JP2001526842A5 - - Google Patents
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- Publication number
- JP2001526842A5 JP2001526842A5 JP1999544437A JP54443799A JP2001526842A5 JP 2001526842 A5 JP2001526842 A5 JP 2001526842A5 JP 1999544437 A JP1999544437 A JP 1999544437A JP 54443799 A JP54443799 A JP 54443799A JP 2001526842 A5 JP2001526842 A5 JP 2001526842A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98200644.7 | 1998-03-02 | ||
| EP98200644 | 1998-03-02 | ||
| PCT/IB1999/000254 WO1999045588A2 (en) | 1998-03-02 | 1999-02-15 | Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001526842A JP2001526842A (ja) | 2001-12-18 |
| JP2001526842A5 true JP2001526842A5 (https=) | 2006-06-22 |
| JP4538107B2 JP4538107B2 (ja) | 2010-09-08 |
Family
ID=8233431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54443799A Expired - Lifetime JP4538107B2 (ja) | 1998-03-02 | 1999-02-15 | 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6177707B1 (https=) |
| EP (1) | EP0985228A1 (https=) |
| JP (1) | JP4538107B2 (https=) |
| WO (1) | WO1999045588A2 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003503854A (ja) * | 1999-06-29 | 2003-01-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス |
| JP2001118927A (ja) * | 1999-10-22 | 2001-04-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| EP1453097A4 (en) | 2001-11-05 | 2008-01-23 | Zycube Co Ltd | TUBE-FREE IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
| EP1453093A4 (en) * | 2001-11-05 | 2007-10-10 | Zycube Co Ltd | SEMICONDUCTOR COMPONENT WITH A LOW-DINE-CIRCULAR MATERIAL FILM AND METHOD FOR THE PRODUCTION THEREOF |
| JP4389626B2 (ja) * | 2004-03-29 | 2009-12-24 | ソニー株式会社 | 固体撮像素子の製造方法 |
| US7714292B2 (en) * | 2006-02-01 | 2010-05-11 | Koninklijke Philips Electronics N.V. | Geiger mode avalanche photodiode |
| US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
| US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
| US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
| US7759166B2 (en) * | 2006-10-17 | 2010-07-20 | Tessera, Inc. | Microelectronic packages fabricated at the wafer level and methods therefor |
| US7952195B2 (en) * | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
| US7679187B2 (en) * | 2007-01-11 | 2010-03-16 | Visera Technologies Company Limited | Bonding pad structure for back illuminated optoelectronic device and fabricating method thereof |
| CN101809739B (zh) | 2007-07-27 | 2014-08-20 | 泰塞拉公司 | 具有后应用的衬垫延长部分的重构晶片堆封装 |
| CN101861646B (zh) | 2007-08-03 | 2015-03-18 | 泰塞拉公司 | 利用再生晶圆的堆叠封装 |
| US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
| JP2008113018A (ja) * | 2007-12-03 | 2008-05-15 | Sony Corp | 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法 |
| KR101655897B1 (ko) * | 2008-06-16 | 2016-09-08 | 테세라, 인코포레이티드 | 마이크로전자 조립체 및 적층형 마이크로전자 조립체의 제조 방법 |
| TWI446498B (zh) * | 2009-03-13 | 2014-07-21 | 泰斯拉公司 | 具有延伸穿越銲墊之通孔的堆疊微電子總成 |
| US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
| US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
| WO2013133827A1 (en) | 2012-03-07 | 2013-09-12 | Intel Corporation | Glass clad microelectronic substrate |
| US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
| US9615453B2 (en) | 2012-09-26 | 2017-04-04 | Ping-Jung Yang | Method for fabricating glass substrate package |
| US10622310B2 (en) | 2012-09-26 | 2020-04-14 | Ping-Jung Yang | Method for fabricating glass substrate package |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
| US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| JP2821830B2 (ja) * | 1992-05-14 | 1998-11-05 | セイコーインスツルメンツ株式会社 | 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法 |
| JP2773660B2 (ja) * | 1994-10-27 | 1998-07-09 | 日本電気株式会社 | 半導体装置 |
| EP0732757A3 (en) * | 1995-03-15 | 1998-03-18 | AT&T Corp. | N-channel field-effect transistor including a thin-film fullerene |
| US6372534B1 (en) * | 1995-06-06 | 2002-04-16 | Lg. Philips Lcd Co., Ltd | Method of making a TFT array with photo-imageable insulating layer over address lines |
| US5821621A (en) * | 1995-10-12 | 1998-10-13 | Texas Instruments Incorporated | Low capacitance interconnect structure for integrated circuits |
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1999
- 1999-02-15 JP JP54443799A patent/JP4538107B2/ja not_active Expired - Lifetime
- 1999-02-15 WO PCT/IB1999/000254 patent/WO1999045588A2/en not_active Ceased
- 1999-02-15 EP EP99901843A patent/EP0985228A1/en not_active Ceased
- 1999-02-26 US US09/258,430 patent/US6177707B1/en not_active Expired - Lifetime