PPE or PPE, respectively, provided that the buffer 1g is formed of a softer molding material than the tray body 1d. A molding material other than the polyester-based elastomer may be used.

Further, in the drawings showing the stacked state of the trays 1 shown in the first to fourth embodiments, the case where the stacked state of the trays 1 is two is illustrated, but the number of stacked trays 1 is particularly limited. It is not a thing and may be any number of stages.

[0183]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). A buffer portion made of a material softer than the tray body is provided at a location where the semiconductor device storage tray used in the semiconductor device manufacturing method is in contact with the semiconductor device in the storage portion of the semiconductor device storage tray. Even when the device receives a shock, the shock can be reduced by the buffer portion, and as a result, the semiconductor chip can be prevented from being broken. This can improve the protection of the semiconductor device when the semiconductor device is transported using the tray.

(2). In the tray used in the method for manufacturing a semiconductor device, the shock can be reduced by the buffer portion, so that deformation and destruction of the external terminal of the semiconductor device can be prevented, and as a result, the transfer of the semiconductor device using the tray In such a case, the protection of the semiconductor device can be improved.

(3). The tray is made of a different material for the tray main body and the buffer section in the storage section arranged almost evenly over the entire area thereof,
Since the molding material wraps around the entire tray body at the time of tray formation, deformation such as warpage of the tray can be reduced.

(4). Since the tray main body and the buffer are formed of a resin material having high heat resistance, the above (3) can reduce deformation such as warpage of the tray even in a high-temperature atmosphere, and therefore, the tray is used for baking. It becomes possible. As a result, the semiconductor device can be baked together with the tray while the semiconductor device is stored in the tray.

(5). Since the deformation such as the warpage of the tray when the semiconductor device is baked can be reduced, it is effective for the reuse of the tray.

[Brief description of the drawings]

FIGS. 1A, 1B, and 1C are diagrams illustrating an example of a structure on a front surface side of a tray used in a method for manufacturing a semiconductor device according to a first embodiment of the present invention; FIG. FIG. 4B is a plan view, FIG. 4B is a side view in a tray longitudinal direction, and FIG. 4C is a side view in a tray width direction.

FIGS. 2A, 2B, and 2C are enlarged views showing a detailed structure of a portion A shown in FIG. 1A, FIG.
(B) is a sectional view showing a BB section of (a), and (c) is a sectional view showing a CC section of (a).

FIG. 3 is a bottom view showing the structure on the back side of the tray shown in FIG. 1;

FIG. 4 is an enlarged partial plan view showing a detailed structure of a portion D shown in FIG. 3;

FIG. 5 is a characteristic data diagram showing an example of characteristics of a material used for forming a tray body in the tray shown in FIG. 1;

FIG. 6 is a characteristic data diagram showing an example of characteristics of a material used for forming a buffer portion in the tray shown in FIG.

7 is an enlarged partial cross-sectional view showing an example of a storage state of a semiconductor device using the tray shown in FIG.

8 is a perspective view showing an example of a state of the tray at the time of inter-process transfer in a method of manufacturing a semiconductor device using the tray shown in FIG. 1;

9 is an enlarged partial cross-sectional view showing an example of the state of the tray when inspecting the back surface of the semiconductor device in the method of manufacturing the semiconductor device using the tray shown in FIG.

10 is a packing process flow chart showing an example of a method of packing a semiconductor device in a method of manufacturing a semiconductor device using the tray shown in FIG. 1, and a perspective view corresponding to a packing procedure.

FIG. 11 is an enlarged partial cross-sectional view showing a housed state of a semiconductor device when a tray of a modification is used in the method of manufacturing a semiconductor device of the present invention.

FIG. 12 is an enlarged partial cross-sectional view showing a housed state of a semiconductor device when a tray of a modification is used in the method of manufacturing a semiconductor device of the present invention.

FIG. 13 is an enlarged partial cross-sectional view showing a housed state of a semiconductor device when a tray of a modification is used in the method of manufacturing a semiconductor device of the present invention.

FIG. 14 is an enlarged partial cross-sectional view showing a housed state of a semiconductor device when a tray of a modification is used in the method of manufacturing a semiconductor device of the present invention.

FIG. 15 is an enlarged partial cross-sectional view showing a housed state of a semiconductor device when a tray of a modification is used in the method of manufacturing a semiconductor device of the present invention.

FIG. 16 is an enlarged partial cross-sectional view showing a housed state of a semiconductor device when a tray of a modification is used in the method of manufacturing a semiconductor device of the present invention.

FIG. 17 is an enlarged partial cross-sectional view showing a storage state of a semiconductor device in a tray of a modification used in the method of manufacturing a semiconductor device according to the present invention.

18 (a), (b), and (c) are views showing the structure on the front side of a tray of a modification used in the method of manufacturing a semiconductor device of the present invention, (a) is a plan view, (b) is a side view in the tray longitudinal direction, and (c) is a side view in the tray width direction.

FIG. 19 is a bottom view showing the structure on the back side of the tray shown in FIG. 18;

20 is an enlarged partial cross-sectional view showing a longitudinally cut structure of a storage portion of the tray shown in FIG. 18 when a semiconductor device is stored.

21 is an enlarged partial cross-sectional view illustrating a cutting structure in a width direction of a storage unit when storing a semiconductor device in the tray illustrated in FIG. 18;

FIG. 22 is an enlarged partial cross-sectional view showing a storage state of a semiconductor device in a tray according to a modification used in the method of manufacturing a semiconductor device of the present invention.

FIG. 23 is an enlarged partial plan view illustrating an example of the structure of a tray according to Embodiment 4 of the present invention.

24 is a partial cross-sectional view showing a structure when the trays shown in FIG. 23 are stacked, cut along the line EE in FIG. 23;

[Explanation of symbols]

 Reference Signs List 1 tray 1a pocket (storage portion) 1b protrusion 1c bottom (contact portion) 1d tray main body 1e surface (one surface) 1f back surface (the other surface) 1g buffer portion (contact portion) 1h front surface guide 1i back surface guide 1j Suction rib 1k Inner wall (contact point) 1l Flat surface 1m Rib 1n Holder 1p Joiner 1q Connecter 1r Joiner hole 1s Partition wall (sidewall) 1t Bottom plate 1u Side edge 1v Notch 1w Leg 2CSP (semiconductor device) 2a Main body 2b Ball electrode (external terminal) 2c External terminal mounting surface (mounting surface) 2d Tape substrate 3 Semiconductor chip 3a Surface 4 Inner box (storage box) 4a Surface 5 Outer box (storage box) 5a Surface 6 Band Reference Signs List 7 silica gel 8 indicator card 9 moisture-proof packaging bag 9a surface 10 TQFP (semiconductor device) 10a main body 10b outer Over de (external terminals) 11 a bar code label 12 air cap 13 BGA (semiconductor device) 13a BGA substrate (wiring substrate) 13b external terminal mounting surface 13c ball electrodes (external terminals) 13d seal main body portion

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 23/12 501 B65D 21/02 A (72) Inventor Enomoto Usuke 5-chome, Josuihoncho, Kodaira-shi, Tokyo No. 20-1 Hitachi, Ltd. Semiconductor Group (72) Inventor Hiromichi Suzuki 5-2-1 Kamizuhonmachi, Kodaira-shi, Tokyo Within Hitachi Semiconductor Group, (72) Inventor Hitoshi Kazama Hiki, Saitama 42, Hinohara, Tamagawa-gun, Gunma Toyo Jushi Co., Ltd.

Claims (29)

[Claims] 1. Manufacturing of a semiconductor device in which a semiconductor device is stored in the storage portion of a stacked tray having a plurality of storage portions on both front and back sides and a desired process such as storage, transportation, or inspection of the semiconductor device is performed. A method, comprising: a tray body that connects a plurality of storage units; and a buffer unit that is provided at a location where the storage unit contacts the semiconductor device and that is formed of a softer material than the tray body. Preparing the tray, placing the semiconductor device in the storage section of the tray and supporting the semiconductor device by the buffer section, and stacking the tray and another tray that can be stacked thereon And disposing the buffer portion of the tray and the other tray on both front and back sides of the semiconductor device in the storage portion of the tray to store the semiconductor device. A method for manufacturing a semiconductor device, comprising: 2. A semiconductor for storing, transporting, selecting characteristics, inspecting, baking or shipping a semiconductor device in the storage portion of a stacked tray having a plurality of storage portions on both front and back sides. A method of manufacturing a device, comprising: a tray body connecting a plurality of storage sections; and a bottom provided at a contact portion of the storage section with the semiconductor device, and formed of a material softer than the tray body. A step of preparing a plurality of the trays having a buffer section; and a step of disposing the semiconductor device in the storage section of the tray and supporting a mounting-side surface of a main body of the semiconductor device by the buffer section. The tray and another tray that can be stacked thereon are stacked, and the buffer portion of the tray and the other tray is provided on both front and back sides of the semiconductor device in the storage portion of the tray. Arranging the semiconductor device and housing the semiconductor device. 3. A semiconductor for storing, transporting, sorting, inspecting, baking, or shipping a semiconductor device by storing the semiconductor device in the storage portion of a stacked tray having a plurality of storage portions on both sides. A method of manufacturing an apparatus, comprising: a tray body connecting a plurality of storage sections; and a bottom section and an inner wall of the storage section that are in contact with the semiconductor device and formed of a material softer than the tray body section. Preparing a plurality of trays having a buffer portion, and arranging the semiconductor device in the storage portion of the tray, and using the buffer portion to mount a surface on the mounting side of the main body of the semiconductor device or an external terminal. A step of supporting, stacking the tray and another tray that can be stacked thereon, and forming the tray and the front side on both sides of the semiconductor device in the storage portion of the tray; Placing the buffer portion of the other tray to accommodate the semiconductor device. 4. A semiconductor for storing, transporting, selecting characteristics, inspecting, baking or shipping a semiconductor device in the storage portion of a stacked type tray having a plurality of storage portions on both front and back sides. A method of manufacturing an apparatus, comprising: a tray body that connects a plurality of storage sections; and a resin material that is provided at a location where the storage section contacts the semiconductor device and that is lower in hardness than the tray body. A step of preparing a plurality of trays having a buffer; a step of arranging the semiconductor device in the storage section of the tray and supporting the semiconductor device by the buffer; and a step of stacking the tray and the tray. Stacking another tray, and arranging the buffer portion of the tray and the other tray on both front and back sides of the semiconductor device in the storage portion of the tray; And a step of housing the semiconductor device. 5. The method for manufacturing a semiconductor device according to claim 1, wherein said tray main body and said buffer use said tray formed of a resin material which is easy to perform transfer molding. A method for manufacturing a semiconductor device, comprising: 6. The method of manufacturing a semiconductor device according to claim 1, wherein said tray main body and said buffering part use said tray formed of a resin material having high heat resistance. A method for manufacturing a semiconductor device, comprising: 7. The method for manufacturing a semiconductor device according to claim 1, wherein a plurality of protrusions are formed on the front and back surfaces of said buffer provided on a bottom of said housing. A method for manufacturing a semiconductor device, comprising using a tray. 8. The method for manufacturing a semiconductor device according to claim 1, wherein said plurality of projections are formed on one of the front and back surfaces of said buffer provided at a bottom of said housing. A method for manufacturing a semiconductor device, comprising using the tray in which a portion is formed and the other surface is formed as a flat surface. 9. The method of manufacturing a semiconductor device according to claim 7, wherein the protrusions of the buffer are dispersedly arranged on one or both of the front and back surfaces of the buffer. A method for manufacturing a semiconductor device, comprising using the tray. 10. The method of manufacturing a semiconductor device according to claim 7, wherein the protrusion of the buffer is provided on one or both of the front and back surfaces of the buffer. A method for manufacturing a semiconductor device, comprising using the tray arranged at a position not in contact with the semiconductor device. 11. The method of manufacturing a semiconductor device according to claim 7, 8, 9 or 10, wherein the protrusion of the buffer has a shape in which a horizontal cross-sectional area gradually decreases toward a tip of the protrusion. A method for manufacturing a semiconductor device, comprising using the tray formed in the above. 12. The method for manufacturing a semiconductor device according to claim 1, wherein said tray is used in which said buffer portion has a flat front and back surface. Production method. 13. The method of manufacturing a semiconductor device according to claim 1, wherein the inner wall of the storage section uses the tray formed of the same material as the material of the buffer section. A method for manufacturing a semiconductor device, comprising: 14. A semiconductor device provided with a ball electrode as an external terminal is stored in the storage portion of a stacked tray having a plurality of storage portions on both front and back sides, and storage, transportation, and characteristic selection of the semiconductor device are performed. , Inspection, baking process or shipping, a method for manufacturing a semiconductor device, wherein a tray body portion connecting a plurality of the storage portions, and the tray body portion provided at a contact portion of the storage portion with the semiconductor device Preparing a plurality of trays having a buffer portion formed of a softer material; arranging the semiconductor device in the storage portion of the tray and supporting the semiconductor device by the buffer portion; A tray and another tray that can be stacked thereon are stacked, and the tray and the other tray are placed on both front and back sides of the semiconductor device in the storage section of the tray. The method of manufacturing a semiconductor device characterized by having a step of placing the serial buffer unit for accommodating the semiconductor device. 15. The method of manufacturing a semiconductor device according to claim 14, wherein the plurality of ball electrodes house the semiconductor device mounted in an area array over substantially the entire external terminal mounting surface. A method for manufacturing a semiconductor device, comprising using a tray. 16. The method of manufacturing a semiconductor device according to claim 14, wherein the plurality of ball electrodes are provided in a part of an external terminal mounting surface in an area array arrangement. A method for manufacturing a semiconductor device, which is used. 17. The method of manufacturing a semiconductor device according to claim 14, 15, or 16, wherein the protrusion of the buffer provided on the bottom of the housing is one of the front and back surfaces of the buffer. A method of manufacturing a semiconductor device, comprising using the tray disposed on one or both sides of the semiconductor device at a location that does not contact the ball electrode. 18. The method for manufacturing a semiconductor device according to claim 1, wherein a plurality of said trays are stacked in multiple stages, and a plurality of said semiconductor devices are arranged and stored in multiple stages. And transferring the plurality of trays in the stacked state between semiconductor manufacturing steps. 19. The method for manufacturing a semiconductor device according to claim 1, wherein a plurality of said trays are stacked in multiple stages, and a plurality of said semiconductor devices are arranged and stored in multiple stages. A method of manufacturing a semiconductor device, wherein a plurality of the stacked trays are stored in a storage box and shipped. 20. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is housed in the housing portion on one of the front and back surfaces and stacked. The tray is inverted in a stacked state, and the semiconductor device is supported by the buffer portion of the storage portion on the other surface of the tray disposed on the lower side by the inversion, and thereafter, the tray is disposed on the upper side by the inversion. Removing the trays sequentially to expose the semiconductor device and inspecting the external terminals of the semiconductor device for appearance. 21. The method of manufacturing a semiconductor device according to claim 1, wherein a plurality of said trays are stacked in multiple stages, and a plurality of said semiconductor devices are arranged and stored in multiple stages. Baking the semiconductor devices housed in the plurality of trays in the stacked state together with the trays. 22. A semiconductor device having a gull-wing-shaped outer lead provided as an external terminal in the storage portion of a stacked tray having a plurality of storage portions on both front and back sides, and storing, transporting, and storing the semiconductor device. A method of manufacturing a semiconductor device for performing characteristic selection, inspection, baking or shipping, comprising: a tray main body portion that connects a plurality of storage units; and a tray provided to position the semiconductor device in the storage unit. Preparing a plurality of trays each having a buffer portion formed of a material softer than the main body portion; and arranging the buffer portion inside the gull-wing-shaped outer lead of the semiconductor device, and providing the semiconductor device with the buffer portion. Positioning the semiconductor device in the storage portion of the tray by positioning the tray; and the tray and another stackable on the tray. Stacking trays and storing the semiconductor devices in the storage portions of the respective trays. 23. The method of manufacturing a semiconductor device according to claim 22, wherein the plurality of trays are stacked in multiple stages, and the plurality of semiconductor devices are arranged and stored in multiple stages. A method for manufacturing a semiconductor device, comprising transporting a tray between semiconductor manufacturing steps. 24. The method of manufacturing a semiconductor device according to claim 22, wherein a plurality of said trays are stacked in multiple stages, and a plurality of said semiconductor devices are arranged and stored in multiple stages. A method of manufacturing a semiconductor device, wherein a tray is stored in a storage box and shipped. 25. The method of manufacturing a semiconductor device according to claim 22, wherein a plurality of said trays are stacked in multiple stages, and a plurality of said semiconductor devices are arranged and stored in multiple stages. A method of manufacturing a semiconductor device, comprising baking the semiconductor device housed in the tray together with the tray. 26. A semiconductor device which is stored in a storage portion of a tray including a plurality of storage portions and a tray main body portion connecting the plurality of storage portions, and is used for storing, transporting or inspecting the semiconductor device. A method of manufacturing a semiconductor device for performing processing, wherein the plurality of storage units have a side wall and a bottom surface connected thereto, and the bottom surface prepares a plurality of the trays, which are buffer portions formed of a material softer than the tray main body. Stacking a first tray of the plurality of trays and a second tray of the plurality of trays, and placing the first tray on both front and back surfaces of the semiconductor device in the storage section of the first tray. Accommodating the semiconductor device so that the tray and the buffer portion of the second tray are arranged. 27. A tray provided with a plurality of concave storage portions, wherein the tray body portion connects the plurality of storage portions for storing semiconductor devices, and is provided in the storage portion, and is softer than the tray main body portion. A buffer portion formed of a material, wherein when the semiconductor device is stored in the storage portion of the tray and the tray and another tray that can be stacked thereon are stacked, A tray, wherein the buffer portions are arranged on both sides, and at least one of the buffer portions on both front and back sides is in contact with the semiconductor device. 28. The tray according to claim 27, wherein the semiconductor device has a sealing body on which a semiconductor chip is mounted on a wiring board and seals the semiconductor chip. External terminals are provided in an area array arrangement, and when the tray containing the semiconductor device stored in the storage portion and the other tray are stacked, the semiconductor device is disposed on both front and back sides of the semiconductor device. A tray, wherein at least one of the buffer portions is in contact with the sealing body of the semiconductor device. 29. The tray according to claim 27, wherein the semiconductor device includes a semiconductor chip mounted on a wiring board and a sealing body for sealing the semiconductor chip. External terminals are provided in an area array arrangement, and when the tray containing the semiconductor device stored in the storage portion and the other tray are stacked, the semiconductor device is disposed on both front and back sides of the semiconductor device. Among the buffer portions, one of the buffer portions supports the sealing body portion of the semiconductor device, and the other buffer portion supports an outer peripheral portion of an external terminal mounting surface of the wiring board. Tray to do.