JP2001526842A5 - - Google Patents

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Publication number
JP2001526842A5
JP2001526842A5 JP1999544437A JP54443799A JP2001526842A5 JP 2001526842 A5 JP2001526842 A5 JP 2001526842A5 JP 1999544437 A JP1999544437 A JP 1999544437A JP 54443799 A JP54443799 A JP 54443799A JP 2001526842 A5 JP2001526842 A5 JP 2001526842A5
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JP
Japan
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JP1999544437A
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JP2001526842A (ja
JP4538107B2 (ja
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Priority claimed from PCT/IB1999/000254 external-priority patent/WO1999045588A2/en
Publication of JP2001526842A publication Critical patent/JP2001526842A/ja
Publication of JP2001526842A5 publication Critical patent/JP2001526842A5/ja
Application granted granted Critical
Publication of JP4538107B2 publication Critical patent/JP4538107B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Figure 2001526842
Figure 2001526842
JP54443799A 1998-03-02 1999-02-15 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置 Expired - Lifetime JP4538107B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98200644 1998-03-02
EP98200644.7 1998-03-02
PCT/IB1999/000254 WO1999045588A2 (en) 1998-03-02 1999-02-15 Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive

Publications (3)

Publication Number Publication Date
JP2001526842A JP2001526842A (ja) 2001-12-18
JP2001526842A5 true JP2001526842A5 (ja) 2006-06-22
JP4538107B2 JP4538107B2 (ja) 2010-09-08

Family

ID=8233431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54443799A Expired - Lifetime JP4538107B2 (ja) 1998-03-02 1999-02-15 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置

Country Status (4)

Country Link
US (1) US6177707B1 (ja)
EP (1) EP0985228A1 (ja)
JP (1) JP4538107B2 (ja)
WO (1) WO1999045588A2 (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1118118A1 (en) * 1999-06-29 2001-07-25 Koninklijke Philips Electronics N.V. A semiconductor device
JP2001118927A (ja) * 1999-10-22 2001-04-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7091534B2 (en) 2001-11-05 2006-08-15 Zycube Co., Ltd. Semiconductor device using low dielectric constant material film and method of fabricating the same
US7265402B2 (en) 2001-11-05 2007-09-04 Zycube Co., Ltd. Solid-state image sensor including a microlens
JP4389626B2 (ja) * 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
RU2416840C2 (ru) * 2006-02-01 2011-04-20 Конинклейке Филипс Электроникс, Н.В. Лавинный фотодиод в режиме счетчика гейгера
US8513789B2 (en) * 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7829438B2 (en) * 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US7759166B2 (en) * 2006-10-17 2010-07-20 Tessera, Inc. Microelectronic packages fabricated at the wafer level and methods therefor
US7952195B2 (en) * 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
US7679187B2 (en) * 2007-01-11 2010-03-16 Visera Technologies Company Limited Bonding pad structure for back illuminated optoelectronic device and fabricating method thereof
US8461672B2 (en) * 2007-07-27 2013-06-11 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
WO2009020572A2 (en) 2007-08-03 2009-02-12 Tessera Technologies Hungary Kft. Stack packages using reconstituted wafers
US8043895B2 (en) * 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
JP2008113018A (ja) * 2007-12-03 2008-05-15 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
JP5639052B2 (ja) * 2008-06-16 2014-12-10 テッセラ,インコーポレイテッド ウェハレベルでの縁部の積重ね
WO2010104610A2 (en) * 2009-03-13 2010-09-16 Tessera Technologies Hungary Kft. Stacked microelectronic assemblies having vias extending through bond pads
US8207453B2 (en) * 2009-12-17 2012-06-26 Intel Corporation Glass core substrate for integrated circuit devices and methods of making the same
US9420707B2 (en) * 2009-12-17 2016-08-16 Intel Corporation Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
WO2013133827A1 (en) 2012-03-07 2013-09-12 Intel Corporation Glass clad microelectronic substrate
US9001520B2 (en) 2012-09-24 2015-04-07 Intel Corporation Microelectronic structures having laminated or embedded glass routing structures for high density packaging
US10622310B2 (en) 2012-09-26 2020-04-14 Ping-Jung Yang Method for fabricating glass substrate package
US9615453B2 (en) 2012-09-26 2017-04-04 Ping-Jung Yang Method for fabricating glass substrate package

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
JP2821830B2 (ja) * 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
JP2773660B2 (ja) * 1994-10-27 1998-07-09 日本電気株式会社 半導体装置
EP0732757A3 (en) * 1995-03-15 1998-03-18 AT&T Corp. N-channel field-effect transistor including a thin-film fullerene
US5641974A (en) * 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
US5821621A (en) * 1995-10-12 1998-10-13 Texas Instruments Incorporated Low capacitance interconnect structure for integrated circuits

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