JP2001503917A5 - - Google Patents

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Publication number
JP2001503917A5
JP2001503917A5 JP1998520881A JP52088198A JP2001503917A5 JP 2001503917 A5 JP2001503917 A5 JP 2001503917A5 JP 1998520881 A JP1998520881 A JP 1998520881A JP 52088198 A JP52088198 A JP 52088198A JP 2001503917 A5 JP2001503917 A5 JP 2001503917A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1998520881A
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English (en)
Japanese (ja)
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JP4427104B2 (ja
JP2001503917A (ja
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Publication date
Priority claimed from AUPO3471A external-priority patent/AUPO347196A0/en
Application filed filed Critical
Publication of JP2001503917A publication Critical patent/JP2001503917A/ja
Publication of JP2001503917A5 publication Critical patent/JP2001503917A5/ja
Application granted granted Critical
Publication of JP4427104B2 publication Critical patent/JP4427104B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP52088198A 1996-11-06 1997-11-06 ガラス基板上への結晶半導体膜形成方法 Expired - Fee Related JP4427104B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU3471 1989-04-04
AUPO3471A AUPO347196A0 (en) 1996-11-06 1996-11-06 Improved method of forming polycrystalline-silicon films on glass
PCT/AU1997/000753 WO1998020524A1 (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate

Publications (3)

Publication Number Publication Date
JP2001503917A JP2001503917A (ja) 2001-03-21
JP2001503917A5 true JP2001503917A5 (https=) 2005-07-14
JP4427104B2 JP4427104B2 (ja) 2010-03-03

Family

ID=3797782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52088198A Expired - Fee Related JP4427104B2 (ja) 1996-11-06 1997-11-06 ガラス基板上への結晶半導体膜形成方法

Country Status (8)

Country Link
US (1) US6624009B1 (https=)
EP (1) EP0946974A4 (https=)
JP (1) JP4427104B2 (https=)
CN (1) CN1115715C (https=)
AU (2) AUPO347196A0 (https=)
ID (1) ID22434A (https=)
MY (1) MY124232A (https=)
WO (1) WO1998020524A1 (https=)

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US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
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US20090107545A1 (en) * 2006-10-09 2009-04-30 Soltaix, Inc. Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8129822B2 (en) * 2006-10-09 2012-03-06 Solexel, Inc. Template for three-dimensional thin-film solar cell manufacturing and methods of use
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8420435B2 (en) * 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US20060176660A1 (en) * 2005-02-07 2006-08-10 Ahmad Amiri Ultra mobile communicating computer
KR101171189B1 (ko) * 2005-10-21 2012-08-06 삼성전자주식회사 더미 글래스 기판과 표시장치의 제조방법
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
JP5101038B2 (ja) 2006-05-19 2012-12-19 株式会社フジクラ 電極基板の製造方法、電極基板の評価方法
CN101496150B (zh) 2006-07-31 2012-07-18 应用材料公司 控制外延层形成期间形态的方法
US7999174B2 (en) * 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US20080264477A1 (en) * 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US8293558B2 (en) * 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US20100304521A1 (en) * 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
US8512581B2 (en) * 2006-10-09 2013-08-20 Solexel, Inc. Methods for liquid transfer coating of three-dimensional substrates
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US7811911B2 (en) * 2006-11-07 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5004160B2 (ja) * 2006-12-12 2012-08-22 株式会社日本製鋼所 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
US20080236665A1 (en) * 2007-04-02 2008-10-02 Jianming Fu Method for Rapid Liquid Phase Deposition of Crystalline Si Thin Films on Large Glass Substrates for Solar Cell Applications
US20100144080A1 (en) * 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
WO2010033638A1 (en) * 2008-09-16 2010-03-25 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Thin group iv semiconductor structures
US8294026B2 (en) 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US8288195B2 (en) * 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
MY160251A (en) * 2008-11-26 2017-02-28 Solexel Inc Truncated pyramid -structures for see-through solar cells
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
JP2012515453A (ja) * 2009-01-15 2012-07-05 ソレクセル、インコーポレイテッド 多孔質シリコン電解エッチングシステム及び方法
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
MY162405A (en) * 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
CN102427971B (zh) * 2009-04-14 2015-01-07 速力斯公司 高效外延化学气相沉积(cvd)反应器
US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
EP2427914A4 (en) 2009-05-05 2013-06-05 Solexel Inc HIGH PRODUCTION PLANT FOR THE PRODUCTION OF POROUS SEMICONDUCTORS
US8445314B2 (en) * 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
EP2436028B1 (en) * 2009-05-29 2016-08-10 Solexel, Inc. See-through three-dimensional thin-film solar cell semiconductor substrate and methods of manufacturing
EP2510550A4 (en) 2009-12-09 2014-12-24 Solexel Inc HIGH-EFFECT PHOTOVOLTAIC SOLAR CELL STRUCTURES WITH REAR-SIDE CONTACTS AND METHODS OF MAKING USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
US8946547B2 (en) 2010-08-05 2015-02-03 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
EP2710639A4 (en) 2011-05-20 2015-11-25 Solexel Inc SELF-ACTIVATED FRONT PANEL PRE-VOLTAGE FOR A SOLAR CELL
JP5983100B2 (ja) * 2011-07-19 2016-08-31 日本電気硝子株式会社 ガラス基材
US8722136B2 (en) * 2011-10-21 2014-05-13 First Solar, Inc. Heat strengthening of a glass superstrate for thin film photovoltaic devices
JP2014006049A (ja) * 2012-06-21 2014-01-16 Sumitomo Bakelite Co Ltd マイクロ流路チップの製造方法
EP3805173B1 (en) * 2018-05-31 2022-06-01 Panasonic Intellectual Property Management Co., Ltd. Glass panel unit manufacturing method
CN112250292B (zh) * 2020-10-13 2022-05-06 浙江旗滨节能玻璃有限公司 功能玻璃的热处理工艺及功能玻璃
CN115632080A (zh) * 2022-09-30 2023-01-20 湖南兆湘光电高端装备研究院有限公司 电池片双玻组件和光伏系统

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JPS63221610A (ja) 1987-03-11 1988-09-14 Hitachi Ltd 薄膜半導体装置の製造方法
JPH02297923A (ja) 1989-05-11 1990-12-10 Seiko Epson Corp 多結晶シリコン再結晶化法
JPH05218367A (ja) 1992-02-03 1993-08-27 Sharp Corp 多結晶シリコン薄膜用基板および多結晶シリコン薄膜の作製方法
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JPH07109573A (ja) 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
JPH1074948A (ja) * 1996-08-30 1998-03-17 Toshiba Corp 液晶表示装置の製造方法

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