JP2001526459A - 堆積シールドを具備するプラズマ反応炉 - Google Patents

堆積シールドを具備するプラズマ反応炉

Info

Publication number
JP2001526459A
JP2001526459A JP2000524491A JP2000524491A JP2001526459A JP 2001526459 A JP2001526459 A JP 2001526459A JP 2000524491 A JP2000524491 A JP 2000524491A JP 2000524491 A JP2000524491 A JP 2000524491A JP 2001526459 A JP2001526459 A JP 2001526459A
Authority
JP
Japan
Prior art keywords
reactor
shield
electrode
plasma
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000524491A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001526459A5 (https=
Inventor
スティーヴン ピー ディオーネラス
ロバート エイ ディティッツィオ
Original Assignee
ティーガル コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ティーガル コーポレイション filed Critical ティーガル コーポレイション
Publication of JP2001526459A publication Critical patent/JP2001526459A/ja
Publication of JP2001526459A5 publication Critical patent/JP2001526459A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2000524491A 1997-12-05 1998-12-01 堆積シールドを具備するプラズマ反応炉 Pending JP2001526459A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98573097A 1997-12-05 1997-12-05
US08/985,730 1997-12-05
PCT/US1998/025437 WO1999029923A1 (en) 1997-12-05 1998-12-01 Plasma reactor with a deposition shield

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009269589A Division JP2010080972A (ja) 1997-12-05 2009-11-27 堆積シールドを具備するプラズマ反応炉

Publications (2)

Publication Number Publication Date
JP2001526459A true JP2001526459A (ja) 2001-12-18
JP2001526459A5 JP2001526459A5 (https=) 2006-03-23

Family

ID=25531755

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000524491A Pending JP2001526459A (ja) 1997-12-05 1998-12-01 堆積シールドを具備するプラズマ反応炉
JP2009269589A Abandoned JP2010080972A (ja) 1997-12-05 2009-11-27 堆積シールドを具備するプラズマ反応炉

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009269589A Abandoned JP2010080972A (ja) 1997-12-05 2009-11-27 堆積シールドを具備するプラズマ反応炉

Country Status (7)

Country Link
US (4) US6006694A (https=)
EP (1) EP1038046A4 (https=)
JP (2) JP2001526459A (https=)
KR (1) KR20010032824A (https=)
CN (1) CN1122117C (https=)
CA (1) CA2312777A1 (https=)
WO (1) WO1999029923A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP2003051656A (ja) * 2001-08-06 2003-02-21 Ulvac Japan Ltd 巻取り式ドライエッチング方法及び装置
JP2011071527A (ja) * 2004-06-30 2011-04-07 Applied Materials Inc フォトマスクプラズマエッチングの為の方法および装置

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JP2001514444A (ja) 1997-08-26 2001-09-11 アプライド マテリアルズ インコーポレイテッド プラズマ処理チャンバへ安定した電力を送ることができる装置及び方法
US6006694A (en) * 1997-12-05 1999-12-28 Tegal Corporation Plasma reactor with a deposition shield
US6521081B2 (en) * 1997-12-05 2003-02-18 Tegal Corporation Deposition shield for a plasma reactor
US20060137821A1 (en) * 2004-12-28 2006-06-29 Lam Research Coporation Window protector for sputter etching of metal layers
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP4057198B2 (ja) * 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
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US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
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US6666982B2 (en) * 2001-10-22 2003-12-23 Tokyo Electron Limited Protection of dielectric window in inductively coupled plasma generation
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JP4549858B2 (ja) 2002-10-17 2010-09-22 バイオリーダーズ コーポレイション ヒト・パピローマウイルスに対するワクチン用ベクターおよび同ベクターによって形質転換された微生物
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US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP2006019414A (ja) * 2004-06-30 2006-01-19 Canon Inc プラズマ処理装置
CN100389225C (zh) * 2005-10-21 2008-05-21 友达光电股份有限公司 等离子体反应腔
US20080233016A1 (en) * 2007-03-21 2008-09-25 Verity Instruments, Inc. Multichannel array as window protection
JP4971930B2 (ja) * 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
WO2009117612A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Shielded lid heater assembly
US20100047594A1 (en) * 2008-08-20 2010-02-25 Aharon Inspektor Equipment and method for physical vapor deposition
TWI498053B (zh) * 2008-12-23 2015-08-21 Ind Tech Res Inst 電漿激發模組
US8518563B2 (en) * 2010-02-23 2013-08-27 Seagate Technology Llc Covalently bound monolayer for a protective carbon overcoat
US9055653B2 (en) * 2010-04-12 2015-06-09 Sharp Kabushiki Kaisha Deposition apparatus and deposition method
JP5456711B2 (ja) * 2011-03-03 2014-04-02 住友重機械工業株式会社 成膜装置
US20120258607A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
JP2013102075A (ja) * 2011-11-09 2013-05-23 Fujitsu Semiconductor Ltd エッチング装置
RU2516502C1 (ru) * 2012-11-14 2014-05-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет" Вакуумно-дуговой генератор с жалюзийной системой фильтрации плазмы от микрочастиц
JPWO2015108065A1 (ja) * 2014-01-15 2017-03-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
US10304482B2 (en) 2015-03-22 2019-05-28 Seagate Technology Llc Devices including an overcoat layer
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
CN110544615B (zh) * 2019-08-28 2022-08-19 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
DE102021114868A1 (de) * 2021-06-09 2022-12-15 Aixtron Se Gaseinlassorgan für einen CVD-Reaktor
CN115786866A (zh) * 2022-12-22 2023-03-14 深圳奥卓真空设备技术有限公司 一种icp离子源分区氧化镀膜设备

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051656A (ja) * 2001-08-06 2003-02-21 Ulvac Japan Ltd 巻取り式ドライエッチング方法及び装置
JP2011071527A (ja) * 2004-06-30 2011-04-07 Applied Materials Inc フォトマスクプラズマエッチングの為の方法および装置

Also Published As

Publication number Publication date
US6170431B1 (en) 2001-01-09
CN1122117C (zh) 2003-09-24
US6006694A (en) 1999-12-28
EP1038046A4 (en) 2006-08-02
KR20010032824A (ko) 2001-04-25
JP2010080972A (ja) 2010-04-08
EP1038046A1 (en) 2000-09-27
CN1290308A (zh) 2001-04-04
US6173674B1 (en) 2001-01-16
WO1999029923A1 (en) 1999-06-17
US6360686B1 (en) 2002-03-26
CA2312777A1 (en) 1999-06-17

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