JP2001514447A - 選択的プラズマエッチングのための方法 - Google Patents

選択的プラズマエッチングのための方法

Info

Publication number
JP2001514447A
JP2001514447A JP2000508137A JP2000508137A JP2001514447A JP 2001514447 A JP2001514447 A JP 2001514447A JP 2000508137 A JP2000508137 A JP 2000508137A JP 2000508137 A JP2000508137 A JP 2000508137A JP 2001514447 A JP2001514447 A JP 2001514447A
Authority
JP
Japan
Prior art keywords
layer
gas
selectivity
dielectric layer
cubic centimeters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000508137A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001514447A5 (https=
Inventor
ヘレン エイチ チュー，
ジョージ エー ミューラー，
トーマス ディー ニューエン，
ルーミン リー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2001514447A publication Critical patent/JP2001514447A/ja
Publication of JP2001514447A5 publication Critical patent/JP2001514447A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP2000508137A 1997-08-28 1998-08-25 選択的プラズマエッチングのための方法 Pending JP2001514447A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/919,659 1997-08-28
US08/919,659 US6090304A (en) 1997-08-28 1997-08-28 Methods for selective plasma etch
PCT/US1998/017607 WO1999010923A1 (en) 1997-08-28 1998-08-25 Method for selective plasma etch

Publications (2)

Publication Number Publication Date
JP2001514447A true JP2001514447A (ja) 2001-09-11
JP2001514447A5 JP2001514447A5 (https=) 2006-02-09

Family

ID=25442429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000508137A Pending JP2001514447A (ja) 1997-08-28 1998-08-25 選択的プラズマエッチングのための方法

Country Status (6)

Country Link
US (1) US6090304A (https=)
EP (1) EP1012877A1 (https=)
JP (1) JP2001514447A (https=)
KR (1) KR100563969B1 (https=)
TW (1) TW538479B (https=)
WO (1) WO1999010923A1 (https=)

Cited By (2)

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JP2002270586A (ja) * 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
JP2002319551A (ja) * 2001-04-23 2002-10-31 Nec Corp 半導体装置およびその製造方法

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US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6962879B2 (en) * 2001-03-30 2005-11-08 Lam Research Corporation Method of plasma etching silicon nitride
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US6746961B2 (en) 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
TW567554B (en) * 2001-08-08 2003-12-21 Lam Res Corp All dual damascene oxide etch process steps in one confined plasma chamber
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KR20030096832A (ko) * 2002-06-18 2003-12-31 동부전자 주식회사 반도체 소자의 절연막 식각 방법
US7541270B2 (en) * 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US6838012B2 (en) 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US7098141B1 (en) 2003-03-03 2006-08-29 Lam Research Corporation Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures
JP2004296835A (ja) * 2003-03-27 2004-10-21 Applied Materials Inc ダマシン構造を形成する方法
US6949460B2 (en) * 2003-11-12 2005-09-27 Lam Research Corporation Line edge roughness reduction for trench etch
US7521362B2 (en) * 2003-12-23 2009-04-21 Lam Research Corporation Methods for the optimization of ion energy control in a plasma processing system
US7517801B1 (en) 2003-12-23 2009-04-14 Lam Research Corporation Method for selectivity control in a plasma processing system
US20050153563A1 (en) * 2004-01-14 2005-07-14 Lam Research Corporation Selective etch of films with high dielectric constant
US8222155B2 (en) * 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
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US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7226869B2 (en) * 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
JP4979576B2 (ja) * 2005-03-30 2012-07-18 パナソニック株式会社 プラズマドーピング方法及びプラズマ処理装置
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
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US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US8844106B2 (en) 2011-11-10 2014-09-30 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
US8677586B2 (en) 2012-04-04 2014-03-25 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
DE102012106518A1 (de) * 2012-07-18 2014-01-23 H2 Solar Gmbh Beschichtung von Substraten mit Siliciden und deren Oxide
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US9502279B2 (en) 2013-06-28 2016-11-22 Lam Research Corporation Installation fixture having a micro-grooved non-stick surface
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
US9583377B2 (en) 2013-12-17 2017-02-28 Lam Research Corporation Installation fixture for elastomer bands
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
KR102729098B1 (ko) 2016-01-13 2024-11-13 어플라이드 머티어리얼스, 인코포레이티드 에칭 하드웨어를 위한 수소 플라즈마 기반 세정 프로세스
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
EP4140042A4 (en) * 2020-04-23 2024-04-24 Akash Systems, Inc. High-efficiency structures for improved wireless communications

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270586A (ja) * 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
JP2002319551A (ja) * 2001-04-23 2002-10-31 Nec Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR20010023462A (ko) 2001-03-26
WO1999010923A1 (en) 1999-03-04
WO1999010923B1 (en) 1999-05-14
KR100563969B1 (ko) 2006-03-29
TW538479B (en) 2003-06-21
EP1012877A1 (en) 2000-06-28
US6090304A (en) 2000-07-18

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